CN110875358A - White light emitting chip with LED and OLED connected in series and preparation method thereof - Google Patents
White light emitting chip with LED and OLED connected in series and preparation method thereof Download PDFInfo
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- CN110875358A CN110875358A CN201811011001.0A CN201811011001A CN110875358A CN 110875358 A CN110875358 A CN 110875358A CN 201811011001 A CN201811011001 A CN 201811011001A CN 110875358 A CN110875358 A CN 110875358A
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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Abstract
The invention discloses a white light emitting chip with an LED and an OLED connected in series, and relates to the technical field of illumination. The light emitting chip includes: a substrate; the blue LED structure is formed on the substrate and comprises an N electrode; an OLED structure formed on the blue LED structure and including a second transparent conductive layer; and the N electrode of the blue LED structure is electrically interconnected with the second transparent conducting layer of the OLED structure. According to the invention, the N electrode of the blue LED structure is electrically interconnected with the second transparent conducting layer of the OLED structure, so that the blue LED structure and the OLED structure are connected in series, and the advantages of high luminous efficiency of the blue LED and wide spectrum and adjustability of the yellow OLED are combined, thereby obtaining the white light source with high efficiency, high quality, long service life and low cost.
Description
Technical Field
The invention relates to the technical field of illumination, in particular to a white light emitting chip with an LED and an OLED connected in series and a preparation method thereof.
Background
At present, a red-green-blue three-primary-color LED mixed light and a blue LED excited yellow fluorescent powder are generally adopted in the field of LED white light illumination. The light emitting efficiency of the green light LED and the light emitting efficiency of the red light LED are lower than that of the blue light LED, and the red, green and blue three-primary-color LED needs to be driven independently in a light mixing mode, so that the cost is high. The mode of exciting the yellow fluorescent powder by the blue LED can cause the loss of a green part in a luminescent spectrum, the color rendering property is poor, and the excitation of the fluorescent powder by the blue LED can cause energy loss, so that the luminous efficiency of the blue LED is low. The OLED can emit white light by using OLED mixed light of red, green and blue three primary colors when realizing white light illumination, but the problems of great process difficulty and high cost are still faced. The organic multi-emission layer or the multiple doped single emission layer has the problems of low efficiency and short service life of the organic blue light emitting material.
Disclosure of Invention
Technical problem to be solved
In view of the above technical problems, the present invention provides a white light emitting chip with an LED and an OLED connected in series and a method for manufacturing the same, so as to obtain a white light source with high efficiency, high quality, long service life and low cost.
(II) technical scheme
According to an aspect of the present invention, there is provided a white light emitting chip with an LED connected in series with an OLED, comprising: a substrate; the blue LED structure is formed on the substrate and comprises an N electrode; an OLED structure formed on the blue LED structure and including a second transparent conductive layer; and the N electrode of the blue LED structure is electrically interconnected with the second transparent conducting layer of the OLED structure.
In further embodiments, the substrate is a sapphire substrate, a SiC substrate, a Si substrate, or a GaN substrate.
In a further embodiment, the blue LED structure further comprises: a mu-GaN layer grown on the substrate; an n-GaN layer grown on the mu-GaN layer; a multiple quantum well light emitting layer grown on the n-GaN layer; a p-GaN layer grown on the multiple quantum well light emitting layer; the first transparent conducting layer is prepared on the p-GaN layer; the P electrode is photoetched on the table top, wherein the table top is a part of the n-GaN layer exposed after a part of the multiple quantum well light-emitting layer and the P-GaN layer are etched on the n-GaN layer; and the distributed Bragg reflection layer surrounds the periphery of the blue LED structure.
In a further embodiment, the OLED structure further comprises: a hole transport layer grown on the transparent conductive layer; a yellow light emitting layer grown on the hole transport layer; an electron transport layer grown on the yellow light emitting layer; and the metal cathode Al is prepared on the electron transport layer.
In a further embodiment, the light emitting chip further comprises: UV packaging glue is coated on the periphery of the chip; and the glass cover plate is pressed and UV cured on the upper surface of the chip.
According to another aspect of the present invention, there is provided a method for preparing a white light emitting chip with an LED and an OLED connected in series, including:
manufacturing an N electrode, a P electrode and a distributed Bragg reflection layer of a blue light LED structure, and etching holes at the N electrode and the P electrode;
and manufacturing a second transparent conducting layer of the OLED structure, and electrically interconnecting the second transparent conducting layer with the N electrode of the LED structure through the hole.
