DE102011056813A1 - Method for producing a light-emitting diode - Google Patents

Method for producing a light-emitting diode

Info

Publication number
DE102011056813A1
DE102011056813A1 DE102011056813A DE102011056813A DE102011056813A1 DE 102011056813 A1 DE102011056813 A1 DE 102011056813A1 DE 102011056813 A DE102011056813 A DE 102011056813A DE 102011056813 A DE102011056813 A DE 102011056813A DE 102011056813 A1 DE102011056813 A1 DE 102011056813A1
Authority
DE
Germany
Prior art keywords
phosphor
electrically charged
charged particles
led chip
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102011056813A
Other languages
German (de)
Inventor
Ion Stoll
Hailing Cui
Kirstin Petersen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osram Opto Semiconductors GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102011056813A priority Critical patent/DE102011056813A1/en
Publication of DE102011056813A1 publication Critical patent/DE102011056813A1/en
Application status is Withdrawn legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • H01L33/504Elements with two or more wavelength conversion materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0041Processes relating to wavelength conversion elements

Abstract

A method for producing a light-emitting diode is provided with the following steps: provision of a light-emitting diode chip 1, provision of a cladding material 2 for the light-emitting diode chip 1, provision of electrically charged particles 31 of a first phosphor, Introducing the electrically charged particles (31) of the first phosphor into the wrapping material (2), wrapping the light-emitting diode chip (1) with the wrapping material (2), applying at least one part of the electrically charged particles (31) of the first phosphor Part of an outer surface (1a) of the LED chip (1) by sedimentation of the particles (31) in the wrapping material (2), wherein - the sedimentation under the influence of an electric force (4) takes place on the electrically charged particles (31) of the first phosphor.

