CN101510579B - Luminous element and method for producing the same - Google Patents
Luminous element and method for producing the same Download PDFInfo
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- CN101510579B CN101510579B CN2008100742415A CN200810074241A CN101510579B CN 101510579 B CN101510579 B CN 101510579B CN 2008100742415 A CN2008100742415 A CN 2008100742415A CN 200810074241 A CN200810074241 A CN 200810074241A CN 101510579 B CN101510579 B CN 101510579B
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- light
- chip
- emitting component
- support
- mould
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Abstract
The invention provides a manufacturing method of a light-emitting device, which comprises the following steps of: providing a bracket with chips, inserting the bracket into a mold cavity of a first mold in an inverted manner, filling fluorescent gel into the mold cavity of the first mold, carrying out a first setting procedure, molding the fluorescent gel, forming a fluorescent powder layer and removing the mold.
Description
Technical field
The present invention particularly about a kind of manufacture method of light-emitting diode, reaches the light-emitting diode that forms with the method relevant for a kind of manufacture method of light-emitting component.
Background technology
Because the important application of solid luminescent and LCD backlight, the development of semiconductor light-emitting diode has attracted a lot of attentions recently, and the utmost point has an opportunity to replace conventional lighting sources equipment, as fluorescent lamp, incandescent lamp bulb etc.In the white light source development of the solid luminescent of saving the energy and LCD backlight, white light emitting diode becomes many themes of being attracted attention.White light emitting diode adopts the blue light-emitting diode luminescence unit, again in its surface coated one deck yellow (YAG) fluorescent material, by blue-light excited fluorescent colloid, make it to produce the light of different wave length, mix blue light color originally with the generation white light, or make white light emitting diode with UV-light luminous unit hybrid RGB three-wavelength fluorescent material.
Fig. 1 shows the manufacture method of a known light-emitting diode, it is placed on a light-emitting diode chip for backlight unit 102 in the support bowl cup 104 earlier, use a syringe 112 fluorescent glue 108 to be injected support bowl cup 104 in a glue mode, then carry out baking procedure, fluorescent glue 108 is solidified, because the influence of gravity, after after a while, the fluorescent material concentration of fluorescent glue 108 bottom parts can be than the fluorescent material concentration height (the expression fluorescent material of 122 summaries among the figure) of top part, that is, fluorescent material concentration near the bottom of chip 102 surface and support bowl cup 104 is higher, the problem that easily causes fluorescent material to wear out because of the chip high-temperature operation.Fluorescent glue 108 is after baking, and the phenomenon that contracts in the surface can produce causes surperficial 110 out-of-flatnesses, and thickness is wayward.
Fig. 2 shows the manufacture method of another known light-emitting diode, and it uses a syringe 206 in a glue mode fluorescent glue 202 to be coated on chip 204 surfaces, and this kind method is difficult for the evenly thickness of coating fluorescent glue 202.This kind method can cause near the fluorescent material concentration of the fluorescent glue 202 on chip 204 surfaces higher equally, causes the chip high-temperature operation to cause the aging problem of fluorescent material.
Summary of the invention
The present invention proposes a kind of manufacture method of light-emitting diode, and the structure of the method formation.
The invention provides a kind of manufacture method of light-emitting component, may further comprise the steps: support is provided, comprises chip on it; Support is inserted in the die cavity of first mould in the mode of falling to insert; In the die cavity of first mould, insert fluorescent glue; Carry out the curing schedule first time, make the fluorescent glue moulding, form phosphor powder layer, and carry out from the mould step.
The invention provides a kind of light-emitting component, comprise with lower unit: support; Chip is arranged on the support; Phosphor powder layer, covered section support and chip at least; And adhesive layer, the coating fluorescent powder layer, wherein in the phosphor powder layer away from the fluorescent material concentration of chip fluorescent material concentration height than adjacent chips.
Description of drawings
Fig. 1 shows the manufacture method of a known light-emitting diode.
