CN103094269A - White light luminescent device and manufacturing method thereof - Google Patents

White light luminescent device and manufacturing method thereof Download PDF

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CN103094269A
CN103094269A CN2013100488843A CN201310048884A CN103094269A CN 103094269 A CN103094269 A CN 103094269A CN 2013100488843 A CN2013100488843 A CN 2013100488843A CN 201310048884 A CN201310048884 A CN 201310048884A CN 103094269 A CN103094269 A CN 103094269A
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light emitting
emitting diode
inorganic
white light
emitting device
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CN2013100488843A
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CN103094269B (en
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江彦志
黄少华
赵志伟
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厦门市三安光电科技有限公司
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 and H01L51/00, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 and H01L51/00, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The invention discloses a white light luminescent device without the need for fluorescent powder for conversion and can give out light actively. Luminous sources of inorganic light emitting diodes and luminous sources of organic light emitting diodes (OLED) are mixed, and an electrical property combination in a parallel connection mode is conducted on the luminous sources of the inorganic light emitting diodes and the luminous sources of the OLEDs. The OLEDs are arranged on the utmost bottom layer, and the inorganic light emitting diodes are arranged on the OLEDs in an overlaying mode. The inorganic light emitting diodes include n (n is an integer which is greater than or equal to one) separate units. The inorganic light emitting diodes are matched with the OLEDs in voltage during parallel connection, and so that active type white light sources with high efficiency are achieved.

Description

白光发光器件及其制作方法 White light emitting device and manufacturing method thereof

技术领域 FIELD

[0001] 本发明涉及一种半导体发光器件,尤其是一种具有混合式白光发光器件及其制作方法。 [0001] The present invention relates to a semiconductor light emitting device, in particular a hybrid white light emitting device and its manufacturing method.

背景技术 Background technique

[0002] 随着固态照明应用迅速发展,其中重要的是如何发出白光,而在可见光光谱的波长范围380nm〜760nm内,此范围中是没有白色光的光谱,因为白光不是单一波长的光,而是由多种单一波长光合成的复合光,正如太阳光是由七种单色光合成的白色光,而彩色电视机中的白色光也是由三基色红、绿、蓝合成。 [0002] With the development of solid state lighting applications, where it is important how emits white light, in the wavelength range of the visible spectrum 380nm~760nm, this range is not white light spectrum, since the white light is not a single wavelength, and a plurality of single wavelength light is compound synthesized light as the sun light is synthesized by the seven kinds of monochromatic white light, the white light color television is also a three primary colors red, green, blue synthesis. 由此可知,要使发光器件发出白光,它的光谱特性应包括整个可见的光谱范围。 This indicates that to make the light emitting device emits white light, its spectral characteristics should include the entire visible spectral range. 但要制造这种性能的发光器件,在目前的工艺条件下是不可能的。 However, the light emitting device to be manufactured such properties, under the present conditions is impossible. 根据人们对可见光的研究,人眼睛所能见的白光,至少需两种光的混合,即二波长发光(蓝色光+黄色光)也就是目前普遍使用的蓝光发光源加上黄色荧光粉或者是三波长发光(蓝色光+绿色光+红色光)的模式,也有短波长的紫外发光源加上蓝、绿、红三色荧光粉。 The study of visible light, the human eye can see white, require a minimum of mixing of the two light, i.e., the two-wavelength light (yellow light + blue light) that is currently used by the blue light emitting source is combined with a yellow phosphor or three-wavelength light (blue light + green light + red light) mode, but also a short wavelength ultraviolet light emitting source together with blue, green, and red phosphors.

[0003] 另外,普遍使用的蓝光发光源加上无机黄色荧光粉或短波长的紫外发光源加上无机蓝、绿、红三色荧光粉,在转换成白光的过程,需要考虑到荧光粉本身的吸收及转换效率且荧光粉本身不是一个主动发光光源,致使白光转换效率必须依赖荧光粉的质量好坏。 [0003] Further, commonly used in blue light emitting source together with an inorganic yellow phosphor or short wavelength ultraviolet light emitting source together with an inorganic blue, green, and red phosphors in white light is converted into the process, consider the phosphor itself absorption and conversion efficiency of the phosphor and the light source itself is not an active, resulting in the conversion efficiency of the white phosphor must rely on good or bad quality.

[0004] 如图1所示为一种常规的白光发光器件,其包括:生长衬底110 ;由N型氮化镓基外延叠层121、发光层122、P型氮化镓基外延叠层123、透明导电层130、P电极140、N电极141以及荧光胶150。 [0004] As shown as a conventional white light emitting device shown in FIG. 1, which includes: the substrate 110; an N-type gallium nitride-based epitaxial laminate 121, a light emitting layer 122, P-type gallium nitride-based epitaxial laminate 123, a transparent conductive layer 130, P electrode 140, N 141 and the electrodes 150 fluorescent gel.

