JP2009049385A - 液晶表示装置 - Google Patents

液晶表示装置 Download PDF

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Publication number
JP2009049385A
JP2009049385A JP2008182189A JP2008182189A JP2009049385A JP 2009049385 A JP2009049385 A JP 2009049385A JP 2008182189 A JP2008182189 A JP 2008182189A JP 2008182189 A JP2008182189 A JP 2008182189A JP 2009049385 A JP2009049385 A JP 2009049385A
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JP
Japan
Prior art keywords
liquid crystal
semiconductor film
film
crystal display
buffer layer
Prior art date
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Withdrawn
Application number
JP2008182189A
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English (en)
Japanese (ja)
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JP2009049385A5 (OSRAM
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008182189A priority Critical patent/JP2009049385A/ja
Publication of JP2009049385A publication Critical patent/JP2009049385A/ja
Publication of JP2009049385A5 publication Critical patent/JP2009049385A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008182189A 2007-07-20 2008-07-14 液晶表示装置 Withdrawn JP2009049385A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008182189A JP2009049385A (ja) 2007-07-20 2008-07-14 液晶表示装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007190219 2007-07-20
JP2008182189A JP2009049385A (ja) 2007-07-20 2008-07-14 液晶表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014076852A Division JP2014149545A (ja) 2007-07-20 2014-04-03 液晶表示装置

Publications (2)

Publication Number Publication Date
JP2009049385A true JP2009049385A (ja) 2009-03-05
JP2009049385A5 JP2009049385A5 (OSRAM) 2011-08-18

Family

ID=40264554

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2008182189A Withdrawn JP2009049385A (ja) 2007-07-20 2008-07-14 液晶表示装置
JP2014076852A Withdrawn JP2014149545A (ja) 2007-07-20 2014-04-03 液晶表示装置
JP2015193564A Expired - Fee Related JP6117884B2 (ja) 2007-07-20 2015-09-30 液晶表示装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2014076852A Withdrawn JP2014149545A (ja) 2007-07-20 2014-04-03 液晶表示装置
JP2015193564A Expired - Fee Related JP6117884B2 (ja) 2007-07-20 2015-09-30 液晶表示装置

Country Status (5)

Country Link
US (3) US7940345B2 (OSRAM)
JP (3) JP2009049385A (OSRAM)
KR (1) KR101581171B1 (OSRAM)
CN (4) CN103066113B (OSRAM)
TW (3) TWI464510B (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010239120A (ja) * 2009-03-09 2010-10-21 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ
WO2013061383A1 (ja) * 2011-10-28 2013-05-02 パナソニック株式会社 薄膜半導体装置及びその製造方法
JP2019024145A (ja) * 2011-12-27 2019-02-14 株式会社半導体エネルギー研究所 ゲート絶縁膜の作製方法、及び半導体装置の作製方法
JP2020102636A (ja) * 2009-07-17 2020-07-02 株式会社半導体エネルギー研究所 表示装置

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US8921858B2 (en) * 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9176353B2 (en) * 2007-06-29 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US7738050B2 (en) * 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
TWI464510B (zh) * 2007-07-20 2014-12-11 Semiconductor Energy Lab 液晶顯示裝置
JP2009049384A (ja) * 2007-07-20 2009-03-05 Semiconductor Energy Lab Co Ltd 発光装置
US8330887B2 (en) * 2007-07-27 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US8101444B2 (en) 2007-08-17 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101484297B1 (ko) * 2007-08-31 2015-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 표시장치의 제작방법
JP5395384B2 (ja) * 2007-09-07 2014-01-22 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
TWI521712B (zh) * 2007-12-03 2016-02-11 半導體能源研究所股份有限公司 薄膜電晶體，包括該薄膜電晶體的顯示裝置，和其製造方法
KR101889287B1 (ko) 2008-09-19 2018-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
JP5361651B2 (ja) 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20100067612A (ko) * 2008-12-11 2010-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터 및 표시 장치
KR101667622B1 (ko) * 2008-12-11 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터 및 표시 장치
TWI501319B (zh) 2008-12-26 2015-09-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8704216B2 (en) 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5558916B2 (ja) * 2009-06-26 2014-07-23 キヤノン株式会社 光電変換装置の製造方法
US8344378B2 (en) * 2009-06-26 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
CN110824800B (zh) * 2009-10-16 2022-07-26 株式会社半导体能源研究所 显示设备
KR101803554B1 (ko) 2009-10-21 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작방법
KR101678687B1 (ko) * 2009-12-11 2016-11-23 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판의 제조방법
JP5752447B2 (ja) * 2010-03-15 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
JP5752446B2 (ja) * 2010-03-15 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
KR101630022B1 (ko) * 2010-12-27 2016-06-13 샤프 가부시키가이샤 반도체 장치 및 그 제조 방법
WO2012111427A1 (en) * 2011-02-16 2012-08-23 Semiconductor Energy Laboratory Co., Ltd. Display device
JP6004308B2 (ja) * 2011-08-12 2016-10-05 Ｎｌｔテクノロジー株式会社 薄膜デバイス
US9660092B2 (en) 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
KR101894329B1 (ko) * 2011-10-14 2018-09-04 엘지디스플레이 주식회사 박막 트랜지스터 및 그 제조방법
CN102629611B (zh) * 2012-03-29 2015-01-21 京东方科技集团股份有限公司 一种显示装置、阵列基板及其制作方法
KR20150007000A (ko) 2013-07-10 2015-01-20 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 박막 트랜지스터 기판의 제조 방법
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JP2015179247A (ja) 2013-10-22 2015-10-08 株式会社半導体エネルギー研究所 表示装置
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CN103760721A (zh) * 2014-01-08 2014-04-30 北京京东方光电科技有限公司 薄膜晶体管阵列基板及其制备方法、显示装置
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