Fig. 2 shows the manufacture method of another known light-emitting diode.
Fig. 3 A～Fig. 3 D describes the manufacture method of one embodiment of the invention light-emitting diode.
Fig. 4 A～Fig. 4 D describes the manufacture method of another embodiment of the present invention light-emitting diode.
Fig. 5 describes the present invention's profile of another embodiment light-emitting diode again.
The main element symbol description
102～chip;
104～mould;
122～fluorescent material;
108～fluorescent glue;
110～surface;
112～syringe;
202～fluorescent glue;
204～chip;
206～syringe;
302～the second metal legs;
304～carrying platform;
306～the first metal legs;
308～support;
310～the first connect lead;
312～the second connect lead;
314～chip;
316～the first moulds;
318～die cavity;
320～phosphor powder layer;
322～fluorescent material;
324～adhesive layer;
The structure of 326～eyeglass shape;
328～the second moulds;
330～die cavity;
402～the second metal legs;
404～carrying platform;
406～the first metal legs;
408～support;
410～chip;
412～the first connect lead;
414～the second connect lead;
416～substratum transparent;
416a～substratum transparent;
418～the first moulds;
420～die cavity;
422～phosphor powder layer;
424～the second moulds;
426～die cavity;
428～adhesive layer.
Embodiment
Below cooperate Fig. 3 A～Fig. 3 D to describe the manufacture method of one embodiment of the invention light-emitting diode.Please refer to Fig. 3 A, a support 308 is provided, comprise the carrying platform 304 that one first metal leg, 306, one second metal legs 302 and for example copper are formed.Carry out a die bonding and lead-in wire bonding step, light-emitting diode chip for backlight unit 314 is fixed on the carrying platform 304, and connect lead 310 with one first the chip 314 and first metal leg 306 are electrically connected, connect lead 312 with one second the chip 314 and second metal leg 302 are electrically connected.The light-emitting diode chip for backlight unit of present embodiment is power chip in (for example power is greater than 0.5W) or high-power die (for example power is greater than 1W), and it is the heat radiation that helps chip 314 that chip 314 is fixed on the carrying platform 304.
Please refer to Fig. 3 B, to fall to insert mode the support 308 of part is inserted in the die cavity 318 of first mould 316 together with chip 314 support 308 of die bonding and lead-in wire bonding.In die cavity 318, pour into phosphor gel, then carry out the baking-curing step first time, make the phosphor gel moulding, form a phosphor powder layer 320.Shown in Fig. 3 B, the phosphor powder layer 320 of present embodiment at least coating chip 314 around, but and the support 308 of phosphor powder layer 320 other covered sections, it should be noted that, phosphor powder layer 320 is in manufacturing process, because of the event of gravity, the fluorescent material concentration of phosphor powder layer 320 bottom parts can be than the fluorescent material concentration height (the expression fluorescent material of 322 summaries among the figure) of top part, so the fluorescent material concentration near the sidewall of die cavity 318 and bottom is higher, that is, fluorescent material concentration around the phosphor powder layer 320 is higher, and lower in abutting connection with the fluorescent material concentration of chip 314, thereby can reduce fluorescent material and be deposited in chip 314 surfaces and produce aging problems.In addition, general led chip 314 has forward light stronger, the tendency that lateral light is more weak, and the characteristic of above-mentioned precipitation can make the fluorescent material concentration of part phosphor powder layer 320 of contiguous die cavity 318 bottoms higher, the fluorescent material concentration of the part phosphor powder layer 320 of contiguous die cavity 318 sidewalls is then relatively low, the distribution of this kind fluorescent material can remedy the stronger characteristic of led chip forward light, and the photochromic pool that makes it to send is more even.