Description

  • A method for producing a light-emitting diode is specified.
  • An object to be solved is to provide a method for producing a light-emitting diode, which can be carried out particularly economically.
  • In accordance with at least one embodiment of the method, a light-emitting diode chip is provided. The light-emitting diode chip is, in particular, a light-emitting diode chip which emits UV radiation and / or blue light during operation. The light-emitting diode chip may be based, for example, on a III-V compound semiconductor material, in particular on a nitride compound semiconductor material. The LED chip is suitable in operation, for example, for generating UV radiation and / or blue light.
  • A III-V compound semiconductor material comprises at least one element of the third main group such as B, Al, Ga, In, and a fifth main group element such as N, P, As. In particular, the term "III-V compound semiconductor material" includes the group of binary, ternary or quaternary compounds containing at least one element from the third main group and at least one element from the fifth main group, for example nitride and phosphide compound semiconductors. Such a binary, ternary or quaternary compound may also have, for example, one or more dopants and additional constituents.
  • "Based on nitride compound semiconductor material" in the present context means that a semiconductor layer sequence or at least a part thereof, particularly preferably at least one radiation zone provided for active zone and / or a growth substrate wafer, a nitride compound semiconductor material, preferably Al n Ga m In 1-nm N or consists of this, where 0 ≤ n ≤ 1, 0 ≤ m ≤ 1 and n + m ≤ 1. This material does not necessarily have a mathematically exact composition according to the above formula. Rather, it may, for example, have one or more dopants and additional constituents. For the sake of simplicity, however, the above formula contains only the essential constituents of the crystal lattice (Al, Ga, In, N), even if these can be partially replaced and / or supplemented by small amounts of further substances.
  • The LED chip has an outer surface that limits it to the outside. During operation of the light-emitting diode chip, at least part of the electromagnetic radiation generated in the light-emitting diode chip exits through at least part of the outer surface.
  • The LED chip can be arranged when providing on a connection carrier such as a printed circuit board or a leadframe. For example, the LED chip is mechanically and electrically connected to the connection carrier. Furthermore, it is possible that not only a single light-emitting diode chip but two or more light-emitting diode chips are provided. The light-emitting diode chips are then in particular of a similar construction, that is to say they emit electromagnetic radiation in the same wavelength range during operation as part of the manufacturing tolerance.
  • In accordance with at least one embodiment of the method, a cladding material for the light-emitting diode chip is provided. The wrapping material is in particular a plastic material which is at least partially permeable to electromagnetic radiation generated by the LED chip during operation. For example, the wrapping material may be a silicone or a silicone-epoxy hybrid material. Further, it is possible that the cladding material is a glassy material, for example, the cladding material is then a sol-gel material. The wrapping material is provided in a liquid or viscous form. The wrapping material may in particular be electrically insulating.
  • According to at least one embodiment of the method, electrically charged particles of a first phosphor are provided.
  • The phosphor may be, for example, a ceramic phosphor such as one of the following: rare earth doped garnets, rare earth doped alkaline earth sulfides, rare earth doped thiogallates, rare earth doped aluminates, rare earth doped orthosilicates, rare earth doped chlorosilicates, rare earth doped alkaline earth metal nitrides, rare earth doped oxynitrides and rare earth doped aluminum oxynitrides, rare earth doped silicon nitrides, metals rare earth endowed sialone.
  • Particularly suitable phosphors are garnets, aluminates, nitrides and mixtures of at least two of these phosphors. For example, particles of the following phosphors can be used: (Y, Lu) 3 (Al, Ga) 8 O 12 : Ce 3+ , CaAlSiN 3 : Eu 2+ , (Ba, Sr) 2 Si 5 N 8 : Eu 2+ ,
  • Furthermore, it is possible that the phosphor is a so-called nano-phosphor in which particles of the phosphor can have diameters between, for example, at least 1 nm and at most 100 nm. Nano-phosphors are for example in the document US 2009/0173957 described, which is hereby expressly incorporated by reference.
  • Further, it is possible that the phosphor is formed with quantum dots. Suitable materials here are, for example, PbS or CdS. In particular, the quantum dots may be based on III-V or II-VI compound semiconductor materials. Specifically, an II-VI compound semiconductor material has at least one element of the second main group such as Be, Mg, Ca, Sr, and a sixth main group element such as O, S, Se. In particular, an II-VI compound semiconductor material comprises a binary, ternary or quaternary compound comprising at least one element from the second main group and at least one element from the sixth main group. Such a binary, ternary or quaternary compound may additionally have, for example, one or more dopants and additional constituents. For example, the II / VI compound semiconductor materials include: ZnO, ZnMgO, CdS, ZnCdS, MgBeO.
