CN109301047B - Micro-size imaging LED chip and manufacturing method thereof - Google Patents
Micro-size imaging LED chip and manufacturing method thereof Download PDFInfo
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- 238000005520 cutting process Methods 0.000 claims abstract description 26
- 239000000843 powder Substances 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims description 60
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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Abstract
The invention discloses a micro-size imaging LED chip, which comprises a substrate, an epitaxial layer, cutting channels, a transparent conducting layer, an insulating layer, a reflecting layer, a first electrode, a second electrode, a first bonding pad, a second bonding pad and a fluorescent powder layer, wherein the invention is provided with at least two cutting channels which divide the epitaxial layer into a plurality of independent luminous microstructures from inside to outside, the cutting channels are arranged in a concentric circle, a concentric triangle or a concentric polygon, and the fluorescent powder layer is sequentially arranged on the back surface of the substrate from inside to outside. Correspondingly, the invention also discloses a manufacturing method of the micro-size imaging LED chip. According to the LED chip, the cutting channels are arranged in concentric circles, and different fluorescent powder layers are sequentially arranged on the back surfaces of different luminous microstructure substrates, so that the red, green and blue LED wafers are integrated into a whole, and the light mixing effect is good.
Description
Technical Field
The invention relates to the technical field of light emitting diodes, in particular to a micro-size imaging LED chip and a manufacturing method thereof.
Background
The LED (Light EmittiPg Diode, light-emitting diode) is a semiconductor device which emits light by utilizing the energy released when the carriers are compounded, and the LED chip has the advantages of low power consumption, pure chromaticity, long service life, small volume, quick response time, energy conservation, environmental protection and the like.
The Micro LED has the advantages of high efficiency, high brightness, high reliability, quick response time and the like, has the characteristic of self-luminescence without a backlight source, and has the advantages of energy conservation, simple structure, small volume, thinness and the like. However, micro LEDs also face three problems, namely full color, yield, and emission wavelength uniformity.
The single-color Micro LED array is realized through flip-chip structure encapsulation and drive IC laminating, but RGB array needs to change the crystal grain of pasting red, blue, green three-color for several times, needs to embed hundreds of thousands of LED crystal grains, and is higher to LED crystal grain light efficiency, wavelength uniformity, yield requirement, and the cost expenditure of division bin also prevents it from carrying out mass production simultaneously.
Chinese patent CN103579461B discloses a method for preparing a wafer-level full-color LED display array, in which an epitaxial layer is cut to form a plurality of independent LED structures, and then different phosphors are coated on the back surface of a substrate to align with the LED structures of different columns, thereby forming the wafer-level full-color LED display array. According to the invention, the fluorescent powder is coated on the back surface of the substrate of the front-mounted LED chip, and the light of the chip is emitted from the front surface of the substrate, so that the light emitted from the back surface is less, and the luminous efficiency of the wafer-level full-color LED display array is low. In addition, the LED chips of the invention are arranged in a longitudinal and transverse mode, and the light mixing effect is general. Furthermore, the invention adopts a common anode mode to control the array LEDs, but because the manufacturing process of the array LEDs needs to be completed on a wafer at one time, single RGB imaging units cannot be screened, and thus, bad pixels are easy to exist in imaging.
Disclosure of Invention
The invention aims to solve the technical problem of providing a micro-size imaging LED chip, which integrates red, green and blue LED wafers into a whole, and has the advantages of good light mixing effect, high brightness and small size.
The invention aims to solve the technical problems of providing a micro-size imaging LED chip which has high packaging efficiency and low cost.
The invention aims to solve the technical problems of providing a manufacturing method of a micro-size imaging LED chip, which integrates red, green and blue LED wafers into a whole, and has the advantages of good light mixing effect, high brightness and small size.
In order to solve the above technical problems, the present invention provides a micro-sized imaging LED chip, comprising:
a substrate;
the epitaxial layer is arranged on the surface and comprises a first semiconductor layer, an active layer and a second semiconductor layer in sequence;
the array shape of the cutting channels is concentric circles, concentric triangles or concentric polygons, and the cutting channels divide the epitaxial layer into a plurality of independent luminous microstructures from inside to outside;
the transparent conductive layer, the insulating layer and the reflecting layer are sequentially arranged on the second semiconductor layer;
a first electrode disposed on the first semiconductor layer, a second electrode penetrating the reflective layer and the insulating layer and disposed on the transparent conductive layer;
a first pad disposed on the first electrode, a second pad disposed on the second electrode;
and the fluorescent powder layers are sequentially arranged on the back surface of the substrate from inside to outside.
