JP2008273825A5 - - Google Patents

Download PDF

Info

Publication number
JP2008273825A5
JP2008273825A5 JP2008103245A JP2008103245A JP2008273825A5 JP 2008273825 A5 JP2008273825 A5 JP 2008273825A5 JP 2008103245 A JP2008103245 A JP 2008103245A JP 2008103245 A JP2008103245 A JP 2008103245A JP 2008273825 A5 JP2008273825 A5 JP 2008273825A5
Authority
JP
Japan
Prior art keywords
article
template
sacrificial template
sacrificial
interface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008103245A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008273825A (ja
JP4958833B2 (ja
Filing date
Publication date
Priority claimed from US09/947,253 external-priority patent/US6958093B2/en
Application filed filed Critical
Publication of JP2008273825A publication Critical patent/JP2008273825A/ja
Publication of JP2008273825A5 publication Critical patent/JP2008273825A5/ja
Application granted granted Critical
Publication of JP4958833B2 publication Critical patent/JP4958833B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2008103245A 2001-09-05 2008-04-11 独立（Ａｌ、Ｇａ、Ｉｎ）Ｎを形成するための分割方法および装置 Expired - Lifetime JP4958833B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/947,253 2001-09-05
US09/947,253 US6958093B2 (en) 1994-01-27 2001-09-05 Free-standing (Al, Ga, In)N and parting method for forming same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2003524788A Division JP4401168B2 (ja) 2001-09-05 2002-08-12 独立（Ａｌ、Ｇａ、Ｉｎ）Ｎ物品を形成する方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011229598A Division JP5580803B2 (ja) 2001-09-05 2011-10-19 独立（Ａｌ、Ｇａ、Ｉｎ）Ｎ物品を形成する方法

Publications (3)

Publication Number Publication Date
JP2008273825A JP2008273825A (ja) 2008-11-13
JP2008273825A5 true JP2008273825A5 (enExample) 2010-09-30
JP4958833B2 JP4958833B2 (ja) 2012-06-20

Family

ID=25485829

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2003524788A Expired - Lifetime JP4401168B2 (ja) 2001-09-05 2002-08-12 独立（Ａｌ、Ｇａ、Ｉｎ）Ｎ物品を形成する方法
JP2008103245A Expired - Lifetime JP4958833B2 (ja) 2001-09-05 2008-04-11 独立（Ａｌ、Ｇａ、Ｉｎ）Ｎを形成するための分割方法および装置
JP2011229598A Expired - Lifetime JP5580803B2 (ja) 2001-09-05 2011-10-19 独立（Ａｌ、Ｇａ、Ｉｎ）Ｎ物品を形成する方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2003524788A Expired - Lifetime JP4401168B2 (ja) 2001-09-05 2002-08-12 独立（Ａｌ、Ｇａ、Ｉｎ）Ｎ物品を形成する方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011229598A Expired - Lifetime JP5580803B2 (ja) 2001-09-05 2011-10-19 独立（Ａｌ、Ｇａ、Ｉｎ）Ｎ物品を形成する方法

Country Status (8)

