JPS56125838A - Etching method - Google Patents

Etching method

Info

Publication number
JPS56125838A
JPS56125838A JP2815080A JP2815080A JPS56125838A JP S56125838 A JPS56125838 A JP S56125838A JP 2815080 A JP2815080 A JP 2815080A JP 2815080 A JP2815080 A JP 2815080A JP S56125838 A JPS56125838 A JP S56125838A
Authority
JP
Japan
Prior art keywords
etching
groove
ccl4
needle
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2815080A
Other languages
Japanese (ja)
Other versions
JPH0130294B2 (en
Inventor
Tokuo Kure
Sadayuki Okudaira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2815080A priority Critical patent/JPS56125838A/en
Publication of JPS56125838A publication Critical patent/JPS56125838A/en
Publication of JPH0130294B2 publication Critical patent/JPH0130294B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain the excellent shape of a section where etching was performed by a method wherein an Si is placed on one of the electrodes of a parallel flat plate electrode type etching device and the etching is performed using mixed gas of CCl4 and oxygen. CONSTITUTION:The Si substrate 12, whereon an SiO2 film 11 is provided as a mask, is placed on one of the electrodes of the parallel flat electrode type high frequency sputter-etching device, the etching is performed under the condition wherein needle-shaped protrusions 14 are generated on the bottom of a groove 13 by introducing the mixed gas of the CCl4 and O2, the needle-shaped protrusions are removed by performing an isotropic etching and then the groove is formed. Through these procedures, the etching groove having a highly excellent section pertaining to the selectivity and the sectional shape of the etching, can be formed.
JP2815080A 1980-03-07 1980-03-07 Etching method Granted JPS56125838A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2815080A JPS56125838A (en) 1980-03-07 1980-03-07 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2815080A JPS56125838A (en) 1980-03-07 1980-03-07 Etching method

Publications (2)

Publication Number Publication Date
JPS56125838A true JPS56125838A (en) 1981-10-02
JPH0130294B2 JPH0130294B2 (en) 1989-06-19

Family

ID=12240728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2815080A Granted JPS56125838A (en) 1980-03-07 1980-03-07 Etching method

Country Status (1)

Country Link
JP (1) JPS56125838A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878427A (en) * 1981-11-05 1983-05-12 Toshiba Corp Dry etching method
US4417947A (en) * 1982-07-16 1983-11-29 Signetics Corporation Edge profile control during patterning of silicon by dry etching with CCl4 -O2 mixtures
JP2008526024A (en) * 2004-12-23 2008-07-17 ラム リサーチ コーポレーション Method for removing black silicon and black silicon carbide from surfaces of silicon electrode and silicon carbide electrode for plasma processing apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5321573A (en) * 1976-08-12 1978-02-28 Toshiba Corp Etching method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5321573A (en) * 1976-08-12 1978-02-28 Toshiba Corp Etching method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878427A (en) * 1981-11-05 1983-05-12 Toshiba Corp Dry etching method
JPH0312454B2 (en) * 1981-11-05 1991-02-20 Tokyo Shibaura Electric Co
US4417947A (en) * 1982-07-16 1983-11-29 Signetics Corporation Edge profile control during patterning of silicon by dry etching with CCl4 -O2 mixtures
JP2008526024A (en) * 2004-12-23 2008-07-17 ラム リサーチ コーポレーション Method for removing black silicon and black silicon carbide from surfaces of silicon electrode and silicon carbide electrode for plasma processing apparatus

Also Published As

Publication number Publication date
JPH0130294B2 (en) 1989-06-19

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