CN1956145B - 半导体处理室 - Google Patents

半导体处理室 Download PDF

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Publication number
CN1956145B
CN1956145B CN2006101507127A CN200610150712A CN1956145B CN 1956145 B CN1956145 B CN 1956145B CN 2006101507127 A CN2006101507127 A CN 2006101507127A CN 200610150712 A CN200610150712 A CN 200610150712A CN 1956145 B CN1956145 B CN 1956145B
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CN
China
Prior art keywords
substrate
substrate supports
roughness
metal
substrate support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006101507127A
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English (en)
Chinese (zh)
Other versions
CN1956145A (zh
Inventor
克雷格·迈特则尔
佩－奥夫·汉松
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Applied Materials Inc
Original Assignee
Applied Materials Inc
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Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN1956145A publication Critical patent/CN1956145A/zh
Application granted granted Critical
Publication of CN1956145B publication Critical patent/CN1956145B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN2006101507127A 2005-10-24 2006-10-24 半导体处理室 Expired - Fee Related CN1956145B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/258,345 2005-10-24
US11/258,345 US20070089836A1 (en) 2005-10-24 2005-10-24 Semiconductor process chamber

Publications (2)

Publication Number Publication Date
CN1956145A CN1956145A (zh) 2007-05-02
CN1956145B true CN1956145B (zh) 2013-09-11

Family

ID=37968117

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006101507127A Expired - Fee Related CN1956145B (zh) 2005-10-24 2006-10-24 半导体处理室

Country Status (7)

Country Link
US (1) US20070089836A1 (enExample)
EP (1) EP1940560A4 (enExample)
JP (1) JP2009513027A (enExample)
KR (2) KR20080071148A (enExample)
CN (1) CN1956145B (enExample)
TW (1) TWI382450B (enExample)
WO (1) WO2007050309A1 (enExample)

