JP2016501445A - ウェハの収容および載置用の収容具 - Google Patents
ウェハの収容および載置用の収容具 Download PDFInfo
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- JP2016501445A JP2016501445A JP2015544041A JP2015544041A JP2016501445A JP 2016501445 A JP2016501445 A JP 2016501445A JP 2015544041 A JP2015544041 A JP 2015544041A JP 2015544041 A JP2015544041 A JP 2015544041A JP 2016501445 A JP2016501445 A JP 2016501445A
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- 239000012530 fluid Substances 0.000 claims abstract description 43
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Packaging Frangible Articles (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
半導体業界では、様々な種類の収容具が使用されており、サンプルホルダまたはチャックとも呼ばれる。各塗布プロセスに応じて、表面全体または局部的に加熱でき、多様な形態およびサイズを有し、異なる保持原理に基づいている様々なサンプルホルダがある。ウェハを収容具に固定するために最も頻繁に使用される方法は、収容具の載置面の構造に真空を生むことにある。しばしば、チャックの目的は特に回転中にウェハを十分に固定することからなる。
この問題は、請求項1の特徴を用いて解決される。本発明の有利な展開は、従属請求項に明記される。また、明細書、請求項および/または図面で引用される少なくとも2つの特徴のすべての組合せも、本発明の範囲内にある。値の範囲の場合、指定される限界内にある値も限界として開示されるはずであり、あらゆる組合せで主張することができる。
図面において、同一のコンポーネントまたは同じ機能を果たすコンポーネントは、同じ参照符号を付している。
2、2’、2’’、2’’’ 載置面
3 ウェハ
3a 接触面
3k 周縁
3o 上面
4 リングセクション
5 上縁
6 凹み
7 周壁
8 収容スペース
9 流体
10 収容開口
11 収容用突起
12 接触エレメント
13、13’、13’’ 突起
d ウェハの厚さ
D 距離
A 接触平面
C オーバーフロー平面
R 回転方向
B1 円径
B2 内径
H1、H2、H3 高さ
Claims (10)
- ウェハ(3)の上面(3o)に流体(9)を塗布するためのウェハ(3)の収容および載置用収容具であって、
a)回転上縁(5)、
b)回転凹み(6)、および
c)前記上縁(5)から前記凹み(6)まで延びている周壁(7)、
を有する回転リングセクション(4)と、
前記ウェハ(3)の接触面(3a)に前記ウェハ(3)を収容するために、前記リングセクション(4)内に配置されている接触平面(A)と、
を具備し、
前記リングセクション(4)は、前記ウェハ(3)の収容によって、前記ウェハとともに前記流体(9)を収容するための収容スペース(8)を形成することを特徴とする、収容具。 - 前記周壁(7)は前記ウェハ(3)の周縁(3k)に従った輪郭をもつことを特徴とする、請求項1に記載の収容具。
- 前記上縁(5)によって形成される前記接触平面(A)とは異なる、特に前記接触平面(A)に平行なオーバーフロー平面(C)を呈することを特徴とする、請求項1に記載の収容具。
- 前記接触平面(A)と前記オーバーフロー平面(C)との距離(D)は、収容するウェハ(3)の厚さdよりも大きいことを特徴とする、請求項3に記載の収容具。
- 前記ウェハ(3)を収容するために、前記上縁(5)および前記周壁(7)によって形成される収容開口(10)を呈することを特徴とする、請求項1に記載の収容具。
- 少なくとも部分的に、
前記周壁(7)、および/または
前記凹み(6)、または
前記凹み(6)に設けられる少なくとも1つの収容用突起(11)
によって形成される載置面(2)を呈することを特徴とする、請求項1に記載の収容具。 - 前記載置面(2)は前記接触面(3a)の50%未満、特に前記接触面(3a)の25%未満、好ましくは前記接触面(3a)の10%未満として構成されることを特徴とする、請求項6に記載の収容具。
- 前記リングセクション(4)は周方向に包囲されて構成されていることを特徴とする、請求項1に記載の収容具。
- 前記凹み(6)につながる接触エレメント(12)が設けられ、特に筋交いの形態で設けられ、好ましくは前記収容具(1)の中心に収束することを特徴とする、請求項1に記載の収容具。
- 前記ウェハ(3)を回転方向(R)に固定するために、前記周壁(7)に少なくとも1つの突起(13)が設けられていることを特徴とする、請求項1に記載の収容具。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2012/066204 WO2014081424A1 (en) | 2012-11-21 | 2012-11-21 | Accommodating device for accommodation and mounting of a wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2016501445A true JP2016501445A (ja) | 2016-01-18 |
Family
ID=50776446
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015544041A Pending JP2016501445A (ja) | 2012-11-21 | 2012-11-21 | ウェハの収容および載置用の収容具 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20150270155A1 (ja) |
EP (1) | EP2923376A4 (ja) |
JP (1) | JP2016501445A (ja) |
CN (1) | CN104718608A (ja) |
SG (1) | SG2014013064A (ja) |