Because present embodiment is the shape that constitutes phosphor powder layer 320 with the die cavity 318 of first mould 316, and the outward appearance of phosphor powder layer 320 and shape are controlled accurately, has good reproducibility.In addition, present embodiment can be made the location to the action that support 308 pours into the die cavity 318 of first mould 316, and the degree of depth that makes support 308 insert die cavitys 318 is fixed, so easily thickness (the t of phosphor powder layer 320 around the control chip 314
1, t
2), reach the effect of even mixed light.
Please refer to Fig. 3 C, carry out one, then the part support 308 of coating fluorescent powder layer 320 is inserted in the die cavity 330 of second mould 328 together with chip 314 from the mould step.Then, in die cavity 330, pour into transparent adhesive tape, carry out the baking-curing step second time, make the transparent adhesive tape moulding, form an adhesive layer 324 (or can be described as outward appearance glue).In one embodiment, this transparent adhesive tape can be resin glue or silica gel.Please refer to Fig. 3 D, carry out one from the mould step, finish the light-emitting component of present embodiment, the adhesive layer 324 of present embodiment also can comprise the structure 326 of an eyeglass shape.It should be noted that, according to above-mentioned effect of falling to insert technology, present embodiment is away from the fluorescent material concentration of the phosphor powder layer 320 (top of phosphor powder layer 320 and sidewall) of the chip 314 fluorescent material concentration height than the phosphor powder layer 320 of adjacent chips 314, in addition, be close to the fluorescent material concentration height of more contiguous phosphor powder layer 320 sidewalls of fluorescent material concentration at phosphor powder layer 320 tops.
Below cooperate Fig. 4 A～Fig. 4 D to describe the manufacture method of another embodiment of the present invention light-emitting diode.Please refer to Fig. 4 A, a support 408 is provided, comprise the carrying platform 404 that one first metal leg, 406, one second metal legs 402 and for example copper are formed.Carry out a die bonding and lead-in wire bonding step, light-emitting diode chip for backlight unit 410 is fixed on the carrying platform 404, and connect lead 412 with one first the chip 410 and first metal leg 406 are electrically connected, connect lead 414 with one second the chip 410 and second metal leg 402 are electrically connected.The light-emitting diode chip for backlight unit 410 of present embodiment is power chip in (for example power is greater than 0.5W) or high-power die (for example power is greater than 1W), chip 410 is fixed in help chip 410 heat radiations on the carrying platform 404.After die bonding and lead-in wire bonding step, present embodiment is in the mode of a glue, forms the substratum transparent 416 of silica gel or other flexible glue for example, covers the carrying platform 404 of chip 410 and part.
Please refer to Fig. 4 B, to fall to insert mode the support 408 of part is inserted in the die cavity 420 of first mould 418 together with chip 410 support 408.Then, in die cavity 420, pour into phosphor gel, carry out the baking-curing step first time, make the phosphor gel moulding, form a phosphor powder layer 422.Please refer to Fig. 4 C, carry out one from the mould step, the part support 408 that then will be formed with phosphor powder layer 422 is inserted in the die cavity 426 of second mould 424 together with chip 410.In die cavity 426, pour into transparent adhesive tape, carry out the baking-curing step second time, make the transparent adhesive tape moulding, form an adhesive layer 428 (or can be described as outward appearance glue).Please refer to Fig. 4 D, carry out one, finish the light-emitting component of present embodiment from the mould step.It should be noted that, the difference of present embodiment and the foregoing description, be that present embodiment forms a substratum transparent 416 on chip 410, phosphor powder layer 422 and chip 410 are isolated, cause the aging problem of fluorescent material because of contact chip 410 causes chip 410 high-temperature operations to avoid phosphor powder layer 422.In addition, because present embodiment is formed with for example substratum transparent 416 of resin, can reduce the consumption of the fluorescent glue that forms phosphor powder layer 422.