Country Link
US (1) US6958093B2 (enExample)
EP (3) EP2248931B1 (enExample)
JP (3) JP4401168B2 (enExample)
KR (2) KR100921409B1 (enExample)
CN (3) CN100420569C (enExample)
MY (1) MY130719A (enExample)
TW (1) TW593797B (enExample)
WO (1) WO2003020497A1 (enExample)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6958093B2 (en) * 1994-01-27 2005-10-25 Cree, Inc. Free-standing (Al, Ga, In)N and parting method for forming same
US6596079B1 (en) * 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
TWI226139B (en) 2002-01-31 2005-01-01 Osram Opto Semiconductors Gmbh Method to manufacture a semiconductor-component
KR101363377B1 (ko) * 2002-04-15 2014-02-14 더 리전츠 오브 더 유니버시티 오브 캘리포니아 무극성 질화 갈륨 박막의 전위 감소
US8809867B2 (en) * 2002-04-15 2014-08-19 The Regents Of The University Of California Dislocation reduction in non-polar III-nitride thin films
KR20030090996A (ko) * 2002-05-24 2003-12-01 엘지전자 주식회사 성장 챔버내에서의 레이저 리프트 오프 방법
JP4363029B2 (ja) * 2002-11-06 2009-11-11 ソニー株式会社 分割波長板フィルターの製造方法
KR100504180B1 (ko) * 2003-01-29 2005-07-28 엘지전자 주식회사 질화물 화합물 반도체의 결정성장 방법
WO2004068567A1 (de) * 2003-01-31 2004-08-12 Osram Opto Semiconductors Gmbh Dünnfilmhalbleiterbauelement und verfahren zu dessen herstellung
CN100530705C (zh) * 2003-01-31 2009-08-19 奥斯兰姆奥普托半导体有限责任公司 用于制造一个半导体元器件的方法
JP3534115B1 (ja) * 2003-04-02 2004-06-07 住友電気工業株式会社 エッジ研磨した窒化物半導体基板とエッジ研磨したＧａＮ自立基板及び窒化物半導体基板のエッジ加工方法
US7261777B2 (en) * 2003-06-06 2007-08-28 S.O.I.Tec Silicon On Insulator Technologies Method for fabricating an epitaxial substrate
EP1484794A1 (en) * 2003-06-06 2004-12-08 S.O.I. Tec Silicon on Insulator Technologies S.A. A method for fabricating a carrier substrate
US7170095B2 (en) * 2003-07-11 2007-01-30 Cree Inc. Semi-insulating GaN and method of making the same
EP1664393B1 (en) * 2003-07-14 2013-11-06 Allegis Technologies, Inc. METHOD OF PROducING GALLIUM NITRIDE LEDs
KR100506739B1 (ko) * 2003-12-23 2005-08-08 삼성전기주식회사 알루미늄(Ａｌ)을 함유한 질화물 반도체 결정 성장방법
JP5194334B2 (ja) * 2004-05-18 2013-05-08 住友電気工業株式会社 Ｉｉｉ族窒化物半導体デバイスの製造方法
JP4996463B2 (ja) * 2004-06-30 2012-08-08 クリー インコーポレイテッド 発光デバイスをパッケージするためのチップスケール方法およびチップスケールにパッケージされた発光デバイス
TWI422044B (zh) * 2005-06-30 2014-01-01 克立公司 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置
US7273798B2 (en) * 2005-08-01 2007-09-25 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Gallium nitride device substrate containing a lattice parameter altering element
DE102005052357A1 (de) * 2005-09-01 2007-03-15 Osram Opto Semiconductors Gmbh Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
DE102005052358A1 (de) * 2005-09-01 2007-03-15 Osram Opto Semiconductors Gmbh Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
US7713232B2 (en) * 2005-11-04 2010-05-11 Medrad, Inc. System for washing and processing of cells for delivery thereof to tissue
US8435879B2 (en) * 2005-12-12 2013-05-07 Kyma Technologies, Inc. Method for making group III nitride articles
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