  • The phosphor is particularly suitable for so-called downward conversion. That is, primary radiation from a first wavelength range is absorbed by the phosphor and secondary radiation from a second wavelength range is emitted by the phosphor, wherein the second wavelength range comprises wavelengths that are greater than the first wavelength range.
  • The particles of the first phosphor are electrically charged. That is, the particles of the first phosphor carry, for example, a surface charge that can be generated during the production of the phosphor or is produced by post-treatment of the phosphor. For example, the charge can be generated by treating the particles with an acid.
  • In accordance with at least one embodiment of the method, the electrically charged particles of the first light-emitting diode chip are introduced into the cladding material. For this purpose, the electrically charged particles of the phosphor can be scattered, for example, onto the wrapping material. In addition, it is possible that the electrically charged particles of the first phosphor are mechanically mixed with the wrapping material.
  • In accordance with at least one embodiment of the method, the light-emitting diode chip is enveloped by the cladding material. For example, the LED chip can be encapsulated or encapsulated with the wrapping material. The introduction of the electrically charged particles of the first phosphor in the wrapping material can be done before wrapping or after wrapping the LED chip with the wrapping material.
  • In accordance with at least one embodiment of the method, at least part of the electrically charged particles of the first phosphor are applied to at least part of the outer surface of the light-emitting diode chip by sedimentation of the particles in the covering material. That is, the LED chip is arranged downstream relative to at least a portion of the particles of the first phosphor in the gravitational direction, so that due to the gravitational force acting on the particles, a sinking of the particles, ie a sedimentation of the particles, in the direction of at least part of the outer surface of the LED chip takes place , The outer surface of the LED chip is the surface that limits the LED chip to the outside. During operation of the light-emitting diode chip, at least part of the electromagnetic radiation generated in the light-emitting diode chip exits through at least part of the outer surface. At least part of the particles of the first phosphor is applied to this part of the outer surface of the LED chip.
  • The particles of the first phosphor are chosen such that they absorb at least part of the electromagnetic radiation generated by the LED chip during operation of the LED chip. Subsequently, the particles emit electromagnetic radiation from another wavelength range.
  • The sedimentation of the electrically charged particles of the first phosphor occurs under the influence of an electric force on the electrically charged particles of the first phosphor. The force is preferably directed at least partially in the direction of the outer surface of the LED chip. That is, the electrically charged particles of the first phosphor sink in the wrapping material in the direction of the light emitting diode chip not only due to their weight, but the sedimentation is promoted by the influence of an electric force on the electrically charged particles of the first phosphor. Overall, the sedimentation is thus accelerated, for example, by an electrostatic attraction between the particles of the phosphor and the outer surface of the LED chip. The power is used specifically targeted. That is, measures are taken to have an electrical force that aids sedimentation act on the particles of the phosphor. The Force acts in a preferred direction, for example in the direction of the outer surface of the LED chip.
  • In accordance with at least one embodiment of the method, the method for producing a light-emitting diode comprises the following steps:
    • Providing a light-emitting diode chip,
    • Providing a wrapping material for the LED chip,
    • Providing electrically charged particles of a first phosphor,
    • Introducing the electrically charged particles of the first phosphor into the wrapping material,
    • Wrapping the LED chip with the wrapping material,
    • Applying at least a portion of the electrically charged particles of the first phosphor to at least a portion of an outer surface of the LED chip by sedimentation of the particles in the cladding material, wherein
    • - The sedimentation takes place under the influence of an electric force on the electrically charged particles of the first phosphor.
  • The LED chip is enveloped in such a way with the wrapping material, that the exposed outer surface of the LED chip, so for example, the part of the outer surface, which is not covered by the connection carrier on which the LED chip is applied, cohesively covers the LED chip. The wrapping material is then, for example, in direct contact with the outer surface of the LED chip and follows the shape of the outer surface of the LED chip after.
