JP2008277805A - 光起電力装置及びその製造方法 - Google Patents
光起電力装置及びその製造方法 Download PDFInfo
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- JP2008277805A JP2008277805A JP2008097805A JP2008097805A JP2008277805A JP 2008277805 A JP2008277805 A JP 2008277805A JP 2008097805 A JP2008097805 A JP 2008097805A JP 2008097805 A JP2008097805 A JP 2008097805A JP 2008277805 A JP2008277805 A JP 2008277805A
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- 238000004519 manufacturing process Methods 0.000 title claims description 45
- 239000010410 layer Substances 0.000 claims abstract description 285
- 239000004065 semiconductor Substances 0.000 claims abstract description 239
- 239000000758 substrate Substances 0.000 claims abstract description 186
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- 238000000034 method Methods 0.000 claims abstract description 41
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 17
- 238000000926 separation method Methods 0.000 claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 239000012535 impurity Substances 0.000 claims description 69
- 150000002500 ions Chemical class 0.000 claims description 34
- 238000010438 heat treatment Methods 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 23
- 239000001257 hydrogen Substances 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- 230000001681 protective effect Effects 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 150000001282 organosilanes Chemical class 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 9
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 claims description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 8
- 125000004429 atom Chemical group 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 4
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims description 4
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 claims description 4
- 239000005407 aluminoborosilicate glass Substances 0.000 claims description 3
- 239000005354 aluminosilicate glass Substances 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
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- 230000005284 excitation Effects 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- RSNQKPMXXVDJFG-UHFFFAOYSA-N tetrasiloxane Chemical compound [SiH3]O[SiH2]O[SiH2]O[SiH3] RSNQKPMXXVDJFG-UHFFFAOYSA-N 0.000 claims 2
- WYEQAOSMOYTHJX-UHFFFAOYSA-N 1,1,2,2,3,3,4,4-octamethylcyclohexane Chemical compound CC1(C)CCC(C)(C)C(C)(C)C1(C)C WYEQAOSMOYTHJX-UHFFFAOYSA-N 0.000 claims 1
- SZKKRCSOSQAJDE-UHFFFAOYSA-N Schradan Chemical group CN(C)P(=O)(N(C)C)OP(=O)(N(C)C)N(C)C SZKKRCSOSQAJDE-UHFFFAOYSA-N 0.000 claims 1
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- 229910052710 silicon Inorganic materials 0.000 abstract description 18
- 239000010703 silicon Substances 0.000 abstract description 18
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 11
- 239000010409 thin film Substances 0.000 abstract description 5
- 239000002344 surface layer Substances 0.000 abstract description 4
- 238000000605 extraction Methods 0.000 description 15
