JP2009513027A - 半導体処理チャンバ - Google Patents

半導体処理チャンバ Download PDF

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Publication number
JP2009513027A
JP2009513027A JP2008537749A JP2008537749A JP2009513027A JP 2009513027 A JP2009513027 A JP 2009513027A JP 2008537749 A JP2008537749 A JP 2008537749A JP 2008537749 A JP2008537749 A JP 2008537749A JP 2009513027 A JP2009513027 A JP 2009513027A
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JP
Japan
Prior art keywords
substrate support
substrate
silicon carbide
roughness
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008537749A
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English (en)
Japanese (ja)
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JP2009513027A5 (enExample
Inventor
クレイグ メッツナー，
パー−オヴ ハンソン，
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2009513027A publication Critical patent/JP2009513027A/ja
Publication of JP2009513027A5 publication Critical patent/JP2009513027A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2008537749A 2005-10-24 2006-10-12 半導体処理チャンバ Pending JP2009513027A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/258,345 US20070089836A1 (en) 2005-10-24 2005-10-24 Semiconductor process chamber
PCT/US2006/039914 WO2007050309A1 (en) 2005-10-24 2006-10-12 Semiconductor process chamber

Publications (2)

Publication Number Publication Date
JP2009513027A true JP2009513027A (ja) 2009-03-26
JP2009513027A5 JP2009513027A5 (enExample) 2009-11-26

Family

ID=37968117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008537749A Pending JP2009513027A (ja) 2005-10-24 2006-10-12 半導体処理チャンバ

Country Status (7)

Country Link
US (1) US20070089836A1 (enExample)
EP (1) EP1940560A4 (enExample)
JP (1) JP2009513027A (enExample)
KR (2) KR20080071148A (enExample)
CN (1) CN1956145B (enExample)
TW (1) TWI382450B (enExample)
WO (1) WO2007050309A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016194291A1 (ja) * 2015-05-29 2016-12-08 株式会社Sumco エピタキシャル成長装置、エピタキシャルウェーハの製造方法およびエピタキシャル成長装置用リフトピン
JP2019169701A (ja) * 2018-01-25 2019-10-03 アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ ハイブリッドリフトピン
JP2020188129A (ja) * 2019-05-14 2020-11-19 東京エレクトロン株式会社 載置台および基板処理装置
JP2024509867A (ja) * 2021-03-12 2024-03-05 アプライド マテリアルズ インコーポレイテッド リフトピン機構

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JP5412759B2 (ja) * 2008-07-31 2014-02-12 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの保持具及びそのウェーハの製造方法
CN101660143B (zh) * 2008-08-28 2011-08-17 北京北方微电子基地设备工艺研究中心有限责任公司 平板加热器及等离子体加工设备
JP5655010B2 (ja) 2009-02-11 2015-01-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 非接触基板処理のための方法及び装置
KR101105697B1 (ko) * 2010-03-02 2012-01-17 주식회사 엘지실트론 반도체 제조 장치
US20130315895A1 (en) 2010-07-01 2013-11-28 Takeda Pharmaceutical Company Limited COMBINATION OF A cMET INHIBITOR AND AN ANTIBODY TO HGF AND/OR cMET
US20120148760A1 (en) * 2010-12-08 2012-06-14 Glen Eric Egami Induction Heating for Substrate Processing
DE102011007632B3 (de) * 2011-04-18 2012-02-16 Siltronic Ag Verfahren und Vorrichtung zum Abscheiden einer von Prozessgas stammenden Materialschicht auf einer Substratscheibe
US20130025538A1 (en) * 2011-07-27 2013-01-31 Applied Materials, Inc. Methods and apparatus for deposition processes
TWI505400B (zh) 2011-08-26 2015-10-21 Lg Siltron Inc 基座
TWI541928B (zh) * 2011-10-14 2016-07-11 晶元光電股份有限公司 晶圓載具
US9273408B2 (en) * 2012-09-12 2016-03-01 Globalfoundries Inc. Direct injection molded solder process for forming solder bumps on wafers
JP2016501445A (ja) * 2012-11-21 2016-01-18 イー・ヴィー グループ インコーポレイテッドＥＶ Ｇｒｏｕｐ Ｉｎｃ． ウェハの収容および載置用の収容具
US9123758B2 (en) * 2013-02-06 2015-09-01 Applied Materials, Inc. Gas injection apparatus and substrate process chamber incorporating same
US9799548B2 (en) * 2013-03-15 2017-10-24 Applied Materials, Inc. Susceptors for enhanced process uniformity and reduced substrate slippage
US9551070B2 (en) 2014-05-30 2017-01-24 Applied Materials, Inc. In-situ corrosion resistant substrate support coating
US20160056059A1 (en) * 2014-08-22 2016-02-25 Applied Materials, Inc. Component for semiconductor process chamber having surface treatment to reduce particle emission
US20160068996A1 (en) * 2014-09-05 2016-03-10 Applied Materials, Inc. Susceptor and pre-heat ring for thermal processing of substrates
ES2764299T3 (es) 2014-12-09 2020-06-02 Inst Nat Sante Rech Med Anticuerpos monoclonales humanos contra AXL
WO2016111747A1 (en) * 2015-01-09 2016-07-14 Applied Materials, Inc. Substrate transfer mechanisms
WO2016135041A1 (en) 2015-02-26 2016-09-01 INSERM (Institut National de la Santé et de la Recherche Médicale) Fusion proteins and antibodies comprising thereof for promoting apoptosis
JP7008509B2 (ja) * 2015-05-27 2022-02-10 アプライド マテリアルズ インコーポレイテッド 高成長率のｅｐｉチャンバのための遮熱リング
US20170076972A1 (en) * 2015-09-15 2017-03-16 Veeco Instruments Inc. Planetary wafer carriers
KR102632725B1 (ko) 2016-03-17 2024-02-05 에이에스엠 아이피 홀딩 비.브이. 기판 지지 플레이트 및 이를 포함하는 박막 증착 장치 및 박막 증착 방법
CN107201507B (zh) * 2016-03-17 2019-09-17 Asm知识产权私人控股有限公司 衬底支撑板和包含其的薄膜沉积设备
KR102040378B1 (ko) * 2016-12-20 2019-11-05 주식회사 티씨케이 지그를 이용한 반도체 제조용 부품의 제조방법 및 제조장치
US10629416B2 (en) * 2017-01-23 2020-04-21 Infineon Technologies Ag Wafer chuck and processing arrangement
CN111501042B (zh) * 2020-06-02 2023-09-01 海南师范大学 一种边发射半导体激光芯片腔面镀膜夹具
US20240014065A1 (en) * 2022-07-08 2024-01-11 Applied Materials, Inc. Flat susceptor with grid pattern and venting grooves on surface thereof
EP4335951A1 (de) 2022-09-08 2024-03-13 Siltronic AG Suszeptor mit austauschbaren auflageelementen

