CN100539022C - 用于使用补偿阴极接触形成单掩模超突变结变容管的方法 - Google Patents

用于使用补偿阴极接触形成单掩模超突变结变容管的方法 Download PDF

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Publication number
CN100539022C
CN100539022C CNB2005800460080A CN200580046008A CN100539022C CN 100539022 C CN100539022 C CN 100539022C CN B2005800460080 A CNB2005800460080 A CN B2005800460080A CN 200580046008 A CN200580046008 A CN 200580046008A CN 100539022 C CN100539022 C CN 100539022C
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China
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dopant
region
negative electrode
abrupt junction
semiconductor structure
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Expired - Fee Related
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CNB2005800460080A
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English (en)
Chinese (zh)
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CN101099225A (zh
Inventor
D·D·库尔鲍
S·S·富尔凯
J·B·约翰逊
R·M·拉塞尔
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 

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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
CNB2005800460080A 2005-01-06 2005-12-22 用于使用补偿阴极接触形成单掩模超突变结变容管的方法 Expired - Fee Related CN100539022C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/905,486 US7518215B2 (en) 2005-01-06 2005-01-06 One mask hyperabrupt junction varactor using a compensated cathode contact
US10/905,486 2005-01-06

Publications (2)

Publication Number Publication Date
CN101099225A CN101099225A (zh) 2008-01-02
CN100539022C true CN100539022C (zh) 2009-09-09

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CNB2005800460080A Expired - Fee Related CN100539022C (zh) 2005-01-06 2005-12-22 用于使用补偿阴极接触形成单掩模超突变结变容管的方法

Country Status (5)

Country Link
US (1) US7518215B2 (enExample)
EP (1) EP1839340B1 (enExample)
JP (1) JP5044818B2 (enExample)
CN (1) CN100539022C (enExample)
WO (1) WO2006073943A2 (enExample)

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US7525177B2 (en) * 2005-04-01 2009-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Controllable varactor within dummy substrate pattern
US20080149983A1 (en) * 2006-12-20 2008-06-26 International Business Machines Corporation Metal-oxide-semiconductor (mos) varactors and methods of forming mos varactors
US7692271B2 (en) * 2007-02-28 2010-04-06 International Business Machines Corporation Differential junction varactor
US7825441B2 (en) * 2007-06-25 2010-11-02 International Business Machines Corporation Junction field effect transistor with a hyperabrupt junction
US20090101988A1 (en) * 2007-10-18 2009-04-23 Texas Instruments Incorporated Bipolar transistors with resistors
US7696604B2 (en) * 2007-10-23 2010-04-13 International Business Machines Corporation Silicon germanium heterostructure barrier varactor
US7902606B2 (en) * 2008-01-11 2011-03-08 International Business Machines Corporation Double gate depletion mode MOSFET
US8338906B2 (en) * 2008-01-30 2012-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Schottky device
US7804119B2 (en) * 2008-04-08 2010-09-28 International Business Machines Corporation Device structures with a hyper-abrupt P-N junction, methods of forming a hyper-abrupt P-N junction, and design structures for an integrated circuit
US8232558B2 (en) * 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8796809B2 (en) * 2008-09-08 2014-08-05 Cree, Inc. Varactor diode with doped voltage blocking layer
US7821103B2 (en) * 2008-09-09 2010-10-26 Freescale Semiconductor, Inc. Counter-doped varactor structure and method
US8216890B2 (en) 2009-03-13 2012-07-10 International Business Machines Corporation Lateral hyperabrupt junction varactor diode in an SOI substrate
JP6186601B2 (ja) * 2013-01-16 2017-08-30 セイコーＮｐｃ株式会社 可変容量ダイオード
TWI751609B (zh) * 2019-07-17 2022-01-01 美商安托梅拉公司 設有含超晶格之突陡接面區之可變電容器及相關方法
TWI772839B (zh) * 2019-07-17 2022-08-01 美商安托梅拉公司 設有含分隔超晶格之突陡接面區之可變電容器及相關方法
US10937888B2 (en) 2019-07-17 2021-03-02 Atomera Incorporated Method for making a varactor with a hyper-abrupt junction region including spaced-apart superlattices
US10937868B2 (en) 2019-07-17 2021-03-02 Atomera Incorporated Method for making semiconductor devices with hyper-abrupt junction region including spaced-apart superlattices
US11183565B2 (en) 2019-07-17 2021-11-23 Atomera Incorporated Semiconductor devices including hyper-abrupt junction region including spaced-apart superlattices and related methods