  • A light-emitting diode produced by means of the method described here is suitable, for example, for producing white light. For this purpose, the light-emitting diode chip generates blue light during operation, for example. At least part of this blue light is converted into light of a different color by means of the particles of the first phosphor. The LED then emits in operation mixed light, which may be white light.
  • In the method described herein, the particles of the phosphor preferably have a density which is greater than the density of the coating material. Due to their weight force, the particles of the phosphor sink in the direction of the LED chip. Without an additional electric force, there may be an uneven distribution of the particles around the LED chip. For example, edges of the LED chip may be small compared to the diameters of the particles. This results in the particles sinking at the edge during descent without the influence of an electric force striking directly on an edge of the light-emitting diode chip, and the light-emitting diode chip therefore not being covered with a uniformly thick layer of particles of the phosphor. This may result in the light-emitting diode thus produced to an uneven color image of the light emitted during operation. For example, the light-emitting diode then emits visible blue light (so-called "blue piping") at certain angles. This may prove to be particularly disadvantageous in the case of light-emitting diode chips which comprise an electrically insulating carrier such as, for example, a sapphire or undoped silicon growth substrate. Furthermore, in the case of complex geometries of the light-emitting diode chip, if the light-emitting diode chip has, for example, undercuts, it may be disadvantageous that regions of the light-emitting diode chip which are shielded by the undercut are not covered with sedimented particles of the phosphor. Furthermore, a sinking of the particles without the assistance of an electric force leads to a slow process, which is less economical.
  • In the method described here, the sedimentation of the particles of the first phosphor is accelerated by the electric force. This increases the economy of the process.
  • After the completion of the sedimentation under the influence of an electric force on the electrically charged particles of the first phosphor, curing of the coating material can take place, for example, by means of UV radiation and / or heating.
  • In accordance with at least one embodiment of the method, at least part of the outer surface of the light-emitting diode chip is electrically charged before being enveloped by the cladding material, wherein the charge is electrically unlike the charge of the electrically charged particles of the first phosphor. That is, when the particles are negatively charged, for example, at least a part of the outer surface of the LED chip becomes electrically positively charged. For this purpose, the outer surface of the light-emitting diode chip preferably comprises an electrically insulating material that can be charged electrically.
  • The electrically insulating material may be, for example, a carrier of the light-emitting diode chip and / or a passivation layer of the light-emitting diode chip. The passivation layer may be formed, for example, with silicon nitride and / or silicon dioxide. The carrier is preferably a carrier for the semiconductor layers of the LED chip. The semiconductor layers may be epitaxially deposited on the carrier. The carrier is then a growth substrate for the semiconductor layers of the LED chip. Furthermore it is possible that the growth substrate is removed from the semiconductor layers of the LED chip and the carrier is different from the growth substrate of the LED chip. If the support is a growth substrate, the support may be formed, for example, with one of the following materials or may be made of one of the following materials: sapphire, SiC.
  • For example, a carrier other than the growth substrate may be formed with a plastic material.
  • Further, it is possible that the support other than a growth substrate is formed with a ceramic material such as Al 2 O 3 or AlN.
  • Due to the fact that at least a part of the outer surface of the light-emitting diode chip is electrically charged, this part of the outer surface of the light-emitting diode chip attracts the particles of the phosphor that are charged with different energy. In this way, it is possible that even complicated outer surfaces formed, for example, have an undercut coated with the particles of the phosphor, in particular evenly coated, are. In this case, it is even possible that a part of the particles of the phosphor moves against its weight in the direction of the electrically charged outer surface of the LED chip. Thus, undercuts, which are shielded in the direction of gravity of a part of the outer surface of the LED chip, be coated with electrically charged particles of the phosphor.