WO (1) | WO2014081424A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7541005B2 (ja) | 2018-12-03 | 2024-08-27 | アプライド マテリアルズ インコーポレイテッド | チャックとアーク放電に関する性能が改良された静電チャック設計 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10475627B2 (en) * | 2016-03-25 | 2019-11-12 | Lam Research Corporation | Carrier ring wall for reduction of back-diffusion of reactive species and suppression of local parasitic plasma ignition |
CN112563164B (zh) * | 2020-11-25 | 2022-07-12 | 鑫天虹(厦门)科技有限公司 | 晶片预清洁机台 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6052622U (ja) * | 1983-09-19 | 1985-04-13 | 関西日本電気株式会社 | 半導体製造装置 |
JPH09173945A (ja) * | 1995-12-25 | 1997-07-08 | Dainippon Screen Mfg Co Ltd | 回転式基板処理装置 |
JP2008072122A (ja) * | 2006-09-15 | 2008-03-27 | Applied Materials Inc | オートドープおよび裏面欠陥が減少したエピタキシャル堆積用のウェーハ処理ハードウェア |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5186238A (en) * | 1991-04-25 | 1993-02-16 | International Business Machines Corporation | Liquid film interface cooling chuck for semiconductor wafer processing |
US6280183B1 (en) * | 1998-04-01 | 2001-08-28 | Applied Materials, Inc. | Substrate support for a thermal processing chamber |
US6146504A (en) * | 1998-05-21 | 2000-11-14 | Applied Materials, Inc. | Substrate support and lift apparatus and method |
US7101253B2 (en) * | 2002-08-27 | 2006-09-05 | Applied Materials Inc. | Load cup for chemical mechanical polishing |
KR20040070008A (ko) * | 2003-01-29 | 2004-08-06 | 쿄세라 코포레이션 | 정전척 |
US7458762B2 (en) * | 2003-02-13 | 2008-12-02 | Samsung Electronics Co., Ltd. | Apparatus and method for positioning semiconductor substrate |
JP4019998B2 (ja) * | 2003-04-14 | 2007-12-12 | 信越半導体株式会社 | サセプタ及び気相成長装置 |
US20040226516A1 (en) * | 2003-05-13 | 2004-11-18 | Daniel Timothy J. | Wafer pedestal cover |
EP1699072B1 (en) * | 2003-12-03 | 2016-08-31 | Nikon Corporation | Exposure apparatus and exposure method |
CN101164156A (zh) * | 2005-08-05 | 2008-04-16 | 东京毅力科创株式会社 | 基板处理装置和用于该基板处理装置的基板载置台 |
US20070089836A1 (en) * | 2005-10-24 | 2007-04-26 | Applied Materials, Inc. | Semiconductor process chamber |
KR20070093493A (ko) * | 2006-03-14 | 2007-09-19 | 엘지이노텍 주식회사 | 서셉터 및 반도체 제조장치 |
US20070215049A1 (en) * | 2006-03-14 | 2007-09-20 | Applied Materials, Inc. | Transfer of wafers with edge grip |
US8021484B2 (en) * | 2006-03-30 | 2011-09-20 | Sumco Techxiv Corporation | Method of manufacturing epitaxial silicon wafer and apparatus therefor |
US7860379B2 (en) * | 2007-01-15 | 2010-12-28 | Applied Materials, Inc. | Temperature measurement and control of wafer support in thermal processing chamber |
US20080314319A1 (en) * | 2007-06-19 | 2008-12-25 | Memc Electronic Materials, Inc. | Susceptor for improving throughput and reducing wafer damage |
JP2009087989A (ja) * | 2007-09-27 | 2009-04-23 | Nuflare Technology Inc | エピタキシャル成長膜形成方法 |
US20100237470A1 (en) * | 2007-11-08 | 2010-09-23 | Sumco Corporation | Epitaxial wafer |
JP5241245B2 (ja) * | 2008-01-11 | 2013-07-17 | 株式会社日立ハイテクノロジーズ | 検査装置及び検査方法 |
JP5156446B2 (ja) * | 2008-03-21 | 2013-03-06 | 株式会社Sumco | 気相成長装置用サセプタ |
US8314369B2 (en) * | 2008-09-17 | 2012-11-20 | Applied Materials, Inc. | Managing thermal budget in annealing of substrates |
US8314371B2 (en) * | 2008-11-06 | 2012-11-20 | Applied Materials, Inc. | Rapid thermal processing chamber with micro-positioning system |
