JP4524607B2 - Improved silicate phosphor and LED lamp using the same - Google Patents

Improved silicate phosphor and LED lamp using the same Download PDF

Info

Publication number
JP4524607B2
JP4524607B2 JP2004310954A JP2004310954A JP4524607B2 JP 4524607 B2 JP4524607 B2 JP 4524607B2 JP 2004310954 A JP2004310954 A JP 2004310954A JP 2004310954 A JP2004310954 A JP 2004310954A JP 4524607 B2 JP4524607 B2 JP 4524607B2
Authority
JP
Japan
Prior art keywords
light
kihotaru
led element
before
sealing resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2004310954A
Other languages
Japanese (ja)
Other versions
JP2006124422A5 (en
JP2006124422A (en
Inventor
テウス ヴァルター
ロット グンドゥラ
テウス ステファン
寿夫 山口
孝義 矢嶋
真 石田
敦 都築
Original Assignee
メルク パテント ゲーエムベーハー
豊田合成株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by メルク パテント ゲーエムベーハー, 豊田合成株式会社 filed Critical メルク パテント ゲーエムベーハー
Priority to JP2004310954A priority Critical patent/JP4524607B2/en
Publication of JP2006124422A publication Critical patent/JP2006124422A/en
Publication of JP2006124422A5 publication Critical patent/JP2006124422A5/ja
Application granted granted Critical
Publication of JP4524607B2 publication Critical patent/JP4524607B2/en
Application status is Active legal-status Critical
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals comprising europium
    • C09K11/7735Germanates
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials

Description

  The present invention relates to a silicate phosphor exhibiting improved light emission intensity, improved excitation characteristics and improved surface characteristics, and an LED lamp using the phosphor, which is used in a high-luminance light emitting device having high color rendering properties. About.

  Phosphors that emit blue-green light, yellow-green light to orange light under excitation in the ultraviolet or blue light region of the optical spectrum have gained in importance over the last few years. This is because these phosphors are used in white light emitting devices. In particular, cerium-activated granate-phosphors (Patent Document 1, Patent Document 2, Patent Document 3, Patent Document 4 and Patent Document 5) are used for various applications, but are caused by lack of regions in the optical spectrum. Low color rendering properties are not suitable for general lighting applications. Furthermore, YAG: Ce is excited only by blue light, and its use is limited to applications using excitation by a blue semiconductor chip. Therefore, the main blue light emitting semiconductor chip has increased color rendering properties in combination with a plurality of light emitters (Patent Documents 6 and 7). In addition to YAG: Ce, a chlorosilicate phosphor for high CRI (Patent Document 8) is used, but its emission intensity is only 10% with respect to YAG: Ce. Furthermore, although a white light emitting device can be realized by an organic light emitter, it is also known that its efficiency is poor due to its low stability, and its application is limited.

  Furthermore, some inorganic sulfide phosphors (for example, SrS: Eu) having poor long-term stability are also used (Patent Document 9 and Patent Document 10).

  In order to achieve high CRI in the light emitting device, the main ultraviolet light emitting device (300 to 370 nm) is used in combination with a plurality of phosphors that emit red, green and blue regions (RGB components) of the optical spectrum. (Patent Literature 11, Patent Literature 12 and Patent Literature 13).

Within the last few years, several patents and publications using silicate phosphors for white LEDs have emerged (Patent Document 14, Patent Document 15 and Patent Document 16). It is well known that these are used in gas discharge lamps (Non-Patent Document 1). Furthermore, this publication of Non-Patent Document 2 describes that a uniform solid solution of (Ca, Sr, Ba) 2 SiO 4 : Eu lattice was examined systematically. LED silicate phosphors, in themselves or in the form of mixtures, have a higher CRI compared to the YAG: Ce system in combination with a blue or ultraviolet LED-die. All patents and literature relating to silicate phosphors show low efficiency and brightness compared to YAG: Ce systems.

In addition, a number of high barium-containing phosphors have been described that have usage problems with respect to water sensitivity. These drawbacks reduce the efficiency of the silicate phosphor.
WO98 / 12757 WO0252615 US Pat. No. 5,998,925 European Patent No. 1271,664 European Patent No. 862794 WO00 / 33389 WO00 / 33390 WO01 / 93341 European Patent No. 1150361 US Pat. No. 5,598,059 WO9839805 WO9839807 WO 9748138 WO02 / 11214 WO02 / 054502 US Pat. No. 6,255,670 K. H. Butler "Fluorescent Lamp Phosphors", Pennsylvania Univ. Press 1980 T. T. L. Barry J.M. Electrochem. Soc. , 1968, 1181

   Accordingly, an object of the present invention is to provide a silicate phosphor having improved excitability, and an LED lamp using the same.