As a modification of the above, the dicing streets extend to the substrate surface or the first semiconductor layer.
As an improvement of the scheme, the epitaxial layer is divided into a first light-emitting microstructure, a second light-emitting microstructure and a third light-emitting microstructure from inside to outside by the dicing channels, and the fluorescent powder layer comprises a green fluorescent powder layer and a red fluorescent powder layer, wherein the green fluorescent powder layer is arranged on the back surface of the substrate of the second light-emitting microstructure, and the red fluorescent powder layer is arranged on the back surface of the substrate of the third light-emitting microstructure.
As an improvement of the above-described scheme, the light emitting areas of the first light emitting microstructure, the second light emitting microstructure, and the third light emitting microstructure are the same.
As an improvement of the scheme, the first electrodes of the first light-emitting microstructure, the second light-emitting microstructure and the third light-emitting microstructure are of integral structures, and the second electrodes of the first light-emitting microstructure, the second light-emitting microstructure and the third light-emitting microstructure are of independent structures.
Correspondingly, the invention also provides a manufacturing method of the micro-size imaging LED chip, which comprises the following steps:
forming an epitaxial layer on a substrate, wherein the epitaxial layer sequentially comprises a first semiconductor layer, an active layer and a second semiconductor layer;
etching the epitaxial layer to form at least two concentric closed cutting channels, wherein the cutting channels divide the epitaxial layer into a plurality of independent luminous microstructures from inside to outside;
etching the epitaxial layer to form a bare area penetrating through the second semiconductor layer and the active layer and extending to the first semiconductor layer;
forming a transparent conductive layer on the second semiconductor layer;
forming a first electrode on the first semiconductor layer in the exposed area, and forming a second electrode on the transparent conductive layer to obtain a plurality of independent LED wafers;
sequentially depositing an insulating layer and a reflecting layer on the surface of the LED wafer;
etching the reflecting layer and the insulating layer to expose the first electrode and the second electrode;
forming a first bonding pad on the first electrode and forming a second bonding pad on the second electrode;
different LED wafers are aligned, and different fluorescent powder is coated on the back of the substrate from the axis outwards to form red, green and blue LED wafers, so that a micro-size imaging LED chip is formed.
As an improvement of the above scheme, the arrangement shape of the cutting lines is concentric circles, concentric triangles or concentric polygons.
As a modification of the above, the dicing streets extend to the substrate surface or the first semiconductor layer.
As an improvement of the scheme, the epitaxial layer is divided into a first light-emitting microstructure, a second light-emitting microstructure and a third light-emitting microstructure from inside to outside by the cutting channel, wherein green fluorescent powder is coated on the back surface of the substrate of the second light-emitting microstructure, and red fluorescent powder is coated on the back surface of the substrate of the third light-emitting microstructure.
As an improvement of the above-described scheme, the light emitting areas of the first light emitting microstructure, the second light emitting microstructure, and the third light emitting microstructure are the same.
The implementation of the invention has the following beneficial effects:
according to the LED chip, the cutting channels are arranged in concentric circles, and different fluorescent powder layers are sequentially arranged on the back surfaces of different luminous microstructure substrates, so that the red, green and blue LED wafers are integrated into a whole, and the light mixing effect is good; in addition, the LED wafer with the flip-chip structure is used, so that the packaging size can be greatly reduced, the chip transfer times can be reduced, the packaging efficiency can be improved, and the production cost can be reduced.
Further, the light emitting areas of the first light emitting microstructure, the second light emitting microstructure and the third light emitting microstructure are the same, so that the light mixing effect is further improved.
Drawings
FIG. 1 is a cross-sectional view of a micro-sized imaging LED chip of the present invention;
FIG. 2 is a top view of a first embodiment of a micro-scale imaging LED chip of the present invention;
FIG. 3 is a top view of a second embodiment of a micro-scale imaging LED chip of the present invention;
FIG. 4 is a top view of a third embodiment of a micro-scale imaging LED chip of the present invention;
fig. 5 is a flow chart of the fabrication of the micro-sized display LED chip of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings, for the purpose of making the objects, technical solutions and advantages of the present invention more apparent.