JP2010153769A (ja) * | 2008-11-19 | 2010-07-08 | Tokyo Electron Ltd | 基板位置検出装置、基板位置検出方法、成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体 |
JP5131240B2 (ja) * | 2009-04-09 | 2013-01-30 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP5359698B2 (ja) * | 2009-08-31 | 2013-12-04 | 豊田合成株式会社 | 化合物半導体の製造装置、化合物半導体の製造方法及び化合物半導体 |
DE202010015933U1 (de) * | 2009-12-01 | 2011-03-31 | Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont | Eine Randringanordnung für Plasmaätzkammern |
US9650726B2 (en) * | 2010-02-26 | 2017-05-16 | Applied Materials, Inc. | Methods and apparatus for deposition processes |
US8744250B2 (en) * | 2011-02-23 | 2014-06-03 | Applied Materials, Inc. | Edge ring for a thermal processing chamber |
JP5477314B2 (ja) * | 2011-03-04 | 2014-04-23 | 信越半導体株式会社 | サセプタ及びこれを用いたエピタキシャルウェーハの製造方法 |
US20130025538A1 (en) * | 2011-07-27 | 2013-01-31 | Applied Materials, Inc. | Methods and apparatus for deposition processes |
US8865602B2 (en) * | 2012-09-28 | 2014-10-21 | Applied Materials, Inc. | Edge ring lip |
KR101496572B1 (ko) * | 2012-10-16 | 2015-02-26 | 주식회사 엘지실트론 | 에피택셜 성장용 서셉터 및 에피택셜 성장방법 |
JP6234674B2 (ja) * | 2012-12-13 | 2017-11-22 | 株式会社Screenホールディングス | 熱処理装置 |
US20140273460A1 (en) * | 2013-03-13 | 2014-09-18 | Applied Materials, Inc. | Passive control for through silicon via tilt in icp chamber |
JP5602903B2 (ja) * | 2013-03-14 | 2014-10-08 | アプライド マテリアルズ インコーポレイテッド | エピタキシャル成長による成膜方法、および、エピタキシャル成長装置 |
CN112053991B (zh) * | 2014-05-21 | 2022-04-15 | 应用材料公司 | 热处理基座 |
TWI734668B (zh) * | 2014-06-23 | 2021-08-01 | 美商應用材料股份有限公司 | 在epi腔室中的基材熱控制 |
JP6296299B2 (ja) * | 2014-09-02 | 2018-03-20 | パナソニックIpマネジメント株式会社 | プラズマ処理装置およびプラズマ処理方法 |
US10658222B2 (en) * | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
JP6320945B2 (ja) * | 2015-01-30 | 2018-05-09 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
-
2012
- 2012-11-21 EP EP12868925.4A patent/EP2923376A4/en not_active Withdrawn
- 2012-11-21 JP JP2015544041A patent/JP2016501445A/ja active Pending
- 2012-11-21 SG SG2014013064A patent/SG2014013064A/en unknown
- 2012-11-21 WO PCT/US2012/066204 patent/WO2014081424A1/en active Application Filing
- 2012-11-21 CN CN201280076528.6A patent/CN104718608A/zh active Pending
- 2012-11-21 US US14/435,961 patent/US20150270155A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6052622U (ja) * | 1983-09-19 | 1985-04-13 | 関西日本電気株式会社 | 半導体製造装置 |
JPH09173945A (ja) * | 1995-12-25 | 1997-07-08 | Dainippon Screen Mfg Co Ltd | 回転式基板処理装置 |
JP2008072122A (ja) * | 2006-09-15 | 2008-03-27 | Applied Materials Inc | オートドープおよび裏面欠陥が減少したエピタキシャル堆積用のウェーハ処理ハードウェア |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7541005B2 (ja) | 2018-12-03 | 2024-08-27 | アプライド マテリアルズ インコーポレイテッド | チャックとアーク放電に関する性能が改良された静電チャック設計 |
Also Published As
Publication number | Publication date |
---|---|
WO2014081424A1 (en) | 2014-05-30 |
EP2923376A4 (en) | 2016-06-22 |
EP2923376A1 (en) | 2015-09-30 |
US20150270155A1 (en) | 2015-09-24 |
SG2014013064A (en) | 2015-02-27 |
CN104718608A (zh) | 2015-06-17 |
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