JP2008527714A5 - - Google Patents

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Publication number
JP2008527714A5
JP2008527714A5 JP2007550400A JP2007550400A JP2008527714A5 JP 2008527714 A5 JP2008527714 A5 JP 2008527714A5 JP 2007550400 A JP2007550400 A JP 2007550400A JP 2007550400 A JP2007550400 A JP 2007550400A JP 2008527714 A5 JP2008527714 A5 JP 2008527714A5
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JP
Japan
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region
cathode
dopant
junction
type
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JP2007550400A
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English (en)
Japanese (ja)
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JP5044818B2 (ja
JP2008527714A (ja
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Priority claimed from US10/905,486 external-priority patent/US7518215B2/en
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Publication of JP2008527714A publication Critical patent/JP2008527714A/ja
Publication of JP2008527714A5 publication Critical patent/JP2008527714A5/ja
Application granted granted Critical
Publication of JP5044818B2 publication Critical patent/JP5044818B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2007550400A 2005-01-06 2005-12-22 補償されたカソード・コンタクトを使用する１マスク超階段接合バラクタの形成方法 Expired - Fee Related JP5044818B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/905,486 US7518215B2 (en) 2005-01-06 2005-01-06 One mask hyperabrupt junction varactor using a compensated cathode contact
US10/905,486 2005-01-06
PCT/US2005/047085 WO2006073943A2 (en) 2005-01-06 2005-12-22 Method for forming a one mask hyperabrupt junction varactor using a compensated cathode contact

Publications (3)

Publication Number Publication Date
JP2008527714A JP2008527714A (ja) 2008-07-24
JP2008527714A5 true JP2008527714A5 (enExample) 2008-11-27
JP5044818B2 JP5044818B2 (ja) 2012-10-10

Family

ID=36639455

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007550400A Expired - Fee Related JP5044818B2 (ja) 2005-01-06 2005-12-22 補償されたカソード・コンタクトを使用する１マスク超階段接合バラクタの形成方法

Country Status (5)

Country Link
US (1) US7518215B2 (enExample)
EP (1) EP1839340B1 (enExample)
JP (1) JP5044818B2 (enExample)
CN (1) CN100539022C (enExample)
WO (1) WO2006073943A2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7525177B2 (en) * 2005-04-01 2009-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Controllable varactor within dummy substrate pattern
US20080149983A1 (en) * 2006-12-20 2008-06-26 International Business Machines Corporation Metal-oxide-semiconductor (mos) varactors and methods of forming mos varactors
US7692271B2 (en) * 2007-02-28 2010-04-06 International Business Machines Corporation Differential junction varactor
US7825441B2 (en) * 2007-06-25 2010-11-02 International Business Machines Corporation Junction field effect transistor with a hyperabrupt junction
US20090101988A1 (en) * 2007-10-18 2009-04-23 Texas Instruments Incorporated Bipolar transistors with resistors
US7696604B2 (en) * 2007-10-23 2010-04-13 International Business Machines Corporation Silicon germanium heterostructure barrier varactor
US7902606B2 (en) * 2008-01-11 2011-03-08 International Business Machines Corporation Double gate depletion mode MOSFET
US8338906B2 (en) * 2008-01-30 2012-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Schottky device
US7804119B2 (en) * 2008-04-08 2010-09-28 International Business Machines Corporation Device structures with a hyper-abrupt P-N junction, methods of forming a hyper-abrupt P-N junction, and design structures for an integrated circuit
US8232558B2 (en) * 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8796809B2 (en) * 2008-09-08 2014-08-05 Cree, Inc. Varactor diode with doped voltage blocking layer
US7821103B2 (en) * 2008-09-09 2010-10-26 Freescale Semiconductor, Inc. Counter-doped varactor structure and method
US8216890B2 (en) 2009-03-13 2012-07-10 International Business Machines Corporation Lateral hyperabrupt junction varactor diode in an SOI substrate
JP6186601B2 (ja) * 2013-01-16 2017-08-30 セイコーＮｐｃ株式会社 可変容量ダイオード
TWI751609B (zh) * 2019-07-17 2022-01-01 美商安托梅拉公司 設有含超晶格之突陡接面區之可變電容器及相關方法
TWI772839B (zh) * 2019-07-17 2022-08-01 美商安托梅拉公司 設有含分隔超晶格之突陡接面區之可變電容器及相關方法
US10937888B2 (en) 2019-07-17 2021-03-02 Atomera Incorporated Method for making a varactor with a hyper-abrupt junction region including spaced-apart superlattices
US10937868B2 (en) 2019-07-17 2021-03-02 Atomera Incorporated Method for making semiconductor devices with hyper-abrupt junction region including spaced-apart superlattices
US11183565B2 (en) 2019-07-17 2021-11-23 Atomera Incorporated Semiconductor devices including hyper-abrupt junction region including spaced-apart superlattices and related methods

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226648A (en) * 1979-03-16 1980-10-07 Bell Telephone Laboratories, Incorporated Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy
US4481487A (en) * 1981-08-14 1984-11-06 Texas Instruments Incorporated Monolithic microwave wide-band VCO
FR2592527B1 (fr) * 1985-12-31 1988-02-05 Thomson Csf Diode a capacite variable, a profil hyperabrupt et structure plane, et son procede de realisation
JPS6419779A (en) 1987-07-15 1989-01-23 Nec Corp Manufacture of hyperabrupt varactor diode
JPH02219279A (ja) * 1989-02-20 1990-08-31 Sanyo Electric Co Ltd 超階段型接合ダイオードの製造方法
JPH05175519A (ja) * 1991-12-25 1993-07-13 Toshiba Corp 半導体装置
JP4088263B2 (ja) * 1992-07-02 2008-05-21 株式会社東芝 高耐圧半導体素子
JP2755135B2 (ja) * 1993-11-25 1998-05-20 日本電気株式会社 可変容量装置および該可変容量装置を有する半導体集積回路装置
US5557140A (en) * 1995-04-12 1996-09-17 Hughes Aircraft Company Process tolerant, high-voltage, bi-level capacitance varactor diode
JPH10256574A (ja) * 1997-03-14 1998-09-25 Toko Inc ダイオード装置
JP3114654B2 (ja) * 1997-06-05 2000-12-04 日本電気株式会社 半導体装置の製造方法
EP1214737B1 (en) * 2000-03-03 2011-06-01 Nxp B.V. A method of producing a schottky varicap diode
US6559024B1 (en) * 2000-03-29 2003-05-06 Tyco Electronics Corporation Method of fabricating a variable capacity diode having a hyperabrupt junction profile
JP2002305309A (ja) * 2001-02-01 2002-10-18 Hitachi Ltd 半導体装置およびその製造方法
US7235862B2 (en) * 2001-07-10 2007-06-26 National Semiconductor Corporation Gate-enhanced junction varactor
WO2003054972A1 (en) * 2001-12-12 2003-07-03 Matsushita Electric Industrial Co., Ltd. Variable capacitor and its manufacturing method
US6521506B1 (en) * 2001-12-13 2003-02-18 International Business Machines Corporation Varactors for CMOS and BiCMOS technologies
SE0200137L (sv) * 2002-01-18 2003-07-19 Ericsson Telefon Ab L M Tillverkningsmetod, varaktor samt integrerad krets
JP2003229581A (ja) * 2002-02-04 2003-08-15 Shuzo Ito 半導体素子および半導体装置の製造方法
US7253073B2 (en) * 2004-01-23 2007-08-07 International Business Machines Corporation Structure and method for hyper-abrupt junction varactors

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