JP2009120946A - 成膜方法および発光装置の作製方法 - Google Patents

成膜方法および発光装置の作製方法 Download PDF

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Publication number
JP2009120946A
JP2009120946A JP2008271476A JP2008271476A JP2009120946A JP 2009120946 A JP2009120946 A JP 2009120946A JP 2008271476 A JP2008271476 A JP 2008271476A JP 2008271476 A JP2008271476 A JP 2008271476A JP 2009120946 A JP2009120946 A JP 2009120946A
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Prior art keywords
light
substrate
layer
deposition
shadow mask
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JP2008271476A
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English (en)
Japanese (ja)
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JP2009120946A5 (enExample
Inventor
Yoshiharu Hirakata
吉晴 平形
Shunpei Yamazaki
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008271476A priority Critical patent/JP2009120946A/ja
Publication of JP2009120946A publication Critical patent/JP2009120946A/ja
Publication of JP2009120946A5 publication Critical patent/JP2009120946A5/ja
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/048Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/18Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2008271476A 2007-10-23 2008-10-22 成膜方法および発光装置の作製方法 Withdrawn JP2009120946A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008271476A JP2009120946A (ja) 2007-10-23 2008-10-22 成膜方法および発光装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007274900 2007-10-23
JP2008271476A JP2009120946A (ja) 2007-10-23 2008-10-22 成膜方法および発光装置の作製方法

Publications (2)

Publication Number Publication Date
JP2009120946A true JP2009120946A (ja) 2009-06-04
JP2009120946A5 JP2009120946A5 (enExample) 2011-11-10

Family

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JP2008271476A Withdrawn JP2009120946A (ja) 2007-10-23 2008-10-22 成膜方法および発光装置の作製方法

Country Status (5)

Country Link
US (1) US20090104721A1 (enExample)
JP (1) JP2009120946A (enExample)
KR (1) KR20090041316A (enExample)
CN (1) CN101691652A (enExample)
TW (1) TWI500787B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011001596A1 (ja) * 2009-07-03 2011-01-06 シャープ株式会社 有機層の形成方法、有機電界発光素子の製造方法、有機電界発光素子、及び有機電界発光表示装置
JP2012023026A (ja) * 2010-07-12 2012-02-02 Samsung Mobile Display Co Ltd 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法
WO2012053532A1 (ja) * 2010-10-20 2012-04-26 株式会社アルバック 有機膜形成装置及び有機膜形成方法
US9627619B2 (en) 2014-09-03 2017-04-18 Samsung Display Co., Ltd. Thin film forming apparatus and thin film forming method using the same