Referring to fig. 1 and 2, the present invention provides a micro-sized developing LED chip including a substrate 10, an epitaxial layer 20, a scribe line 24, a transparent conductive layer 30, an insulating layer 40, a reflective layer 50, a first electrode 61, a second electrode 62, a first pad 71, a second pad 72, and a phosphor layer 80.
The substrate 10 of the present invention is preferably a sapphire substrate, and the thickness of the substrate 10 is less than 50 μm in order to improve the light-emitting efficiency of the chip.
The epitaxial layer 20 includes a first semiconductor layer 21 disposed on the substrate 10, an active layer 22 disposed on the first semiconductor layer 21, and a second semiconductor layer 23 disposed on the active layer 22.
The first semiconductor layer 21 of the present invention is an N-type gallium nitride layer, the active layer 22 is a multiple quantum well layer, and the second semiconductor layer 23 is a P-type gallium nitride layer.
Referring to fig. 2 to 4, the present invention is provided with at least two dicing streets 24, the dicing streets 24 divide the epitaxial layer 20 into a plurality of independent light-emitting microstructures from inside to outside, wherein the dicing streets 24 are arranged in a concentric circle, a concentric triangle or a concentric polygon.
Preferably, the present invention is provided with two streets 24, the two streets 24 dividing the epitaxial layer 20 into a first light emitting microstructure, a second light emitting microstructure and a third light emitting microstructure from inside to outside.
More preferably, the light emitting areas of the first light emitting microstructure, the second light emitting microstructure and the third light emitting microstructure are the same.
The dicing streets 24 of the present invention extend to the surface of the substrate 10 or the first semiconductor layer 21. When the dicing streets 24 extend to the surface of the substrate 10, the first semiconductor layer 21 of the first, second, and third light-emitting microstructures is an independent structure; when the dicing streets 24 extend to the first semiconductor layer 21, the first semiconductor layer 21 of the first, second, and third light-emitting microstructures is a unitary structure.
The transparent conductive layer 30 is disposed on the second semiconductor layer 23.
The insulating layer 40 is disposed on the transparent conductive layer 30, and is used for protecting the light emitting structure from chip leakage. Preferably, insulating layer 40 extends onto the sidewalls of epitaxial layer 20 and may also extend onto scribe line 24. Preferably, the insulating layer 40 is made of SiO 2 、Si 3 N 4 、Al 2 O 3 、TiO 2 And Ta 2 O 3 One or more of the above materials.
The reflective layer 50 is disposed on the insulating layer 40, and is used for reflecting the light emitted by the active layer 22 to the back of the substrate 10 for emitting, so as to improve the light emitting efficiency of the chip.
The first electrode 61 is disposed on the first semiconductor layer 21. Preferably, the epitaxial layer 20 further includes an exposed region penetrating the second semiconductor layer 23 and the active layer 22 and extending to the first semiconductor layer 21, wherein the first electrode 61 is disposed on the first semiconductor layer 21 at the exposed region.
The second electrode 62 penetrates the reflective layer 50 and the insulating layer 40 and is disposed on the transparent conductive layer 30.
The first electrode 61 of the first light emitting microstructure, the second light emitting microstructure, and the third light emitting microstructure may be an integral structure or an independent structure. The second electrode 62 of the first, second and third light emitting microstructures may be a unitary structure or may be a separate structure.
Specifically, when the first semiconductor layer 21 of the first light emitting microstructure, the second light emitting microstructure, and the third light emitting microstructure are an integral structure, the second electrodes 62 of the three are independent structures.
When the first electrode 61 of the first light emitting microstructure, the second light emitting microstructure and the third light emitting microstructure are of an integral structure, the second electrodes 62 of the first light emitting microstructure, the second light emitting microstructure and the third light emitting microstructure are of independent structures.
When the first electrode 61 of the first light emitting microstructure, the second light emitting microstructure and the third light emitting microstructure are independent structures, the second electrode 62 of the three is an integral structure.
Preferably, the first electrode 61 and the second electrode 62 are each made of two or more metals of Cr, al, ni, ti, pt and Au.
The first pad 71 is provided on the first electrode 61, and the second pad 72 is provided on the second electrode 62. Preferably, the first pad 71 and the second pad 72 are each made of two or more metals of Au, sn, ni, al, ti, cr.
The phosphor layer 80 of the present invention is disposed on the back surface of the substrate 10 in this order from the inside to the outside. The phosphor layer 80 includes a green phosphor layer and a red phosphor layer. Specifically, the green light fluorescent powder layer is arranged on the back surface of the second light-emitting microstructure substrate, and the red light fluorescent powder layer is arranged on the back surface of the third light-emitting microstructure substrate.