Citations (1)

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Publication number Priority date Publication date Assignee Title
US6521506B1 (en) * 2001-12-13 2003-02-18 International Business Machines Corporation Varactors for CMOS and BiCMOS technologies

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US4226648A (en) * 1979-03-16 1980-10-07 Bell Telephone Laboratories, Incorporated Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy
US4481487A (en) * 1981-08-14 1984-11-06 Texas Instruments Incorporated Monolithic microwave wide-band VCO
FR2592527B1 (fr) * 1985-12-31 1988-02-05 Thomson Csf Diode a capacite variable, a profil hyperabrupt et structure plane, et son procede de realisation
JPS6419779A (en) 1987-07-15 1989-01-23 Nec Corp Manufacture of hyperabrupt varactor diode
JPH02219279A (ja) * 1989-02-20 1990-08-31 Sanyo Electric Co Ltd 超階段型接合ダイオードの製造方法
JPH05175519A (ja) * 1991-12-25 1993-07-13 Toshiba Corp 半導体装置
JP4088263B2 (ja) * 1992-07-02 2008-05-21 株式会社東芝 高耐圧半導体素子
JP2755135B2 (ja) * 1993-11-25 1998-05-20 日本電気株式会社 可変容量装置および該可変容量装置を有する半導体集積回路装置
US5557140A (en) * 1995-04-12 1996-09-17 Hughes Aircraft Company Process tolerant, high-voltage, bi-level capacitance varactor diode
JPH10256574A (ja) * 1997-03-14 1998-09-25 Toko Inc ダイオード装置
JP3114654B2 (ja) * 1997-06-05 2000-12-04 日本電気株式会社 半導体装置の製造方法
EP1214737B1 (en) * 2000-03-03 2011-06-01 Nxp B.V. A method of producing a schottky varicap diode
US6559024B1 (en) * 2000-03-29 2003-05-06 Tyco Electronics Corporation Method of fabricating a variable capacity diode having a hyperabrupt junction profile
JP2002305309A (ja) * 2001-02-01 2002-10-18 Hitachi Ltd 半導体装置およびその製造方法
US7235862B2 (en) * 2001-07-10 2007-06-26 National Semiconductor Corporation Gate-enhanced junction varactor
WO2003054972A1 (en) * 2001-12-12 2003-07-03 Matsushita Electric Industrial Co., Ltd. Variable capacitor and its manufacturing method
SE0200137L (sv) * 2002-01-18 2003-07-19 Ericsson Telefon Ab L M Tillverkningsmetod, varaktor samt integrerad krets
JP2003229581A (ja) * 2002-02-04 2003-08-15 Shuzo Ito 半導体素子および半導体装置の製造方法
US7253073B2 (en) * 2004-01-23 2007-08-07 International Business Machines Corporation Structure and method for hyper-abrupt junction varactors

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
US6521506B1 (en) * 2001-12-13 2003-02-18 International Business Machines Corporation Varactors for CMOS and BiCMOS technologies

Also Published As

Publication number Publication date
US7518215B2 (en) 2009-04-14
WO2006073943A2 (en) 2006-07-13
WO2006073943A3 (en) 2007-03-01
US20060145300A1 (en) 2006-07-06
JP5044818B2 (ja) 2012-10-10
EP1839340A4 (en) 2009-09-09
CN101099225A (zh) 2008-01-02
EP1839340A2 (en) 2007-10-03
JP2008527714A (ja) 2008-07-24
EP1839340B1 (en) 2013-03-13

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Effective date of registration: 20171110

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Address before: American New York

Patentee before: Core USA second LLC

Effective date of registration: 20171110

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CF01 Termination of patent right due to non-payment of annual fee