  A further object of the present invention is to provide a silicate phosphor having improved emission intensity and an LED lamp using the same.

  A further object of the present invention is to provide an improved silicate phosphor with reduced water sensitivity, and an LED lamp using the same.

  It is a further object of the present invention to provide improved silicate phosphors with increased efficiency and LED lamps using the same.

According to the present invention, including barium (Ca, Sr, Ba) 2 SiO 4: suspending and calcining the Eu phosphor, a step of pulverizing the pre Kihotaru light body, ethanol pre Kihotaru light body is allowed, the manufacturing method of the ultrasonic irradiating before Kihotaru the light beam, before the step of drying the Kihotaru light body, a comprises silicate-based phosphor are provided.

According to the present invention, before Kihotaru the light, before and dried after removal of the ethanol may be those treated with water / ethanol is performed.

According to the present invention, before Kihotaru light body, nitrogen, may be those dried in an inert gas atmosphere such as argon.

According to the present invention, before Kihotaru light body it may be capable excited by radiation of 250 to 500 nm.

According to the present invention, before Kihotaru the light may be those used for the light emitting device alone or more.

According to the present invention, before Kihotaru the light may be those to be used as a light-emitting layer the LED.

According to the present invention, before Kihotaru the light may be those particle sizes of 20 to 30 [mu] m.

According to the present invention includes a LED element that emits ultraviolet or blue illumination light, and a light transparent sealing resin for sealing the LED element, wherein the sealing resin includes a pre Kihotaru light body And the LED lamp excited by the light of the said LED element is provided.

According to the present invention, the sealing resin, the second sealing layer containing a first sealing resin and is laminated on the first sealing on the resin before Kihotaru light body for sealing said LED element You may comprise so that resin may be included.

According to the present invention, before Kihotaru the light may be configured as being mixed with the LED element mounted on a lead frame to the sealing resin for sealing.

According to the present invention, before Kihotaru light body may constitute the LED element mounted on an inorganic material substrate as is mixed into the sealing resin for sealing.

According to the present invention, an LED element that emits ultraviolet or blue irradiation light, a support on which the LED element is mounted, and a light-transmitting sealing resin that seals the LED element are provided. , the sealing resin comprises a front Kihotaru light body, and, LED lamp that is excited by light of the LED element is provided.

According to the present invention, the support has a first lead and a second lead for supplying power to the LED element, the first lead has a recess at one end, and the LED element has the light You may comprise so that it may arrange | position in the said recessed part so that it may seal with transparent sealing resin.

According to the present invention, the support includes an insulating substrate having a wiring pattern for supplying power to the LED element, and the LED element is sealed with the light-transmitting sealing resin. It may be configured to be mounted on the insulating substrate.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.
Improved phosphor surface and crystal structure are required to further increase the transmission of radiation from the excitation light source to a single phosphor crystal and the transmittance of the converted light from the single phosphor crystal It is. This is accomplished by subjecting the pre-crushed crude phosphor that still contains trace amounts of flux and secondary phase (eg, alkaline earth chloride) to several specialized processing steps. As a result of the study by the present inventors, a special method for handling water-sensitive silicate phosphors, and a special method for improving all the silicate phosphors and increasing the quantum yield and brightness in the light emitting device. developed.

  This improvement is made possible by avoiding excess water when subjecting the water sensitive system to the process. In particular, barium-rich compositions are greatly affected by the reduction in brightness and surface quality caused by water. This occurs when the phosphor crystal is hydrolyzed to alkaline earth hydroxide and silicic acid. When a non-aqueous solvent such as ethanol is used as a solvent containing a simple organic hydroxyl group, no hydrolysis is observed. Even with ethanol, the trace amount of flux remaining at the end can be dissolved to suspend the alkaline earth hydroxide and oxide. When the wet grinding process is carried out in ethanol instead of water, no hydrolysis is observed. The water-sensitive phosphor is stable and becomes more stable when subjected to a partially aqueous treatment process. This is presumably due to the formation of a complex between the metal atom and the solvent. The hydrophobic tail appears to protect the crystal surface from water molecules. For example, aldehydes such as methanol, propanol or iso-propanol, acetone, methyl-ethyl-ketone, butyraldehyde, nitriles such as acetonitrile, amides, esters, or organic polyhydroxy compounds such as ethylene glycol or glycerol The organic solvent can be used.