According to the LED chip, the cutting channels are arranged in concentric circles, and different fluorescent powder layers are sequentially arranged on the back surfaces of different luminous microstructure substrates, so that the red, green and blue LED wafers are integrated into a whole, and the light mixing effect is good; in addition, the LED wafer with the flip-chip structure is used, so that the packaging size can be greatly reduced, the chip transfer times can be reduced, the packaging efficiency can be improved, and the production cost can be reduced.
Furthermore, as the first electrode and the second electrode are of independent structures, the LED wafer can be subjected to single screening, so that the yield of the LED chips is improved.
Furthermore, the light emitting areas of the first light emitting microstructure, the second light emitting microstructure and the third light emitting microstructure are the same, so that the light mixing effect is further improved.
Referring to fig. 5, fig. 5 is a flow chart of the manufacturing process of the micro-size imaging LED chip of the present invention, the present invention provides a manufacturing method of the micro-size imaging LED chip, comprising the steps of:
s101, forming an epitaxial layer on a substrate, wherein the epitaxial layer sequentially comprises a first semiconductor layer, an active layer and a second semiconductor layer.
The material of the substrate can be sapphire, silicon carbide or silicon, and can also be other semiconductor materials, and the substrate of the invention is preferably a sapphire substrate.
And growing an epitaxial layer on the substrate by adopting an MOCVD process. The epitaxial layer includes a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer. The first semiconductor layer is an N-type gallium nitride layer, the active layer is a multiple quantum well layer, and the second semiconductor layer is a P-type gallium nitride layer.
S102, etching the epitaxial layer to form at least two concentric closed cutting channels, wherein the cutting channels divide the epitaxial layer into a plurality of independent luminous microstructures from inside to outside.
By using photoresist or SiO 2 And etching the epitaxial layer by using an inductively coupled plasma etching process or a reactive ion etching process as a mask to form at least two concentric closed cutting channels, wherein the cutting channels divide the epitaxial layer into a plurality of independent luminous microstructures from inside to outside.
Preferably, the arrangement shape of the cutting channels is concentric circles, concentric triangles or concentric polygons.
Preferably, the invention is provided with two cutting channels, and the two cutting channels divide the epitaxial layer into a first light-emitting microstructure, a second light-emitting microstructure and a third light-emitting microstructure from inside to outside.
More preferably, the light emitting areas of the first light emitting microstructure, the second light emitting microstructure and the third light emitting microstructure are the same.
The dicing streets of the invention extend to the substrate surface or the first semiconductor layer. When the cutting channel extends to the surface of the substrate, the first semiconductor layers of the first light-emitting microstructure, the second light-emitting microstructure and the third light-emitting microstructure are independent structures; when the dicing streets extend to the first semiconductor layer, the first semiconductor layer of the first light-emitting microstructure, the second light-emitting microstructure and the third light-emitting microstructure is an integral structure.
And S103, etching the epitaxial layer to form an exposed area which penetrates through the second semiconductor layer and the active layer and extends to the first semiconductor layer.
By using photoresist or SiO 2 And etching the epitaxial layer by using an inductively coupled plasma etching process or a reactive ion etching process as a mask to form a bare area penetrating through the second semiconductor layer and the active layer and extending to the first semiconductor layer.
S104, forming a transparent conductive layer on the second semiconductor layer.
By using photoresist or SiO 2 As a mask, a transparent conductive layer is formed on the second semiconductor layer using an electron beam evaporation process.
Wherein the evaporation temperature is 0-300 ℃, the oxygen flow is 5-30sccm, the vacuum degree of the evaporation cavity is 3.0-10.0E-5, and the evaporation time is 100-300min. When the evaporation temperature is lower than 0 ℃, the transparent conductive layer cannot acquire enough energy to migrate, and the formed transparent conductive layer is poor in quality and has many defects; when the evaporation temperature is higher than 300 ℃, the temperature is too high, the film energy is too high, deposition on an epitaxial layer is not easy, the deposition rate is slow, and the efficiency is reduced. When the oxygen flow is less than 5sccm, the oxygen flow is too low, the oxidation of the transparent conductive layer is insufficient, the film quality is poor, and when the oxygen flow is more than 30sccm, the oxygen flow is too high, the transparent conductive layer is excessively oxidized, and the film defect density is increased. When the evaporation time is less than 100min, the film needs higher deposition rate to reach the required thickness, the deposition rate is too fast, atoms cannot migrate, and therefore the film has poor growth quality and many defects. Preferably, the evaporation temperature is 290 ℃, the oxygen flow is 10sccm, and the vacuum degree of the evaporation cavity is 3.0 x 10 -5 -10.0*10 -5 。
The transparent conductive layer is made of indium tin oxide, but is not limited thereto. The ratio of indium to tin in the indium tin oxide is 70-99:1-30. Preferably, the ratio of indium to tin in the indium tin oxide is 95:5. Thus, the conductive capability of the transparent conductive layer is improved, carriers are prevented from being gathered together, and the light emitting efficiency of the chip is improved.