  • In accordance with at least one embodiment of the method, the light-emitting diode chip with the cladding material is arranged in an electric field, from which the electrical force results from the interaction of the electrical charge of the electrically charged particles of the first phosphor and the electric field, wherein the electrical force is at least for some of the electrical charged particles of the first phosphor has a component in the direction of the LED chip. In other words, the sedimentation of the phosphors takes place in an external electric field, which can be generated, for example, by two capacitor plates. The light-emitting diode chip already enveloped by the cladding material is placed, for example, between the two capacitor plates. The electric field is chosen such that an electrical force is exerted on the electrically charged particles of the phosphor which, for example, point in the same direction as the weight acting on the particles of the phosphor. In this case, it is additionally possible for at least part of the outer surface of the light-emitting diode chip to be electrically charged before being enveloped by the wrapping material, the charge being electrically unlike the charge of the electrically charged particles of the first phosphor. That is, in addition to the electrical force imparted by the electric field to the particles of the phosphor, there may be an electrostatic attraction between the particles of the phosphor and the electrically charged outer surface of the LED chip. In this way, a particularly rapid sedimentation of the electrically charged particles of the phosphor is possible.
  • In accordance with at least one embodiment of the method, the electrical force is adjustable. The setting of the electric force can be done, for example, by adjusting the voltage applied to the capacitor plates which generate the electric field. Further, the force can be changed by changing the distance of the plates. Overall, the electrical force is proportional to the size of the charge of the particles, to the voltage and inversely proportional to the distance of the plates.
  • According to at least one embodiment of the method, in addition to the electrically charged particles of the first phosphor, electrically charged particles of a second phosphor are provided and introduced into the cladding material. Here, the electrically charged particles of the second phosphor can carry at least on average a charge of different size as the electrically charged particles of the first phosphor. The electrically charged particles of the second phosphor are charged with the same name to the particles of the first phosphor. For example, the particles of the second phosphor are on average more charged, that is they carry a larger charge than the particles of the first phosphor. For example, both the particles of the first phosphor and the particles of the second phosphor are negatively charged. That is, the electric force acting on the particles of the second phosphor is, for example, greater than the electric force acting on the particles of the first phosphor. Moreover, it is possible for particles of further phosphors to be introduced into the cladding material, which carry the same or different charges as the particles of the first and / or the particles of the second phosphor.
  • According to at least one embodiment of the method, a selection of the electrically charged particles of the first and the second phosphor is carried out by means of the electric field. Due to the different size of the charge carried by the two types of luminescent material, sedimentation is faster for one luminescent species, with the higher charge, than for the other Fluorescent type. In this way, it is possible, for example, to bring about a layer structure of the different phosphors. For example, the more highly charged phosphors can form a first layer on the outer surface of the LED chip, which largely, ie more than 50%, comprises these phosphor particles. On this first layer, a second layer of phosphors can be applied, which for the most part, ie more than 50%, comprises the weaker-charged particles. Despite common sedimentation in the same coating mass, a layer structure with the particles of the phosphors can thus be produced in this way, wherein electrically charged particles of the first and second phosphors are deposited in mutually different layers on the outer surface of the LED chip.
  • The charge of the phosphors, in particular the surface charge of the phosphors, can be adjusted by treating the phosphors with acid or similar methods. In addition, the surface charge of the particles of the phosphors may be affected by the cladding material or electrolytic additives to the cladding material. Different phosphors can be influenced in different ways.
  • In the following, the method described here for producing a light-emitting diode will be explained in more detail on the basis of exemplary embodiments and the associated figures.
  • The 1A . 1B . 2 and 3 show schematic sectional views, based on which the method described here is explained in more detail.
  • The same, similar or equivalent elements are provided in the figures with the same reference numerals. The figures and the proportions of the elements shown in the figures with each other are not to be considered to scale. Rather, individual elements may be exaggerated in size for better representability and / or better intelligibility.
  • In conjunction with the 1A a first embodiment of a method described here is explained in more detail. In this embodiment, a light emitting diode chip 1 on a connection carrier 91 by means of a connecting material 6 applied. The LED chip 1 is at least mechanically on the connection carrier 91 attached. At the connection carrier 91 it may be, for example, a printed circuit board or a lead frame on which the LED chip 1 by means of the connecting material 6 can also be connected electrically conductive. In addition, it is possible that it is the connection carrier 91 is a temporary subcarrier, where the LED chip 1 only temporarily applied for further processing.