KR101408622B1 (ko) * 2006-01-20 2014-06-17 크리, 인코포레이티드 루미포르 필름의 공간적 분리에 의한 고체 상태 발광기의 스펙트럼 컨텐츠 시프팅
KR100718118B1 (ko) * 2006-06-01 2007-05-14 삼성코닝 주식회사 크랙이 없는 ＧａＮ 벌크 단결정의 성장 방법 및 장치
EP2039812A4 (en) 2006-06-20 2010-08-11 Sumitomo Electric Industries METHOD OF PULLING AlxGa1-xN CRYSTAL AND AlxGa1-xN CRYSTAL SUBSTRATE
JP5045232B2 (ja) * 2006-06-20 2012-10-10 住友電気工業株式会社 ＡｌｘＧａ１−ｘＮ結晶の成長方法
US8698184B2 (en) 2011-01-21 2014-04-15 Cree, Inc. Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature
EP2060155A2 (en) 2006-08-23 2009-05-20 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
US8647435B1 (en) 2006-10-11 2014-02-11 Ostendo Technologies, Inc. HVPE apparatus and methods for growth of p-type single crystal group III nitride materials
CN101600819B (zh) * 2006-12-08 2012-08-15 卢米洛格股份有限公司 通过在防止基材边缘的生长的基材上的外延生长制造氮化物单晶的方法
JP4899911B2 (ja) * 2007-02-16 2012-03-21 日立電線株式会社 Ｉｉｉ族窒化物半導体基板
US20080303033A1 (en) * 2007-06-05 2008-12-11 Cree, Inc. Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates
US7863635B2 (en) * 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
US20120125256A1 (en) * 2007-10-06 2012-05-24 Solexel, Inc. Apparatus and method for repeatedly fabricating thin film semiconductor substrates using a template
JP2011501466A (ja) * 2007-10-26 2011-01-06 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド １つまたは複数の発光体を有する照明デバイス、およびその製作方法
JP5262203B2 (ja) * 2008-03-11 2013-08-14 住友電気工業株式会社 化合物半導体単結晶の製造装置および製造方法
DE102008001005B4 (de) 2008-04-04 2011-06-22 Karlsruher Institut für Technologie, 76131 Verfahren zur Herstellung eines Schichtverbundes mit epitaktisch gewachsenen Schichten aus einem magnetischen Formgedächtnis-Material und Schichtverbund mit epitaktischen Schichten aus einem magnetischen Formgedächtnis-Material sowie dessen Verwendung
CN102239538A (zh) * 2008-09-24 2011-11-09 S.O.I.探测硅绝缘技术公司 形成经松弛半导体材料层、半导体结构、装置的方法及包含经松弛半导体材料层、半导体结构、装置的工程衬底
US8637383B2 (en) 2010-12-23 2014-01-28 Soitec Strain relaxation using metal materials and related structures
EP2345060B1 (en) 2008-10-30 2013-12-04 Soitec Methods of forming layers of semiconductor material having reduced lattice strain and engineered substrates including same
CN101740331B (zh) * 2008-11-07 2012-01-25 东莞市中镓半导体科技有限公司 利用固体激光器无损剥离GaN与蓝宝石衬底的方法
CN101555627B (zh) * 2009-04-30 2012-01-25 苏州纳晶光电有限公司 一种氮化镓基外延膜的激光剥离方法
CN101879657B (zh) * 2009-05-08 2016-06-29 东莞市中镓半导体科技有限公司 固体激光剥离设备和剥离方法
US8921876B2 (en) 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
JP5349260B2 (ja) * 2009-11-19 2013-11-20 株式会社東芝 半導体発光装置及びその製造方法
TWI412487B (zh) * 2009-12-31 2013-10-21 Huang Chung Cheng 奈米線結構的製造方法
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
TWI442455B (zh) * 2010-03-29 2014-06-21 Soitec Silicon On Insulator Iii-v族半導體結構及其形成方法
FR2961719B1 (fr) * 2010-06-24 2013-09-27 Soitec Silicon On Insulator Procede de traitement d'une piece en un materiau compose
WO2012046478A1 (ja) * 2010-10-06 2012-04-12 ウシオ電機株式会社 レーザリフトオフ方法及びレーザリフトオフ装置
JP2011159980A (ja) * 2011-02-10 2011-08-18 Furukawa Co Ltd レーザ剥離装置、レーザ剥離方法、ｉｉｉ族窒化物半導体自立基板の製造方法
