JP2008515749A - 低マイクロパイプの１００ｍｍ炭化ケイ素ウェハ - Google Patents

低マイクロパイプの１００ｍｍ炭化ケイ素ウェハ Download PDF

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Publication number
JP2008515749A
JP2008515749A JP2007534682A JP2007534682A JP2008515749A JP 2008515749 A JP2008515749 A JP 2008515749A JP 2007534682 A JP2007534682 A JP 2007534682A JP 2007534682 A JP2007534682 A JP 2007534682A JP 2008515749 A JP2008515749 A JP 2008515749A
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wafer
sic
silicon carbide
micropipes
crystal
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JP2007534682A
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Japanese (ja)
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JP2008515749A5 (enExample
Inventor
パウエル，エイドリアン
ブレイディ，マーク
レナード，ロバート・タイラー
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Wolfspeed Inc
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Cree Inc
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Application filed by Cree Inc filed Critical Cree Inc
Publication of JP2008515749A publication Critical patent/JP2008515749A/ja
Publication of JP2008515749A5 publication Critical patent/JP2008515749A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2007534682A 2004-10-04 2005-09-27 低マイクロパイプの１００ｍｍ炭化ケイ素ウェハ Pending JP2008515749A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/957,807 US7314521B2 (en) 2004-10-04 2004-10-04 Low micropipe 100 mm silicon carbide wafer
PCT/US2005/034352 WO2006041660A2 (en) 2004-10-04 2005-09-27 100 mm silicon carbide wafer with low micropipe density

Related Child Applications (1)

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JP2008244459A Division JP5680269B2 (ja) 2004-10-04 2008-09-24 低マイクロパイプの１００ｍｍ炭化ケイ素ウェハ

Publications (2)

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JP2008515749A true JP2008515749A (ja) 2008-05-15
JP2008515749A5 JP2008515749A5 (enExample) 2008-11-13

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JP2007534682A Pending JP2008515749A (ja) 2004-10-04 2005-09-27 低マイクロパイプの１００ｍｍ炭化ケイ素ウェハ
JP2008244459A Expired - Lifetime JP5680269B2 (ja) 2004-10-04 2008-09-24 低マイクロパイプの１００ｍｍ炭化ケイ素ウェハ
JP2012193298A Expired - Lifetime JP6141609B2 (ja) 2004-10-04 2012-09-03 低マイクロパイプの１００ｍｍ炭化ケイ素ウェハ

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2008244459A Expired - Lifetime JP5680269B2 (ja) 2004-10-04 2008-09-24 低マイクロパイプの１００ｍｍ炭化ケイ素ウェハ
JP2012193298A Expired - Lifetime JP6141609B2 (ja) 2004-10-04 2012-09-03 低マイクロパイプの１００ｍｍ炭化ケイ素ウェハ

Country Status (8)

Country Link
US (3) US7314521B2 (enExample)
EP (2) EP2487280A1 (enExample)
JP (3) JP2008515749A (enExample)
KR (1) KR100854004B1 (enExample)
CN (2) CN103422174A (enExample)
CA (1) CA2581856C (enExample)
TW (1) TWI294925B (enExample)
WO (1) WO2006041660A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008522943A (ja) * 2004-12-08 2008-07-03 クリー インコーポレイテッド 高品質で大きなサイズの炭化ケイ素結晶を製造するための方法
WO2011118104A1 (ja) * 2010-03-23 2011-09-29 住友電気工業株式会社 半導体装置およびその製造方法
WO2012090572A1 (ja) * 2010-12-27 2012-07-05 住友電気工業株式会社 炭化珪素基板、半導体装置、炭化珪素基板の製造方法、および半導体装置の製造方法