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JPS62100477A (ja) * 1985-10-25 1987-05-09 イビデン株式会社 ドライ・エツチング装置用の炭化珪素質部品
JPH07335572A (ja) * 1994-06-08 1995-12-22 Toshiba Ceramics Co Ltd 半導体ウエハの熱処理用サセプタ及びその製造方法
JPH0964158A (ja) * 1995-08-29 1997-03-07 Toshiba Mach Co Ltd 試料昇降装置
JPH1171181A (ja) * 1997-06-20 1999-03-16 Bridgestone Corp 半導体製造装置用部材
JP2001522138A (ja) * 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 長寿命高温プロセスチャンバ
JP2002231713A (ja) * 2001-01-30 2002-08-16 Ibiden Co Ltd 半導体製造装置用治具
JP2002299260A (ja) * 2001-03-30 2002-10-11 Shin Etsu Handotai Co Ltd 気相成長装置
JP2003197532A (ja) * 2001-12-21 2003-07-11 Sumitomo Mitsubishi Silicon Corp エピタキシャル成長方法及びエピタキシャル成長用サセプター
JP2003318116A (ja) * 2002-04-25 2003-11-07 Shin Etsu Handotai Co Ltd サセプタおよび半導体ウェーハの製造方法
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JPS62100477A (ja) * 1985-10-25 1987-05-09 イビデン株式会社 ドライ・エツチング装置用の炭化珪素質部品
JPH07335572A (ja) * 1994-06-08 1995-12-22 Toshiba Ceramics Co Ltd 半導体ウエハの熱処理用サセプタ及びその製造方法
JPH0964158A (ja) * 1995-08-29 1997-03-07 Toshiba Mach Co Ltd 試料昇降装置
JPH1171181A (ja) * 1997-06-20 1999-03-16 Bridgestone Corp 半導体製造装置用部材
JP2001522138A (ja) * 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 長寿命高温プロセスチャンバ
JP2002231713A (ja) * 2001-01-30 2002-08-16 Ibiden Co Ltd 半導体製造装置用治具
JP2002299260A (ja) * 2001-03-30 2002-10-11 Shin Etsu Handotai Co Ltd 気相成長装置
JP2003197532A (ja) * 2001-12-21 2003-07-11 Sumitomo Mitsubishi Silicon Corp エピタキシャル成長方法及びエピタキシャル成長用サセプター
JP2003318116A (ja) * 2002-04-25 2003-11-07 Shin Etsu Handotai Co Ltd サセプタおよび半導体ウェーハの製造方法
JP2004343032A (ja) * 2003-04-21 2004-12-02 Tokyo Electron Ltd 被処理体の昇降機構及び処理装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016194291A1 (ja) * 2015-05-29 2016-12-08 株式会社Sumco エピタキシャル成長装置、エピタキシャルウェーハの製造方法およびエピタキシャル成長装置用リフトピン
JP2016225444A (ja) * 2015-05-29 2016-12-28 株式会社Sumco エピタキシャル成長装置、エピタキシャルウェーハの製造方法およびエピタキシャル成長装置用リフトピン
US11208718B2 (en) 2015-05-29 2021-12-28 Sumco Corporation Epitaxial growth device, production method for epitaxial wafer, and lift pin for epitaxial growth device
JP2019169701A (ja) * 2018-01-25 2019-10-03 アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ ハイブリッドリフトピン
JP7448311B2 (ja) 2018-01-25 2024-03-12 エーエスエム・アイピー・ホールディング・ベー・フェー ハイブリッドリフトピン
JP2020188129A (ja) * 2019-05-14 2020-11-19 東京エレクトロン株式会社 載置台および基板処理装置
JP7329960B2 (ja) 2019-05-14 2023-08-21 東京エレクトロン株式会社 載置台およびプラズマ処理装置
JP2024509867A (ja) * 2021-03-12 2024-03-05 アプライド マテリアルズ インコーポレイテッド リフトピン機構
JP7678126B2 (ja) 2021-03-12 2025-05-15 アプライド マテリアルズ インコーポレイテッド リフトピン機構

Also Published As

Publication number Publication date
CN1956145A (zh) 2007-05-02
TW200717593A (en) 2007-05-01
KR20110046579A (ko) 2011-05-04
TWI382450B (zh) 2013-01-11
US20070089836A1 (en) 2007-04-26
KR20080071148A (ko) 2008-08-01
EP1940560A1 (en) 2008-07-09
WO2007050309A1 (en) 2007-05-03
CN1956145B (zh) 2013-09-11
EP1940560A4 (en) 2010-09-15

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