JP2005531131A5 - - Google Patents

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Publication number
JP2005531131A5
JP2005531131A5 JP2004502343A JP2004502343A JP2005531131A5 JP 2005531131 A5 JP2005531131 A5 JP 2005531131A5 JP 2004502343 A JP2004502343 A JP 2004502343A JP 2004502343 A JP2004502343 A JP 2004502343A JP 2005531131 A5 JP2005531131 A5 JP 2005531131A5
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JP
Japan
Prior art keywords
aperture
substrate
semiconductor
source
shadow mask
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JP2004502343A
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English (en)
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JP2005531131A (ja
JP4426438B2 (ja
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Priority claimed from US10/137,562 external-priority patent/US6667215B2/en
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Publication of JP2005531131A publication Critical patent/JP2005531131A/ja
Publication of JP2005531131A5 publication Critical patent/JP2005531131A5/ja
Application granted granted Critical
Publication of JP4426438B2 publication Critical patent/JP4426438B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Claims (4)

  1. ソース電極およびドレイン電極フィーチャーを、固定されたシャドウマスクにある単一アパーチャを通して基板上に堆積させる工程を含む、トランジスタの製造方法であって、前記アパーチャが少なくとも２つの対向縁部を有しており、前記フィーチャーの形状が前記アパーチャおよび前記基板に対するソース材料の位置により画定されている方法。
  2. ゲート電極、ゲート誘電体、ソース電極およびドレイン電極フィーチャーを基板上に形成する工程と、第１の半導体材料と第２の半導体材料を固定されたシャドウマスクにある単一アパーチャを通して堆積する工程とを含む、装置の製造方法であって、前記各半導体材料の少なくとも一部が前記もう一方の半導体材料と重ならないように前記アパーチャが少なくとも２つの対向縁部を有している方法。
  3. ゲート電極と、ゲート誘電体と、ソース電極およびドレイン電極フィーチャーと、半導体層と、基板と、アパーチャを含むシャドウマスクとを含む物品であって、前記シャドウマスクが前記基板に永続的に固定されており、前記ソースおよびドレイン電極フィーチャーが前記アパーチャにより画定されている物品。
  4. ゲート電極と、ゲート誘電体と、ソース電極およびドレイン電極フィーチャーと、第１の半導体フィーチャーと、第２の半導体フィーチャーと、基板と、アパーチャを含むシャドウマスクとを含む物品であって、前記シャドウマスクが前記基板に永続的に固定されており、前記両半導体フィーチャーが前記アパーチャにより画定されており、前記各半導体フィーチャーの少なくとも一部が前記もう一方の半導体フィーチャーと重なっていない物品。
JP2004502343A 2002-05-02 2003-04-17 トランジスタの製造方法 Expired - Fee Related JP4426438B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/137,562 US6667215B2 (en) 2002-05-02 2002-05-02 Method of making transistors
PCT/US2003/012022 WO2003094219A1 (en) 2002-05-02 2003-04-17 Method of making transistors

Publications (3)

Publication Number Publication Date
JP2005531131A JP2005531131A (ja) 2005-10-13
JP2005531131A5 true JP2005531131A5 (ja) 2006-06-15
JP4426438B2 JP4426438B2 (ja) 2010-03-03

Family

ID=29269106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004502343A Expired - Fee Related JP4426438B2 (ja) 2002-05-02 2003-04-17 トランジスタの製造方法

Country Status (9)