发明内容` SUMMARY `

[0005] 本发明提供一种具无须经过荧光粉转换且为主动发光的白光发光器件,混和无机发光二极管的发光源与有机发光二极管的发光源,两者并连在一起,来达成更高效率且主动式的白光光源。 [0005] The present invention provides a device without going through the phosphor and converted to active emitting white light emitting device, the light emitting source emitting source mixed with an inorganic light emitting diode OLED, and both together, to achieve more efficient and active white light source.

[0006] 无机发光二极管与有机发光二极管,两者以并联方式做电性结合,最底层为有机发光二极管,无机发光二极管叠置于有机发光二极管之上,所述无机发光二极管包含η(η ^ I的整数)个独立单元,与有机发光二极管并联时的电压匹配,从而发出白光。 [0006] The inorganic light emitting diodes and organic light emitting diode in parallel do both the electrical binding, the bottom is an OLED, inorganic light emitting diodes stacked on the organic light emitting diode, the light emitting diode comprising inorganic η (η ^ I is an integer) independent units in parallel when the voltage matching organic light emitting diode, thereby emitting white light.

[0007] 无机发光二极管包含η (η > 2的整数)个独立单元的电性连接方式为串联。 [0007] The inorganic light emitting diode comprising η (η> 2 is an integer) separate units electrically connected in series mode.

[0008] 所述无机发光二极管与有机发光二极管的电性连接方式为:所述无机发光二极管分为m (m > 2的整数)个模组,各个无机发光二极管模组为一个独立单元或多个独立单元串联而成,所述m个模组与有机发光二极管做并联电性结合。 [0008] The inorganic light emitting diode is electrically connected to the organic light emitting diode embodiment is: the inorganic light emitting diode is divided into m (m> 2 integer) number of modules, each module as inorganic light emitting diodes or a separate unit individual cells in series, the m organic light emitting diode module is made electrically coupled in parallel.

[0009] 无机发光二极管构成的m (m ^ 2的整数)个模组可以作为点光源,集成在第一衬底上,而有机发光二极管作为一个面光源,与所述无机发光二极管共用第一衬底。 [0009] m (m ^ integer of 2) inorganic light emitting diode is a point light source modules can be integrated on a first substrate, the organic light emitting diode as a light source surface, and the first common inorganic light emitting diodes substrate.

[0010] 所述白光发光器件的尺寸与所述第一衬底的尺寸一致。 [0010] The same size as the first substrate with white light emitting device.

[0011] 所述同一个衬底的尺寸可以为2英寸或4英寸或6英寸或8英寸及以上。 [0011] a substrate of the same size may be 2 inches or 4 inches or 6 inches or 8 inches or more. [0012] 无机发光二极管,包含:第一衬底,其具有第一表面与第二表面;?^型II1-V族基外延叠层、主动发光层与P型II1-V族基外延叠层,依次形成于所述第一衬底的第一表面上。 [0012] The inorganic light emitting diode, comprising: a first substrate having a first surface and a second surface; II1-V ^ aliphatic group type epitaxial layer stack, a light emitting active layer and the P-type II1-V Group-based epitaxial laminate? are sequentially formed on the first surface of the first substrate.

[0013] 在一些实施例中,所述无机发光二极管的发光波长介于200〜700nm。 [0013] In some embodiments, the inorganic light emitting diode emission wavelength is between 200~700nm.

[0014] 在一些实施例中,所述有机发光二极管具有一个或一个以上的主动发光层,且具一个或一个以上的发光波长,且不与无机发光二极管波长重叠。 [0014] In some embodiments, the organic light emitting diode having one or more light emitting active layer, and having one or more than one emission wavelength, and does not overlap with the wavelength of inorganic light emitting diodes.

[0015] 在一些实施例中,所述发出白光方式为440nnT470nm蓝光无机发光二极管搭配530〜560nm绿光及610nnT640nm红光有机发光二极管来达成。 [0015] In some embodiments, the white light is emitted blue way 440nnT470nm 530~560nm inorganic light emitting diodes with green and red organic light emitting diode 610nnT640nm achieved.

[0016] 在`一些实施例中,所述发出白光方式为530〜560nm绿光无机发光二极管搭配440nnT470nm蓝光及610nnT640nm红光有机发光二极管来达成。 [0016] In some embodiments', the white light is emitted way 530~560nm inorganic light emitting diodes with green 440nnT470nm blue and red organic light emitting diode 610nnT640nm achieved.

[0017] 在一些实施例中,所述发出白光方式为610nnT640nm红光无机发光二极管搭配440nnT470nm蓝光及53(T560nm绿光有机发光二极管来达成。 [0017] In some embodiments, the white light is emitted way 610nnT640nm inorganic light emitting diode with red and blue 440nnT470nm 53 (T560nm organic green light emitting diode achieved.

[0018] 在一些实施例中,所述发出白光方式为200nnT400nm紫外光无机发光二极管搭配440nnT470nm蓝光、530〜560nm绿光及610nnT640nm红光有机发光二极管来达成。 [0018] In some embodiments, the white light is emitted ultraviolet way 200nnT400nm inorganic light emitting diode with 440nnT470nm blue, 530~560nm 610nnT640nm red and green organic light emitting diode achieved.

