JP5070112B2 - 光起電力装置及び光起電力装置の製造方法 - Google Patents
光起電力装置及び光起電力装置の製造方法 Download PDFInfo
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- JP5070112B2 JP5070112B2 JP2008097805A JP2008097805A JP5070112B2 JP 5070112 B2 JP5070112 B2 JP 5070112B2 JP 2008097805 A JP2008097805 A JP 2008097805A JP 2008097805 A JP2008097805 A JP 2008097805A JP 5070112 B2 JP5070112 B2 JP 5070112B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 218
- 239000000758 substrate Substances 0.000 claims description 167
- 239000013078 crystal Substances 0.000 claims description 106
- 239000012535 impurity Substances 0.000 claims description 62
- 150000002500 ions Chemical class 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 36
- 238000010438 heat treatment Methods 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 230000001681 protective effect Effects 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 20
- 238000000926 separation method Methods 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 claims description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 6
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 claims description 6
- 150000001282 organosilanes Chemical class 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 3
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims description 3
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 220
- 239000010408 film Substances 0.000 description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 238000000605 extraction Methods 0.000 description 15
- 239000001257 hydrogen Substances 0.000 description 14
- 229910052739 hydrogen Inorganic materials 0.000 description 14
- 238000010248 power generation Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 10
- 239000004332 silver Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- -1 halogen ions Chemical class 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006664 bond formation reaction Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 230000005660 hydrophilic surface Effects 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 239000005407 aluminoborosilicate glass Substances 0.000 description 2
- 239000005354 aluminosilicate glass Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
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Description
第2不純物半導体層109は、単結晶半導体基板111の浅い領域に、p型を付与する不純物元素として硼素をドーピングする。第2不純物半導体層109は本形態の光起電力装置において、光入射側と反対側の面に配置され、裏面電界(BSF:Back Surface Field)を形成する。
102 接合層
103 半導体層
104 第1電極
105 第1不純物半導体層
106 保護膜
107 第2電極
108 バリア層
109 第2不純物半導体層
110 酸化シリコン層
111 単結晶半導体基板
112 表面保護膜
113 剥離層
114 窒化シリコン層
115 絶縁層
116 取出電極
117 コンタクトホール
Claims (6)
- 基板と、
前記基板上の酸化シリコン膜と、
前記酸化シリコン膜上の窒化シリコン層と、
前記窒化シリコン層上の第1の電極と、
前記第1の電極上の第1の不純物半導体層と、
前記第1の不純物半導体層上の単結晶半導体層と、
前記単結晶半導体層上の第2の不純物半導体層と、保護膜と、
前記第2の不純物半導体層上の第2の電極と、
前記保護膜と、前記単結晶半導体層と、前記第1の不純物半導体層とを貫通するコンタクトホールを介して第1の電極と電気的に接続される第3の電極とを有し、
前記窒化シリコン層は、前記単結晶半導体層の側面に設けられ、
前記保護膜は、前記単結晶半導体層の側面の前記窒化シリコン層上に設けられ、
前記第2の電極と、前記第3の電極とは、同じ材料を有することを特徴とする光起電力装置。 - 請求項1において、
前記第2の電極は、櫛形状を有することを特徴とする光起電力装置。 - H + イオン、H 2 + イオン及びH 3 + イオンを単結晶半導体基板に導入して、前記単結晶半導体基板の表面から所定の深さの領域に剥離層を形成し、
前記単結晶半導体基板に形成された前記剥離層よりも浅い領域に導電型を制御する不純物元素を注入して第1の不純物半導体層を形成し、
前記第1の不純物半導体層上に、第1の電極を形成し、
前記第1の電極上に、前記単結晶半導体基板を被覆する窒化シリコン層を形成し、
前記窒化シリコン層上に、有機シランガスを用いて化学気相成長法により酸化シリコン膜を形成し、
前記単結晶半導体基板と、基板とを、前記酸化シリコン膜を挟んで重ね合わせて接合し、
前記単結晶半導体基板と、前記基板とを重ね合わせた状態で熱処理を行い、前記剥離層に亀裂を生じさせ、前記単結晶半導体基板を剥離して前記基板上に単結晶半導体層を形成し、
前記単結晶半導体層と、前記単結晶半導体層の側面の前記窒化シリコン層との上に保護膜を形成し、
前記保護膜の第1の領域に、開口部を形成し、
前記保護膜の第2の領域に、前記保護膜と、前記単結晶半導体層と、前記第1の不純物半導体層とを貫通するコンタクトホールを形成し、
前記第1の領域に露出した前記単結晶半導体層に、前記第1の不純物半導体層とは逆導電型の不純物元素を注入して第2の不純物半導体層を形成し、
前記逆導電型の第2の不純物半導体層上に、第2の電極を形成し、
前記コンタクトホールに、第3の電極を形成し、
前記第2の電極と前記第3の電極とは、同じ材料で形成され、
前記H 3 + イオンの割合は、前記H + イオン及び前記H 2 + イオンの割合より高いことを特徴とする光起電力装置の製造方法。 - 請求項3において、
前記有機シランガスが、珪酸エチル(TEOS:Si(OC2H5)4)、トリメチルシラン(TMS:(CH3)3SiH)、テトラメチルシクロテトラシロキサン(TMCTS)、オクタメチルシクロテトラシロキサン(OMCTS)、ヘキサメチルジシラザン(HMDS)、トリエトキシシラン(SiH(OC2H5)3)、トリスジメチルアミノシラン(SiH(N(CH3)2)3)から選ばれた一種を用いることを特徴とする光起電力装置の製造方法。 - 請求項3または4において、
前記単結晶半導体基板上に有機シランガスを用いて化学気相成長法により酸化シリコン膜を形成する温度が前記剥離層に導入したH + イオン、H 2 + イオン及びH 3 + イオンが離脱しない温度であり、前記熱処理が、前記剥離層に導入したH + イオン、H 2 + イオン及びH 3 + イオンが離脱する温度で行われることを特徴とする光起電力装置の製造方法。 - 請求項3または4において、
前記単結晶半導体基板上に有機シランガスを用いて化学気相成長法により酸化シリコン膜を形成する温度が350℃以下であり、前記熱処理が400℃以上の温度で行われることを特徴とする光起電力装置の製造方法。
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US20080245406A1 (en) | 2008-10-09 |
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CN101652867A (zh) | 2010-02-17 |
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