TWI386995B - 自矽表面移除不可見矽及不可見碳化矽之方法及用於電漿處理裝置之碳化矽電極 - Google Patents

自矽表面移除不可見矽及不可見碳化矽之方法及用於電漿處理裝置之碳化矽電極 Download PDF

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Publication number
TWI386995B
TWI386995B TW094146385A TW94146385A TWI386995B TW I386995 B TWI386995 B TW I386995B TW 094146385 A TW094146385 A TW 094146385A TW 94146385 A TW94146385 A TW 94146385A TW I386995 B TWI386995 B TW I386995B
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TW
Taiwan
Prior art keywords
plasma
invisible
upper electrode
electrode
flow
Prior art date
Application number
TW094146385A
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English (en)
Chinese (zh)
Other versions
TW200634925A (en
Inventor
Enrico Magni
Michael Kelly
Robert Hefty
Michelle Lupan
Original Assignee
Lam Res Corp
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Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200634925A publication Critical patent/TW200634925A/zh
Application granted granted Critical
Publication of TWI386995B publication Critical patent/TWI386995B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B44—DECORATIVE ARTS
    • B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
    • B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
    • B44C1/22—Removing surface-material, e.g. by engraving, by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Treating Waste Gases (AREA)
  • Carbon And Carbon Compounds (AREA)
TW094146385A 2004-12-23 2005-12-23 自矽表面移除不可見矽及不可見碳化矽之方法及用於電漿處理裝置之碳化矽電極 TWI386995B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/019,464 US7291286B2 (en) 2004-12-23 2004-12-23 Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses

Publications (2)

Publication Number Publication Date
TW200634925A TW200634925A (en) 2006-10-01
TWI386995B true TWI386995B (zh) 2013-02-21

Family

ID=36615391

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094146385A TWI386995B (zh) 2004-12-23 2005-12-23 自矽表面移除不可見矽及不可見碳化矽之方法及用於電漿處理裝置之碳化矽電極

Country Status (7)

Country Link
US (1) US7291286B2 (enExample)
EP (1) EP1827871B1 (enExample)
JP (1) JP2008526024A (enExample)
KR (1) KR101191697B1 (enExample)
CN (1) CN101102909B (enExample)
TW (1) TWI386995B (enExample)
WO (1) WO2006071556A2 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8057603B2 (en) * 2006-02-13 2011-11-15 Tokyo Electron Limited Method of cleaning substrate processing chamber, storage medium, and substrate processing chamber
US7902073B2 (en) * 2006-12-14 2011-03-08 Lam Research Corporation Glue layer for hydrofluorocarbon etch
US8702866B2 (en) 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
JP2008235562A (ja) * 2007-03-20 2008-10-02 Taiyo Nippon Sanso Corp プラズマｃｖｄ成膜装置のクリーニング方法
US8221552B2 (en) * 2007-03-30 2012-07-17 Lam Research Corporation Cleaning of bonded silicon electrodes
US7578889B2 (en) * 2007-03-30 2009-08-25 Lam Research Corporation Methodology for cleaning of surface metal contamination from electrode assemblies
US8262800B1 (en) 2008-02-12 2012-09-11 Novellus Systems, Inc. Methods and apparatus for cleaning deposition reactors
KR20110088549A (ko) * 2008-11-04 2011-08-03 프랙스에어 테크놀로지, 인코포레이티드 반도체 응용을 위한 열 분무 코팅
US8591659B1 (en) * 2009-01-16 2013-11-26 Novellus Systems, Inc. Plasma clean method for deposition chamber
DE102009028256B4 (de) 2009-08-05 2019-01-24 Robert Bosch Gmbh Verfahren zum Ätzen von Siliziumcarbid mittels eines Plasmaätzverfahrens und Siliziumcarbidsubstrat
CN101734611B (zh) * 2009-12-16 2011-08-31 北京大学 基于无掩膜深反应离子刻蚀制备黑硅的方法
WO2011084127A2 (en) * 2009-12-18 2011-07-14 Lam Research Corporation Methodology for cleaning of surface metal contamination from an upper electrode used in a plasma chamber
CN101880914B (zh) 2010-05-25 2012-09-12 中国科学院微电子研究所 利用等离子体浸没离子注入制备黑硅的方法
US9702695B2 (en) * 2010-05-27 2017-07-11 Hitachi High-Technologies Corporation Image processing device, charged particle beam device, charged particle beam device adjustment sample, and manufacturing method thereof
JP6057292B2 (ja) * 2013-06-13 2017-01-11 学校法人関西学院 ＳｉＣ半導体素子の製造方法
CN103681246B (zh) * 2013-12-30 2017-10-17 国家电网公司 一种SiC材料清洗方法
CN105710082B (zh) * 2014-12-02 2018-03-06 中国科学院上海硅酸盐研究所 一种去除金属纳米线表面有机物及氧化层的方法
WO2016103924A1 (ja) * 2014-12-22 2016-06-30 昭和電工株式会社 炭化珪素堆積物のクリーニング方法
JP6269709B2 (ja) 2016-03-28 2018-01-31 株式会社Sumco 清浄度評価方法、洗浄条件決定方法、およびシリコンウェーハの製造方法
KR101914289B1 (ko) * 2016-08-18 2018-11-01 주식회사 티씨케이 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법
US11658038B2 (en) 2020-05-13 2023-05-23 Tokyo Electron Limited Method for dry etching silicon carbide films for resist underlayer applications
CN115354298A (zh) * 2022-07-05 2022-11-18 湖南红太阳光电科技有限公司 一种pecvd设备石墨舟清洗系统
CN115318219B (zh) * 2022-10-12 2023-08-18 常州烯聚新材料科技有限公司 适用闪光焦耳加热工艺的针状电极放电管及焦耳加热设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5865896A (en) * 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
US20050001276A1 (en) * 2003-07-03 2005-01-06 The Regents Of The University Of California Selective etching of silicon carbide films

