JP2009513027A5 - - Google Patents

Download PDF

Info

Publication number
JP2009513027A5
JP2009513027A5 JP2008537749A JP2008537749A JP2009513027A5 JP 2009513027 A5 JP2009513027 A5 JP 2009513027A5 JP 2008537749 A JP2008537749 A JP 2008537749A JP 2008537749 A JP2008537749 A JP 2008537749A JP 2009513027 A5 JP2009513027 A5 JP 2009513027A5
Authority
JP
Japan
Prior art keywords
substrate support
substrate
roughness
silicon carbide
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008537749A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009513027A (ja
Filing date
Publication date
Priority claimed from US11/258,345 external-priority patent/US20070089836A1/en
Application filed filed Critical
Publication of JP2009513027A publication Critical patent/JP2009513027A/ja
Publication of JP2009513027A5 publication Critical patent/JP2009513027A5/ja
Pending legal-status Critical Current

Links

JP2008537749A 2005-10-24 2006-10-12 半導体処理チャンバ Pending JP2009513027A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/258,345 US20070089836A1 (en) 2005-10-24 2005-10-24 Semiconductor process chamber
PCT/US2006/039914 WO2007050309A1 (en) 2005-10-24 2006-10-12 Semiconductor process chamber

Publications (2)

Publication Number Publication Date
JP2009513027A JP2009513027A (ja) 2009-03-26
JP2009513027A5 true JP2009513027A5 (enExample) 2009-11-26

Family

ID=37968117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008537749A Pending JP2009513027A (ja) 2005-10-24 2006-10-12 半導体処理チャンバ

Country Status (7)

