JP2008535243A5 - - Google Patents
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- Publication number
- JP2008535243A5 JP2008535243A5 JP2008504042A JP2008504042A JP2008535243A5 JP 2008535243 A5 JP2008535243 A5 JP 2008535243A5 JP 2008504042 A JP2008504042 A JP 2008504042A JP 2008504042 A JP2008504042 A JP 2008504042A JP 2008535243 A5 JP2008535243 A5 JP 2008535243A5
- Authority
- JP
- Japan
- Prior art keywords
- upstream
- nitrogen
- annealing
- oxynitride film
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 87
- 239000007789 gas Substances 0.000 claims 53
- 238000011144 upstream manufacturing Methods 0.000 claims 51
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 44
- 238000000354 decomposition reaction Methods 0.000 claims 36
- 238000000137 annealing Methods 0.000 claims 34
- 239000000203 mixture Substances 0.000 claims 29
- 230000005855 radiation Effects 0.000 claims 26
- 238000005121 nitriding Methods 0.000 claims 24
- 229910052757 nitrogen Inorganic materials 0.000 claims 24
- 229910052760 oxygen Inorganic materials 0.000 claims 20
- 239000001301 oxygen Substances 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 11
- 229910052743 krypton Inorganic materials 0.000 claims 9
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 9
- 229910052786 argon Inorganic materials 0.000 claims 8
- 229910052734 helium Inorganic materials 0.000 claims 8
- 229910052754 neon Inorganic materials 0.000 claims 8
- 150000002831 nitrogen free-radicals Chemical class 0.000 claims 8
- 229910052724 xenon Inorganic materials 0.000 claims 8
- -1 oxygen radicals Chemical class 0.000 claims 7
- 230000008878 coupling Effects 0.000 claims 5
- 238000010168 coupling process Methods 0.000 claims 5
- 238000005859 coupling reaction Methods 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 238000004140 cleaning Methods 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 claims 1
- 238000006731 degradation reaction Methods 0.000 claims 1
- 230000006698 induction Effects 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000000746 purification Methods 0.000 claims 1
- 150000003254 radicals Chemical class 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/093,260 US7501352B2 (en) | 2005-03-30 | 2005-03-30 | Method and system for forming an oxynitride layer |
| US11/093,260 | 2005-03-30 | ||
| PCT/US2006/005418 WO2006107415A1 (en) | 2005-03-30 | 2006-02-16 | Method and system for forming an oxynitride layer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008535243A JP2008535243A (ja) | 2008-08-28 |
| JP2008535243A5 true JP2008535243A5 (enExample) | 2009-04-02 |
| JP4995807B2 JP4995807B2 (ja) | 2012-08-08 |
Family
ID=37073778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008504042A Expired - Fee Related JP4995807B2 (ja) | 2005-03-30 | 2006-02-16 | 酸窒化層を形成する方法及びシステム |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7501352B2 (enExample) |
| JP (1) | JP4995807B2 (enExample) |
| KR (1) | KR20080003383A (enExample) |
| CN (1) | CN101151718A (enExample) |
| TW (1) | TW200641997A (enExample) |
| WO (1) | WO2006107415A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3746968B2 (ja) * | 2001-08-29 | 2006-02-22 | 東京エレクトロン株式会社 | 絶縁膜の形成方法および形成システム |
| KR100887270B1 (ko) | 2004-10-28 | 2009-03-06 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
| KR20070110748A (ko) * | 2006-05-15 | 2007-11-20 | 주식회사 하이닉스반도체 | 커패시터 형성 방법 |
| JP2010021378A (ja) * | 2008-07-11 | 2010-01-28 | Tokyo Electron Ltd | シリコン酸窒化膜の形成方法および形成装置 |