Fig. 5 shows the present invention's another embodiment light-emitting component again, it is with respect to the difference of Fig. 4 A～Fig. 4 D embodiment light-emitting component, be that present embodiment is when forming substratum transparent 416a, adopt the mould molding mode to make, with outward appearance and the size of more precisely controlling substratum transparent 416a, and the thickness of the substratum transparent 416a that forms of mode can be thicker by this, further saves the consumption of fluorescent glue, to reach cost-effective purpose.Have the knack of the manufacture method that this skill personage can understand the present embodiment luminous element packing structure according to the foregoing description,, be not described in detail the step of present embodiment at this for succinctly.
The luminous element packing structure of the above embodiment of the present invention, its fluorescent material concentration in abutting connection with the part phosphor powder layer of led chip is relatively low, or led chip and phosphor powder layer isolate with substratum transparent, reduce the chip high-temperature operation and cause the aging problem of fluorescent material.In addition, the outward appearance of phosphor powder layer and shape can be controlled accurately, have good reproducibility.
The embodiment that more than provides is in order to the different technical characterictic of description the present invention, but according to notion of the present invention, it can comprise or apply to technical scope widely.It is noted that, embodiment is only in order to disclose the ad hoc approach of technology of the present invention, device, composition, manufacturing and use, not in order to limiting the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention, when doing a little change and retouching.Therefore, protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (19)
1. the manufacture method of a light-emitting component comprises:
Support is provided, comprises chip on it;
This support is inserted in the die cavity of first mould to fall to insert mode;
In the die cavity of this first mould, insert fluorescent glue;
Carry out the curing schedule first time, make this fluorescent glue moulding, form phosphor powder layer; And
Carry out from the mould step, wherein the fluorescent material concentration height of contiguous this chip of the fluorescent material concentration of the sidewall of the die cavity of contiguous this first mould and bottom in this fluorescent glue.
2. the manufacture method of light-emitting component as claimed in claim 1 also comprises:
This support is inserted in the die cavity of second mould to fall to insert mode;
In the die cavity of this second mould, insert the glue material;
Carry out the curing schedule second time, make this glue material forming, form adhesive layer; And
Carry out from the mould step.
3. the manufacture method of light-emitting component as claimed in claim 2, wherein this glue material is a transparent adhesive tape.
4. the manufacture method of light-emitting component as claimed in claim 3, wherein this transparent adhesive tape is resin glue or silica gel.
5. the manufacture method of light-emitting component as claimed in claim 1, wherein this chip is a light-emitting diode chip for backlight unit, and the power of this light-emitting diode chip for backlight unit is greater than 0.5W.
6. the manufacture method of light-emitting component as claimed in claim 5, wherein the power of this light-emitting diode chip for backlight unit is greater than 1W.
7. the manufacture method of light-emitting component as claimed in claim 1, wherein this support comprises carrying platform, first metal leg and second metal leg at least.
8. the manufacture method of light-emitting component as claimed in claim 7, wherein before the step in the die cavity that this support is inserted this first mould in the mode of inserting, also comprise the bonding step that goes between, connect lead with first this chip and this first metal leg are electrically connected, connect lead with second this chip and this second metal leg are electrically connected.
9. the manufacture method of light-emitting component as claimed in claim 1 wherein in the step of the die cavity that this support is inserted this first mould in the mode of inserting, is located this support, and the degree of depth that makes this support insert the die cavity of this first mould is fixed.
10. the manufacture method of light-emitting component as claimed in claim 1, wherein the fluorescent material concentration height of the die cavity sidewall of contiguous this first mould of fluorescent material concentration of the die cavity of contiguous this first mould bottom.
11. the manufacture method of light-emitting component as claimed in claim 1 wherein before the step of the die cavity that this support is inserted this first mould in the mode of inserting, also comprises the formation substratum transparent, covers this chip at least.
12. the manufacture method of light-emitting component as claimed in claim 11 forms this substratum transparent in the mode of a glue.
13. the manufacture method of light-emitting component as claimed in claim 12 forms this substratum transparent in formed in mould mode.