Country Link
US (2) US6667215B2 (ja)
EP (1) EP1502295B1 (ja)
JP (1) JP4426438B2 (ja)
KR (1) KR20040105251A (ja)
CN (1) CN100372082C (ja)
AT (1) ATE442673T1 (ja)
AU (1) AU2003226425A1 (ja)
DE (1) DE60329177D1 (ja)
WO (1) WO2003094219A1 (ja)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6897164B2 (en) * 2002-02-14 2005-05-24 3M Innovative Properties Company Aperture masks for circuit fabrication
US6821348B2 (en) * 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
US20030151118A1 (en) * 2002-02-14 2003-08-14 3M Innovative Properties Company Aperture masks for circuit fabrication
EP1357602A1 (de) * 2002-03-19 2003-10-29 Scheuten Glasgroep Selbstjustierende Serienverschaltung von Dünnschichten und Verfahren zur Herstellung
PT1355359E (pt) * 2002-03-19 2007-07-13 Scheuten Glasgroep Bv Conexão em série de auto-ajuste de camadas finas e grossas e processo para o fabrico.
DE10212878B4 (de) * 2002-03-22 2007-11-29 Qimonda Ag Halbleiterschaltungsanordnung und Halbleiterspeichereinrichtung
US6784017B2 (en) * 2002-08-12 2004-08-31 Precision Dynamics Corporation Method of creating a high performance organic semiconductor device
JP2004319964A (ja) * 2003-03-28 2004-11-11 Mitsubishi Electric Corp 半導体装置及びその製造方法
US7556982B2 (en) * 2003-08-07 2009-07-07 Uchicago Argonne, Llc Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates
US7459839B2 (en) * 2003-12-05 2008-12-02 Zhidan Li Tolt Low voltage electron source with self aligned gate apertures, and luminous display using the electron source
US7078937B2 (en) * 2003-12-17 2006-07-18 3M Innovative Properties Company Logic circuitry powered by partially rectified ac waveform
US7772063B2 (en) * 2004-08-11 2010-08-10 Identifi Technologies, Inc. Reduced-step CMOS processes for low-cost radio frequency identification devices
KR101090250B1 (ko) * 2004-10-15 2011-12-06 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
KR101186966B1 (ko) * 2004-11-09 2012-10-02 코닌클리케 필립스 일렉트로닉스 엔.브이. 유기 트랜지스터를 제조하기 위한 자체-정렬 공정
US20060105550A1 (en) * 2004-11-17 2006-05-18 Manish Sharma Method of depositing material on a substrate for a device
DE102004059467A1 (de) * 2004-12-10 2006-07-20 Polyic Gmbh & Co. Kg Gatter aus organischen Feldeffekttransistoren
US20060128165A1 (en) * 2004-12-13 2006-06-15 3M Innovative Properties Company Method for patterning surface modification
JP4938984B2 (ja) * 2005-02-02 2012-05-23 独立行政法人理化学研究所 トップコンタクト型電界効果トランジスタの製造方法およびトップコンタクト型電界効果トランジスタ
KR20060104092A (ko) * 2005-03-29 2006-10-09 삼성전자주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
US7410907B2 (en) * 2005-03-31 2008-08-12 Lucent Technologies Inc. Fabricating integrated devices using embedded masks
EP1727219B1 (en) 2005-05-25 2014-05-07 Samsung SDI Germany GmbH Organic thin film transistor and method for producing the same
US7615501B2 (en) * 2005-08-11 2009-11-10 3M Innovative Properties Company Method for making a thin film layer
JP5078246B2 (ja) * 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
US8414962B2 (en) 2005-10-28 2013-04-09 The Penn State Research Foundation Microcontact printed thin film capacitors
JP4722679B2 (ja) * 2005-11-11 2011-07-13 日本電信電話株式会社 電極の製造方法及び素子の製造方法
US20080187651A1 (en) * 2006-10-24 2008-08-07 3M Innovative Properties Company Conductive ink formulations
US20080171422A1 (en) * 2007-01-11 2008-07-17 Tokie Jeffrey H Apparatus and methods for fabrication of thin film electronic devices and circuits
US7960708B2 (en) * 2007-03-13 2011-06-14 University Of Houston Device and method for manufacturing a particulate filter with regularly spaced micropores
US20100096621A1 (en) * 2007-03-23 2010-04-22 Takashi Chuman Organic transistor and manufacture method thereof
US8318552B2 (en) * 2007-06-28 2012-11-27 3M Innovative Properties Company Method for forming gate structures
US20090111086A1 (en) * 2007-10-18 2009-04-30 Katz Howard E Kit for facile deposition and evaluation of semiconductor devices
KR20100054630A (ko) * 2008-11-14 2010-05-25 엘지디스플레이 주식회사 유기 박막 트랜지스터와 이의 제조방법 그리고 이를 이용한표시장치
US9625878B2 (en) 2009-03-10 2017-04-18 Drexel University Dynamic time multiplexing fabrication of holographic polymer dispersed liquid crystals for increased wavelength sensitivity
CN102379042B (zh) * 2009-04-10 2015-04-29 三菱化学株式会社 场效应晶体管、其制造方法以及使用了该场效应晶体管的电子器件
US9752932B2 (en) 2010-03-10 2017-09-05 Drexel University Tunable electro-optic filter stack
EP2657960A1 (en) * 2010-12-22 2013-10-30 Mitsubishi Chemical Corporation Field-effect transistor, process for producing the same, and electronic device including the same
US10008443B2 (en) 2012-04-30 2018-06-26 California Institute Of Technology Implant device
CN104271165B (zh) * 2012-04-30 2018-04-17 加州理工学院 高引脚数植入物器件及其制造方法
US9781842B2 (en) 2013-08-05 2017-10-03 California Institute Of Technology Long-term packaging for the protection of implant electronics
US10274819B2 (en) * 2015-02-05 2019-04-30 Taiwan Semiconductor Manufacturing Company, Ltd. EUV pellicle fabrication methods and structures thereof
WO2017040302A1 (en) * 2015-08-28 2017-03-09 California Institute Of Technology Implant device and method of making the same
CN108735915B (zh) * 2017-04-14 2021-02-09 上海视涯技术有限公司 用于oled蒸镀的荫罩及其制作方法、oled面板的制作方法
JP2019533761A (ja) * 2017-09-27 2019-11-21 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板をマスクするためのマスク装置、基板を処理するための装置、およびその方法

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US100779A (en) * 1870-03-15 Improved animal-trap
US195929A (en) * 1877-10-09 Improvement in take-ups for knitting-machines
US152691A (en) * 1874-06-30 Improvement in ironing-boards
US105365A (en) * 1870-07-12 Improvement in corn-planter
US150384A (en) * 1874-04-28 Improvement in valve-motions
US151118A (en) * 1874-05-19 Improvement in carrbkakes
US3851379A (en) * 1973-05-16 1974-12-03 Westinghouse Electric Corp Solid state components
US4065781A (en) * 1974-06-21 1977-12-27 Westinghouse Electric Corporation Insulated-gate thin film transistor with low leakage current
NL7413977A (nl) * 1974-10-25 1976-04-27 Philips Nv Aanbrengen van een geleiderlaagpatroon met op een geringe onderlinge afstand gelegen delen, in het bijzonder bij de vervaardiging van half- geleiderinrichtingen.
JPS52147063A (en) * 1976-06-02 1977-12-07 Toshiba Corp Semiconductor electrode forming method
JPS5462984A (en) * 1978-09-22 1979-05-21 Hitachi Ltd Masking deposition method
US4262296A (en) * 1979-07-27 1981-04-14 General Electric Company Vertical field effect transistor with improved gate and channel structure
DE3128982C2 (de) * 1981-07-22 1985-12-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung mindestens eines Josephson-Tunnelelementes
US4469719A (en) * 1981-12-21 1984-09-04 Applied Magnetics-Magnetic Head Divison Corporation Method for controlling the edge gradient of a layer of deposition material
DE3604368A1 (de) * 1985-02-13 1986-08-14 Sharp K.K., Osaka Verfahren zur herstellung eines duennfilm-transistors
US4776868A (en) * 1985-09-09 1988-10-11 Corning Glass Works Lenses and lens arrays
US4679311A (en) * 1985-12-12 1987-07-14 Allied Corporation Method of fabricating self-aligned field-effect transistor having t-shaped gate electrode, sub-micron gate length and variable drain to gate spacing
US4883770A (en) * 1986-09-19 1989-11-28 Hewlett-Packard Company Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication
JPS63172121A (ja) * 1987-01-09 1988-07-15 Matsushita Electric Ind Co Ltd 液晶表示パネルの製造法
JP2813428B2 (ja) * 1989-08-17 1998-10-22 三菱電機株式会社 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置
FR2662290B1 (fr) 1990-05-15 1992-07-24 France Telecom Procede de realisation d'un ecran d'affichage a matrice active et a condensateurs de stockage et ecran obtenu par ce procede.
GB9114018D0 (en) 1991-06-28 1991-08-14 Philips Electronic Associated Thin-film transistor manufacture
US5294869A (en) 1991-12-30 1994-03-15 Eastman Kodak Company Organic electroluminescent multicolor image display device
US5294870A (en) 1991-12-30 1994-03-15 Eastman Kodak Company Organic electroluminescent multicolor image display device
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
CN1095204C (zh) * 1993-03-12 2002-11-27 株式会社半导体能源研究所 半导体器件和晶体管
US5641611A (en) 1995-08-21 1997-06-24 Motorola Method of fabricating organic LED matrices
US5625199A (en) 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
US5612228A (en) * 1996-04-24 1997-03-18 Motorola Method of making CMOS with organic and inorganic semiconducting region
US6037712A (en) 1996-06-10 2000-03-14 Tdk Corporation Organic electroluminescence display device and producing method thereof
JP2833605B2 (ja) * 1997-02-07 1998-12-09 日本電気株式会社 発光ディスプレイの製造方法
JP3999837B2 (ja) 1997-02-10 2007-10-31 Ｔｄｋ株式会社 有機エレクトロルミネッセンス表示装置
US5946551A (en) * 1997-03-25 1999-08-31 Dimitrakopoulos; Christos Dimitrios Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric
JPH10319870A (ja) * 1997-05-15 1998-12-04 Nec Corp シャドウマスク及びこれを用いたカラー薄膜ｅｌ表示装置の製造方法
AU751935B2 (en) * 1998-06-19 2002-08-29 Mathias Bonse An integrated inorganic/organic complementary thin-film transistor circuit and a method for its production
KR100451381B1 (ko) * 1998-07-30 2005-06-01 엘지.필립스 엘시디 주식회사 박막트랜지스터및그제조방법
GB9817745D0 (en) 1998-08-15 1998-10-14 Philips Electronics Nv Manufacture of electronic devices comprising thin-film circuit elements
JP2000132762A (ja) 1998-10-27 2000-05-12 Matsushita Electric Works Ltd 受光量表示ユニット付き光電式分離型感知器及び波形確認端子ユニット付き光電式分離型感知器
US6384529B2 (en) 1998-11-18 2002-05-07 Eastman Kodak Company Full color active matrix organic electroluminescent display panel having an integrated shadow mask
ATE450895T1 (de) 1999-07-21 2009-12-15 E Ink Corp Bevorzugte methode, elektrische leiterbahnen für die kontrolle eines elektronischen displays herzustellen
JP4053209B2 (ja) 2000-05-01 2008-02-27 三星エスディアイ株式会社 有機ｅｌディスプレイの製造方法
JP2002050764A (ja) * 2000-08-02 2002-02-15 Matsushita Electric Ind Co Ltd 薄膜トランジスタ、アレイ基板、液晶表示装置、有機ｅｌ表示装置およびその製造方法
US6791258B2 (en) 2001-06-21 2004-09-14 3M Innovative Properties Company Organic light emitting full color display panel
US20030097010A1 (en) 2001-09-27 2003-05-22 Vogel Dennis E. Process for preparing pentacene derivatives
KR20040044998A (ko) 2001-09-27 2004-05-31 쓰리엠 이노베이티브 프로퍼티즈 컴파니 치환 펜타센 반도체
US6897164B2 (en) 2002-02-14 2005-05-24 3M Innovative Properties Company Aperture masks for circuit fabrication
US20030151118A1 (en) 2002-02-14 2003-08-14 3M Innovative Properties Company Aperture masks for circuit fabrication
US6821348B2 (en) 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication

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