| JP2012079785A (ja) * | 2010-09-30 | 2012-04-19 | Tokyo Electron Ltd | 絶縁膜の改質方法 |
| US20120083127A1 (en) * | 2010-09-30 | 2012-04-05 | Tokyo Electron Limited | Method for forming a pattern and a semiconductor device manufacturing method |
| CN111566780B (zh) * | 2018-01-15 | 2023-12-01 | 应用材料公司 | 添加氩至远程等离子体氧化 |
| KR102780020B1 (ko) * | 2020-04-06 | 2025-03-12 | 한국전기연구원 | 마이크로파 여기 플라즈마를 이용한 탄화규소 게이트 산화막 열처리 장치 |
| JP7612219B2 (ja) * | 2022-10-19 | 2025-01-14 | 株式会社 セルバック | 成膜方法および成膜システム |
Family Cites Families (53)
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| JPS6227573A (ja) | 1985-07-30 | 1987-02-05 | Yasuo Tarui | 光化学反応装置 |
| JPS62237729A (ja) | 1986-04-08 | 1987-10-17 | Toshiba Corp | シリコン酸化物のドライエツチング方法 |
| US4919077A (en) * | 1986-12-27 | 1990-04-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor producing apparatus |
| JPS63204616A (ja) | 1987-02-19 | 1988-08-24 | Fujitsu Ltd | 反応チヤンバ−の洗浄方法 |
| EP0299246A1 (en) | 1987-07-16 | 1989-01-18 | Texas Instruments Incorporated | Processing apparatus and method |
| JPH02308536A (ja) | 1989-05-23 | 1990-12-21 | Sony Corp | Ｅｃｒプラズマ装置とこれを用いた薄膜形成方法 |
| JP2814021B2 (ja) * | 1990-07-09 | 1998-10-22 | 三菱電機株式会社 | 半導体基板表面の処理方法 |
| JP2734197B2 (ja) | 1990-11-21 | 1998-03-30 | 富士電機株式会社 | 気相成長装置 |
| US5217559A (en) * | 1990-12-10 | 1993-06-08 | Texas Instruments Incorporated | Apparatus and method for in-situ deep ultraviolet photon-assisted semiconductor wafer processing |
| JPH04274317A (ja) | 1991-03-01 | 1992-09-30 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜形成方法およびその装置 |
| JPH0513756A (ja) | 1991-07-03 | 1993-01-22 | Matsushita Electric Ind Co Ltd | Ｍｉｓ型半導体装置およびその製造方法 |
| EP0661385A1 (en) | 1991-08-19 | 1995-07-05 | OHMI, Tadahiro | Method for forming oxide film |
| JP2989063B2 (ja) * | 1991-12-12 | 1999-12-13 | キヤノン株式会社 | 薄膜形成装置および薄膜形成方法 |
| US5215588A (en) * | 1992-01-17 | 1993-06-01 | Amtech Systems, Inc. | Photo-CVD system |
| JPH0729827A (ja) | 1993-07-13 | 1995-01-31 | Kawasaki Steel Corp | 半導体基板の製造方法および装置 |
| DE4425830C2 (de) | 1993-10-28 | 1996-08-08 | Daimler Benz Aerospace Ag | Aktivierbares energieabsorbierendes Bauteil |
| US5518542A (en) * | 1993-11-05 | 1996-05-21 | Tokyo Electron Limited | Double-sided substrate cleaning apparatus |
| JP3234091B2 (ja) * | 1994-03-10 | 2001-12-04 | 株式会社日立製作所 | 表面処理装置 |
| JPH07253677A (ja) * | 1994-03-16 | 1995-10-03 | Mitsubishi Electric Corp | 光オゾンアッシャ，光アッシング方法，及び半導体装置の製造方法 |
| US5454589A (en) * | 1994-08-18 | 1995-10-03 | Morton International, Inc. | Inflatable air cell protective device |
| JPH0878338A (ja) | 1994-09-05 | 1996-03-22 | Fujitsu Ltd | 半導体の製造装置 |
| US6013553A (en) * | 1997-07-24 | 2000-01-11 | Texas Instruments Incorporated | Zirconium and/or hafnium oxynitride gate dielectric |
| JP3500050B2 (ja) * | 1997-09-08 | 2004-02-23 | 東京エレクトロン株式会社 | 不純物除去装置、膜形成方法及び膜形成システム |
| JPH11150111A (ja) | 1997-11-19 | 1999-06-02 | Sony Corp | 成膜方法及び成膜装置 |
| US6187133B1 (en) * | 1998-05-29 | 2001-02-13 | Applied Materials, Inc. | Gas manifold for uniform gas distribution and photochemistry |
| JP2000031060A (ja) | 1998-07-10 | 2000-01-28 | Hitachi Cable Ltd | Ｉｉｉ−ｖ族化合物半導体気相エピタキシャル成長方法及び成長装置 |
| DE19835705A1 (de) | 1998-08-07 | 2000-02-10 | Bayerische Motoren Werke Ag | Karosserie für ein Fahrzeug |
| US6095085A (en) * | 1998-08-20 | 2000-08-01 | Micron Technology, Inc. | Photo-assisted remote plasma apparatus and method |
| US6274467B1 (en) * | 1999-06-04 | 2001-08-14 | International Business Machines Corporation | Dual work function gate conductors with self-aligned insulating cap |