[0019] 在一些实施例中,所述透光性生长衬底为蓝宝石生长衬底或碳化硅生长衬底。 [0019] In some embodiments, the light-transmitting substrate is a sapphire growth substrate, the growth of silicon carbide or the growth substrate.

[0020] 在一些实施例中,所述透明导电层为ΙΤ0、IWO或ΙΖ0。 [0020] In some embodiments, the transparent conductive layer is ΙΤ0, IWO or ΙΖ0.

[0021] 本发明的其它特征和优点将在随后的说明书中阐述,并且,部分地从说明书中变得显而易见,或者通过实施本发明而了解。 [0021] Other features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or learned by practice of the present invention. 本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。 The objectives and other advantages of the present invention can be in the specification, the drawings, and particularly pointed out in the structure realized and attained by the claims.

附图说明 BRIEF DESCRIPTION

[0022] 图1为现有的白光发光器件的结构示意图。 [0022] FIG. 1 is a schematic view of a conventional white light emitting device.

[0023] 图2为本发明实施例1之一种正装白光发光器件结构示意图。 [0023] FIG. 2 of Example 1 is a schematic implement a white light emitting device structure of the present invention being installed.

[0024] 图3〜图9为图2所示正装白光发光器件制作过程的截面示意图。 [0024] FIG 3 ~ FIG. 9 is a schematic sectional view shown in FIG white light emitting device fabrication process 2 suits.

[0025] 图10为本发明实施例2之一种倒装白光发光器件结构示意图。 [0025] FIG 10 2 a schematic view of a flip white light emitting device structure embodiment of the present invention.

[0026] 图11〜图18为图10所示倒装白光发光器件制作过程的截面示意图。 [0026] FIG. 18 is a schematic sectional view of FIG. 11~ flip white light emitting device manufacturing process 10 shown in FIG.

[0027] 图19为图2所示倒装白光发光器件制作过程的俯视图。 [0027] FIG. 19 is a plan view of a flip white light emitting device fabrication process shown in Fig.

[0028] 图中各标号表不: [0028] Each reference numeral in FIG table is not:

110,210,310:第一衬底(生长衬底); 210, 310: a first substrate (growth substrate);

121,221,321:N型氮化镓基外延叠层; 121,221,321: N-type gallium nitride-based epitaxial laminate;

122,222,322:发光层; 122,222,322: light emitting layer;

123,223,323:P型氮化镓基外延叠层; 123,223,323: P-type gallium nitride-based epitaxial laminate;

130,230,330:透明导电层; 130, 230: transparent conductive layer;

140,240,340:P 电极; 140,240,340: P electrode;

141,241,341:N 电极; 141,241,341: N electrode;

150:荧光胶; 150: fluorescent plastic;

250,350:绝缘保护层; 250, 350: insulating protective layer;

260,360:内部PN导线连接层; 260, 360: inner layer conductor connection PN;

261,361:正极连接层; 261,361: a positive electrode connecting layer;

262,362:负极连接层; 270,370:有机发光器件阳极; 262,362: the negative electrode connecting layer; 270, 370: organic light emitting device anode;

280,380:有机发光层; 280, 380: organic light emitting layer;

290,390:有机发光器件阴极; 290,390: organic light emitting device cathode;

410:第二衬底(绝缘衬底)。 410: second substrate (insulating substrate).

具体实施方式 Detailed ways

[0029] 下面将结合示意图对本发明的白光发光器件结构及其制作方法进行更详细的描述,其中表示了本发明的优选实施例,应该理解本领域技术人员可以修改在此描述的本发明,而仍然实现本发明的有利效果。 [0029] below with reference to a schematic view of a white light emitting device structure and fabrication method of the present invention will be described in more detail, which shows a preferred embodiment of the present invention, it should be understood by those skilled in the art may modify the invention herein described, and still achieve beneficial effects of the present invention. 因此,下列描述应当被理解为对于本领域技术人员的广泛知道,而并不作为对本发明的限制。 Therefore, the following description should be understood as widely known to the skilled person, and not as a limitation on the present invention.

[0030] 以下各实施例公开了白光发光器件及其制作方法,其中白光发光器件的制作方法,包括无机发光二极管与有机发光二极管的制作步骤。 [0030] The following embodiment discloses a white light emitting device and a manufacturing method, wherein the method for manufacturing a white light emitting device comprising inorganic light emitting diodes and organic light emitting diode manufacturing steps.

[0031] 无机发光二极管的制作步骤: [0031] The inorganic light emitting diode fabrication steps:

(1)无机发光二极管,II1-V族基发光外延叠层形成于所述透光性生长衬底的第一表面上,包含II1-V族基N型外延叠层、主动发光层与II1-V族基P型外延叠层; (1) inorganic light emitting diodes, II1-V Group-based light emitting epitaxial layer stack formed on the growth substrate a first light transmitting surface, aromatic group comprising II1-V N-type epitaxial layer stack, the active layer and the light emitting II1- group V P-type epitaxial laminate substrate;

(2)此器件中,可利用湿式蚀刻或干式蚀刻来形成η个独立单元,再藉由金属布线彼此形成串联或并联。 (2) this device may be by a wet etching or dry etching to form η independent units, and then a metal wiring formed by series or parallel with each other.