14. a light-emitting component comprises:
Support;
Chip is arranged at this support;
Phosphor powder layer, this support of covered section and this chip at least; And
Adhesive layer coats this phosphor powder layer,
Wherein be close to the fluorescent material concentration height of this chip in this phosphor powder layer away from the fluorescent material concentration of this chip, wherein this chip is a light-emitting diode chip for backlight unit, and the power of this light-emitting diode chip for backlight unit is greater than 0.5W.
15. light-emitting component as claimed in claim 14, wherein the fluorescent material concentration height of contiguous this phosphor powder layer sidewall of the fluorescent material concentration at contiguous this phosphor powder layer top.
16. light-emitting component as claimed in claim 14, wherein this adhesive layer is a transparent adhesive tape.
17. light-emitting component as claimed in claim 16, wherein this transparent adhesive tape is resin glue or silica gel.
18. light-emitting component as claimed in claim 14, wherein the power of this light-emitting diode chip for backlight unit is greater than 1W.
19. a light-emitting component comprises:
Support;
Chip is arranged at this support;
Phosphor powder layer, this support of covered section and this chip at least;
Adhesive layer coats this phosphor powder layer, wherein is close to the fluorescent material concentration height of this chip in this phosphor powder layer away from the fluorescent material concentration of this chip; And
Substratum transparent is arranged between this chip and this phosphor powder layer, and wherein this substratum transparent is a silica gel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100742415A CN101510579B (en) | 2008-02-13 | 2008-02-13 | Luminous element and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100742415A CN101510579B (en) | 2008-02-13 | 2008-02-13 | Luminous element and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101510579A CN101510579A (en) | 2009-08-19 |
| CN101510579B true CN101510579B (en) | 2011-04-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100742415A Expired - Fee Related CN101510579B (en) | 2008-02-13 | 2008-02-13 | Luminous element and method for producing the same |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101980385A (en) * | 2010-07-19 | 2011-02-23 | 宁波市瑞康光电有限公司 | Method for encapsulating light-emitting diode (LED), LED and LED illumination device |
| CN105047796B (en) * | 2015-09-02 | 2018-09-04 | 深圳市瑞隆光电科技有限公司 | Full-ambient-light L ED light source and preparation method thereof |
| CN105552199B (en) * | 2016-02-01 | 2018-11-02 | 浙江双宇电子科技有限公司 | A kind of LED light source and preparation method thereof that full angle is luminous |
Citations (3)
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|---|---|---|---|---|
| CN1607681A (en) * | 2003-10-15 | 2005-04-20 | 陈聪欣 | Method for controlling crawling glue phenomenon in preparation process of light emitting diode sealing glue |
| CN1633718A (en) * | 2001-09-03 | 2005-06-29 | 松下电器产业株式会社 | Semiconductor light-emitting device, light-emitting apparatus and manufacturing method of semiconductor light-emitting device |
| JP2007201444A (en) * | 2005-12-26 | 2007-08-09 | Toshiba Lighting & Technology Corp | Light emitting device |
-
2008
- 2008-02-13 CN CN2008100742415A patent/CN101510579B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1633718A (en) * | 2001-09-03 | 2005-06-29 | 松下电器产业株式会社 | Semiconductor light-emitting device, light-emitting apparatus and manufacturing method of semiconductor light-emitting device |
| CN1607681A (en) * | 2003-10-15 | 2005-04-20 | 陈聪欣 | Method for controlling crawling glue phenomenon in preparation process of light emitting diode sealing glue |
| JP2007201444A (en) * | 2005-12-26 | 2007-08-09 | Toshiba Lighting & Technology Corp | Light emitting device |
Non-Patent Citations (2)
| Title |
|---|
| JP特开2004-111882A 2004.04.08 |
| JP特开2006-60253A 2006.03.02 |
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| CN101510579A (en) | 2009-08-19 |
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Granted publication date: 20110406 Termination date: 20190213 |