JP2009070948A - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
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- JP2009070948A JP2009070948A JP2007236249A JP2007236249A JP2009070948A JP 2009070948 A JP2009070948 A JP 2009070948A JP 2007236249 A JP2007236249 A JP 2007236249A JP 2007236249 A JP2007236249 A JP 2007236249A JP 2009070948 A JP2009070948 A JP 2009070948A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 63
- 239000003990 capacitor Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 14
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 72
- 238000000137 annealing Methods 0.000 abstract description 27
- 230000008859 change Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 70
- 239000007789 gas Substances 0.000 description 20
- 230000007246 mechanism Effects 0.000 description 12
- 239000011521 glass Substances 0.000 description 10
- 229910052724 xenon Inorganic materials 0.000 description 10
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
【解決手段】コンデンサ93と、コイル94と、フラッシュランプFLと、IGBT等のスイッチング素子96とが直列に接続されている。スイッチング素子96のゲートには制御部3からパルス信号を出力することができる。パルス信号の波形は、入力部33からの入力内容に従って波形設定部32が設定する。コンデンサ93に電荷が蓄積された状態にてスイッチング素子96のゲートにパルス信号を出力することによってフラッシュランプFLを間欠的に発光させる。スイッチング素子96に印加するパルス信号の波形を変更することによって、フラッシュランプFLに流れる電流の波形が変化して発光態様も変化し、半導体ウェハーの温度プロファイルも変化することとなる。
【選択図】図6
Description
3 制御部
4 保持部昇降機構
5 ランプハウス
6 チャンバー
7 保持部
31 パルス発生器
32 波形設定部
33 入力部
60 上部開口
61 チャンバー窓
65 熱処理空間
71 ホットプレート
72 サセプタ
91 トリガー電極
92 ガラス管
93 コンデンサ
94 コイル
96 スイッチング素子
97 トリガー回路
FL フラッシュランプ
W 半導体ウェハー
Claims (4)
- 基板に対して光を照射することによって該基板を加熱する熱処理装置であって、
基板を保持する保持手段と、
前記保持手段に保持された基板に光を照射するフラッシュランプと、
1以上のパルスを含むパルス信号を発生するパルス信号発生手段と、
を備え、
コンデンサと、コイルと、前記フラッシュランプと、スイッチング素子とを直列に接続し、
前記フラッシュランプを発光させる際に、前記パルス信号発生手段が前記スイッチング素子にパルス信号を出力することによって前記スイッチング素子の駆動を制御することを特徴とする熱処理装置。 - 請求項1記載の熱処理装置において、
前記パルス信号発生手段が発生するパルス信号の波形を設定する波形設定手段をさらに備えることを特徴とする熱処理装置。 - 請求項1または請求項2に記載の熱処理装置において、
前記スイッチング素子はトランジスタであり、
前記パルス信号発生手段は、前記トランジスタのゲートにパルス信号を出力することを特徴とする熱処理装置。 - 請求項3記載の熱処理装置において、
前記トランジスタは絶縁ゲートバイポーラトランジスタであることを特徴とする熱処理装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007236249A JP5465373B2 (ja) | 2007-09-12 | 2007-09-12 | 熱処理装置 |
US12/183,159 US8050546B2 (en) | 2007-09-12 | 2008-07-31 | Heat treatment apparatus heating substrate by irradiation with light |
TW097129396A TWI369740B (en) | 2007-09-12 | 2008-08-01 | Heat treatment apparatus |
CN2008102134537A CN101388334B (zh) | 2007-09-12 | 2008-09-04 | 热处理装置 |
KR1020080088072A KR101013234B1 (ko) | 2007-09-12 | 2008-09-08 | 열처리장치 |
US13/236,900 US8447177B2 (en) | 2007-09-12 | 2011-09-20 | Heat treatment apparatus heating substrate by irradiation with light |
US13/848,526 US8781309B2 (en) | 2007-09-12 | 2013-03-21 | Heat treatment apparatus heating substrate by irradiation with light |
US14/228,380 US9295107B2 (en) | 2007-09-12 | 2014-03-28 | Heat treatment apparatus heating substrate by irradiation with light |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007236249A JP5465373B2 (ja) | 2007-09-12 | 2007-09-12 | 熱処理装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010001899A Division JP5238729B2 (ja) | 2010-01-07 | 2010-01-07 | 熱処理方法および熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009070948A true JP2009070948A (ja) | 2009-04-02 |
JP5465373B2 JP5465373B2 (ja) | 2014-04-09 |
Family
ID=40431925
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007236249A Active JP5465373B2 (ja) | 2007-09-12 | 2007-09-12 | 熱処理装置 |
Country Status (5)
Country | Link |
---|---|
US (4) | US8050546B2 (ja) |
JP (1) | JP5465373B2 (ja) |
KR (1) | KR101013234B1 (ja) |
CN (1) | CN101388334B (ja) |
TW (1) | TWI369740B (ja) |
Cited By (23)
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JP2010177496A (ja) * | 2009-01-30 | 2010-08-12 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
JP2010192692A (ja) * | 2009-02-18 | 2010-09-02 | Dainippon Screen Mfg Co Ltd | 熱処理方法 |
JP2010283163A (ja) * | 2009-06-04 | 2010-12-16 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
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US20130224967A1 (en) | 2013-08-29 |
US20090067823A1 (en) | 2009-03-12 |
TWI369740B (en) | 2012-08-01 |
US8050546B2 (en) | 2011-11-01 |
KR101013234B1 (ko) | 2011-02-08 |
KR20090027579A (ko) | 2009-03-17 |
JP5465373B2 (ja) | 2014-04-09 |
US8781309B2 (en) | 2014-07-15 |
US8447177B2 (en) | 2013-05-21 |
US20140212117A1 (en) | 2014-07-31 |
CN101388334B (zh) | 2011-10-19 |
US9295107B2 (en) | 2016-03-22 |
CN101388334A (zh) | 2009-03-18 |
US20120008926A1 (en) | 2012-01-12 |
TW200926302A (en) | 2009-06-16 |
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