  • In the present case is the LED chip 1 in a cavity 92 arranged as a container for a wrapping material 2 as well as for the LED chip 1 serves. At the cavity 92 it may be a housing cavity in which the LED chip remains arranged even after completion of the process. In addition, it is possible that the cavity 92 is formed by a temporary shape, which is removed after completion of the light-emitting diode, ie after completion of the method.
  • In the embodiment of 1 includes the LED chip 1 a carrier 11 , The carrier 11 is formed with an electrically insulating material. In the present case, it is the carrier 11 around a growth substrate, which consists for example of sapphire or SiC. On the carrier 11 are the semiconductor layers 12 deposited, in this case epitaxially deposited. The semiconductor layers 12 For example, they include an active region in which, during operation of the LED chip 1 electromagnetic radiation is generated for example in the UV range or in the range of blue light.
  • The LED chip 1 is in the cavity 92 from the wrapping material 2 cohesively wrapped. In the wrapping material 2 For example, it is a low viscosity silicone.
  • For the method, the LED chip 1 on its outer surface 1a , in the present case in the region of the electrically insulating support 11 , positively charged electrically. This charging takes place, for example, before introducing the wrapping material into the cavity 92 ,
  • Into the wrapping material 2 are electrically charged particles 31 a first phosphor mixed. The electrically charged particles 31 carry a non-identical charge to the charge on the outer surface 1a of the LED chip 1 , Because of this unlike charge acts an electric force 4 from the electrically charged particles 31 in the direction of the LED chip 1 , in particular in the direction of the carrier 11 , The sedimentation of the electrically charged particles 31 of the first phosphor is thus by the electric force 4 supported. Overall, a particularly uniform coating of the LED chip with the particles of the phosphor can be carried out in this way. In particular, at edges of the LED chip, a coating is carried out with the phosphor material.
  • In contrast to the embodiment of 1A instructs the wearer 11 in the embodiment of the 1B an undercut 1b , Due to the electric force 4 follows also in the area of this undercut a coating with electrically charged particles 31 of the first phosphor as the force 4 there the weight 7 on the particles 31 counteracts.
  • In conjunction with the schematic sectional view of 2 is a further embodiment of a method described here explained in more detail. In this embodiment, the LED chip is 1 in an electric field 5 arranged. The electric field 5 is through two capacitor plates 9a . 9b generated between which an electrical voltage is applied. Due to the electric field 5 an electric force acts 4 on the charged particles 31 of the first phosphor. The power 4 has a component in the direction of the weight 7 and thus supports the sedimentation of the phosphor 31 in the wrapping material 2 , The buoyancy 8th acts contrary to the sedimentation, but in the present case by the weight 7 and the electric force 4 overcompensated.
  • In the 2 is the LED chip 1 without electrically insulating carrier 11 shown. However, such a carrier may be present and as in connection with the 1A and 1B described unlike the electrically charged particles 31 be charged.
  • In conjunction with the schematic sectional view of 3 is a further embodiment of a method described here explained in more detail. In contrast to the embodiment of 2 are in the embodiment of 3 introduced into the wrapping material two different types of phosphor particles. Into the wrapping material 2 are electrically charged particles 31 of the first phosphor and electrically charged particles 32 a second phosphor other than the first phosphor. In the present case carry the electrically charged particles 32 of the second phosphor has a larger electric charge than the electrically charged particles 31 of the first phosphor. This is the electrical force 42 on the particles 32 of the second phosphor larger than the electric force 41 on the particles 31 of the first phosphor. The particles 42 can therefore be faster in the direction of the LED chip 1 descend, leaving first a layer of particles 32 of the second phosphor mainly comprising these phosphor particles. This layer then becomes a layer 31 with particles of the first phosphor applied, which are mainly particles of the first phosphor 31 includes. With the aid of the method described here, it is thus possible during the sedimentation of the phosphors to select the individual different types of phosphor into different layers.
  • The invention is not limited by the description based on the embodiments of these. Rather, the invention encompasses any novel feature as well as any combination of features, including in particular any combination of features in the claims, even if this feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments.
  • QUOTES INCLUDE IN THE DESCRIPTION
  • This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.
  • Cited patent literature
    • US 2009/0173957 [0012]