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KR101689519B1 (ko) * 2007-12-26 2016-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판, 증착용 기판의 제조방법, 및 발광장치의 제조방법
US8080811B2 (en) 2007-12-28 2011-12-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing evaporation donor substrate and light-emitting device
WO2009099002A1 (en) 2008-02-04 2009-08-13 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing light-emitting device
WO2009107548A1 (en) * 2008-02-29 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
JP5416987B2 (ja) * 2008-02-29 2014-02-12 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
US8182863B2 (en) * 2008-03-17 2012-05-22 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
KR101629637B1 (ko) * 2008-05-29 2016-06-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막방법 및 발광장치의 제조방법
SG10201707064RA (en) * 2009-09-07 2017-10-30 Semiconductor Energy Lab Light-emitting element, light-emitting device, lighting device, and electronic device
WO2011125570A1 (ja) * 2010-03-31 2011-10-13 東レ株式会社 転写用ドナー基板、デバイスの製造方法および有機el素子
JP5559656B2 (ja) * 2010-10-14 2014-07-23 大日本スクリーン製造株式会社 熱処理装置および熱処理方法
JP5298244B2 (ja) * 2010-10-19 2013-09-25 シャープ株式会社 蒸着装置
CN104862669B (zh) * 2010-12-16 2018-05-22 潘重光 任意尺寸底板及显示屏的气相沉积荫罩板系统及其方法
KR102112440B1 (ko) 2011-02-16 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자
TWI486470B (zh) * 2011-03-22 2015-06-01 Au Optronics Corp 蒸鍍設備
EP2584062A1 (de) * 2011-10-19 2013-04-24 Heraeus Materials Technology GmbH & Co. KG Sputtertarget und seine Verwendung
EP2781296B1 (de) * 2013-03-21 2020-10-21 Corning Laser Technologies GmbH Vorrichtung und verfahren zum ausschneiden von konturen aus flächigen substraten mittels laser
KR20150007740A (ko) * 2013-07-12 2015-01-21 삼성디스플레이 주식회사 전사용 도너 기판 및 유기 발광 표시 장치의 제조 방법
US11556039B2 (en) 2013-12-17 2023-01-17 Corning Incorporated Electrochromic coated glass articles and methods for laser processing the same
US9517963B2 (en) 2013-12-17 2016-12-13 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
TWI570982B (zh) * 2013-12-31 2017-02-11 昆山工研院新型平板顯示技術中心有限公司 An organic light emitting display device and a top emission organic light emitting diode device with improved viewing angle characteristics
US20170009332A1 (en) * 2014-03-12 2017-01-12 Advantech Global, Ltd Small mask tiling for larger area depositions
KR102445217B1 (ko) 2014-07-08 2022-09-20 코닝 인코포레이티드 재료를 레이저 가공하는 방법 및 장치
TWI659793B (zh) 2014-07-14 2019-05-21 美商康寧公司 用於使用可調整雷射束焦線來處理透明材料的系統及方法
CN105679967B (zh) * 2014-11-18 2018-06-26 昆山国显光电有限公司 掩膜板、制备有机发光显示装置的方法
CN104362170B (zh) * 2014-11-28 2017-04-12 京东方科技集团股份有限公司 一种有机电致发光显示器件、其驱动方法及相关装置
DE102015101932A1 (de) 2015-02-11 2016-08-25 Von Ardenne Gmbh Verfahren und Vorrichtung zur strukturierten Beschichtung von Substraten
EP3848334A1 (en) 2015-03-24 2021-07-14 Corning Incorporated Alkaline earth boro-aluminosilicate glass article with laser cut edge
CN104911548B (zh) * 2015-06-30 2017-05-03 合肥鑫晟光电科技有限公司 一种真空蒸镀装置及蒸镀方法
US11186060B2 (en) 2015-07-10 2021-11-30 Corning Incorporated Methods of continuous fabrication of holes in flexible substrate sheets and products relating to the same
CN105483619B (zh) * 2016-01-26 2018-01-02 京东方科技集团股份有限公司 移动靶镀膜装置及镀膜方法
MY194570A (en) 2016-05-06 2022-12-02 Corning Inc Laser cutting and removal of contoured shapes from transparent substrates
CN109803786B (zh) 2016-09-30 2021-05-07 康宁股份有限公司 使用非轴对称束斑对透明工件进行激光加工的设备和方法
JP7066701B2 (ja) 2016-10-24 2022-05-13 コーニング インコーポレイテッド シート状ガラス基体のレーザに基づく加工のための基体処理ステーション
CN111092171B (zh) * 2018-10-23 2022-08-16 宸鸿光电科技股份有限公司 有机发光二极管结构的形成方法

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JPH1154275A (ja) * 1997-06-06 1999-02-26 Eastman Kodak Co 薄膜トランジスタ配列基板上のフルカラー有機エレクトロルミネセンス表示配列にパターン化された有機層
JP2003073804A (ja) * 2001-08-30 2003-03-12 Sony Corp 成膜方法および成膜装置
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JP2003073804A (ja) * 2001-08-30 2003-03-12 Sony Corp 成膜方法および成膜装置
JP2004103341A (ja) * 2002-09-09 2004-04-02 Matsushita Electric Ind Co Ltd 有機エレクトロルミネッセンス素子の製造方法
JP2004296201A (ja) * 2003-03-26 2004-10-21 Tohoku Pioneer Corp 蒸着源、蒸着装置、有機el素子、有機el素子の製造方法
JP2005120418A (ja) * 2003-10-16 2005-05-12 Stanley Electric Co Ltd 蒸着装置及び薄膜形成方法
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011001596A1 (ja) * 2009-07-03 2011-01-06 シャープ株式会社 有機層の形成方法、有機電界発光素子の製造方法、有機電界発光素子、及び有機電界発光表示装置
US8535108B2 (en) 2009-07-03 2013-09-17 Sharp Kabushiki Kaisha Formation method of an organic layer, manufacturing method of an organic electroluminescent element, organic electroluminescent element, and organic electroluminescent display device
JP2012023026A (ja) * 2010-07-12 2012-02-02 Samsung Mobile Display Co Ltd 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法
WO2012053532A1 (ja) * 2010-10-20 2012-04-26 株式会社アルバック 有機膜形成装置及び有機膜形成方法
JP5619175B2 (ja) * 2010-10-20 2014-11-05 株式会社アルバック 有機膜形成方法
US9627619B2 (en) 2014-09-03 2017-04-18 Samsung Display Co., Ltd. Thin film forming apparatus and thin film forming method using the same

Also Published As

Publication number Publication date
TWI500787B (zh) 2015-09-21
CN101691652A (zh) 2010-04-07
TW200932930A (en) 2009-08-01
US20090104721A1 (en) 2009-04-23
KR20090041316A (ko) 2009-04-28

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