JP2008515654A5 - - Google Patents
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- Publication number
- JP2008515654A5 JP2008515654A5 JP2007536710A JP2007536710A JP2008515654A5 JP 2008515654 A5 JP2008515654 A5 JP 2008515654A5 JP 2007536710 A JP2007536710 A JP 2007536710A JP 2007536710 A JP2007536710 A JP 2007536710A JP 2008515654 A5 JP2008515654 A5 JP 2008515654A5
- Authority
- JP
- Japan
- Prior art keywords
- nanowire
- conductive polymer
- polymer layer
- substrate
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000002070 nanowire Substances 0.000 claims 8
- 239000010410 layer Substances 0.000 claims 6
- 229920001940 conductive polymer Polymers 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- 239000010409 thin film Substances 0.000 claims 3
- 239000002356 single layer Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
Claims (5)
- a.基板と;
b.前記基板上にデポジットされた導電性ポリマー層であって、動作電流レベルに達するのに十分なナノワイヤの密度にて複数のナノワイヤを含んだ前記導電性ポリマー層と;
c.前記導電性ポリマー層中に形成されたソース及びドレイン領域と;
d.前記導電性ポリマー層上に形成されたゲートと;
を備え、前記複数のナノワイヤがそれらの長軸にほぼ平行に方向付けられたトランジスタデバイス。 - 前記ナノワイヤが該ナノワイヤの少なくとも一部の上にデポジットさせた酸化物の層を備える請求項1に記載のデバイス。
- 前記ナノワイヤと前記ソース及びドレイン領域との間のオーム接触を改善するためにナノワイヤの両端の上には実質的に酸化物層を有さない請求項2に記載のデバイス。
- 前記ナノワイヤが単層薄膜、サブ単層薄膜、又は多層薄膜として形成される請求項1に記載のデバイス。
- 前記基板がプラスチック物質から作られる請求項1に記載のデバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US61783004P | 2004-10-12 | 2004-10-12 | |
PCT/US2005/034394 WO2006124055A2 (en) | 2004-10-12 | 2005-09-22 | Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008515654A JP2008515654A (ja) | 2008-05-15 |
JP2008515654A5 true JP2008515654A5 (ja) | 2008-11-06 |
Family
ID=37431705
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007536710A Pending JP2008515654A (ja) | 2004-10-12 | 2005-09-22 | 導電性ポリマー及び半導体ナノワイヤに基づいてプラスチック電子部品を製造するための完全に集積化された有機層プロセス |
Country Status (4)
Country | Link |
---|---|
US (2) | US7345307B2 (ja) |
EP (1) | EP1805823A2 (ja) |
JP (1) | JP2008515654A (ja) |
WO (1) | WO2006124055A2 (ja) |
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US7068868B1 (en) * | 2002-11-12 | 2006-06-27 | Ifos, Inc. | Sensing devices based on evanescent optical coupling |
JP2004247716A (ja) * | 2003-01-23 | 2004-09-02 | Mitsubishi Chemicals Corp | 積層体の製造方法 |
KR101132076B1 (ko) * | 2003-08-04 | 2012-04-02 | 나노시스, 인크. | 나노선 복합체 및 나노선 복합체로부터 전자 기판을제조하기 위한 시스템 및 프로세스 |
US20070158642A1 (en) * | 2003-12-19 | 2007-07-12 | Regents Of The University Of California | Active electronic devices with nanowire composite components |
KR20070061552A (ko) * | 2004-08-27 | 2007-06-13 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 반도전성 침투 네트워크 |
US7960037B2 (en) * | 2004-12-03 | 2011-06-14 | The Regents Of The University Of California | Carbon nanotube polymer composition and devices |
-
2005
- 2005-09-22 US US11/233,503 patent/US7345307B2/en not_active Expired - Fee Related
- 2005-09-22 EP EP05857948A patent/EP1805823A2/en not_active Withdrawn
- 2005-09-22 JP JP2007536710A patent/JP2008515654A/ja active Pending
- 2005-09-22 WO PCT/US2005/034394 patent/WO2006124055A2/en active Application Filing
-
2008
- 2008-01-18 US US12/016,701 patent/US20080128688A1/en not_active Abandoned
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