JP2008526024A5 - - Google Patents

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Publication number
JP2008526024A5
JP2008526024A5 JP2007548318A JP2007548318A JP2008526024A5 JP 2008526024 A5 JP2008526024 A5 JP 2008526024A5 JP 2007548318 A JP2007548318 A JP 2007548318A JP 2007548318 A JP2007548318 A JP 2007548318A JP 2008526024 A5 JP2008526024 A5 JP 2008526024A5
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JP
Japan
Prior art keywords
plasma
upper electrode
flow rate
electrode
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007548318A
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English (en)
Japanese (ja)
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JP2008526024A (ja
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Publication date
Priority claimed from US11/019,464 external-priority patent/US7291286B2/en
Application filed filed Critical
Publication of JP2008526024A publication Critical patent/JP2008526024A/ja
Publication of JP2008526024A5 publication Critical patent/JP2008526024A5/ja
Pending legal-status Critical Current

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JP2007548318A 2004-12-23 2005-12-15 プラズマ処理装置用のシリコン電極及び炭化珪素電極の表面から黒色シリコン及び黒色炭化珪素を除去する方法 Pending JP2008526024A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/019,464 US7291286B2 (en) 2004-12-23 2004-12-23 Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses
PCT/US2005/045541 WO2006071556A2 (en) 2004-12-23 2005-12-15 Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses

Publications (2)

Publication Number Publication Date
JP2008526024A JP2008526024A (ja) 2008-07-17
JP2008526024A5 true JP2008526024A5 (enExample) 2009-01-29

Family

ID=36615391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007548318A Pending JP2008526024A (ja) 2004-12-23 2005-12-15 プラズマ処理装置用のシリコン電極及び炭化珪素電極の表面から黒色シリコン及び黒色炭化珪素を除去する方法

Country Status (7)

Country Link
US (1) US7291286B2 (enExample)
EP (1) EP1827871B1 (enExample)
JP (1) JP2008526024A (enExample)
KR (1) KR101191697B1 (enExample)
CN (1) CN101102909B (enExample)
TW (1) TWI386995B (enExample)
WO (1) WO2006071556A2 (enExample)

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JP6057292B2 (ja) * 2013-06-13 2017-01-11 学校法人関西学院 ＳｉＣ半導体素子の製造方法
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CN105710082B (zh) * 2014-12-02 2018-03-06 中国科学院上海硅酸盐研究所 一种去除金属纳米线表面有机物及氧化层的方法
WO2016103924A1 (ja) * 2014-12-22 2016-06-30 昭和電工株式会社 炭化珪素堆積物のクリーニング方法
JP6269709B2 (ja) 2016-03-28 2018-01-31 株式会社Sumco 清浄度評価方法、洗浄条件決定方法、およびシリコンウェーハの製造方法
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US11658038B2 (en) 2020-05-13 2023-05-23 Tokyo Electron Limited Method for dry etching silicon carbide films for resist underlayer applications
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CN115318219B (zh) * 2022-10-12 2023-08-18 常州烯聚新材料科技有限公司 适用闪光焦耳加热工艺的针状电极放电管及焦耳加热设备

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