  Another improvement can be realized by carrying out the wet sieving process in non-aqueous organic solvents or their aqueous mixtures. The suspended phosphor is placed on a sieve and a solvent stream is passed through the sieve while applying various vibrations to pass the phosphor crystal through the mesh. Compared with the dry sieving process, the particle size distribution does not show a large signal in the ultrafine region. This peak appears to be caused by the friction of phosphor particles during a long dry sieving process. By flowing a solvent in the wet sieving process, the phosphor particles pass through the sieving mesh.

  An SEM photograph of a silicate phosphor prepared by a usual method is shown in FIG. Not only some small particles but also a sharp outer angle is observed on the phosphor surface. After the operation of irradiating the phosphor crystal with ultrasonic waves in a non-aqueous solvent, decanting, and drying, the phosphor surface appears to have been cleaned by removing these impurities (Fig. 2). . From the excitation and emission spectra, it is clear that such a sample has been greatly improved (FIGS. 3 and 4).

By treating the already washed phosphor with a non-aqueous solvent such as acetone, methanol or ethanol after the filtration process to remove most of the water from the washing operation, the excitation and emission spectra are greatly improved. After this step, the phosphor sample is placed in a drying oven under air (in contact with CO 2 ) or preferably in an inert gas atmosphere such as argon or nitrogen (eg to avoid re-formation of alkaline earth carbonates). ), And dried at 30 to 350 ° C. for several hours. As a result, the water that is almost removed by the non-water treatment cannot react with the alkaline earth silicate and cannot react with the alkaline earth carbonate in a further step. Thereby, an improvement in emission spectrum and excitation spectrum is observed (FIGS. 5 and 6). The second point is that the partial pressure of the solvent or water in the atmosphere is reduced by the strong gas flow, and the drying process is accelerated. As a result, the time during which water contacts the phosphorus under heating is minimized.

  There is no second phase in the spectrum of all improved silicate-based phosphors and the lifetime under ultraviolet light excitation is increased. Also, all phosphor samples can be excited with blue light or ultraviolet light from a vacuum ultraviolet region from a mercury lamp or a blue or violet LED. The improved silicate phosphor has a greatly increased excitation capability in the region of 400 to 530 nm (FIGS. 4, 6, 7 and 8).

  The present invention will be described below in more detail with reference to examples, but the present invention is not limited to these examples.

  The stoichiometric amounts of the raw materials, that is, metal oxides of calcium, strontium and / or barium, europium oxide, silica, germanium dioxide, activator and flux are weighed and mixed uniformly. The obtained mixture was baked at 1100 to 1350 ° C. for 3 to 20 hours in a reducing atmosphere (hydrogen / nitrogen) depending on the phosphor composition. Depending on the ratio between the metal oxide and the dopant, the crude fluorescent material having a green to orange color was preliminarily crushed and sieved with a 500 μm sieve.

  FIG. 5 shows an emission spectrum, and FIG. 6 shows an excitation spectrum of a silicate phosphor improved by a treatment operation using a water-soluble non-aqueous solvent. The crude yellow silicate phosphor material is washed with water, the phosphor is sucked through a glass frit, exposed to acetone three times to remove most of the trace amount of water remaining in the phosphor cake, and then the phosphor Is dried at 130 ° C. under nitrogen in a drying oven. This greatly accelerates the drying process.

  FIG. 3 shows a graph of the emission spectrum, and FIG. 4 is a graph of the excitation spectrum of the silicate phosphor improved by using an ultrasonic beam in a non-aqueous solvent. The crude green silicate phosphor cake is pre-crushed with a jaw breaker. In order to further crush, the phosphor is suspended in ethanol with stirring and irradiated with an ultrasonic beam of 40 kHz for 20 minutes. Ethanol is removed, and the phosphor is washed twice with water / ethanol (v: v = 1: 1) to melt the last trace of flux. After drying at 130 ° C. for 6 hours in a drying furnace, as a result of particle size distribution and examination with a microscope, it can be seen that the size of the phosphor single crystal is smaller and the amount of finest particles in the phosphor is greatly reduced. Compared with a general treatment process using pure water (FIG. 1), it can be seen that the surface of the phosphor crystal is remarkably cleaned when examined by SEM (FIG. 2).