[0032] 有机发光二极管及并联连接的制作步骤: [0032] The organic light emitting diode and the manufacturing steps are connected in parallel:

(O在正装白光发光器件中是依序将透明性阳极、电洞传输层、主动发光层、电子传输层、反射式阴极直接蒸镀在第一衬底的第二表面上,再将透明性的阳极与无机发光二极管P型区做连接,反射式的阴极与无机发光二极管N型区做连接; (O suits the white light emitting device is sequentially transparent anode, hole transport layer, a light emitting active layer, the electron transport layer, a reflective cathode deposited directly on the second surface of the first substrate, and then the transparency the anode of inorganic light emitting diodes connected to the P-type region do, reflective cathode and inorganic light emitting diode connected N-type region do;

(2)在倒装白光发光器件中是依序将透明性阳极、电洞传输层、主动发光层、电子传输层、反射式阴极蒸镀在第二衬底上,再将无机发光二极管倒置与蒸镀在第二衬底上的有机发光二极管并联,将透明性阳极与无机发光二极管P型区做连接,反射式阴极与无机发光二极管N型区做连接。 (2) is sequentially transparent anode, hole transport layer, a light emitting active layer, the electron transport layer, a reflective cathode deposited on a second substrate, then the inorganic light emitting diodes with an inverted in the flip-white light emitting devices the organic light emitting diode in parallel deposited on the second substrate, transparent anode and an inorganic light emitting diode connected P-type region do, reflective cathode and inorganic light emitting diode connected N-type region do.

[0033] 白光发光器件中,用于混合发出白光的无机发光二极管与有机发光二极管的波长搭配形式可以为以下几种: Inorganic light emitting diodes and organic light emitting diode with a wavelength in the form [0033] The white light emitting device for mixing emit white light may be the following:

(I)白光形成方式为440nnT470nm蓝光无机发光二极管搭配530〜560nm绿光及610nnT640nm红光有机发光二极管来达成。 (I) is formed so as 440nnT470nm white inorganic light emitting diode with 530~560nm blue green and red organic light emitting diode 610nnT640nm achieved.

[0034] (2)白光形成方式为530〜560nm绿光无机发光二极管搭配440nnT470nm蓝光及610nnT640nm红光有机发光二极管来达成。 [0034] (2) is formed so as 530~560nm white inorganic light emitting diodes with green 440nnT470nm blue and red organic light emitting diode 610nnT640nm achieved.

[0035] (3)白光形成方式为610nnT640nm红光无机发光二极管搭配440nnT470nm蓝光及53(T560nm绿光有机发光二极管来达成。 [0035] (3) is formed so as 610nnT640nm white inorganic light emitting diode with red and blue 440nnT470nm 53 (T560nm organic green light emitting diode achieved.

[0036] (4)白光形成方式为200nnT400nm紫外光无机发光二极管搭配440nnT470nm蓝光、530〜560nm绿光及610nnT640nm红光有机发光二极管来达成。 [0036] (4) is formed so as 200nnT400nm white inorganic ultraviolet light-emitting diodes with 440nnT470nm blue, 530~560nm green and red organic light emitting diode 610nnT640nm achieved.

[0037] 下面结合附图和实施例对本发明进一步说明。 Figures and examples further illustrate the present invention [0037] The following binding.

[0038] 实施例1 [0038] Example 1

图2所示为一种正装白光发光器件,其自下而上包括:有机发光器件阴极270,有机发光层280,有机发光器件阳极290,第一衬底210,N型氮化镓基外延叠层221,发光层222,P型氮化镓基外延叠层223,透明导电层230,P电极240,N电极241,绝缘保护层250,内部PN导线连接层260,正极连接层261,负极连接层262。 As shown in FIG. 2 as a white light emitting device is loaded, from bottom to top comprising: cathode 270 organic light emitting device, the organic light emitting layer 280, an organic light emitting device anode 290, a first substrate 210, N-type gallium nitride-based epitaxial stack layer 221, a light emitting layer 222, P-type gallium nitride epitaxial laminate substrate 223, the transparent conductive layer 230, P electrodes 240, N electrode 241, an insulating protective layer 250, inner layer 260 PN wire connecting the positive electrode connection layer 261 and a cathode connected layer 262.

[0039] 上述正装白光发光器件的制作工艺,具体包括下面步骤。 [0039] The manufacturing process is loaded white light emitting device, comprises the following steps.