S105, forming a first electrode on the first semiconductor layer of the exposed area, and forming a second electrode on the transparent conductive layer to obtain a plurality of independent LED wafers.
And depositing metal on the first semiconductor layer in the exposed area by adopting an electron beam evaporation, thermal evaporation or magnetron sputtering process to form a first electrode, and depositing metal on the transparent conductive layer to form a second electrode to obtain a plurality of independent LED wafers.
Preferably, the first electrode 61 and the second electrode 62 are each made of two or more metals of Cr, al, ni, ti, pt and Au.
S106, sequentially depositing an insulating layer and a reflecting layer on the surface of the LED wafer.
And depositing an insulating layer on the surface of the LED wafer by adopting a chemical vapor deposition process or a physical vapor deposition process. The insulating layer covers the surface of the transparent conducting layer and the cutting path and is used for protecting the luminous microstructure, so that the electrodes are mutually insulated, and the chip is prevented from being short-circuited. Preferably, the insulating layer is made of SiO 2 、Si 3 N 4 、Al 2 O 3 、TiO 2 And Ta 2 O 3 One or more of the above materials.
And S107, etching the reflecting layer and the insulating layer to expose the first electrode and the second electrode.
And etching holes on the insulating layer and the reflecting layer by adopting an electric induction coupling plasma dry etching process or a wet etching process, and exposing the first electrode and the second electrode.
S108, forming a first bonding pad on the first electrode and forming a second bonding pad on the second electrode.
Preferably, the first pad and the second pad are each made of two or more metals of Au, sn, ni, al, ti, cr.
S109, aligning different LED wafers, and coating different fluorescent powder outwards from the axis on the back of the substrate to form red, green and blue LED wafers, so as to form the micro-size imaging LED chip.
Specifically, a green phosphor is coated on the back surface of the second light-emitting microstructure substrate, and a red phosphor is coated on the back surface of the third light-emitting microstructure substrate to form red, green and blue LED wafers, so that a micro-sized imaging LED chip is formed.
It should be noted that the first electrode of the first light emitting microstructure, the second light emitting microstructure, and the third light emitting microstructure may be an integral structure or an independent structure. The second electrodes of the first light-emitting microstructure, the second light-emitting microstructure and the third light-emitting microstructure can be of an integral structure or an independent structure.
Specifically, when the first semiconductor layer of the first light-emitting microstructure, the second light-emitting microstructure and the third light-emitting microstructure are of an integral structure, the second electrodes of the first light-emitting microstructure, the second light-emitting microstructure and the third light-emitting microstructure are of independent structures.
When the first electrode of the first light-emitting microstructure, the second light-emitting microstructure and the first electrode of the third light-emitting microstructure are of an integral structure, the second electrodes of the first light-emitting microstructure, the second light-emitting microstructure and the third light-emitting microstructure are of independent structures.
When the first electrode of the first light-emitting microstructure, the second light-emitting microstructure and the first electrode of the third light-emitting microstructure are independent structures, the second electrodes of the first light-emitting microstructure, the second light-emitting microstructure and the third light-emitting microstructure are of an integral structure.
According to the LED chip, the cutting channels are arranged in concentric circles, and different fluorescent powder layers are sequentially arranged on the back surfaces of different luminous microstructure substrates, so that the red, green and blue LED wafers are integrated into a whole, and the light mixing effect is good; in addition, the LED wafer with the flip-chip structure is used, so that the packaging size can be greatly reduced, the chip transfer times can be reduced, the packaging efficiency can be improved, and the production cost can be reduced.
Further, the light emitting areas of the first light emitting microstructure, the second light emitting microstructure and the third light emitting microstructure are the same, so that the light mixing effect is further improved.