Country Link
US (1) US20070089836A1 (enExample)
EP (1) EP1940560A4 (enExample)
JP (1) JP2009513027A (enExample)
KR (2) KR20080071148A (enExample)
CN (1) CN1956145B (enExample)
TW (1) TWI382450B (enExample)
WO (1) WO2007050309A1 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5412759B2 (ja) * 2008-07-31 2014-02-12 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの保持具及びそのウェーハの製造方法
CN101660143B (zh) * 2008-08-28 2011-08-17 北京北方微电子基地设备工艺研究中心有限责任公司 平板加热器及等离子体加工设备
JP5655010B2 (ja) 2009-02-11 2015-01-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 非接触基板処理のための方法及び装置
KR101105697B1 (ko) * 2010-03-02 2012-01-17 주식회사 엘지실트론 반도체 제조 장치
US20130315895A1 (en) 2010-07-01 2013-11-28 Takeda Pharmaceutical Company Limited COMBINATION OF A cMET INHIBITOR AND AN ANTIBODY TO HGF AND/OR cMET
US20120148760A1 (en) * 2010-12-08 2012-06-14 Glen Eric Egami Induction Heating for Substrate Processing
DE102011007632B3 (de) * 2011-04-18 2012-02-16 Siltronic Ag Verfahren und Vorrichtung zum Abscheiden einer von Prozessgas stammenden Materialschicht auf einer Substratscheibe
US20130025538A1 (en) * 2011-07-27 2013-01-31 Applied Materials, Inc. Methods and apparatus for deposition processes
TWI505400B (zh) 2011-08-26 2015-10-21 Lg Siltron Inc 基座
TWI541928B (zh) * 2011-10-14 2016-07-11 晶元光電股份有限公司 晶圓載具
US9273408B2 (en) * 2012-09-12 2016-03-01 Globalfoundries Inc. Direct injection molded solder process for forming solder bumps on wafers
JP2016501445A (ja) * 2012-11-21 2016-01-18 イー・ヴィー グループ インコーポレイテッドＥＶ Ｇｒｏｕｐ Ｉｎｃ． ウェハの収容および載置用の収容具
US9123758B2 (en) * 2013-02-06 2015-09-01 Applied Materials, Inc. Gas injection apparatus and substrate process chamber incorporating same
US9799548B2 (en) * 2013-03-15 2017-10-24 Applied Materials, Inc. Susceptors for enhanced process uniformity and reduced substrate slippage
US9551070B2 (en) 2014-05-30 2017-01-24 Applied Materials, Inc. In-situ corrosion resistant substrate support coating
US20160056059A1 (en) * 2014-08-22 2016-02-25 Applied Materials, Inc. Component for semiconductor process chamber having surface treatment to reduce particle emission
US20160068996A1 (en) * 2014-09-05 2016-03-10 Applied Materials, Inc. Susceptor and pre-heat ring for thermal processing of substrates
ES2764299T3 (es) 2014-12-09 2020-06-02 Inst Nat Sante Rech Med Anticuerpos monoclonales humanos contra AXL
WO2016111747A1 (en) * 2015-01-09 2016-07-14 Applied Materials, Inc. Substrate transfer mechanisms
WO2016135041A1 (en) 2015-02-26 2016-09-01 INSERM (Institut National de la Santé et de la Recherche Médicale) Fusion proteins and antibodies comprising thereof for promoting apoptosis
JP7008509B2 (ja) * 2015-05-27 2022-02-10 アプライド マテリアルズ インコーポレイテッド 高成長率のｅｐｉチャンバのための遮熱リング
JP6435992B2 (ja) * 2015-05-29 2018-12-12 株式会社Sumco エピタキシャル成長装置、エピタキシャルウェーハの製造方法およびエピタキシャル成長装置用リフトピン
US20170076972A1 (en) * 2015-09-15 2017-03-16 Veeco Instruments Inc. Planetary wafer carriers
KR102632725B1 (ko) 2016-03-17 2024-02-05 에이에스엠 아이피 홀딩 비.브이. 기판 지지 플레이트 및 이를 포함하는 박막 증착 장치 및 박막 증착 방법
CN107201507B (zh) * 2016-03-17 2019-09-17 Asm知识产权私人控股有限公司 衬底支撑板和包含其的薄膜沉积设备
KR102040378B1 (ko) * 2016-12-20 2019-11-05 주식회사 티씨케이 지그를 이용한 반도체 제조용 부품의 제조방법 및 제조장치
US10629416B2 (en) * 2017-01-23 2020-04-21 Infineon Technologies Ag Wafer chuck and processing arrangement
US11018047B2 (en) * 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
JP7329960B2 (ja) * 2019-05-14 2023-08-21 東京エレクトロン株式会社 載置台およびプラズマ処理装置
CN111501042B (zh) * 2020-06-02 2023-09-01 海南师范大学 一种边发射半导体激光芯片腔面镀膜夹具
US12211734B2 (en) * 2021-03-12 2025-01-28 Applied Materials, Inc. Lift pin mechanism
US20240014065A1 (en) * 2022-07-08 2024-01-11 Applied Materials, Inc. Flat susceptor with grid pattern and venting grooves on surface thereof
EP4335951A1 (de) 2022-09-08 2024-03-13 Siltronic AG Suszeptor mit austauschbaren auflageelementen