[0040] 如图3所示,先提供第一衬底210,例如透光性蓝宝石衬底,在第一表面形成N型氮化镓基半导体层221,发光层222,P型氮化镓基外延叠层223,透明导电层230,例如ΙΤ0。 [0040] 3, to provide a first substrate 210, for example, translucent sapphire substrate, an N-type gallium nitride based semiconductor layer 221, light emitting layer 222, P-type gallium nitride in the first surface epitaxial layer stack 223, the transparent conductive layer 230, e.g. ΙΤ0.

[0041] 如图4所示,采用干式蚀刻的方式形成平台。 As shown in [0041] FIG. 4, a dry etching is formed internet.

[0042] 如图5所示,采用干式蚀刻的方式形成η (η≥2的整数)个独立单元。 As shown in [0042] FIG. 5, using the dry etching is formed [eta] (η≥2 integer) number of independent units.

[0043] 如图6所示,采用化学气相沉积(CVD)的方式形成绝缘保护层250,并采用黄光与湿式蚀刻来定义出绝缘保护层图形。 [0043] As shown in FIG 6, using a chemical vapor deposition (CVD) of the protective insulating layer 250 is formed, and the yellow wet etching using the insulating protective layer is defined pattern.

[0044] 如图7所示,采用黄光及物理气相沉积(PVD)方式定义出P电极240,N电极241,及内部PN导线连接层260来形成内部串接。 [0044] As shown in FIG 7, using the yellow and physical vapor deposition (PVD) define a P-electrode 240, N electrode 241, and internal wire connection PN layer 260 to form an internal tandem.

[0045] 如图8所示,在第一衬底210的第二表面利用物理气相沉积(PVD)方式依序形成有机发光器件阳极270,有机发光层280,有机发光器件阴极290,其中阳极270由透光性材料构成。 [0045] As shown, the use of physical vapor deposition of a second surface of the first substrate 210 (PVD) 270 sequentially embodiment, the organic light emitting layer 280, an organic light-emitting device 8 is formed cathode 290 organic light emitting device anode, wherein the anode 270 It made of a translucent material.

[0046] 如图9所示,采用物理气相沉积(PVD)方式形成正极连接层261,将P电极240与机发光器件阳极270做连接;采用物理气相沉积(PVD)方式形成负极连接层262,将N电极241与有机发光器件阴极290做连接,至此形成正装白光发光器件,经由无机发光二极管器件与有机发光二极管器件两者波长的搭配,能够调配出白光光源且此光源并无经由光转换来达成,所以无任何光损失在光转换的过程之中,能制造更高效率的白光器件。 [0046] As shown, physical vapor deposition (PVD) 9 is formed of the positive electrode connection layer 261, the P-electrode 240 and the anode of the light emitting device unit 270 to make the connection; physical vapor deposition (PVD) connected to the negative electrode layer 262 is formed, the N-electrode 241 and the cathode of the organic light emitting device 290 to make the connection, thus forming a white light emitting device is loaded, via an inorganic light emitting diode device with both the wavelength organic light emitting diode device with the possible deployment of a white light source and this light is not converted to light via reached, so no loss of any light in the process of conversion of light, can be manufactured more efficient white light emitting device.

[0047] 实施例2 [0047] Example 2

图10所示为一种具有倒装白光发光器件,其自下而上包括:第二衬底410,有机发光器件阳极370,有机发光层380,有机发光器件阴极390,正极连接层361,负极连接层362,P电极340,N电极341,内部PN导线连接层360,绝缘保护层350,透明导电层330,P型氮化镓基外延叠层323,发光层322,N型氮化镓基外延叠层321,生长衬底310。 As shown in FIG. 10 is a white light emitting device having a flip, which comprises from bottom to top: a second substrate 410, organic light emitting device the anode 370, the organic light emitting layer 380, the cathode 390 organic light emitting device, the positive electrode connection layer 361, a negative electrode the connection layer 362, P electrodes 340, N electrodes 341, PN internal wire connection layer 360, the protective insulating layer 350, a transparent conductive layer 330, P-type gallium nitride-based epitaxial laminate 323, a light emitting layer 322, N-type gallium nitride-based epitaxial layer stack 321, the growth substrate 310.

[0048] 上述倒装白光发光器件的制作工艺,具体包括下面步骤。 [0048] The production process of the above flip-chip white light emitting device, comprises the following steps.

[0049] 如图11所示,先提供第一衬底(生长衬底)310,例如碳化硅衬底,在第一表面形成N型氮化镓基半导体层321,发光层322,P型氮化镓基外延叠层323以及透明导电层330,例如ΙΖ0。 [0049] As shown in FIG 11, first providing a first substrate (growth substrate) 310, such as silicon carbide substrate, a 322, P-type gallium nitride-based nitrogen of the N-type semiconductor layer 321, the light emitting layer in the first surface gallium epitaxial laminate substrate 323 and a transparent conductive layer 330, e.g. ΙΖ0.

[0050] 如图12所示,采用干式蚀刻的方式形成平台。 [0050] As shown in FIG 12, a dry etching is formed internet.

[0051] 如图13所示,采用湿式蚀刻的方式形成η个独立单元。 [0051] As shown, is formed using wet etching 13 η independent units.