  FIG. 9 shows a graph of the emission spectrum, and FIG. 7 shows a graph of the excitation spectrum of the yellow-green silicate-based phosphor improved by applying a wet grinding process in an aqueous or pure organic solvent. The crude yellow-green silicate phosphor cake is pre-crushed with a jaw breaker. For further crushing, 1 kg of the phosphor is put in a drum containing 1 L of ethanol together with 1 kg of zirconia spheres. The drum is slowly rotated on a roller mill for 3 hours. The resulting suspension is placed in water for a washing process, aspirated, rinsed with ethanol to remove traces of water, and dried overnight at 130 ° C. in a drying oven. From the SEM photograph, it can be seen that there are only a few aggregates in the gently pulverized phosphor (see FIG. 10).

  FIG. 8 is a diagram showing excitation, and FIG. 11 is a wet sieving process using aqueous ethanol (95%) after the cleaning process, and then collecting the phosphor by suctioning, and the inert gas atmosphere ( 2 shows an emission spectrum of an orange silicate phosphor material obtained by drying at 130 ° C. for 5 hours under (Argon). This has the advantage that wet sieving is similar to another cleaning step and that the organic solvent removes trace amounts of water. Furthermore, wet sieving is significantly faster than the dry sieving process with a gauze strainer. In the dry process, the phosphor crystals are rubbed against each other and the amount of finest particles is significantly increased. The best method is to wet screen at the beginning of the cleaning process so that the combined benefits of non-aqueous solvents for the entire processing operation are obtained.

  In summary, it is clear that all improved silicate phosphors have significantly increased excitation characteristics in the excitation wavelength region of 400 to 550 nm. For known silicate systems, an efficiency of up to 50% occurs at an excitation wavelength of 464 nm. The essential results obtained are summarized in Table 1.

  Next, an LED lamp using the improved silicate phosphor according to the present invention will be described.

  FIG. 12 shows a first preferred embodiment LED lamp according to the present invention.

  The LED lamp 1B includes a face-up type LED element 2 that is formed of a GaN-based semiconductor compound and emits blue light (emission wavelength: about 460 nm). The copper alloy lead portion 3 </ b> A having the cup portion 30 is provided so that the LED element 2 is fixed to the bottom portion 31 of the cup portion 30. The lead part 3 </ b> A is electrically connected to the LED element 2 by a wire 4. The copper alloy lead 3 </ b> B is electrically connected to an electrode (not shown) of the LED element 2 by a wire 4. The cup portion 30 of the lead portion 3 </ b> A is sealed with the epoxy resin 5. The epoxy resin 5 contains a phosphor 51 that is excited by blue light emitted from the LED element 2. The lead portions 3A and 3B and the wire 4 are integrally sealed with a sealing resin 6 such as an epoxy resin. The sealing resin 6 has a hemispherical optical shape surface 6A.

  In the LED lamp 1B, the phosphor 51 is an improved yellow silicate phosphor having the characteristics shown in FIG. 5, and the blue light from the LED element 2 and the yellow light from the phosphor 51 are mixed to produce white light. Arise.

  FIG. 13 shows a second preferred embodiment LED lamp according to the present invention. The LED lamp 1B is a SMD (Surface Mount Device) type LED lamp, and includes a ceramic substrate 9 having wiring portions 3C and 3D patterned with tungsten (W). A main body 80 made of a sintered body of an inorganic material is formed integrally with the ceramic substrate 9 and has a recess. This concave portion has a side wall portion 80A having a shape expanded in the light emission direction. The LED element 2 is electrically connected to each part exposed at the bottom of the concave portion of the main body 80 in the wiring parts 3C and 3D through the Au bump 40. The LED element 2 is sealed with a silicone resin 90 containing a phosphor 51. The phosphor 51 is made of one or more phosphors selected from the silicate phosphors described above. On the other hand, the LED element 2 is an LED element that emits blue light and / or UV light.

  FIG. 14 is an LED lamp according to a third preferred embodiment of the present invention. This LED lamp 1B is shown in FIG. 13 except that a layered wavelength converting portion 53 is provided on the surface portion of the silicone resin 90 shown in FIG. 13 and that the phosphor 51 is contained in the wavelength converting portion 53. The configuration is the same as that of the LED lamp 1B shown.