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62100477A (ja) * 1985-10-25 1987-05-09 イビデン株式会社 ドライ・エツチング装置用の炭化珪素質部品
US5589116A (en) * 1991-07-18 1996-12-31 Sumitomo Metal Industries, Ltd. Process for preparing a silicon carbide sintered body for use in semiconductor equipment
US5536918A (en) * 1991-08-16 1996-07-16 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
JP3317781B2 (ja) * 1994-06-08 2002-08-26 東芝セラミックス株式会社 半導体ウエハの熱処理用サセプタの製造方法
US5915310A (en) * 1995-07-27 1999-06-29 Consolidated Natural Gas Service Company Apparatus and method for NOx reduction by selective injection of natural gas jets in flue gas
JPH0964158A (ja) * 1995-08-29 1997-03-07 Toshiba Mach Co Ltd 試料昇降装置
US6113702A (en) * 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
DE69704638T2 (de) * 1996-02-29 2001-08-30 Bridgestone Corp., Tokio/Tokyo Verfahren zur Herstellung eines Sinterkörpers aus Siliciumcarbid
US6440221B2 (en) * 1996-05-13 2002-08-27 Applied Materials, Inc. Process chamber having improved temperature control
JPH10101432A (ja) * 1996-08-05 1998-04-21 Bridgestone Corp ドライエッチング装置用部品
US5910221A (en) * 1997-06-18 1999-06-08 Applied Materials, Inc. Bonded silicon carbide parts in a plasma reactor
JP4390872B2 (ja) * 1997-06-20 2009-12-24 株式会社ブリヂストン 半導体製造装置用部材および半導体製造装置用部材の製造方法
US6007635A (en) * 1997-11-26 1999-12-28 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
US6090733A (en) * 1997-08-27 2000-07-18 Bridgestone Corporation Sintered silicon carbide and method for producing the same
KR20010031714A (ko) * 1997-11-03 2001-04-16 러셀 엔. 페어뱅크스, 쥬니어 수명이 긴 고온 공정 챔버
WO1999042748A1 (en) * 1998-02-18 1999-08-26 Nippon Pillar Packing Co., Ltd. Rotary joint
US6277194B1 (en) * 1999-10-21 2001-08-21 Applied Materials, Inc. Method for in-situ cleaning of surfaces in a substrate processing chamber
US6534751B2 (en) * 2000-02-28 2003-03-18 Kyocera Corporation Wafer heating apparatus and ceramic heater, and method for producing the same
JP2002231713A (ja) * 2001-01-30 2002-08-16 Ibiden Co Ltd 半導体製造装置用治具
JP3931578B2 (ja) * 2001-03-30 2007-06-20 信越半導体株式会社 気相成長装置
JP2003197532A (ja) * 2001-12-21 2003-07-11 Sumitomo Mitsubishi Silicon Corp エピタキシャル成長方法及びエピタキシャル成長用サセプター
EP1484787A1 (en) * 2002-03-13 2004-12-08 Sumitomo Electric Industries, Ltd. Holder for semiconductor production system
JP4003527B2 (ja) * 2002-04-25 2007-11-07 信越半導体株式会社 サセプタおよび半導体ウェーハの製造方法
JP4354243B2 (ja) * 2003-04-21 2009-10-28 東京エレクトロン株式会社 被処理体の昇降機構及び処理装置
US7585371B2 (en) * 2004-04-08 2009-09-08 Micron Technology, Inc. Substrate susceptors for receiving semiconductor substrates to be deposited upon

Similar Documents

Publication Publication Date Title
JP2009513027A5 (enExample)
TWI520259B (zh) 配置處理腔室中之基板的設備與方法
TWI382450B (zh) 半導體製程處理室
JP4669476B2 (ja) 半導体製造時にウェハを支持するホルダ
US5656093A (en) Wafer spacing mask for a substrate support chuck and method of fabricating same
JP5395810B2 (ja) 基板支持ユニット、基板処理装置、及び基板支持ユニットを製造する方法
CN211045385U (zh) 基座
KR100883285B1 (ko) 열 분산 플레이트 및 에지 지지대를 구비하는 어셈블리
KR20170054447A (ko) 기판들의 열적 프로세싱을 위한 서셉터 및 예열 링
WO2009076346A2 (en) Lift pin for substrate processing
TWI614837B (zh) 具有受控制的封閉間隙之基板支撐件
JP2014160819A5 (enExample)
EP2217741A1 (en) A device for layered deposition of various materials on a semiconductor substrate, as well as a lift pin for use in such a device
TW466666B (en) Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck
CN109314056B (zh) 暴露面积增大石英玻璃构件及其制造方法以及多重外周刃刀片
TW201314743A (zh) 薄膜沉積系統
JP2007294990A (ja) 基板処理装置
TWM599813U (zh) 一種化學氣相沉積設備以及用於其的熱反射板
JP5087375B2 (ja) 炭化ケイ素半導体デバイスの製造方法
KR101231330B1 (ko) 소결체의 제조 방법
TW202534824A (zh) 退火腔室
CN117981069A (zh) 基板支撑件
TW200818371A (en) A method for manufacturing a device for supporting a substrate during the manufacturing of semi-conductor components as well as such a device
KR20060136037A (ko) 샤워 헤드 어셈블리 및 이를 포함하는 반도체 기판 가공장치
KR20070000067A (ko) 샤워 헤드 어셈블리 및 이를 포함하는 반도체 기판 가공장치