[0052] 如图14所示,采用化学气相沉积(CVD)的方式形成绝缘保护层350,并采用黄光与湿式蚀刻来定义出绝缘保护层图形。 [0052] As shown by chemical vapor deposition (CVD) 14 is formed in the insulating protective layer 350, and the yellow wet etching using the insulating protective layer is defined pattern.

[0053] 如图15所示,采用黄光及物理气相沉积(PVD)方式定义出P电极340,N电极341,及内部PN导线连接层360来形成内部串接。 As shown in [0053] 15, using the yellow and physical vapor deposition (PVD) define a P-electrode 340, N electrodes 341, and internal wire connection PN 360 to form an inner layer in series.

[0054] 如图16所示,对第一衬底310减薄并将其倒置。 [0054] As shown in FIG 16, the first substrate 310 upside down and thinned.

[0055] 如图17所示,在第二衬底(绝缘衬底)410利用物理气相沉积(PVD)方式依序形成有机发光器件阴极390,有机发光层380,有机发光器件阳极370,并采用物理气相沉积(PVD)方式形成正极连接层361及负极连接层362,其中有机发光层380包括电洞传输层、主动发光层、电子传输层。 [0055] shown in Figure 17, the second substrate (insulating substrate) 410 using a physical vapor deposition (PVD) 390 sequentially embodiment, the organic light emitting layer 380, an organic light emitting device OLED anode cathode 370 is formed, and using physical vapor deposition (PVD) layer 361 is formed connected to the positive electrode and the negative electrode connection layer 362, wherein the organic light emitting layer 380 comprises a hole transport layer, a light emitting active layer, the electron transport layer. [0056] 如图18所示,采用倒置固晶方式藉由正极连接层361,将P电极340以及机发光器件阳极370做连接;采用倒置固晶方式藉由负极连接层362,将N电极341以及机发光器件阴极390做连接,至此完成倒装白光发光器件的制作经由无机发光二极管器件与有机发光二极管器件两者波长的搭配,能够调配出白光光源且此光源并无经由光转换来达成,所以无任何光损失在光转换的过程之中,能制造更高效率的白光器件。 [0056] As shown in FIG 18, crystalline solid with inverted manner by connecting the positive electrode layer 361, the P-electrode 340 and the anode of the light emitting device unit 370 to make the connection; crystalline solid with inverted manner by connecting the negative electrode layer 362, the N-electrode 341 and a cathode of the light emitting device unit 390 to make the connection, thereby completing the flip-white light emitting device produced inorganic light emitting diode device via the organic light emitting diode device with both wavelengths, the formulation can be a white light source and this light source is not achieved via conversion, Therefore, without any light loss in the process of conversion of light, it can be manufactured more efficient white light emitting device.

[0057] 实施例3 [0057] Example 3

本实施例与实施例1的区别在于:将无机发光二极管划分为多个模组,每个模组可以为一个独立单元或多个独立单元串联而成。 This embodiment differs from the embodiment 1 in that: the inorganic light emitting diode is divided into a plurality of modules, each module can be connected in series to a plurality of independent stand-alone unit or units. 如图19所示,分别具有相同数目的η (n ^ 2的整数)个独立单元无机发光二极管串联后构成2个模组,所述2个模组与有机发光二极管(图中未示出)做并联电性结合。 19, each having the same number of η (n ^ 2 is an integer) separate units of the inorganic light emitting diode after the two modules in series, the two organic light emitting diode modules (not shown) do electrically connected in parallel combination.

[0058] 在本实施例中,上述无机发光二极管构成的2个模组作为点光源,通过集成方式,形成于在第一衬底210上,而有机发光二极管作为一个面光源,与无机发光二极管共用第一衬底210。 [0058] In the present embodiment, the two modules of the inorganic light emitting diode as a light source, the integrated manner, is formed on the first substrate at 210, the organic light emitting diode as a surface light source, and inorganic light emitting diodes the common first substrate 210.

[0059] 本实施例形成的白光发光器件的尺寸与所述第一衬底的尺寸一致,第一衬底210的尺寸4英寸。 Same size as the first substrate forming a white light emitting device according to embodiments of the [0059] present, the first substrate 210 size of 4 inches.

[0060] 实施例4 [0060] Example 4

本实施例与实施例2的区别在于:先制备好LED芯片,然后采用旋转盘吸取设备将LED芯片按粒置于有机发光二极管上面,并采用固晶方式进行连接。 This embodiment differs from the second embodiment in that: first preparing good LED chip, and a rotary disc according to the LED chip suction apparatus granulation was placed above the organic light emitting diode, and is connected by solid crystal manner.