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US7294324B2 (en) 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US8980445B2 (en) * 2006-07-06 2015-03-17 Cree, Inc. One hundred millimeter SiC crystal grown on off-axis seed
EP2264223A3 (en) * 2006-09-14 2011-10-26 Cree, Inc. Micropipe-free silicon carbide and related method of manufacture
JP4388538B2 (ja) * 2006-09-21 2009-12-24 新日本製鐵株式会社 炭化珪素単結晶製造装置
JP2009137777A (ja) * 2007-12-04 2009-06-25 Sumitomo Electric Ind Ltd ＡｌＮ結晶およびその成長方法
JP5135545B2 (ja) * 2008-04-18 2013-02-06 新日鐵住金株式会社 炭化珪素単結晶インゴット育成用種結晶及びその製造方法
JP5250321B2 (ja) * 2008-07-04 2013-07-31 昭和電工株式会社 炭化珪素単結晶成長用種結晶の製造方法並びに炭化珪素単結晶の製造方法
JP2010095397A (ja) * 2008-10-15 2010-04-30 Nippon Steel Corp 炭化珪素単結晶及び炭化珪素単結晶ウェハ
DE112009003667B4 (de) * 2008-12-08 2024-04-25 Ii-Vi Inc. Verbessertes axial-gradient-transport- (agt-) züchtungsverfahren und -apparat unter anwendung von resistivem erhitzen
US8044408B2 (en) * 2009-05-20 2011-10-25 Nippon Steel Corporation SiC single-crystal substrate and method of producing SiC single-crystal substrate
DE102009048868B4 (de) * 2009-10-09 2013-01-03 Sicrystal Ag Herstellungsverfahren für einen SiC-Volumeneinkristall mittels einer thermischen Behandlung und niederohmiges einkristallines SiC-Substrat
JPWO2011046021A1 (ja) * 2009-10-13 2013-03-07 住友電気工業株式会社 炭化珪素基板の製造方法および炭化珪素基板
KR20120023817A (ko) 2009-10-30 2012-03-13 스미토모덴키고교가부시키가이샤 탄화규소 기판의 제조 방법 및 탄화규소 기판
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JP5696630B2 (ja) 2011-09-21 2015-04-08 住友電気工業株式会社 炭化珪素基板およびその製造方法
JP5803786B2 (ja) 2012-04-02 2015-11-04 住友電気工業株式会社 炭化珪素基板、半導体装置およびこれらの製造方法
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US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
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US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US9657409B2 (en) * 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
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JP5943131B2 (ja) * 2015-09-02 2016-06-29 住友電気工業株式会社 炭化珪素基板、半導体装置およびこれらの製造方法
KR20190135504A (ko) 2017-03-29 2019-12-06 팔리두스, 인크. SiC 용적측정 형태 및 보올을 형성하는 방법
KR101998138B1 (ko) * 2017-04-20 2019-07-09 한국세라믹기술원 자외선 포토루미네선스를 이용한 결정의 폴리타입 분석방법
CN114174567B (zh) * 2019-03-05 2023-12-15 学校法人关西学院 SiC衬底的制造方法及其制造装置
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
JP2023508691A (ja) 2019-12-27 2023-03-03 ウルフスピード インコーポレイテッド 大口径炭化ケイ素ウェハ
US12125701B2 (en) 2020-12-15 2024-10-22 Wolfspeed, Inc. Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
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CN113445128A (zh) * 2021-09-01 2021-09-28 浙江大学杭州国际科创中心 低微管密度碳化硅单晶制备方法及碳化硅单晶
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JP7710614B2 (ja) * 2022-06-30 2025-07-18 日本碍子株式会社 複合基板および１３族元素窒化物エピタキシャル成長用基板
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Cited By (8)

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JP2008522943A (ja) * 2004-12-08 2008-07-03 クリー インコーポレイテッド 高品質で大きなサイズの炭化ケイ素結晶を製造するための方法
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JPWO2011118104A1 (ja) * 2010-03-23 2013-07-04 住友電気工業株式会社 半導体装置およびその製造方法
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US8618552B2 (en) 2013-12-31
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US20080237609A1 (en) 2008-10-02
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CA2581856C (en) 2011-11-29
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