The above disclosure is only a preferred embodiment of the present invention, and it is needless to say that the scope of the invention is not limited thereto, and therefore, the equivalent changes according to the claims of the present invention still fall within the scope of the present invention.
Claims (3)
1. A micro-sized imaging LED chip, comprising:
a substrate;
the epitaxial layer is arranged on the surface and comprises a first semiconductor layer, an active layer and a second semiconductor layer in sequence;
the array shape of the cutting channels is concentric circles, concentric triangles or concentric polygons, and the cutting channels divide the epitaxial layer into a plurality of independent luminous microstructures from inside to outside;
the transparent conductive layer, the insulating layer and the reflecting layer are sequentially arranged on the second semiconductor layer;
a first electrode disposed on the first semiconductor layer, a second electrode penetrating the reflective layer and the insulating layer and disposed on the transparent conductive layer;
a first pad disposed on the first electrode, a second pad disposed on the second electrode;
the fluorescent powder layer is sequentially arranged on the back surface of the substrate from inside to outside;
the epitaxial layer is divided into a first light-emitting microstructure, a second light-emitting microstructure and a third light-emitting microstructure from inside to outside by the dicing channels, the fluorescent powder layer comprises a green fluorescent powder layer and a red fluorescent powder layer, wherein the green fluorescent powder layer is arranged on the back surface of the substrate of the second light-emitting microstructure, and the red fluorescent powder layer is arranged on the back surface of the substrate of the third light-emitting microstructure;
the light emitting areas of the first light emitting microstructure, the second light emitting microstructure and the third light emitting microstructure are the same;
the micro-size imaging LED chip is manufactured by the following method:
forming an epitaxial layer on a substrate, wherein the epitaxial layer sequentially comprises a first semiconductor layer, an active layer and a second semiconductor layer;
etching the epitaxial layer to form at least two concentric closed cutting channels, wherein the cutting channels divide the epitaxial layer into a plurality of independent luminous microstructures from inside to outside;
etching the epitaxial layer to form a bare area penetrating through the second semiconductor layer and the active layer and extending to the first semiconductor layer;
forming a transparent conductive layer on the second semiconductor layer;
forming a first electrode on the first semiconductor layer in the exposed area, and forming a second electrode on the transparent conductive layer to obtain a plurality of independent LED wafers;
sequentially depositing an insulating layer and a reflecting layer on the surface of the LED wafer;
etching the reflecting layer and the insulating layer to expose the first electrode and the second electrode;
forming a first bonding pad on the first electrode and forming a second bonding pad on the second electrode;
different LED wafers are aligned, and different fluorescent powder is coated on the back of the substrate from the axis outwards to form red, green and blue LED wafers, so that a micro-size imaging LED chip is formed.
2. The micro-scale imaging LED chip of claim 1, wherein said scribe line extends to a substrate surface or first semiconductor layer.
3. The micro-scale imaging LED chip of claim 1, wherein the first electrode of the first light emitting microstructure, the second light emitting microstructure, and the third light emitting microstructure are of unitary construction, and the second electrodes of the three are of independent construction.
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| CN113903839B (en) * | 2019-10-18 | 2023-05-02 | 厦门三安光电有限公司 | Light-emitting diode |
| CN112748109A (en) * | 2019-10-31 | 2021-05-04 | 宁波睿熙科技有限公司 | VCSEL module detection method and system |
| CN111799354A (en) * | 2020-06-11 | 2020-10-20 | 淮安澳洋顺昌光电技术有限公司 | Preparation method of MiniLED chip with high thrust value |
| CN111799353A (en) * | 2020-06-11 | 2020-10-20 | 淮安澳洋顺昌光电技术有限公司 | Method for preparing MiniLED chip |
| CN115188752A (en) | 2022-06-30 | 2022-10-14 | 湖北长江新型显示产业创新中心有限公司 | Display panel, display device and control method |
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| CN208889690U (en) * | 2018-10-18 | 2019-05-21 | 佛山市国星半导体技术有限公司 | A kind of microsize imaging LED chip |
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| TWI291246B (en) * | 2005-10-20 | 2007-12-11 | Epistar Corp | Light emitting device and method of forming the same |
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| CN103579461A (en) * | 2013-11-08 | 2014-02-12 | 中国科学院半导体研究所 | Method for manufacturing wafer full-color LED display array |
| CN208889690U (en) * | 2018-10-18 | 2019-05-21 | 佛山市国星半导体技术有限公司 | A kind of microsize imaging LED chip |
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