[0061] 具体可以为:首先,采用常规LED芯片工艺制备获得一系列LED芯片。 [0061] specifically as follows: First, a conventional process using an LED chip to obtain a series of LED chips. 接着,在绝缘衬底410利用物理气相沉积(PVD)方式依序形成有机发光器件阴极390,有机发光层380,有机发光器件阳极370,并采用物理气相沉积(PVD)方式形成正极连接层361及负极连接层362,其中有机发光层380包括电洞传输层、主动发光层、电子传输层。 Next, the insulating substrate 410 using physical vapor deposition (PVD) mode sequentially cathode 390 organic light emitting device, the organic light emitting layer 380 is formed, the organic light emitting device the anode 370, and physical vapor deposition (PVD) connected to the positive electrode layer 361 is formed and connected to the negative electrode layer 362, wherein the organic light emitting layer 380 comprises a hole transport layer, a light emitting active layer, the electron transport layer. 然后,米用旋转盘吸取设备将LED芯片按粒置于有机发光二极管上面,并采用固晶方式进行连接。 Then, rice suction device with a rotating disk by the LED chip granulation was placed above the organic light emitting diode, and is connected by solid crystal manner.

[0062] 本实施例适用于大尺寸的面光源,可根据应用需要设置绝缘衬底的面积。 Area [0062] The surface light source of the present embodiment is suitable for a large-sized embodiments, the insulating substrate may be provided according to application needs.

Claims (16)