Claims (10)

  1. Method for producing a light-emitting diode comprising the following steps: - providing a light-emitting diode chip ( 1 ), - providing a wrapping material ( 2 ) for the LED chip ( 1 ), - providing electrically charged particles ( 31 ) of a first phosphor, - introduction of the electrically charged particles ( 31 ) of the first phosphor into the wrapping material ( 2 ), - wrapping the LED chip ( 1 ) with the wrapping material ( 2 ), - applying at least a portion of the electrically charged particles ( 31 ) of the first phosphor on at least a part of an outer surface ( 1a ) of the LED chip ( 1 ) by sedimentation of the particles ( 31 ) in the wrapping material ( 2 ), whereby - the sedimentation under the influence of an electric force ( 4 ) on the electrically charged particles ( 31 ) of the first phosphor.
  2. Method according to the preceding claim, wherein at least a part of the outer surface ( 1a ) of the LED chip ( 1 ) before wrapping with the wrapping material ( 2 ) is electrically charged, wherein the charge is electrically unlike the charge of the electrically charged particles ( 31 ) of the first phosphor.
  3. Method according to the preceding claim, wherein the electrically charged part of the outer surface ( 1a ) of the LED chip ( 1 ) is formed with an electrically insulating material.
  4. Method according to the preceding claim, wherein the electrically insulating material is a carrier ( 11 ) for semiconductor layers ( 12 ) of the LED chip ( 1 ).
  5. The method of claim 3 or 4, wherein the electrically insulating material is a plastic material.
  6. Method according to one of the preceding claims, wherein the light-emitting diode chip ( 1 ) with the wrapping material ( 2 ) in an electric field ( 5 ) is arranged so that the electrical force ( 4 ) from the interaction of the electric charge of the electrically charged particles ( 31 ) of the first phosphor and the electric field ( 5 ), the electrical force ( 4 ) at least for some of the electrically charged particles ( 31 ) of the first phosphor a component in the direction of the LED chip ( 1 ) having.
  7. Method according to the preceding claim, wherein the electrical force ( 4 ) is adjustable.
  8. Method according to one of the preceding claims, wherein electrically charged particles ( 32 ) of a second phosphor and into the wrapping material ( 2 ), the electrically charged particles ( 32 ) of the second phosphor and the electrically charged particles ( 31 ) of the first phosphor are charged with the same name and carry at least on average different sized charges.
  9. Method according to the preceding claim, wherein by means of the electric field ( 5 ) a selection of the electrically charged particles ( 31 . 32 ) of the first and second phosphors.
  10. Method according to the preceding claim, wherein electrically charged particles ( 31 . 32 ) of the first and the second phosphor in mutually different layers on the outer surface ( 1a ) of the LED chip ( 1 ) are deposited.
DE102011056813A 2011-12-21 2011-12-21 Method for producing a light-emitting diode Withdrawn DE102011056813A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE102011056813A DE102011056813A1 (en) 2011-12-21 2011-12-21 Method for producing a light-emitting diode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011056813A DE102011056813A1 (en) 2011-12-21 2011-12-21 Method for producing a light-emitting diode
PCT/EP2012/076448 WO2013092894A1 (en) 2011-12-21 2012-12-20 Method for producing a light-emitting diode