In a further embodiment, before the manufacturing of the PN electrode of the blue LED structure, the method further includes:
preparing a GaN epitaxial wafer on a substrate;
carrying out ICP mesa etching on the GaN epitaxial wafer to obtain an independent blue light LED structure;
and preparing a first transparent conducting layer on the P table top of the blue LED structure.
In a further embodiment, said fabricating the second transparent conductive layer of the OLED structure further comprises:
grinding, polishing and thinning the back of the substrate;
manufacturing each functional layer of the OLED structure;
carrying out laser cutting on the substrate to obtain an independent white light emitting chip with the LED and the OLED connected in series;
and packaging the light-emitting chip.
In a further embodiment, said fabricating a GaN epitaxial wafer comprises: and sequentially growing a mu-GaN layer, an n-GaN layer, a multi-quantum well light-emitting layer and a p-GaN layer from bottom to top.
In a further embodiment, said fabricating each functional layer of said OLED structure comprises: and preparing a hole transport layer, a yellow luminous layer, an electron transport layer and a metal cathode Al from bottom to top in sequence.
(III) advantageous effects
According to the invention, the N electrode of the blue LED structure is electrically interconnected with the second transparent conducting layer of the OLED structure, so that the blue LED structure and the OLED structure are connected in series, and the advantages of high luminous efficiency of the blue LED and wide spectrum and adjustability of the yellow OLED are combined, thereby obtaining the white light source with high efficiency, high quality, long service life and low cost.
Drawings
Fig. 1 is a schematic structural diagram of a light emitting chip in which an LED and an OLED are combined in series in an embodiment of the present invention.
Fig. 2 is a flowchart of a method for manufacturing a light emitting chip in which an LED and an OLED are combined in series according to an embodiment of the present invention.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
It should be noted that in the drawings or description, the same drawing reference numerals are used for similar or identical parts. Implementations not depicted or described in the drawings are of a form known to those of ordinary skill in the art. Additionally, while exemplifications of parameters including particular values may be provided herein, it is to be understood that the parameters need not be exactly equal to the respective values, but may be approximated to the respective values within acceptable error margins or design constraints. In addition, directional terms such as "upper", "lower", "left", "right", "front", "rear", and the like, referred to in the following embodiments, are directions only referring to the drawings. Accordingly, the directional terminology is used for purposes of illustration and is in no way limiting. In addition, references to positions between two elements of the present invention, such as "above," "upper," "above," "below," "lower," "below," "left" or "right," may indicate that the two elements are in direct contact, or may indicate that the two elements are not in direct contact.
In one embodiment of the present invention, there is provided a white light emitting chip with an LED connected in series with an OLED, the chip including: a substrate 1; a blue LED structure formed on the substrate 1 and including an N electrode 7; an OLED structure formed on the blue LED structure, including a second transparent conductive layer 16; wherein the N-electrode 7 of the blue LED structure is electrically interconnected with the second transparent conductive layer 16 of the OLED structure.
The N electrode 7 of the blue light LED structure is electrically interconnected with the second transparent conducting layer 16 of the OLED structure, so that the LED structure and the OLED structure are connected in series, the advantages of high luminous efficiency of the blue light LED, wide spectrum and adjustability of the yellow light OLED are combined, and the white light source with high efficiency, high quality, long service life and low cost is obtained.
In the present embodiment, the substrate 1 may be, but is not limited to, a sapphire substrate, a SiC substrate, a Si substrate, or a GaN substrate.
In this embodiment, the blue LED structure further includes: a mu-GaN layer 2 grown on the substrate 1; an n-GaN layer 3 grown on the mu-GaN layer 2; a multiple quantum well light emitting layer 4 grown on the n-GaN layer 3; a p-GaN layer 5 grown on the multiple quantum well light-emitting layer 4; a first transparent conductive layer 6 prepared on the p-GaN layer 5; the P electrode 8 is photoetched on a table top, wherein the table top is a part of the n-GaN layer 3 exposed after a part of the multiple quantum well light-emitting layer 4 and the P-GaN layer 5 are etched on the n-GaN layer 3; and the distributed Bragg reflection layer 9 surrounds the periphery of the blue LED structure.
In this embodiment, the OLED structure further includes: a hole transport layer 10 grown on the transparent conductive layer 6; a yellow light-emitting layer 11 grown on the hole transport layer 10; an electron transport layer 12 grown on the yellow light emitting layer 11; and a metal cathode Al13 prepared on the electron transport layer 12.
