JP2008288297A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2008288297A JP2008288297A JP2007130143A JP2007130143A JP2008288297A JP 2008288297 A JP2008288297 A JP 2008288297A JP 2007130143 A JP2007130143 A JP 2007130143A JP 2007130143 A JP2007130143 A JP 2007130143A JP 2008288297 A JP2008288297 A JP 2008288297A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 229910000679 solder Inorganic materials 0.000 claims abstract description 178
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
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- 239000010703 silicon Substances 0.000 description 2
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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Abstract
【解決手段】半導体装置100は、半導体チップ10と、半導体チップ10に設けられた第1形状90を有する第1電極30と、半導体チップ10が実装された実装部20と、実装部20に設けられた、第1形状90とは異なる第2形状92を有する第2電極32と、第1電極30及び前記第2電極32を接合する第1半田バンプ40と、を具備し、第1半田バンプ40は、第1電極30及び前記第2電極32の表面全体を覆っている。第1半田バンプ40に対してX線による検査を行い、第1半田バンプ40の形状から接合状態の良否を判定する。
【選択図】図5
Description
20 第2半導体チップ及び実装部
30 第1電極
32 第2電極
34 第3電極
40 第1半田バンプ
42 第2半田バンプ
50 半田バンプ接合部
60 X線撮影部
70 制御部
80 第1基準形状
82 第2基準形状
90 第1形状
92 第2形状
94 第3形状
100 半導体装置
110 半導体製造装置
Claims (15)
- 半導体チップと、
前記半導体チップに設けられた第1形状を有する第1電極と、
前記半導体チップが実装された実装部と、
前記実装部に設けられた、前記第1形状とは異なる第2形状を有する第2電極と、
前記第1電極及び前記第2電極を接合する第1半田バンプと、
を具備し、
前記第1半田バンプは、前記第1電極及び前記第2電極の表面全体を覆っていることを特徴とする半導体装置。 - 前記第2形状は、前記第1形状と重ね合わせた場合に、前記第2形状の少なくとも一部が前記第1形状からはみ出すことを特徴とする請求項1記載の半導体装置。
- 前記実装部に設けられた、前記第2形状とは異なる第3形状を有する第3電極と、
前記第1電極及び前記第3電極を接合する第2半田バンプと、
を具備することを特徴とする請求項1または2記載の半導体装置。 - 前記第2電極は、前記第3電極に囲まれていることを特徴とする請求項3記載の半導体装置。
- 前記第2電極は、前記実装部の中心に設けられていることを特徴とする請求項1から4のうちいずれか1項に記載の半導体装置。
- 第1形状を有する第1電極が設けられた半導体チップを、前記第1形状とは異なる第2形状を有する第2電極が設けられた実装部に、前記第1電極及び前記第2電極を、第1半田バンプを介して接合することで実装する第1半田バンプ接合工程と、
前記第1半田バンプをX線により撮影し、前記第1半田バンプ及び前記第2電極の接合状態の良否を判定するX線検査工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記X線検査工程は、前記第1半田バンプが前記第2電極の表面全体を覆っている場合に良品と判定することを特徴とする請求項6記載の半導体装置の製造方法。
- 前記実装部に設けられた、前記第2形状とは異なる第3形状を有する第3電極を、第2半田バンプを介して前記第1電極に接合する第2半田バンプ接合工程を有し、
前記X線検査工程は、前記第1半田バンプの形状が、前記第2半田バンプの形状と異なる場合に良品と判定することを特徴とする請求項6記載の半導体装置の製造方法。 - 前記X線検査工程は、前記第1半田バンプをX線により撮影した陰影が、前記第1形状と前記第2形状を重ねた形状に対応する第1基準形状と同じである場合に良品と判定することを特徴とする請求項6記載の半導体装置の製造方法。
- 前記第1半田バンプ接合工程は、前記第1電極の表面に形成された半田ボールから前記第1半田バンプを形成する工程を含み、
前記X線検査工程は、前記第1半田バンプをX線により撮影した陰影が、前記半田ボールの形状に対応する第2基準形状と異なる場合に良品と判定することを特徴とする請求項6記載の半導体装置の製造方法。 - 第1形状を有する第1電極が設けられた半導体チップ、及び前記第1形状とは異なる第2形状を有する第2電極が設けられた実装部を、第1半田バンプを介して接合する半田バンプ接合部と、
前記第1半田バンプをX線により撮影するX線撮影部と、
前記X線撮影部にて得られた撮影画像から、前記第1半田バンプ及び前記第2電極の接合状態の良否を判定する制御部と、
を具備することを特徴とする半導体装置の製造装置。 - 前記制御部は、前記第1半田バンプが前記第2電極の表面全体を覆っている場合に、良品と判定することを特徴とする請求項11記載の半導体装置の製造装置。
- 前記半田バンプ接合部は、前記実装部に設けられた、前記第2形状とは異なる第3形状を有する第3電極を、第2半田バンプを介して前記第1電極に接合し、
前記制御部は、前記第1半田バンプの形状が、前記第2半田バンプの形状と異なる場合に良品と判定することを特徴とする請求項11記載の半導体装置の製造装置。 - 前記制御部は、前記第1半田バンプをX線により撮影した陰影が、前記第1形状と前記第2形状を重ねた形状に対応する第1基準形状と同じである場合に良品と判定することを特徴とする請求項11記載の半導体装置の製造装置。
- 前記半田バンプ接合部は、前記第1電極の表面に形成された半田ボールから前記第1半田バンプを形成し、
前記制御部は、前記第1半田バンプをX線により撮影した陰影が、前記半田ボールに対応する第2基準形状と異なる場合に良品と判定することを特徴とする請求項11記載の半導体装置の製造装置。
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US20080303144A1 (en) | 2008-12-11 |
JP5350604B2 (ja) | 2013-11-27 |
US20110057309A1 (en) | 2011-03-10 |
US7816788B2 (en) | 2010-10-19 |
US8274158B2 (en) | 2012-09-25 |
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