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 10
- 239000004332 silver Substances 0.000 description 10
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- 235000012431 wafers Nutrition 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- -1 halogen ions Chemical class 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000006664 bond formation reaction Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000005660 hydrophilic surface Effects 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
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- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
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- 238000003776 cleavage reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
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- 230000007935 neutral effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
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- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- 238000010792 warming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- H01L31/0224—Electrodes
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Abstract
【解決手段】絶縁表面を有する基板若しくは絶縁基板に設けた単結晶半導体層を光電変換層とする光起電力装置であって、単結晶半導体層は絶縁層を介して該基板と接合させる所謂SOI構造を備えたことを要旨とする。光電変換層としての機能を奏する単結晶半導体層は単結晶半導体基板の表層部を剥離して転置されたものが適用される。
【選択図】図1
Description
第2不純物半導体層109は、単結晶半導体基板111の浅い領域に、p型を付与する不純物元素として硼素をドーピングする。第2不純物半導体層109は本形態の光起電力装置において、光入射側と反対側の面に配置され、裏面電界(BSF:Back Surface Field)を形成する。
102 接合層
103 半導体層
104 第1電極
105 第1不純物半導体層
106 保護膜
107 第2電極
108 バリア層
109 第2不純物半導体層
110 酸化シリコン層
111 単結晶半導体基板
112 表面保護膜
113 剥離層
114 窒化シリコン層
115 絶縁層
116 取出電極
117 コンタクトホール
Claims (17)
- 絶縁表面を有する基板に密接する接合層と、前記接合層上の第1電極と、前記第1電極上の単結晶半導体層と、前記単結晶半導体層の前記第1電極とは反対側の面に形成された第1不純物半導体層と、前記第1不純物半導体層上に設けられた保護膜と、前記第1不純物半導体層と接する第2電極とを有することを特徴とする光起電力装置。
- 基板の一面に設けられたバリア層と、前記バリア層上に設けられた第1接合層と、前記第1接合層と密接する第2接合層と、前記第2接合層上の第1電極と、前記第1電極上の単結晶半導体層と、前記単結晶半導体層の前記第1電極とは反対側の面に形成された第1不純物半導体層と、前記第1不純物半導体層上に設けられた保護膜と、前記第1不純物半導体層と接する第2電極とを有することを特徴とする光起電力装置。
- 基板の一面に設けられたバリア層と、前記バリア層上に設けられた第1接合層と、前記第1接合層側の第1面に酸化シリコン層が形成され、前記第1接合層と反対側の第2面に第1不純物半導体層と第2不純物半導体層が区分して形成された単結晶半導体層と、前記第1不純物半導体層と接する第2電極と、前記第2不純物半導体層と接する第1電極と、前記単結晶半導体層の前記第2面であって、前記第1電極と前記第2電極との間に設けられた保護層とを有し、前記第1接合層と前記酸化シリコン層とが接合していることを特徴とする光起電力装置。
- 請求項1において、前記第1電極に接して、前記単結晶半導体層に第2不純物半導体領域が設けられていることを特徴とする光起電力装置。
- 請求項4において、前記接合層と、前記第1電極との間に、窒化シリコン層が設けられていることを特徴とする光起電力装置。
- 請求項1乃至5のいずれか一項において、前記単結晶半導体層の厚さは0.1μm乃至10μmであることを特徴とする光起電力装置。
- 請求項1乃至6のいずれか一項において、前記基板が、アルミノシリケートガラス、アルミノホウケイ酸ガラス、バリウムホウケイ酸ガラスから選ばれた一種であることを特徴とする光起電力装置。
- 水素、ヘリウム及びハロゲンから選ばれたソースガスをプラズマ励起して生成された一種類のイオン、又は同一の原子から成り質量の異なる複数種類のイオンを単結晶半導体基板に導入して、該単結晶半導体基板の表面から所定の深さの領域に剥離層を形成し、
前記単結晶半導体基板上に有機シランガスを用いて化学気相成長法により酸化シリコン膜を形成し、
前記単結晶半導体基板と絶縁表面を有する基板を、前記酸化シリコン膜を挟んで重ね合わせて接合し、
前記単結晶半導体基板と前記絶縁表面を有する基板を重ね合わせた状態で熱処理を行い、前記剥離層に亀裂を生じさせ、前記絶縁表面を有する基板上に単結晶半導体層を残存させたまま前記単結晶半導体基板を剥離して除去し、
前記単結晶半導体層に不純物元素を添加して不純物半導体層を形成して光電変換層とすることを特徴とする光起電力装置の製造方法。 - 請求項8において、前記有機シランガスが、珪酸エチル(TEOS:Si(OC2H5)4)、トリメチルシラン(TMS:(CH3)3SiH)、テトラメチルシクロテトラシロキサン(TMCTS)、オクタメチルシクロテトラシロキサン(OMCTS)、ヘキサメチルジシラザン(HMDS)、トリエトキシシラン(SiH(OC2H5)3)、トリスジメチルアミノシラン(SiH(N(CH3)2)3)から選ばれた一種を用いることを特徴とする光起電力装置の製造方法。