1.光发光器件,包括:无机发光二极管与有机发光二极管,两者以并联方式做电性结合,其特征在于:所述无机发光二极管叠置于所述有机发光二极管之上,所述无机发光二极管包含η (η ^ I的整数)个独立单元,当器件通电后,激发无机发光二极管和有机二极管发光,两者混合从而发出白光。 1. The light-emitting device, comprising: an inorganic light-emitting diodes and organic light emitting diode in parallel do both the electrical binding, wherein: the inorganic light emitting diode stacked on said organic light emitting diode, said inorganic luminescent diode comprises η (η ^ I is an integer) separate units, when the device is powered, the organic and inorganic light emitting diode excitation light emitting diode, thereby emitting white light mixing both.
2.根据权利要求1所述的白光发光器件,其特征在于:所述无机发光二极管包含η(η ^ 2的整数)个独立单元,其电性连接方式为串联。 2. The white light emitting device according to claim 1, wherein: said inorganic light emitting diode comprising η (η ^ integer) separate units electrically connected in series mode.
3.根据权利要求2所述的白光发光器件,其特征在于:所述无机发光二极管与有机发光二极管的电性连接方式为:所述无机发光二极管分为m (m > 2的整数)个模组,各个无机发光二极管模组为一个独立单元或多个独立单元串联而成,所述m个模组与有机发光二极管做并联电性结合。 3. The white light emitting device according to claim 2, wherein: the inorganic light emitting diode is electrically connected to the organic light emitting diode embodiment is: the inorganic light emitting diode is divided into m (m> is an integer of 2) modulo group, inorganic light emitting diodes of each module is a stand-alone unit or a plurality of individual cells connected in series, the m organic light emitting diode module is made electrically coupled in parallel.
4.根据权利要求1所述的白光发光器件,其特征在于:所述无机发光二极管与有机发光二极管并联的形式为直接并联或倒装并联形式。 4. The white light emitting device according to claim 1, wherein: the form of the inorganic light emitting diode and an organic light emitting diode in parallel to parallel form directly parallel or flip.
5.根据权利要求4所述的白光发光器件,其特征在于:还包括第一衬底,其具有第一表面与第二表面;所述无机发光二极管形成于第一表面上,所述有机发光二极管形成于第二表面上。 The white light emitting device according to claim 4, characterized in further comprising: a first substrate having a first surface and a second surface; said inorganic light emitting diode is formed on the first surface, the organic light emitting diode formed on the second surface.
6.根据权利要求5所述的混合式白光发光器件,其特征在于:所述白光发光器件的尺寸与所述第一衬底的尺寸一致。 6. The hybrid type white light emitting device according to claim 5, wherein: same size as the first substrate of the white light emitting device.
7.根据权利要求4所述的白光发光器件,其特征在于:所述有机发光二极管还包含第二衬底,其具有第一表面与第二表面,所述有机发光二极管形成于第一表面上,所述无机发光二极管倒装形成于所述有机发光二极管之上。 7. The white light emitting device according to claim 4, wherein: said organic light emitting diode further comprising a second substrate having a first surface and a second surface, the organic light emitting diode formed on the first surface the flip inorganic light emitting diodes formed on the organic light emitting diode.
8.根据权利要求1所述的白光发光器件,其特征在于:所述有机发光二极管具有一个或一个以上的主动发光层,且具一个或一个以上的发光波长,其不与无机发光二极管波长重叠。 8. The white light emitting device according to claim 1, wherein: said organic light emitting diode having one or more light emitting active layer, and having one or more than one emission wavelength which does not overlap with the wavelength of inorganic light emitting diodes .
9.根据权利要求8所述的白光发光器件,其特征在于:所述白光发光器件发出白光的方式为440nnT470nm蓝光无机发光二极管搭配530〜560nm绿光及610nnT640nm红光有机发光二极管来达成。 9. The white light emitting device according to claim 8, wherein: the white light emitting device emits white light blue way 440nnT470nm 530~560nm inorganic light emitting diodes with green and red organic light emitting diode 610nnT640nm achieved.
10.根据权利要求8所述的白光发光器件,其特征在于:所述白光发光器件发出白光的方式为530〜560nm绿光无机发光二极管搭配440nnT470nm蓝光及610nnT640nm红光有机发光二极管来达成。 10. The white light emitting device according to claim 8, wherein: the white light emitting device emits white light way for inorganic light emitting diodes with green 530~560nm 440nnT470nm blue and red organic light emitting diode 610nnT640nm achieved.
11.根据权利要求8所述的白光发光器件,其特征在于:所述白光发光器件发出白光的方式为610nnT640nm红光无机发光二极管搭配440nnT470nm蓝光及530〜560nm绿光有机发光二极管来达成。 11. The white light emitting device according to claim 8, wherein: the white light emitting device emits white light way for 610nnT640nm inorganic light emitting diode with red and blue 440nnT470nm organic green light emitting diode 530~560nm achieved.
12.根据权利要求8所述的白光发光器件,其特征在于:所述白光发光器件发出白光的方式为200nnT400nm紫外光无机发光二极管搭配440nnT470nm蓝光、53CT560nm绿光及610nnT640nm红光有机发光二极管来达成。 12. The white light emitting device according to claim 8, wherein: the white light emitting device emits white light way for 200nnT400nm ultraviolet light emitting diode with an inorganic 440nnT470nm blue, 53CT560nm 610nnT640nm red and green organic light emitting diode achieved.
13.光发光器件的制作方法,包括步骤: 1)分别制作无机发光二极管和有机发光二极管,其中所述无机发光二极管叠置于所述有机发光二极管之上,所述无机发光二极管包含η (η > I的整数)个独立单元; 2)并联连接所述无机发光二极管与所述有机发光二极管,当器件通电后,激发无机发光二极管和有机二极管发光,两者混合从而发出白光。 13. A method for manufacturing a light emitting device, comprising the steps of: 1) were produced inorganic light emitting diode and an organic light emitting diode, wherein the inorganic light emitting diodes disposed over the stacked organic light emitting diode, the light emitting diode comprising inorganic η (η > I is an integer) separate units; 2) inorganic light emitting diodes connected in parallel with the said organic light emitting diode when the device is powered, the organic and inorganic light emitting diode excitation light emitting diode, thereby emitting white light mixing both.
14.根据权利要求13所述的白光发光器件的制作方法,所述步骤I)包括: 提供第一衬底,其具有两个表面; 在所述第一衬底的第一表面上外延生长N型半导体材料层、主动发光层和P型半导体材料层,形成无机发光二极管; 在所述第一衬底的第二表面上直接蒸镀透明性阳极、电洞传输层、主动发光层、电子传输层与反射式的阴极,形成有机发光二极管。 14. A method for manufacturing a white light emitting device according to claim 13, said step I) comprises: providing a first substrate having two surfaces; on the first surface of the first substrate is epitaxially grown N type semiconductor material layer, a light emitting active layer and a P-type semiconductor material layer, forming an inorganic light emitting diode; a transparent anode deposited directly on the second surface of the first substrate, the hole transport layer, a light emitting active layer, the electron transport a reflective layer and a cathode, an organic light emitting diode.
15.根据权利要求13所述的白光发光器件的制作方法,所述步骤I)包括: 提供第一衬底,其具有两个表面,在所述第一衬底的第一表面上外延生长N型半导体材料层、主动发光层和P型半导体材料层,形成无机发光二极管; 提供第二衬底,其具有两个表面,在所述第二衬底的第一表面上依次蒸镀透明性阳极、电洞传输层、主动发光层、电子传输层、反射式阴极,形成有机发光二极管; 将所述无机发光二极管倒装置于所述有机发光二极管上。 15. A method for manufacturing a white light emitting device according to claim 13, said step I) comprises: providing a first substrate having two surfaces, on the first surface of the first substrate is epitaxially grown N type semiconductor material layer, a light emitting active layer and a P-type semiconductor material layer, forming an inorganic light-emitting diodes; providing a second substrate having two surfaces, a transparent anode are sequentially deposited on the first surface of the second substrate , hole transport layer, a light emitting active layer, the electron transport layer, a reflective cathode, an organic light emitting diode; flip the inorganic light emitting diode disposed on the organic light emitting diode.
16.根据权利要求14或15所述的白光发光器件的制作方法,所述步骤2)为:将所述有机发光二极管的透明性阳极与无机发光二极管的P型半导体材料层做连接,反射式的阴极与无机发光二极管的N型半导体材料层做连接。 16. A method for manufacturing a white light emitting device of claim 14 or claim 15, said step 2) to: a transparent anode of the organic light emitting diode and the P-type semiconductor material layer made of an inorganic light emitting diode is connected, reflective the cathode of the N-type semiconductor material layer made of inorganic light emitting diodes are connected.
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