  FIG. 15 shows an LED element 10 that can be used in the LED lamps shown in FIGS. The LED element 10 includes a sapphire substrate 101. The AlN buffer layer 102 and the n-type GaN cladding layer 103 are provided on the sapphire substrate 101 in this order. A multilayer 104 having a light emitting layer is provided on the n-type GaN cladding layer 103. A p-type AlGaN cladding layer 105 and a p-type GaN contact layer 106 are provided on the multilayer 104 in this order. A thin film electrode 107 made of Au is provided on the p-type GaN contact layer 106. A pad electrode 108 is connected to the thin film electrode 107. An n-side electrode 109 is connected to the n-type GaN clad layer 103. A protective film 110 is provided on the upper and side surfaces of the LED element 10 except for the pad electrode 108 and the n-side electrode 109. The AlN buffer layer 102, the n-type GaN cladding layer 103, the multilayer 104, the p-type AlGaN cladding layer 105, and the p-type GaN contact layer 106 constitute a GaN-based semiconductor layer 113. The GaN-based semiconductor layer 113 is formed by sequentially growing the above layers on the sapphire substrate 101.

  In the LED element 10, the light emitting layer in the multilayer 104 emits blue light and / or UV light. The wavelengths of these emitted lights are inversely proportional to the band gap energy of the light emitting layer semiconductor.

  While the invention has been described with reference to specific embodiments disclosed fully and clearly, the appended claims are not limited thereto but are within the scope of the basic teachings described herein. All modifications and variations apparent to those skilled in the art are possible.

It is a SEM photograph of the green silicate system fluorescent substance sample prepared by the usual process. It is the SEM photograph of the improved green silicate type | system | group fluorescent substance sample processed with the ultrasonic beam. 2 is a graph comparing two emission spectra, one of which is a normal green phosphor (1) and the other is an improved green silicate phosphor (2). 2 is a graph comparing two excitation spectra, one of which is a normal green phosphor (1) and the other is an improved green silicate phosphor (2). 2 is a graph comparing two emission spectra, one of which is a normal yellow phosphor (1) and the other is an improved yellow silicate phosphor (2). 2 is a graph comparing two excitation spectra, one of which is a normal yellow phosphor (1) and the other is an improved yellow silicate phosphor (2). 2 is a graph comparing two excitation spectra, one of which is a normal yellow-green phosphor (1) and the other is an improved yellow-green silicate phosphor (2). 2 is a graph comparing two excitation spectra, one of which is a normal orange phosphor (1) and the other is an improved orange silicate phosphor (2). 2 is a graph comparing two emission spectra, one of which is a normal yellow-green phosphor (1) and the other is an improved yellow-green silicate phosphor (2). It is a SEM photograph of a yellowish green silicate phosphor that has been gently wet crushed. 2 is a graph comparing two emission spectra, one of which is a normal orange phosphor (1) and the other is an improved orange silicate phosphor (2). 1 is a cross-sectional view showing an LED lamp according to a first preferred embodiment of the present invention. FIG. 3 is a sectional view showing an LED lamp according to a second preferred embodiment of the present invention. FIG. 6 is a cross-sectional view showing an LED lamp according to a third preferred embodiment of the present invention. It is sectional drawing which shows the LED element used for the LED lamp by one of the 1st-3rd preferable embodiment of this invention.

Explanation of symbols

1B: LED lamp 2: LED element 3A: lead part 3B: lead part 3C: wiring part 3D: wiring part 4: wire 5: epoxy resin 6: sealing resin 6A: optical shape surface 9: ceramic substrate 10: LED element 30 : Cup part 31: Bottom part 32: Side wall part 40: Au bump 51: Phosphor 53: Wavelength conversion part 80: Main body 80 A: Side wall part 90: Silicone resin 101: Sapphire substrate 102: AlN buffer layer 103: n-type GaN cladding layer 104: Multilayer 105: p-type AlGaN cladding layer 106: p-type GaN contact layer 107: thin film electrode 108: pad electrode

Claims (14)