- 請求項8において、前記単結晶半導体基板上に有機シランガスを用いて化学気相成長法により酸化シリコン膜を形成する温度が前記剥離層に導入した元素が離脱しない温度であり、前記熱処理が、前記剥離層に導入した元素が離脱する温度で行われることを特徴とする光起電力装置の製造方法。
- 請求項8において、前記単結晶半導体基板上に有機シランガスを用いて化学気相成長法により酸化シリコン膜を形成する温度が350℃以下であり、前記熱処理が400℃以上の温度で行われることを特徴とする光起電力装置の製造方法。
- 請求項8において、前記剥離層の形成は、H+、H2 +、H3 +イオンを導入することにより行われるものであって、H+、H2 +、H3 +イオンのうち、H3 +イオンの割合が高いことを特徴とする光起電力装置の製造方法。
- 水素、ヘリウム及びハロゲンから選ばれたソースガスをプラズマ励起して生成された一種類のイオン、又は同一の原子から成り質量の異なる複数種類のイオンを単結晶半導体基板に導入して、該単結晶半導体基板の表面から所定の深さの領域に剥離層を形成し、
前記単結晶半導体基板に形成された前記剥離層よりも浅い領域に導電型を制御する不純物元素を注入して不純物半導体層を形成し、
前記不純物半導体層上に第1電極を形成し、
前記第1電極上に有機シランガスを用いて化学気相成長法により酸化シリコン膜を形成し、
前記単結晶半導体基板と絶縁表面を有する基板を、前記酸化シリコン膜を挟んで重ね合わせて接合し、
前記単結晶半導体基板と前記絶縁表面を有する基板を重ね合わせた状態で熱処理を行い、前記剥離層に亀裂を生じさせ、前記単結晶半導体基板を剥離して前記絶縁表面を有する基板上に単結晶半導体層を形成し、
前記単結晶半導体層に前記不純物半導体層とは逆導電型の不純物半導体層を形成し、
前記逆導電型の不純物半導体層を上に第2電極を形成することを特徴とする光起電力装置の製造方法。 - 請求項13において、前記有機シランガスが、珪酸エチル(TEOS:Si(OC2H5)4)、トリメチルシラン(TMS:(CH3)3SiH)、テトラメチルシクロテトラシロキサン(TMCTS)、オクタメチルシクロテトラシロキサン(OMCTS)、ヘキサメチルジシラザン(HMDS)、トリエトキシシラン(SiH(OC2H5)3)、トリスジメチルアミノシラン(SiH(N(CH3)2)3)から選ばれた一種を用いることを特徴とする光起電力装置の製造方法。
- 請求項13において、前記単結晶半導体基板上に有機シランガスを用いて化学気相成長法により酸化シリコン膜を形成する温度が前記剥離層に導入した元素が離脱しない温度であり、前記熱処理が、前記剥離層に導入した元素が離脱する温度で行われることを特徴とする光起電力装置の製造方法。
- 請求項13において、前記単結晶半導体基板上に有機シランガスを用いて化学気相成長法により酸化シリコン膜を形成する温度が350℃以下であり、前記熱処理が400℃以上の温度で行われることを特徴とする光起電力装置の製造方法。
- 請求項13において、前記剥離層の形成は、H+、H2 +、H3 +イオンを導入することにより行われるものであって、H+、H2 +、H3 +イオンのうち、H3 +イオンの割合が高いことを特徴とする光起電力装置の製造方法。
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- 2008-03-27 TW TW097111071A patent/TWI485864B/zh not_active IP Right Cessation
- 2008-03-27 US US12/078,087 patent/US20080245406A1/en not_active Abandoned
- 2008-04-04 JP JP2008097805A patent/JP5070112B2/ja not_active Expired - Fee Related
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KR20100061348A (ko) * | 2008-11-27 | 2010-06-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기판의 제작 방법 및 반도체 장치의 제작 방법 |
JP2010153823A (ja) * | 2008-11-27 | 2010-07-08 | Semiconductor Energy Lab Co Ltd | 半導体基板の作製方法及び半導体装置の作製方法 |
KR101582247B1 (ko) * | 2008-11-27 | 2016-01-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기판의 제작 방법 및 반도체 장치의 제작 방법 |
JP2012516573A (ja) * | 2009-01-29 | 2012-07-19 | ファースト ソーラー インコーポレイテッド | 改良された結晶配向性を有する太陽光発電装置 |
JP2011014892A (ja) * | 2009-06-05 | 2011-01-20 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
JP2014192196A (ja) * | 2013-03-26 | 2014-10-06 | Rohm Co Ltd | 有機薄膜太陽電池およびその製造方法、および電子機器 |
Also Published As
Publication number | Publication date |
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TW200849617A (en) | 2008-12-16 |
CN101652867A (zh) | 2010-02-17 |
US8828789B2 (en) | 2014-09-09 |
TWI485864B (zh) | 2015-05-21 |
US20110124151A1 (en) | 2011-05-26 |
JP5070112B2 (ja) | 2012-11-07 |
EP2135295A4 (en) | 2014-05-21 |
KR20100016263A (ko) | 2010-02-12 |
KR101503675B1 (ko) | 2015-03-18 |
US20080245406A1 (en) | 2008-10-09 |
EP2135295A1 (en) | 2009-12-23 |
CN101652867B (zh) | 2012-08-08 |
WO2008126706A1 (en) | 2008-10-23 |
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