In this embodiment, the light emitting chip further includes: UV packaging adhesive 14 coated around the chip; and the glass cover plate 15 is pressed and UV-cured on the upper surface of the chip.
In another embodiment of the present invention, a method for preparing a white light emitting chip with an LED connected in series with an OLED is provided, the method comprising:
manufacturing an N electrode 7, a P electrode 8 and a distributed Bragg reflection layer 9 of a blue light LED structure, and etching holes at the N electrode 7 and the P electrode 8;
and manufacturing a second transparent conducting layer (16) of the OLED structure, and realizing the electrical interconnection with the N electrode 7 of the LED structure through the hole.
When manufacturing the N electrode 7 and the P electrode 8 of the blue LED structure, negative photoresist is selected to photo-etch the N electrode 7 on the N-GaN and the P electrode 8 on the table top, metal is evaporated by adopting an electron beam evaporation method, and a PN electrode is formed after stripping.
The distributed Bragg reflection layer 9 is used for reflecting blue light emitted by the LED and insulating and protecting the LED, and a hole is formed in a PN electrode of the LED structure to expose the PN electrode through photoetching and etching, so that the second transparent conductive layer (16) of the OLED structure and the N electrode 7 of the LED structure are electrically interconnected.
In this embodiment, before manufacturing the PN electrode of the blue LED structure, the method further includes:
preparing a GaN epitaxial wafer on a substrate 1;
carrying out ICP mesa etching on the GaN epitaxial wafer to obtain an independent blue light LED structure;
and preparing a first transparent conductive layer 6 on the P mesa of the blue LED structure.
In this embodiment, after the second transparent conductive layer 16 of the OLED structure is fabricated, the method further includes:
grinding, polishing and thinning the back of the substrate;
manufacturing each functional layer of the OLED structure;
carrying out laser cutting on the substrate 1 to obtain an independent white light emitting chip with the LED and the OLED connected in series;
and packaging the light-emitting chip.
The blue substrate 1 is subjected to laser cutting, and an independent white light emitting chip with the LED and the OLED connected in series is obtained.
Wherein packaging the light emitting chip comprises: and cleaning and drying the glass packaging cover plate 15, transferring the glass packaging cover plate into a glove box filled with inert gas, coating UV packaging adhesive 14 on the periphery of the chip, and aligning, pressing and UV curing the chip and the glass cover plate 15.
In this embodiment, the fabricating the GaN epitaxial wafer includes: and a mu-GaN layer 2, an n-GaN layer 3, a multi-quantum well light-emitting layer 4 and a p-GaN layer 5 are grown in sequence from bottom to top.
In this embodiment, the manufacturing of each functional layer of the OLED structure includes: preparing a hole transport layer (NPB)10 and a yellow light-emitting layer (Alq) from bottom to top in sequence3+ rubene) 11, an electron transport layer 12 and a metal cathode Al 13.
The OLED structure comprises a substrate, a plurality of functional layers and a high-precision Mask plate, wherein the functional layers of the OLED structure can be manufactured by adopting an evaporation process, and the high-precision Mask plate is utilized in the evaporation process.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A white light emitting chip with LEDs connected in series with OLEDs is characterized by comprising: a substrate (1); a blue LED structure formed on the substrate (1) comprising an N-electrode (7); an OLED structure formed on the blue LED structure, comprising a second transparent conductive layer (16); and the N electrode (7) of the blue LED structure is electrically interconnected with the second transparent conducting layer (16) of the OLED structure.
2. The white light emitting chip with the LED and the OLED connected in series according to claim 1, characterized in that the substrate (1) is a sapphire substrate, a SiC substrate, a Si substrate or a GaN substrate.
3. The white light emitting chip with the LED and the OLED connected in series as claimed in claim 1, wherein the blue LED structure further comprises: a mu-GaN layer (2) grown on the substrate (1); an n-GaN layer (3) grown on the mu-GaN layer (2); a multiple quantum well light emitting layer (4) grown on the n-GaN layer (3); a p-GaN layer (5) grown on the multiple quantum well light emitting layer (4); a first transparent conductive layer (6) prepared on the p-GaN layer (5); the P electrode (8) is photoetched on a table top, wherein the table top is a part of the n-GaN layer (3) exposed after a part of the multiple quantum well light-emitting layer (4) and the P-GaN layer (5) are etched on the n-GaN layer (3); and the distributed Bragg reflection layer (9) is surrounded on the periphery of the blue LED structure.