  1. Firing a (Ca, Sr, Ba) 2 SiO 4 : Eu phosphor containing barium;
    A step of pulverizing the pre Kihotaru light body,
    Suspending the pre Kihotaru light body ethanol, irradiating an ultrasonic beam before Kihotaru the light,
    Method for producing a silicate-based phosphor comprising the steps of drying the pre Kihotaru light body, the.
  2. Before Kihotaru light body,
    After removal of the ethanol and before drying
    Method for producing a silicate-based phosphor according to claim 1 wherein treatment with a water / ethanol is performed.
  3. Before Kihotaru light body, method for manufacturing silicate-based phosphor according to claim 1 or 2 is dried in an inert gas atmosphere.
  4. Before Kihotaru light body, method for manufacturing silicate-based phosphor according to any one of claims 1 to 3 which can be excited by radiation of 250 to 500 nm.
  5. Before Kihotaru light body, method for manufacturing silicate-based phosphor according to any one of claims 1 to 4 used for the light emitting device alone or more.
  6. Before Kihotaru light body, method for manufacturing silicate-based phosphor according to any one of claims 1 to 5 which is used as the light emitting layer the LED.
  7. Before Kihotaru light body, method for manufacturing silicate-based phosphor according to any one of claims 1 to 6 particle sizes of 20 to 30 [mu] m.
  8. LED elements that emit ultraviolet or blue irradiation light;
    A light-transmitting sealing resin for sealing the LED element,
    The sealing resin contains a fluorescent body manufactured by the manufacturing method according to claim 1, and, LED lamp that is excited by light of the LED element.
  9. The sealing resin, claim including a first sealing resin for sealing said LED element and a second sealing resin layer containing Kihotaru light body before being laminated on the first sealing on the resin 8. The LED lamp according to 8 .
  10. Before Kihotaru the light, LED lamp according to claim 8, which is mixed with the LED element mounted on a lead frame to the sealing resin for sealing.
  11. Before Kihotaru the light, LED lamp according to the LED element mounted on an inorganic material substrate to Claim 8 that is mixed into the sealing resin for sealing.
  12. LED elements that emit ultraviolet or blue irradiation light;
    A support on which the LED element is mounted;
    A light-transmitting sealing resin for sealing the LED element,
    The sealing resin contains a fluorescent body manufactured by the manufacturing method according to claim 1 or 2, and, LED lamp that is excited by light of the LED element.
  13. The support has a first lead and a second lead for supplying power to the LED element,
    The first lead has a recess at one end,
    The LED lamp according to claim 12 , wherein the LED element is disposed in the recess so as to be sealed with the light-transmitting sealing resin.
  14. The support has an insulating substrate having a wiring pattern on the top for supplying electric power to the LED element,
    The LED lamp according to claim 12 , wherein the LED element is mounted on the insulating substrate so as to be sealed with the light-transmitting sealing resin.
JP2004310954A 2004-10-26 2004-10-26 Improved silicate phosphor and LED lamp using the same Active JP4524607B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004310954A JP4524607B2 (en) 2004-10-26 2004-10-26 Improved silicate phosphor and LED lamp using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004310954A JP4524607B2 (en) 2004-10-26 2004-10-26 Improved silicate phosphor and LED lamp using the same
DE200510051063 DE102005051063A1 (en) 2004-10-26 2005-10-25 Silicate group fluorescent material for LED lamp, is produced using specific fluorescent crystal, and exhibits high luminance by irradiation with ultraviolet or blue light, by removing water in wet preparation process during manufacture

Publications (3)

Publication Number Publication Date
JP2006124422A JP2006124422A (en) 2006-05-18
JP2006124422A5 JP2006124422A5 (en) 2006-05-18
JP4524607B2 true JP4524607B2 (en) 2010-08-18

Family

ID=36580331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004310954A Active JP4524607B2 (en) 2004-10-26 2004-10-26 Improved silicate phosphor and LED lamp using the same

Country Status (2)

