JP2018056223A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 92
- 239000012530 fluid Substances 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims description 130
- 230000002093 peripheral effect Effects 0.000 claims description 26
- 238000000034 method Methods 0.000 abstract description 46
- 238000004140 cleaning Methods 0.000 abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 68
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 48
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- 238000001035 drying Methods 0.000 description 8
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- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
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- 229920006362 Teflon® Polymers 0.000 description 1
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- 230000000994 depressogenic effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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Abstract
Description
<1.1 基板処理装置1の構成>
図1は、実施形態に係る基板処理装置1を示す断面図である。基板処理装置1は、略円板状の半導体基板9(以下、単に「基板9」という。)に処理液を供給して基板9を1枚ずつ処理する枚葉式の装置である。図1では、基板処理装置1の一部の構成の断面には、平行斜線の付与を省略している(他の断面図においても同様)。
図5は、基板処理装置1における処理の流れの一例を示す図である。図6〜図8は、処理過程における基板処理装置1の断面図である。
以下、本実施形態の基板処理装置1および処理例の効果について説明する。
以上、本発明の実施の形態について説明したが、この発明はその趣旨を逸脱しない限りにおいて上述したもの以外に種々の変更を行うことが可能である。
9 基板
15 基板回転機構
91 上面
92 下面
141 基板支持部
181 上部ノズル
182 下部ノズル
211 底中央部
219 上面
219a 凹面
219b テーパ面
J1 中心軸
S1〜S7 ステップ
Claims (8)
- 基板を水平に保持する基板保持部と、
前記基板保持部に保持された前記基板の下面に対向する第1開口を有し、前記第1開口から前記下面に向けて流体を供給する第1供給部と、
前記基板保持部に保持された前記基板の下面と対向する上面を有する対向部と、
第2開口から前記上面のうち中央側で窪んだ凹面にリンス液を供給する第2供給部と、
を備え、
前記第1開口の高さが、前記凹面に供給された前記リンス液が前記対向部から溢れ出る際の該リンス液の液面の高さよりも高い、基板処理装置。 - 請求項1に記載の基板処理装置であって、
前記第2供給部は、前記基板保持部が前記基板を保持していない非保持期間中に前記凹面に前記リンス液を供給する、基板処理装置。 - 請求項1または請求項2に記載の基板処理装置であって、
前記第2供給部は、前記基板保持部が前記基板を保持している保持期間中に前記凹面に前記リンス液を供給し、
前記保持期間中に前記基板が保持される高さが前記液面の高さよりも高い、基板処理装置。 - 請求項3に記載の基板処理装置であって、
前記第1供給部が前記下面に向けて前記流体を供給する第1期間と、前記第2供給部が前記凹面に前記リンス液を供給する第2期間と、が重複する重複期間が存在する、基板処理装置。 - 請求項4に記載の基板処理装置であって、
前記重複期間において、前記第1供給部が前記下面に向けて前記リンス液と同種の処理液を供給する、基板処理装置。 - 請求項4に記載の基板処理装置であって、
前記重複期間において、前記第1供給部が前記下面に向けて前記リンス液とは異なる種類の処理液を供給する、基板処理装置。 - 請求項1から請求項6のいずれか1つの請求項に記載の基板処理装置であって、
前記基板保持部に保持された前記基板の前記下面に対向する第3開口を有し、前記第3開口から前記下面に向けてガスを供給する第3供給部、
をさらに備え、
前記第3開口の高さが前記液面の高さよりも高い、基板処理装置。 - 請求項1から請求項7のいずれか1つの請求項に記載の基板処理装置であって、
前記対向部の前記上面は、前記凹面よりも外周側において、外周縁部に向けて斜め下向きに傾斜したテーパ面をさらに有する、基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016187836A JP6797622B2 (ja) | 2016-09-27 | 2016-09-27 | 基板処理装置 |
TW106130160A TWI660791B (zh) | 2016-09-27 | 2017-09-04 | 基板處理裝置 |
US15/697,043 US10573523B2 (en) | 2016-09-27 | 2017-09-06 | Substrate processing device which performs processing on substrate |
KR1020170116625A KR102134946B1 (ko) | 2016-09-27 | 2017-09-12 | 기판 처리 장치 |
CN201710841302.5A CN107871687B (zh) | 2016-09-27 | 2017-09-18 | 基板处理装置 |
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JP2016187836A JP6797622B2 (ja) | 2016-09-27 | 2016-09-27 | 基板処理装置 |
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JP2018056223A true JP2018056223A (ja) | 2018-04-05 |
JP6797622B2 JP6797622B2 (ja) | 2020-12-09 |
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US (1) | US10573523B2 (ja) |
JP (1) | JP6797622B2 (ja) |
KR (1) | KR102134946B1 (ja) |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020095582A1 (ja) * | 2018-11-07 | 2020-05-14 | 株式会社Screenホールディングス | 処理カップユニットおよび基板処理装置 |
WO2020235438A1 (ja) * | 2019-05-23 | 2020-11-26 | 東京エレクトロン株式会社 | 基板処理方法 |
JPWO2021205994A1 (ja) * | 2020-04-10 | 2021-10-14 | ||
WO2023189894A1 (ja) * | 2022-03-29 | 2023-10-05 | 東京エレクトロン株式会社 | 基板処理装置、その検査方法、および基板処理システム |
Citations (8)
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JPH09232276A (ja) * | 1996-02-27 | 1997-09-05 | Dainippon Screen Mfg Co Ltd | 基板処理装置および方法 |
JPH10137664A (ja) * | 1996-11-15 | 1998-05-26 | Dainippon Screen Mfg Co Ltd | 回転式基板処理装置および処理方法 |
JPH1116872A (ja) * | 1997-06-19 | 1999-01-22 | Tokyo Electron Ltd | 処理装置及び処理方法 |
JP2005174961A (ja) * | 2003-12-05 | 2005-06-30 | Ebara Corp | 基板処理方法及び装置 |
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WO2021205994A1 (ja) * | 2020-04-10 | 2021-10-14 | 東京エレクトロン株式会社 | 基板処理方法、及び基板処理装置 |
CN115349163A (zh) * | 2020-04-10 | 2022-11-15 | 东京毅力科创株式会社 | 基板处理方法和基板处理装置 |
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US20180090332A1 (en) | 2018-03-29 |
CN107871687A (zh) | 2018-04-03 |
KR20180034233A (ko) | 2018-04-04 |
TWI660791B (zh) | 2019-06-01 |
CN107871687B (zh) | 2021-06-25 |
KR102134946B1 (ko) | 2020-07-16 |
TW201825191A (zh) | 2018-07-16 |
US10573523B2 (en) | 2020-02-25 |
JP6797622B2 (ja) | 2020-12-09 |
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