| JP2001012917A (ja) | 1999-07-01 | 2001-01-19 | Nkk Corp | コイル位置検出装置 |
| DE10014868A1 (de) | 2000-03-24 | 2001-09-27 | Sms Demag Ag | Verfahren und Einrichtung zum Schmelztauchbeschichten von Metallsträngen, insbesondere von Stahlband |
| EP1275139B1 (en) * | 2000-04-17 | 2011-07-27 | Mattson Technology Inc. | Uv pretreatment process of ultra-thin oxynitride for formation of silicon nitride films |
| US6444592B1 (en) * | 2000-06-20 | 2002-09-03 | International Business Machines Corporation | Interfacial oxidation process for high-k gate dielectric process integration |
| JP4731694B2 (ja) * | 2000-07-21 | 2011-07-27 | 東京エレクトロン株式会社 | 半導体装置の製造方法および基板処理装置 |
| JP2002118477A (ja) | 2000-10-06 | 2002-04-19 | Vertex Standard Co Ltd | Ｓｓｂ送信機 |
| US6933248B2 (en) * | 2000-10-19 | 2005-08-23 | Texas Instruments Incorporated | Method for transistor gate dielectric layer with uniform nitrogen concentration |
| JP2002170825A (ja) | 2000-11-30 | 2002-06-14 | Nec Corp | 半導体装置及びｍｉｓ型半導体装置並びにその製造方法 |
| JP3916565B2 (ja) * | 2001-01-22 | 2007-05-16 | 東京エレクトロン株式会社 | 電子デバイス材料の製造方法 |
| US20020146914A1 (en) * | 2001-04-06 | 2002-10-10 | Kuo-Tai Huang | In-situ steam generation process for nitrided oxide |
| JP2002353995A (ja) | 2001-05-25 | 2002-12-06 | Nippon Telegr & Teleph Corp <Ntt> | 光アクセス通信方法、光アクセスネットワークシステム及びセンター側装置 |
| US6780719B2 (en) * | 2001-06-20 | 2004-08-24 | Texas Instruments Incorporated | Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures |
| US6426305B1 (en) * | 2001-07-03 | 2002-07-30 | International Business Machines Corporation | Patterned plasma nitridation for selective epi and silicide formation |
| JP4369091B2 (ja) * | 2001-07-18 | 2009-11-18 | 東京エレクトロン株式会社 | 基板処理方法 |
| SG152910A1 (en) * | 2001-12-07 | 2009-06-29 | Tokyo Electron Ltd | Nitriding method for insulation film, semiconductor device and production method for semiconductor device, substrate treating device and substrate treating method |
| JP4078370B2 (ja) | 2001-12-07 | 2008-04-23 | 東京エレクトロン株式会社 | 基板処理装置 |
| JP3770870B2 (ja) | 2001-12-07 | 2006-04-26 | 東京エレクトロン株式会社 | 基板処理方法 |
| US20030124873A1 (en) * | 2001-12-28 | 2003-07-03 | Guangcai Xing | Method of annealing an oxide film |
| JP4102072B2 (ja) | 2002-01-08 | 2008-06-18 | 株式会社東芝 | 半導体装置 |
| US6706643B2 (en) * | 2002-01-08 | 2004-03-16 | Mattson Technology, Inc. | UV-enhanced oxy-nitridation of semiconductor substrates |
| US6774040B2 (en) * | 2002-09-12 | 2004-08-10 | Applied Materials, Inc. | Apparatus and method for surface finishing a silicon film |
| AU2003291319A1 (en) * | 2002-11-08 | 2004-06-03 | Aviza Technology, Inc. | Nitridation of high-k dielectrics |
| US7087537B2 (en) * | 2004-03-15 | 2006-08-08 | Sharp Laboratories Of America, Inc. | Method for fabricating oxide thin films |
| US7235440B2 (en) * | 2003-07-31 | 2007-06-26 | Tokyo Electron Limited | Formation of ultra-thin oxide layers by self-limiting interfacial oxidation |
-
2005
- 2005-03-30 US US11/093,260 patent/US7501352B2/en not_active Expired - Fee Related
-
2006
- 2006-02-16 WO PCT/US2006/005418 patent/WO2006107415A1/en not_active Ceased
- 2006-02-16 JP JP2008504042A patent/JP4995807B2/ja not_active Expired - Fee Related
- 2006-02-16 KR KR1020077025080A patent/KR20080003383A/ko not_active Withdrawn
- 2006-02-16 CN CNA2006800108823A patent/CN101151718A/zh active Pending
- 2006-03-22 TW TW095109788A patent/TW200641997A/zh unknown
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