KR101191697B1 - 플라즈마 처리 장치용 실리콘 및 실리콘 카바이드 전극의표면으로부터 블랙 실리콘 및 블랙 실리콘 카바이드를제거하는 방법 - Google Patents

플라즈마 처리 장치용 실리콘 및 실리콘 카바이드 전극의표면으로부터 블랙 실리콘 및 블랙 실리콘 카바이드를제거하는 방법 Download PDF

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KR101191697B1
KR101191697B1 KR1020077016345A KR20077016345A KR101191697B1 KR 101191697 B1 KR101191697 B1 KR 101191697B1 KR 1020077016345 A KR1020077016345 A KR 1020077016345A KR 20077016345 A KR20077016345 A KR 20077016345A KR 101191697 B1 KR101191697 B1 KR 101191697B1
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South Korea
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plasma
electrode
black silicon
silicon
silicon carbide
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Korean (ko)
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KR20070091661A (ko
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엔리코 마니
마이클 켈리
로버트 헤프티
미쉘 루팬
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램 리써치 코포레이션
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B44—DECORATIVE ARTS
    • B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
    • B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
    • B44C1/22—Removing surface-material, e.g. by engraving, by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Treating Waste Gases (AREA)
  • Carbon And Carbon Compounds (AREA)
KR1020077016345A 2004-12-23 2005-12-15 플라즈마 처리 장치용 실리콘 및 실리콘 카바이드 전극의표면으로부터 블랙 실리콘 및 블랙 실리콘 카바이드를제거하는 방법 Expired - Lifetime KR101191697B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/019,464 2004-12-23
US11/019,464 US7291286B2 (en) 2004-12-23 2004-12-23 Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses
PCT/US2005/045541 WO2006071556A2 (en) 2004-12-23 2005-12-15 Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses

Publications (2)

Publication Number Publication Date
KR20070091661A KR20070091661A (ko) 2007-09-11
KR101191697B1 true KR101191697B1 (ko) 2012-10-16

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KR1020077016345A Expired - Lifetime KR101191697B1 (ko) 2004-12-23 2005-12-15 플라즈마 처리 장치용 실리콘 및 실리콘 카바이드 전극의표면으로부터 블랙 실리콘 및 블랙 실리콘 카바이드를제거하는 방법

Country Status (7)

Country Link
US (1) US7291286B2 (enExample)
EP (1) EP1827871B1 (enExample)
JP (1) JP2008526024A (enExample)
KR (1) KR101191697B1 (enExample)
CN (1) CN101102909B (enExample)
TW (1) TWI386995B (enExample)
WO (1) WO2006071556A2 (enExample)

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US8702866B2 (en) 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
JP2008235562A (ja) * 2007-03-20 2008-10-02 Taiyo Nippon Sanso Corp プラズマｃｖｄ成膜装置のクリーニング方法
US8221552B2 (en) * 2007-03-30 2012-07-17 Lam Research Corporation Cleaning of bonded silicon electrodes
US7578889B2 (en) * 2007-03-30 2009-08-25 Lam Research Corporation Methodology for cleaning of surface metal contamination from electrode assemblies
US8262800B1 (en) 2008-02-12 2012-09-11 Novellus Systems, Inc. Methods and apparatus for cleaning deposition reactors
KR20110088549A (ko) * 2008-11-04 2011-08-03 프랙스에어 테크놀로지, 인코포레이티드 반도체 응용을 위한 열 분무 코팅
US8591659B1 (en) * 2009-01-16 2013-11-26 Novellus Systems, Inc. Plasma clean method for deposition chamber
DE102009028256B4 (de) 2009-08-05 2019-01-24 Robert Bosch Gmbh Verfahren zum Ätzen von Siliziumcarbid mittels eines Plasmaätzverfahrens und Siliziumcarbidsubstrat
CN101734611B (zh) * 2009-12-16 2011-08-31 北京大学 基于无掩膜深反应离子刻蚀制备黑硅的方法
WO2011084127A2 (en) * 2009-12-18 2011-07-14 Lam Research Corporation Methodology for cleaning of surface metal contamination from an upper electrode used in a plasma chamber
CN101880914B (zh) 2010-05-25 2012-09-12 中国科学院微电子研究所 利用等离子体浸没离子注入制备黑硅的方法
US9702695B2 (en) * 2010-05-27 2017-07-11 Hitachi High-Technologies Corporation Image processing device, charged particle beam device, charged particle beam device adjustment sample, and manufacturing method thereof
JP6057292B2 (ja) * 2013-06-13 2017-01-11 学校法人関西学院 ＳｉＣ半導体素子の製造方法
CN103681246B (zh) * 2013-12-30 2017-10-17 国家电网公司 一种SiC材料清洗方法
CN105710082B (zh) * 2014-12-02 2018-03-06 中国科学院上海硅酸盐研究所 一种去除金属纳米线表面有机物及氧化层的方法
WO2016103924A1 (ja) * 2014-12-22 2016-06-30 昭和電工株式会社 炭化珪素堆積物のクリーニング方法
JP6269709B2 (ja) 2016-03-28 2018-01-31 株式会社Sumco 清浄度評価方法、洗浄条件決定方法、およびシリコンウェーハの製造方法
KR101914289B1 (ko) * 2016-08-18 2018-11-01 주식회사 티씨케이 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법
US11658038B2 (en) 2020-05-13 2023-05-23 Tokyo Electron Limited Method for dry etching silicon carbide films for resist underlayer applications
CN115354298A (zh) * 2022-07-05 2022-11-18 湖南红太阳光电科技有限公司 一种pecvd设备石墨舟清洗系统
CN115318219B (zh) * 2022-10-12 2023-08-18 常州烯聚新材料科技有限公司 适用闪光焦耳加热工艺的针状电极放电管及焦耳加热设备

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Also Published As

Publication number Publication date
JP2008526024A (ja) 2008-07-17
CN101102909A (zh) 2008-01-09
KR20070091661A (ko) 2007-09-11
CN101102909B (zh) 2011-11-30
WO2006071556A3 (en) 2007-01-04
EP1827871A2 (en) 2007-09-05
WO2006071556A2 (en) 2006-07-06
US20060157448A1 (en) 2006-07-20
TWI386995B (zh) 2013-02-21
US7291286B2 (en) 2007-11-06
TW200634925A (en) 2006-10-01
EP1827871A4 (en) 2009-09-16
EP1827871B1 (en) 2016-03-09

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