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US19081A (en) * 1858-01-12 Spencer b
US112294A (en) * 1871-02-28 peters
JPS56125838A (en) * 1980-03-07 1981-10-02 Hitachi Ltd Etching method
US4426246A (en) 1982-07-26 1984-01-17 Bell Telephone Laboratories, Incorporated Plasma pretreatment with BCl3 to remove passivation formed by fluorine-etch
US4498953A (en) 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
US4595484A (en) 1985-12-02 1986-06-17 International Business Machines Corporation Reactive ion etching apparatus
US5215619A (en) * 1986-12-19 1993-06-01 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
US5565038A (en) 1991-05-16 1996-10-15 Intel Corporation Interhalogen cleaning of process equipment
US6124211A (en) 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
AU2683995A (en) * 1994-09-02 1996-03-27 Stichting Voor De Technische Wetenschappen Process for producing micromechanical structures by means of reactive ion etching
US5585012A (en) 1994-12-15 1996-12-17 Applied Materials Inc. Self-cleaning polymer-free top electrode for parallel electrode etch operation
US5665203A (en) 1995-04-28 1997-09-09 International Business Machines Corporation Silicon etching method
US5888906A (en) 1996-09-16 1999-03-30 Micron Technology, Inc. Plasmaless dry contact cleaning method using interhalogen compounds
JP3568749B2 (ja) * 1996-12-17 2004-09-22 株式会社デンソー 半導体のドライエッチング方法
WO1998032163A1 (en) 1997-01-22 1998-07-23 California Institute Of Technology Gas phase silicon etching with bromine trifluoride
US6090304A (en) 1997-08-28 2000-07-18 Lam Research Corporation Methods for selective plasma etch
US6033997A (en) * 1997-12-29 2000-03-07 Siemens Aktiengesellschaft Reduction of black silicon in semiconductor fabrication
US6635185B2 (en) 1997-12-31 2003-10-21 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds
US6290779B1 (en) 1998-06-12 2001-09-18 Tokyo Electron Limited Systems and methods for dry cleaning process chambers
US6394104B1 (en) 1998-08-28 2002-05-28 Taiwan Semiconductor Manufacturing Company Method of controlling and improving SOG etchback etcher
KR20010112277A (ko) * 1999-12-23 2001-12-20 조셉 제이. 스위니 높은 개구 영역의 실리콘 구조체들의 이방성 에칭을 위한불소 기재 플라즈마 에칭 방법
US6391788B1 (en) 2000-02-25 2002-05-21 Applied Materials, Inc. Two etchant etch method
US6500356B2 (en) 2000-03-27 2002-12-31 Applied Materials, Inc. Selectively etching silicon using fluorine without plasma
US6514378B1 (en) 2000-03-31 2003-02-04 Lam Research Corporation Method for improving uniformity and reducing etch rate variation of etching polysilicon
US6489249B1 (en) 2000-06-20 2002-12-03 Infineon Technologies Ag Elimination/reduction of black silicon in DT etch
JP3606198B2 (ja) * 2000-12-14 2005-01-05 株式会社日立製作所 プラズマ処理装置
WO2002058125A1 (en) * 2001-01-22 2002-07-25 Tokyo Electron Limited Plasma processing device and plasma processing method
US20020177321A1 (en) * 2001-03-30 2002-11-28 Li Si Yi Plasma etching of silicon carbide
US6527911B1 (en) 2001-06-29 2003-03-04 Lam Research Corporation Configurable plasma volume etch chamber
US6776851B1 (en) 2001-07-11 2004-08-17 Lam Research Corporation In-situ cleaning of a polymer coated plasma processing chamber
TW567554B (en) 2001-08-08 2003-12-21 Lam Res Corp All dual damascene oxide etch process steps in one confined plasma chamber
US6846726B2 (en) * 2002-04-17 2005-01-25 Lam Research Corporation Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
US6767836B2 (en) * 2002-09-04 2004-07-27 Asm Japan K.K. Method of cleaning a CVD reaction chamber using an active oxygen species
US6730600B2 (en) 2002-09-27 2004-05-04 Agere Systems, Inc. Method of dry etching a semiconductor device in the absence of a plasma
US6630395B1 (en) * 2002-10-24 2003-10-07 International Business Machines Corporation Methods for fabricating electrical connections to semiconductor structures incorporating low-k dielectric materials
US20040112544A1 (en) 2002-12-16 2004-06-17 Hongwen Yan Magnetic mirror for preventing wafer edge damage during dry etching

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5865896A (en) * 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
US20050001276A1 (en) * 2003-07-03 2005-01-06 The Regents Of The University Of California Selective etching of silicon carbide films

Also Published As

Publication number Publication date
JP2008526024A (ja) 2008-07-17
CN101102909A (zh) 2008-01-09
KR20070091661A (ko) 2007-09-11
CN101102909B (zh) 2011-11-30
WO2006071556A3 (en) 2007-01-04
EP1827871A2 (en) 2007-09-05
WO2006071556A2 (en) 2006-07-06
US20060157448A1 (en) 2006-07-20
KR101191697B1 (ko) 2012-10-16
US7291286B2 (en) 2007-11-06
TW200634925A (en) 2006-10-01
EP1827871A4 (en) 2009-09-16
EP1827871B1 (en) 2016-03-09

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