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JP5412759B2 (ja) * 2008-07-31 2014-02-12 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの保持具及びそのウェーハの製造方法
CN101660143B (zh) * 2008-08-28 2011-08-17 北京北方微电子基地设备工艺研究中心有限责任公司 平板加热器及等离子体加工设备
JP5655010B2 (ja) 2009-02-11 2015-01-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 非接触基板処理のための方法及び装置
KR101105697B1 (ko) * 2010-03-02 2012-01-17 주식회사 엘지실트론 반도체 제조 장치
US20130315895A1 (en) 2010-07-01 2013-11-28 Takeda Pharmaceutical Company Limited COMBINATION OF A cMET INHIBITOR AND AN ANTIBODY TO HGF AND/OR cMET
US20120148760A1 (en) * 2010-12-08 2012-06-14 Glen Eric Egami Induction Heating for Substrate Processing
DE102011007632B3 (de) * 2011-04-18 2012-02-16 Siltronic Ag Verfahren und Vorrichtung zum Abscheiden einer von Prozessgas stammenden Materialschicht auf einer Substratscheibe
US20130025538A1 (en) * 2011-07-27 2013-01-31 Applied Materials, Inc. Methods and apparatus for deposition processes
TWI505400B (zh) 2011-08-26 2015-10-21 Lg Siltron Inc 基座
TWI541928B (zh) * 2011-10-14 2016-07-11 晶元光電股份有限公司 晶圓載具
US9273408B2 (en) * 2012-09-12 2016-03-01 Globalfoundries Inc. Direct injection molded solder process for forming solder bumps on wafers
JP2016501445A (ja) * 2012-11-21 2016-01-18 イー・ヴィー グループ インコーポレイテッドＥＶ Ｇｒｏｕｐ Ｉｎｃ． ウェハの収容および載置用の収容具
US9123758B2 (en) * 2013-02-06 2015-09-01 Applied Materials, Inc. Gas injection apparatus and substrate process chamber incorporating same
US9799548B2 (en) * 2013-03-15 2017-10-24 Applied Materials, Inc. Susceptors for enhanced process uniformity and reduced substrate slippage
US9551070B2 (en) 2014-05-30 2017-01-24 Applied Materials, Inc. In-situ corrosion resistant substrate support coating
US20160056059A1 (en) * 2014-08-22 2016-02-25 Applied Materials, Inc. Component for semiconductor process chamber having surface treatment to reduce particle emission
US20160068996A1 (en) * 2014-09-05 2016-03-10 Applied Materials, Inc. Susceptor and pre-heat ring for thermal processing of substrates
ES2764299T3 (es) 2014-12-09 2020-06-02 Inst Nat Sante Rech Med Anticuerpos monoclonales humanos contra AXL
WO2016111747A1 (en) * 2015-01-09 2016-07-14 Applied Materials, Inc. Substrate transfer mechanisms
WO2016135041A1 (en) 2015-02-26 2016-09-01 INSERM (Institut National de la Santé et de la Recherche Médicale) Fusion proteins and antibodies comprising thereof for promoting apoptosis
JP7008509B2 (ja) * 2015-05-27 2022-02-10 アプライド マテリアルズ インコーポレイテッド 高成長率のｅｐｉチャンバのための遮熱リング
JP6435992B2 (ja) * 2015-05-29 2018-12-12 株式会社Sumco エピタキシャル成長装置、エピタキシャルウェーハの製造方法およびエピタキシャル成長装置用リフトピン
US20170076972A1 (en) * 2015-09-15 2017-03-16 Veeco Instruments Inc. Planetary wafer carriers
KR102632725B1 (ko) 2016-03-17 2024-02-05 에이에스엠 아이피 홀딩 비.브이. 기판 지지 플레이트 및 이를 포함하는 박막 증착 장치 및 박막 증착 방법
CN107201507B (zh) * 2016-03-17 2019-09-17 Asm知识产权私人控股有限公司 衬底支撑板和包含其的薄膜沉积设备
KR102040378B1 (ko) * 2016-12-20 2019-11-05 주식회사 티씨케이 지그를 이용한 반도체 제조용 부품의 제조방법 및 제조장치
US10629416B2 (en) * 2017-01-23 2020-04-21 Infineon Technologies Ag Wafer chuck and processing arrangement
US11018047B2 (en) * 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
JP7329960B2 (ja) * 2019-05-14 2023-08-21 東京エレクトロン株式会社 載置台およびプラズマ処理装置
CN111501042B (zh) * 2020-06-02 2023-09-01 海南师范大学 一种边发射半导体激光芯片腔面镀膜夹具
US12211734B2 (en) * 2021-03-12 2025-01-28 Applied Materials, Inc. Lift pin mechanism
US20240014065A1 (en) * 2022-07-08 2024-01-11 Applied Materials, Inc. Flat susceptor with grid pattern and venting grooves on surface thereof
EP4335951A1 (de) 2022-09-08 2024-03-13 Siltronic AG Suszeptor mit austauschbaren auflageelementen

Citations (2)

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US5910221A (en) * 1997-06-18 1999-06-08 Applied Materials, Inc. Bonded silicon carbide parts in a plasma reactor
US6001756A (en) * 1996-02-29 1999-12-14 Bridgestone Corporation Process for making a silicon carbide sintered body

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US6001756A (en) * 1996-02-29 1999-12-14 Bridgestone Corporation Process for making a silicon carbide sintered body
US5910221A (en) * 1997-06-18 1999-06-08 Applied Materials, Inc. Bonded silicon carbide parts in a plasma reactor

Also Published As

Publication number Publication date
JP2009513027A (ja) 2009-03-26
CN1956145A (zh) 2007-05-02
TW200717593A (en) 2007-05-01
KR20110046579A (ko) 2011-05-04
TWI382450B (zh) 2013-01-11
US20070089836A1 (en) 2007-04-26
KR20080071148A (ko) 2008-08-01
EP1940560A1 (en) 2008-07-09
WO2007050309A1 (en) 2007-05-03
EP1940560A4 (en) 2010-09-15

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C06 Publication
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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130911

Termination date: 20211024

CF01 Termination of patent right due to non-payment of annual fee