JP2001127292A5 - - Google Patents

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Publication number
JP2001127292A5
JP2001127292A5 JP2000016475A JP2000016475A JP2001127292A5 JP 2001127292 A5 JP2001127292 A5 JP 2001127292A5 JP 2000016475 A JP2000016475 A JP 2000016475A JP 2000016475 A JP2000016475 A JP 2000016475A JP 2001127292 A5 JP2001127292 A5 JP 2001127292A5
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JP
Japan
Prior art keywords
junction
power mosfet
conductivity type
epitaxial layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000016475A
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English (en)
Japanese (ja)
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JP2001127292A (ja
Filing date
Publication date
Priority claimed from US09/428,299 external-priority patent/US6348712B1/en
Application filed filed Critical
Publication of JP2001127292A publication Critical patent/JP2001127292A/ja
Publication of JP2001127292A5 publication Critical patent/JP2001127292A5/ja
Pending legal-status Critical Current

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JP2000016475A 1999-10-27 2000-01-26 高密度トレンチゲートパワーｍｏｓｆｅｔ Pending JP2001127292A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/428,299 US6348712B1 (en) 1999-10-27 1999-10-27 High density trench-gated power MOSFET
US09/428299 1999-10-27

Publications (2)

Publication Number Publication Date
JP2001127292A JP2001127292A (ja) 2001-05-11
JP2001127292A5 true JP2001127292A5 (enExample) 2005-09-29

Family

ID=23698310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000016475A Pending JP2001127292A (ja) 1999-10-27 2000-01-26 高密度トレンチゲートパワーｍｏｓｆｅｔ

Country Status (3)

Country Link
US (2) US6348712B1 (enExample)
EP (2) EP1096574A3 (enExample)
JP (1) JP2001127292A (enExample)

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US6309929B1 (en) * 2000-09-22 2001-10-30 Industrial Technology Research Institute And Genetal Semiconductor Of Taiwan, Ltd. Method of forming trench MOS device and termination structure
US7384854B2 (en) * 2002-03-08 2008-06-10 International Business Machines Corporation Method of forming low capacitance ESD robust diodes
JP4209260B2 (ja) * 2003-06-04 2009-01-14 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法
JP4945055B2 (ja) * 2003-08-04 2012-06-06 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR20070093150A (ko) * 2004-01-10 2007-09-17 에이치브이브이아이 세미콘덕터즈, 인크. 전력 반도체 장치 및 그 방법
WO2005084221A2 (en) * 2004-03-01 2005-09-15 International Rectifier Corporation Self aligned contact structure for trench device
US8530963B2 (en) * 2005-01-06 2013-09-10 Estivation Properties Llc Power semiconductor device and method therefor
JP2006196545A (ja) * 2005-01-11 2006-07-27 Toshiba Corp 半導体装置の製造方法
US7655977B2 (en) * 2005-10-18 2010-02-02 International Rectifier Corporation Trench IGBT for highly capacitive loads
WO2007060716A1 (ja) * 2005-11-22 2007-05-31 Shindengen Electric Manufacturing Co., Ltd. トレンチゲートパワー半導体装置
US7667265B2 (en) * 2006-01-30 2010-02-23 Fairchild Semiconductor Corporation Varying mesa dimensions in high cell density trench MOSFET
JP2006310838A (ja) * 2006-04-05 2006-11-09 Hvvi Semiconductors Inc パワー半導体装置およびそのための方法
JP2006310836A (ja) * 2006-04-05 2006-11-09 Hvvi Semiconductors Inc パワー半導体装置およびそのための方法
JP5073991B2 (ja) * 2006-08-23 2012-11-14 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型半導体装置
US9437729B2 (en) * 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
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JP2007173878A (ja) * 2007-03-28 2007-07-05 Toshiba Corp 半導体装置
US9947770B2 (en) * 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
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US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
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US20100237439A1 (en) * 2009-03-18 2010-09-23 Ming-Cheng Lee High-voltage metal-dielectric-semiconductor device and method of the same
US9443974B2 (en) 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US9431530B2 (en) * 2009-10-20 2016-08-30 Vishay-Siliconix Super-high density trench MOSFET
JP4791572B2 (ja) * 2009-12-21 2011-10-12 ルネサスエレクトロニクス株式会社 半導体装置
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
KR102098996B1 (ko) 2014-08-19 2020-04-08 비쉐이-실리코닉스 초접합 금속 산화물 반도체 전계 효과 트랜지스터
WO2016028943A1 (en) 2014-08-19 2016-02-25 Vishay-Siliconix Electronic circuit
US10522674B2 (en) 2016-05-18 2019-12-31 Rohm Co., Ltd. Semiconductor with unified transistor structure and voltage regulator diode
US10692863B2 (en) 2016-09-30 2020-06-23 Rohm Co., Ltd. Semiconductor device and semiconductor package
DE102017108738B4 (de) * 2017-04-24 2022-01-27 Infineon Technologies Ag SiC-HALBLEITERVORRICHTUNG MIT EINEM VERSATZ IN EINEM GRABENBODEN UND HERSTELLUNGSVERFAHREN HIERFÜR
CN109256427A (zh) * 2018-09-19 2019-01-22 电子科技大学 一种集成肖特基二极管的SiC MOSFET器件
TWI739252B (zh) * 2019-12-25 2021-09-11 杰力科技股份有限公司 溝槽式mosfet元件及其製造方法
US12495577B2 (en) 2022-08-17 2025-12-09 Analog Devices, Inc. Self-aligned silicide gate for discrete shielded-gate trench power MOSFET
CN115394836A (zh) * 2022-09-19 2022-11-25 华虹半导体(无锡)有限公司 超级结沟槽栅终端结构及其制备方法

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US5674766A (en) * 1994-12-30 1997-10-07 Siliconix Incorporated Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer
US6049108A (en) * 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
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US6285060B1 (en) * 1999-12-30 2001-09-04 Siliconix Incorporated Barrier accumulation-mode MOSFET

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