Country Link
JP (1) JP4524607B2 (en)
DE (1) DE102005051063A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4923728B2 (en) * 2006-05-24 2012-04-25 三菱化学株式会社 Phosphor-containing composition, light emitting device, lighting device, and image display device
JP2008028042A (en) * 2006-07-19 2008-02-07 Toshiba Corp Light emitting device
DE102007020782A1 (en) 2006-09-27 2008-04-03 Osram Opto Semiconductors Gmbh Radiation emitting device comprises a radiation-emitting functional layer emitting primary radiation in blue region, radiation conversion material arranged in beam path of the functional layer, and radiation conversion luminescent material
DE102007016229A1 (en) 2007-04-04 2008-10-09 Litec Lll Gmbh Process for the production of phosphors based on orthosilicates for pcLEDs
DE102007016228A1 (en) 2007-04-04 2008-10-09 Litec Lll Gmbh Process for the production of phosphors based on orthosilicates for pcLEDs
JP5530128B2 (en) * 2009-07-31 2014-06-25 株式会社小糸製作所 Phosphor and light emitting device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10154466A (en) * 1996-09-30 1998-06-09 Toshiba Corp Plasma display panel and phosphor
JPH11135030A (en) * 1997-10-30 1999-05-21 Hitachi Ltd Color cathode-ray tube having high luminance fluorescent screen
JP2002501950A (en) * 1998-01-22 2002-01-22 松下電器産業株式会社 High brightness, a process for the preparation of small particles red-emitting phosphor
WO2003021691A1 (en) * 2001-09-03 2003-03-13 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting device
JP2004198177A (en) * 2002-12-17 2004-07-15 Konica Minolta Holdings Inc Radiation image conversion panel and method for manufacturing such panel and phosphors used for it
JP2005353888A (en) * 2004-06-11 2005-12-22 Stanley Electric Co Ltd Light emitting element

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10154466A (en) * 1996-09-30 1998-06-09 Toshiba Corp Plasma display panel and phosphor
JPH11135030A (en) * 1997-10-30 1999-05-21 Hitachi Ltd Color cathode-ray tube having high luminance fluorescent screen
JP2002501950A (en) * 1998-01-22 2002-01-22 松下電器産業株式会社 High brightness, a process for the preparation of small particles red-emitting phosphor
WO2003021691A1 (en) * 2001-09-03 2003-03-13 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting device
JP2004198177A (en) * 2002-12-17 2004-07-15 Konica Minolta Holdings Inc Radiation image conversion panel and method for manufacturing such panel and phosphors used for it
JP2005353888A (en) * 2004-06-11 2005-12-22 Stanley Electric Co Ltd Light emitting element

Also Published As

Publication number Publication date
DE102005051063A1 (en) 2006-06-29
JP2006124422A (en) 2006-05-18

Similar Documents

Publication Publication Date Title
CN100526421C (en) Phosphor, process for producing the same, lighting fixture and image display unit
ES2490603T3 (en) light emitting device
US8608980B2 (en) Phosphor, method for producing the same and light-emitting device using the same
US7951306B2 (en) Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
KR101115855B1 (en) Fluorescent substance and process for producing the same, and luminescent element using the same
EP2163595B1 (en) Fluorescent substance, method for producing the same and light/emitting device using the same
US7432642B2 (en) Semiconductor light emitting device provided with a light conversion element using a haloborate phosphor composition
US7910940B2 (en) Semiconductor light-emitting device
JP4953065B2 (en) Phosphor and production method thereof
US6936857B2 (en) White light LED device
JP2010031201A (en) Fluorescent substance and light emission device using the same
CN101600778B (en) Fluorescent substance and production method thereof, and light emitting device
JP3906224B2 (en) Luminescent substance and light emitting diode using this substance
KR101471883B1 (en) Alloy powder for aw material of inorganic functional material and phosphor
US7906790B2 (en) Full spectrum phosphor blends for white light generation with LED chips
JP4674348B2 (en) Phosphor, method for producing the same, and light emitting device
JP5446511B2 (en) Phosphor and method for producing the same, phosphor-containing composition and light emitting device using the phosphor, and image display device and lighting device using the light emitting device
WO2011016486A1 (en) Fluorescent substance, process for producing same, and luminescent device including same
JP2008227523A (en) Nitride phosphor and method for manufacturing the same, and light emitting device using nitride phosphor
CN101641425B (en) Luminophores made of doped garnet for pcLEDs
JPWO2010110457A1 (en) Phosphor, method for manufacturing the same, light emitting device, and image display device
JP4582259B2 (en) Phosphor and method for producing the same, phosphor-containing composition and light emitting device using the phosphor, and image display device and lighting device using the light emitting device
CN101186820B (en) Fluorophor, preparation method and luminescent device thereof
JP5503871B2 (en) Charge compensated nitride phosphors for use in lighting applications
US20040135154A1 (en) White light emitting device based on uv led and phosphor blend

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070131

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070131

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090824

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090924

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090929

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091214

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100420

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20100513

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100519

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20100514

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130611

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250