Publications (1)

Publication Number Publication Date
DE102011056813A1 true DE102011056813A1 (en) 2013-06-27

Family

ID=47522553

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011056813A Withdrawn DE102011056813A1 (en) 2011-12-21 2011-12-21 Method for producing a light-emitting diode

Country Status (2)

Country Link
DE (1) DE102011056813A1 (en)
WO (1) WO2013092894A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015214360A1 (en) * 2015-04-29 2016-11-03 Tridonic Jennersdorf Gmbh Method for producing an LED module
DE102016206927A1 (en) * 2016-04-25 2017-10-26 Tridonic Jennersdorf Gmbh Method for producing an LED module

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100665368B1 (en) * 2006-02-07 2007-01-09 삼성전기주식회사 Formation method of phosphor film and fabrication method of light emitting diode package using the same
US20080135862A1 (en) * 2001-09-03 2008-06-12 Matsushita Electric Industrial Co., Ltd. Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device
US20090173957A1 (en) 2005-06-23 2009-07-09 Osram Opto Semiconductors Gmbh Wavelength-converting converter material, light-emitting optical component, and method for the production thereof
DE10340004B4 (en) * 2002-10-22 2009-07-16 Avago Technologies General Ip (Singapore) Pte. Ltd. Electrophoresis processes for the selective application of materials to a semiconductor device
WO2010132219A1 (en) * 2009-05-15 2010-11-18 Peiching Ling Methods and apparatus for forming uniform layers of phosphor material on an led encapsulation structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4961827B2 (en) * 2006-05-11 2012-06-27 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
US8080828B2 (en) * 2006-06-09 2011-12-20 Philips Lumileds Lighting Company, Llc Low profile side emitting LED with window layer and phosphor layer
JP4835333B2 (en) * 2006-09-05 2011-12-14 日亜化学工業株式会社 Method for forming light emitting device
KR100973238B1 (en) * 2008-03-26 2010-07-30 서울반도체 주식회사 Phosphor coating method and apparatus and led comprising phosphor coating layer
EP2409340B1 (en) * 2009-03-19 2019-06-12 Signify Holding B.V. Color adjusting arrangements and illumination device with the same
US20110220920A1 (en) * 2010-03-09 2011-09-15 Brian Thomas Collins Methods of forming warm white light emitting devices having high color rendering index values and related light emitting devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080135862A1 (en) * 2001-09-03 2008-06-12 Matsushita Electric Industrial Co., Ltd. Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device
DE10340004B4 (en) * 2002-10-22 2009-07-16 Avago Technologies General Ip (Singapore) Pte. Ltd. Electrophoresis processes for the selective application of materials to a semiconductor device
US20090173957A1 (en) 2005-06-23 2009-07-09 Osram Opto Semiconductors Gmbh Wavelength-converting converter material, light-emitting optical component, and method for the production thereof
KR100665368B1 (en) * 2006-02-07 2007-01-09 삼성전기주식회사 Formation method of phosphor film and fabrication method of light emitting diode package using the same
WO2010132219A1 (en) * 2009-05-15 2010-11-18 Peiching Ling Methods and apparatus for forming uniform layers of phosphor material on an led encapsulation structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015214360A1 (en) * 2015-04-29 2016-11-03 Tridonic Jennersdorf Gmbh Method for producing an LED module
WO2016172753A1 (en) * 2015-04-29 2016-11-03 Tridonic Jennersdorf Gmbh Method for producing an led module
DE102016206927A1 (en) * 2016-04-25 2017-10-26 Tridonic Jennersdorf Gmbh Method for producing an LED module

Also Published As

Publication number Publication date
WO2013092894A1 (en) 2013-06-27

Similar Documents

Publication Publication Date Title
US8450147B2 (en) Laminating encapsulant film containing phosphor over LEDs
US8237178B2 (en) Light-emitting device
EP2113949B1 (en) Encapsulation for phosphor-converted white light emitting diode
EP1605526B1 (en) Semiconductor light emitting device with pre-fabricated wavelenght converting element
KR101647527B1 (en) Phosphor-coated light extraction structures for phosphor-converted light emitting devices
US8735920B2 (en) Light emitting diode package with optical element
US7329907B2 (en) Phosphor-converted LED devices having improved light distribution uniformity
US7943952B2 (en) Method of uniform phosphor chip coating and LED package fabricated using method
JP5759790B2 (en) Manufacturing method of semiconductor light emitting device
US8329482B2 (en) White-emitting LED chips and method for making same
US8878219B2 (en) Flip-chip phosphor coating method and devices fabricated utilizing method
TWI407581B (en) Color converted light emitting diode
TWI508329B (en) Semiconductor light emitting device and method for manufacturing same
KR20100135310A (en) Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the same
JP2006294821A (en) Light emitting device excellent in heat resistance and light resistance
KR20130110101A (en) Inorganic shaped body for converting wavelength and method for manufacturing the same, and light emitting device
EP2162927B1 (en) Method for producing optoelectronic components
KR20120117660A (en) Reflecting resin sheet, light emitting diode device and producing method thereof
KR101101135B1 (en) Light Emitting Diode Package Using Liquid Crystal Polymer
JP2006229054A (en) Light-emitting device
US8227269B2 (en) Manufacture of light emitting devices with phosphor wavelength conversion
US8866185B2 (en) White light LED with multiple encapsulation layers
US20110068356A1 (en) Method of manufacturing light emitting diode packaging lens and light emmiting diode package
US8796712B2 (en) Phosphor layer and light-emitting device
DE102005041064A1 (en) Surface-mounted optoelectronic component has semiconductor chip with a molded body shaped on the chip

Legal Events

Date Code Title Description
R163 Identified publications notified
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee