JP2008509573A - 低利用度プロセスにおける流れ及び圧力勾配の除去 - Google Patents
低利用度プロセスにおける流れ及び圧力勾配の除去 Download PDFInfo
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- JP2008509573A JP2008509573A JP2007525680A JP2007525680A JP2008509573A JP 2008509573 A JP2008509573 A JP 2008509573A JP 2007525680 A JP2007525680 A JP 2007525680A JP 2007525680 A JP2007525680 A JP 2007525680A JP 2008509573 A JP2008509573 A JP 2008509573A
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Abstract
【選択図】 図1
Description
[0001]本発明は、半導体製造及び処理の分野に係り、特に、デカップルドプラズマ窒化、急速加熱処理及び化学気相堆積によって達成される低利用度プロセスに関する。
[0002]低種子利用度プロセス(Low speciesutilization process)とは、デカップルドプラズマ窒化(DPN)により窒素を二酸化シリコンゲート誘電体層へ拡散し、急速加熱処理(RTP)又は化学気相堆積(CVD)により二酸化シリコン膜を堆積し、CVDによりシリコンエピタキシャル層を堆積することを含む。これらの低種子利用度プロセスの各々においては、そのプロセスが行われる基板に亘って非常に一様な薄膜又は原子の拡散を得ることが重要である。何故ならば、デバイスをより小さくしていくにつれて、より薄い膜及び原子の基板へのより低い濃度拡散が必要とされるからである。また、より薄い膜及び原子の基板へのより低い濃度拡散とするためには、基板に亘っての膜厚又は拡散濃度の変動をほとんどなくすることが必要となる。
[0010]本発明の別の態様として、無流れ処理のために設計された反応チャンバについて説明する。
[0041]1つの実施形態において、低種子利用度プロセスは、CVDによる薄膜の形成である。この薄膜は、シリコン基板上に形成される単結晶エピタキシャル層、ポリシリコン層又はアモルファスシリコン層の如きシリコン膜でもよい。図9は、シリコンエピタキシャル層910がシリコン基板810上に形成されるような実施形態を例示している。シリコン基板810上に任意のシリコン膜を形成するためには、反応ガスは、水素(H2)の如きキャリアガスと組み合わせたシラン(SiH4)又はジクロロシラン(SiH2Cl2)の如きシリコン含有ガスでもよい。シリコン含有ガスとの混合物における水素の量は、約90%及び98%の範囲内でもよい。反応ガスは、特定の厚さにエピタキシャルシリコン膜910を形成するに十分な反応ガスが与えられるまで、CVDチャンバ800内へ流される。単結晶エピタキシャル膜910の厚さは、約20オングストローム及び500オングストロームの範囲内でもよく、さらに特定すると、約100オングストロームである。内部890内への反応ガスの流れは、ブロック702にてCVDチャンバ800内の圧力が安定化されるまでは、停止されない。CVDチャンバ800内の安定化される圧力は、約10トール−700トールの範囲内であり、更に特定すると、約100トールである。1つの実施形態において、CVDチャンバ800内の圧力は、CVDチャンバ800の内部890内の圧力が安定化されるまで、圧力制御弁を調整することにより、真空ポンプを通してCVDチャンバ800から次第によりゆっくりとした割合でガスを流し出していくことにより、安定化される。流量を減少させることにより圧力が安定化されるとき、圧力コントローラにより、処理中にその安定な圧力が維持される。別の実施形態では、CVDチャンバ800の内部空間の圧力安定化の全てのパラメータを制御するようにプログラムされたソフトウエアが使用される。この実施形態においては、ガスの流量の逓減を制御する命令のセットを記憶するメモリを有する機械読取り可能な媒体を結合したシステムコントローラによって、ガスの流量が低減させられる。ガスの流量は、CVDチャンバ800内に所定の圧力が達成されるところまで逓減され、それから、システムコントローラに結合された機械読取り可能な媒体のメモリに記憶された命令のセットにより、ガスの流れが停止されている間CVDチャンバ800内の圧力が安定化される。ガスの流れを停止する前のCVDチャンバ800内の温度は、反応ガスの反応を生ぜしめるに十分な温度ではない。ある実施形態では、ガスの流れを停止する前のCVDチャンバ800の内部890内の温度は、ほぼ室温でもよい。
Claims (45)
- ガスをチャンバ内へ流すステップと、
上記チャンバ内へのガスの流れを停止するステップと、
上記チャンバ内の圧力及び流れ勾配を最小化した後に低種子利用度プロセス(a low species utilization process)を行うステップと、
を備えた方法。 - 上記チャンバ内へのガスの流れを停止するステップは、上記チャンバ内の圧力を安定化し、上記チャンバのゲート弁を閉じ、更に、上記チャンバ内へのガスの流れを停止している間に上記チャンバ内の圧力を維持することを含む、請求項1に記載の方法。
- 上記低種子利用度プロセスを行うステップは、30オングストロームよりも小さい厚さを有する膜を堆積することを含む、請求項1に記載の方法。
- 上記低種子利用度プロセスを行うステップは、約1×e14原子/cm2及び1×e16原子/cm2の範囲内で基板内へ原子を拡散させることを含む、請求項1に記載の方法。
- 上記低種子利用度プロセスを行うステップは、デカップルドプラズマ窒化を含む、請求項1に記載の方法。
- 上記低種子利用度プロセスを行うステップは、膜を堆積するための急速加熱処理を含む、請求項1に記載の方法。
- 上記低種子利用度プロセスを行うステップは、化学気相堆積を含む、請求項1に記載の方法。
- 上記化学気相堆積は、基板上にエピタキシャル層を成長させることを含む、請求項7に記載の方法。
- 上記低種子利用度プロセスを行うステップは、原子層堆積を含む、請求項1に記載の方法。
- プラズマチャンバ内へガスを流すステップと、
上記プラズマチャンバ内へのガスの流れを停止するステップと、
上記プラズマチャンバ内へのガスの流れを停止した後プラズマを発生するステップと、
を備えた方法。 - 上記プラズマを発生する前に上記プラズマチャンバ内の圧力を安定化するステップを更に備えた、請求項10に記載の方法。
- 上記プラズマを発生している間に上記プラズマチャンバ内の安定な圧力を維持するステップを更に備えた、請求項10に記載の方法。
- 上記プラズマを発生している間に基板内へガスを拡散させるステップを更に備えた、請求項10に記載の方法。
- 上記基板内へガスを拡散させるステップは、二酸化シリコンゲート内へ窒素ガスを拡散させることを含む、請求項13に記載の方法。
- ある内部圧力を有するデカップルドプラズマ窒化チャンバ内へ窒素ガスを流すステップと、
上記デカップルドプラズマ窒化チャンバのゲート弁を閉じるステップと、
上記デカップルドプラズマ窒化チャンバの内部圧力を安定化して安定な圧力を得るステップと、
上記デカップルドプラズマ窒化チャンバ内へのガスの流れを停止している間に上記デカップルドプラズマ窒化チャンバ内の安定な圧力を維持するステップと、
上記チャンバ内への窒素ガスの流れを停止した後且つ上記チャンバの内部圧力を安定化した後にプラズマを発生するステップと、
を備えた方法。 - 上記プラズマを発生するステップは、300mmウエハ上の二酸化シリコン膜内へ約1×1014原子/cm2及び8×1014原子/cm2の範囲内にて窒素を注入することを含む、請求項15に記載の方法。
- 上記プラズマを発生するステップは、上記プラズマ窒化チャンバの屋根の周りにコイルを設け、該コイルを無線周波数(RF)電力で付勢することを含む、請求項15に記載の方法。
- 上記デカップルドプラズマ窒化チャンバの内部圧力を安定化するステップは、上記内部圧力を約5ミリトール及び95ミリトール内とすることを含む、請求項15に記載の方法。
- 上記デカップルドプラズマ窒化チャンバの内部圧力を安定化するステップは、上記内部圧力を約20ミリトールとすることを含む、請求項15に記載の方法。
- プラズマを発生している間に上記安定化された内部圧力を維持するステップを更に含む、請求項15に記載の方法。
- 上記デカップルドプラズマ窒化チャンバ内の安定な圧力を維持するステップは、約10sccm/秒及び50sccm/秒の範囲内の割合で上記窒素ガスの流れを逓減することを含む、請求項15に記載の方法。
- 上記基板内へ窒素を注入するステップは、約30Wから300Wの範囲内で実効無線周波数を加えることを含む、請求項15に記載の方法。
- 上記基板内へ窒素を注入するステップは、約150Wの実効無線周波数を加えることを含む、請求項15に記載の方法。
- 基板を含む急速加熱処理チャンバ内へ反応ガスを流すステップと、
上記反応ガスの反応を生ぜしめるには十分でない第1の温度で上記急速加熱処理チャンバ内へのガスの流れを停止するステップと、
上記急速加熱処理チャンバ内へのガスの流れを停止した後に上記反応ガスの反応を生ぜしめるに十分な第2の温度まで上記第1の温度を上昇させるステップと、
上記第2の温度で上記基板上に膜を形成するステップと、
を備えた方法。 - 上記チャンバ内へ反応ガスを流すステップは、上記チャンバ内へ水素(H2)及び酸素(O2)ガスの混合体を流すことを含む、請求項24に記載の方法。
- 上記チャンバ内へ反応ガスを流すステップは、上記チャンバ内へ酸素ガスを流すことを含む、請求項24に記載の方法。
- 上記急速加熱処理チャンバ内へ反応ガスを流すステップは、約5オングストローム及び50オングストロームの範囲内の厚さを有する膜を成長させるに十分な量の反応ガスを流すことを含む、請求項24に記載の方法。
- 上記反応ガスの反応を生ぜしめるには十分でない第1の温度で、上記急速加熱処理チャンバ内へのガスの流れを停止する前に上記急速加熱処理チャンバ内の内部圧力を安定化するステップを更に含む、請求項24に記載の方法。
- 上記ウエハ上に膜を形成するステップは、二酸化シリコン膜を堆積することを含む、請求項24に記載の方法。
- 上記第2の温度は、約800℃及び1100℃の範囲内の温度である請求項24に記載の方法。
- 基板を含む化学気相堆積チャンバ内へ反応ガスを流すステップと、
上記反応ガスの反応を生ぜしめるには十分ではない第1の温度で上記化学気相堆積チャンバ内へのガスの流れを停止するステップと、
上記化学気相堆積チャンバ内へのガスの流れを停止した後に上記反応ガスの反応を生ぜしめるに十分な第2の温度まで上記第1の温度を上昇させるステップと、
上記第2の温度で上記基板上に膜を形成するステップと、
を備えた方法。 - 上記化学気相堆積チャンバ内へ反応ガスを流すステップは、シリコン含有ガス、水素ガス及びマーカーの混合体を上記化学気相堆積チャンバ内へ流すことを含む、請求項31に記載の方法。
- 上記化学気相堆積チャンバ内へ反応ガスを流すステップは、約5オングストローム及び500オングストロームの範囲内の厚さを有する膜を成長させるに十分な量の反応ガスを流すことを含む、請求項31に記載の方法。
- 上記化学気相堆積チャンバ内へ反応ガスを流すステップは、約100オングストロームの厚さを有する膜を成長させるに十分な量の反応ガスを流すことを含む、請求項31に記載の方法。
- 上記反応ガスの反応を生ぜしめるには十分でない第1の温度で、上記化学気相堆積チャンバ内へのガスの流れを停止する前に上記化学気相堆積チャンバ内の内部圧力を安定化するステップを更に備えた、請求項31に記載の方法。
- 上記基板上に膜を形成するステップは、シリコンウエハ上にエピタキシャルシリコン層を成長させることを含む、請求項31に記載の方法。
- 上記基板上に膜を形成するステップは、シリコンウエハ上にエピタキシャルポリシリコン層を成長させることを含む、請求項31に記載の方法。
- 上記基板上に膜を形成するステップは、シリコンウエハ上にアモルファスシリコン層を成長させることを含む、請求項31に記載の方法。
- 上記基板上に膜を形成するステップは、ウエハ上に二酸化シリコン層を成長させることを含む、請求項31に記載の方法。
- 上記基板上に膜を形成するステップは、ウエハ上に窒化シリコン層を成長させることを含む、請求項31に記載の方法。
- 処理チャンバと、
上記処理チャンバを制御するためのシステムコントローラと、
上記コントローラに結合し、上記処理チャンバの圧力安定化の動作を制御する命令のセットを記憶するメモリを有する機械読取り可能な媒体と、
を備え、
上記命令のセットは、更に、上記処理チャンバ内へ流れるガスのガス流量を低減し、上記処理チャンバのゲート弁を閉じる前に上記処理チャンバ内の圧力を安定化し、上記処理チャンバ内へのガスの流れを停止している間に上記処理チャンバ内の圧力を維持することにより、上記処理チャンバ内の圧力安定化の全てのパラメータを制御する、
基板処理システム。 - 上記処理チャンバは、デカップルドプラズマ窒化チャンバである、請求項41に記載の基板処理システム。
- 上記処理チャンバは、急速加熱処理チャンバである、請求項41に記載の基板処理システム。
- 上記処理チャンバは、化学気相堆積チャンバである、請求項41に記載の基板処理システム。
- 上記命令のセットは、更に、上記処理チャンバ内へのガスの流れを停止した後に低種子利用度プロセスを行うことによる、上記処理チャンバ内の圧力安定化の全てのパラメータを制御する、請求項41に記載の基板処理システム。
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WO2013094680A1 (ja) * | 2011-12-20 | 2013-06-27 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および気化装置 |
JP2020017697A (ja) * | 2018-07-27 | 2020-01-30 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
WO2020022319A1 (ja) * | 2018-07-27 | 2020-01-30 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JP7186032B2 (ja) | 2018-07-27 | 2022-12-08 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
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KR20070042190A (ko) | 2007-04-20 |
US20060029747A1 (en) | 2006-02-09 |
JP5042022B2 (ja) | 2012-10-03 |
CN101010783A (zh) | 2007-08-01 |
US7955646B2 (en) | 2011-06-07 |
WO2006020513A1 (en) | 2006-02-23 |
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