4. The white light emitting chip with the LED and the OLED connected in series according to claim 1, wherein the OLED structure further comprises: a hole transport layer (10) grown on the transparent conductive layer (6); a yellow light-emitting layer (11) grown on the hole transport layer (10); an electron transport layer (12) grown on the yellow light emitting layer (11); and a metal cathode Al (13) prepared on the electron transport layer (12).
5. The white light emitting chip with the LED and the OLED connected in series as claimed in claim 1, wherein the light emitting chip further comprises: UV seals the glue (14), coat on the chip all around; and the glass cover plate (15) is pressed and UV cured on the upper surface of the chip.
6. A preparation method of a white light emitting chip with an LED and an OLED connected in series is characterized by comprising the following steps:
manufacturing an N electrode (7), a P electrode (8) and a distributed Bragg reflection layer (9) of a blue light LED structure, and etching holes at the N electrode (7) and the P electrode (8);
and manufacturing a second transparent conducting layer (16) of the OLED structure, and electrically interconnecting with the N electrode (7) of the LED structure through the hole.
7. The method for preparing a white light emitting chip with an LED and an OLED connected in series according to claim 6, wherein before manufacturing the PN electrode of the blue LED structure, the method further comprises:
preparing a GaN epitaxial wafer on a substrate (1);
carrying out ICP mesa etching on the GaN epitaxial wafer to obtain an independent blue light LED structure;
and preparing a first transparent conductive layer (6) on the P table top of the blue LED structure.
8. The method for preparing the white light emitting chip with the LED and the OLED connected in series according to claim 6, wherein the step of manufacturing the second transparent conductive layer (16) of the OLED structure further comprises:
grinding, polishing and thinning the back of the substrate;
manufacturing each functional layer of the OLED structure;
carrying out laser cutting on the substrate to obtain an independent white light emitting chip with the LED and the OLED connected in series;
and packaging the light-emitting chip.
9. The method for preparing a white light emitting chip with an LED and an OLED connected in series according to claim 7, wherein the preparing the GaN epitaxial wafer comprises: and a mu-GaN layer (2), an n-GaN layer (3), a multi-quantum well light-emitting layer (4) and a p-GaN layer (5) are grown in sequence from bottom to top.
10. The method for preparing a white light emitting chip with an LED and an OLED connected in series according to claim 8, wherein the step of fabricating each functional layer of the OLED structure comprises: a hole transport layer (10), a yellow light-emitting layer (11), an electron transport layer (12) and a metal cathode Al (13) are prepared from bottom to top in sequence.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811011001.0A CN110875358A (en) | 2018-08-31 | 2018-08-31 | White light emitting chip with LED and OLED connected in series and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811011001.0A CN110875358A (en) | 2018-08-31 | 2018-08-31 | White light emitting chip with LED and OLED connected in series and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111370543A (en) * | 2020-03-23 | 2020-07-03 | 中国科学院半导体研究所 | Tunable white light three-terminal light-emitting device combining LED and OLED and preparation method thereof |
| WO2023195351A1 (en) * | 2022-04-04 | 2023-10-12 | ソニーセミコンダクタソリューションズ株式会社 | Display apparatus and electronic device |
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| CN103094269A (en) * | 2013-02-07 | 2013-05-08 | 厦门市三安光电科技有限公司 | White light luminescent device and manufacturing method thereof |
| CN203674210U (en) * | 2014-01-22 | 2014-06-25 | 天津三安光电有限公司 | White light emitting device |
| US20170084671A1 (en) * | 2015-09-18 | 2017-03-23 | Universal Display Corporation | Hybrid display |
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- 2018-08-31 CN CN201811011001.0A patent/CN110875358A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103094269A (en) * | 2013-02-07 | 2013-05-08 | 厦门市三安光电科技有限公司 | White light luminescent device and manufacturing method thereof |
| CN203674210U (en) * | 2014-01-22 | 2014-06-25 | 天津三安光电有限公司 | White light emitting device |
| US20170084671A1 (en) * | 2015-09-18 | 2017-03-23 | Universal Display Corporation | Hybrid display |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111370543A (en) * | 2020-03-23 | 2020-07-03 | 中国科学院半导体研究所 | Tunable white light three-terminal light-emitting device combining LED and OLED and preparation method thereof |
| WO2023195351A1 (en) * | 2022-04-04 | 2023-10-12 | ソニーセミコンダクタソリューションズ株式会社 | Display apparatus and electronic device |
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Application publication date: 20200310 |