JP2011151400A (ja) * 2011-02-10 2011-08-04 Furukawa Co Ltd レーザ剥離装置、レーザ剥離方法、ｉｉｉ族窒化物半導体自立基板の製造方法
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
US8841207B2 (en) 2011-04-08 2014-09-23 Lux Material Co., Ltd. Reusable substrates for electronic device fabrication and methods thereof
WO2012164006A1 (en) * 2011-05-31 2012-12-06 Kewar Holdings S.A. Method and apparatus for fabricating free-standing group iii nitride crystals
WO2012164005A1 (en) * 2011-05-31 2012-12-06 Kewar Holdings S.A. Method and apparatus for fabricating free-standing group iii nitride crystals
WO2012177900A1 (en) 2011-06-22 2012-12-27 Research Triangle Institute, International Bipolar microelectronic device
CN103748662B (zh) * 2011-06-28 2016-11-09 圣戈班晶体及检测公司 半导体衬底及形成方法
KR20140082738A (ko) * 2011-09-29 2014-07-02 니트라이드 솔루션즈 인크. 무기 물질, 이를 제조하기 위한 방법 및 장치, 및 이의 용도
KR20130081956A (ko) * 2012-01-10 2013-07-18 삼성전자주식회사 질화물 반도체층 성장 방법
KR102192130B1 (ko) 2012-03-21 2020-12-17 프라이베르게르 컴파운드 마터리얼스 게엠베하 Iii-n 단결정
JP6024533B2 (ja) 2012-03-28 2016-11-16 日亜化学工業株式会社 サファイア基板及びその製造方法並びに窒化物半導体発光素子
JP6144525B2 (ja) * 2013-04-05 2017-06-07 古河機械金属株式会社 下地基板の製造方法およびｉｉｉ族窒化物半導体基板の製造方法
US9831363B2 (en) * 2014-06-19 2017-11-28 John Farah Laser epitaxial lift-off of high efficiency solar cell
FR3009644B1 (fr) 2013-08-08 2016-12-23 Soitec Silicon On Insulator Procede, empilement et ensemble de separation d'une structure d'un substrat par irradiations electromagnetiques
CN107305947B (zh) * 2016-04-25 2022-01-04 松下知识产权经营株式会社 电池和电池系统
EP3655989A1 (en) * 2017-07-20 2020-05-27 Swegan AB A heterostructure for a high electron mobility transistor and a method of producing the same
CN109307613B (zh) * 2018-10-18 2021-07-02 中国石油天然气股份有限公司 一种制备人造岩心的方法及装置
KR102001791B1 (ko) * 2018-12-26 2019-07-18 한양대학교 산학협력단 이온 주입을 이용한 질화갈륨 기판 제조 방법
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
EP4090790A1 (en) * 2020-01-16 2022-11-23 SLT Technologies, Inc. High-quality group-iii metal nitride seed crystal and method of making
KR20220006880A (ko) * 2020-07-09 2022-01-18 주식회사루미지엔테크 단결정 기판의 제조 방법
CN112975117B (zh) * 2020-08-27 2022-09-13 重庆康佳光电技术研究院有限公司 一种激光剥离方法及装置
CN112382735B (zh) * 2020-11-17 2021-11-12 东莞赣锋电子有限公司 一种激光清洗制备锂离子电池极片的方法

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3326820A (en) 1965-04-22 1967-06-20 Ibm Arc process for forming high melting point compounds
NL6615059A (enExample) 1966-10-25 1968-04-26
US3598526A (en) 1967-04-27 1971-08-10 Dow Chemical Co Method for preparing monocrystalline aluminum nitride
US3829556A (en) 1972-03-24 1974-08-13 Bell Telephone Labor Inc Growth of gallium nitride crystals
US3922703A (en) 1974-04-03 1975-11-25 Rca Corp Electroluminescent semiconductor device
JPS5659700A (en) 1979-10-17 1981-05-23 Matsushita Electric Ind Co Ltd Forming method for gallium nitride single crystal thin film
DE3176676D1 (en) 1980-04-10 1988-04-07 Massachusetts Inst Technology Methods of producing sheets of crystalline material and devices amde therefrom
US4622083A (en) 1985-03-11 1986-11-11 Texas Instruments Incorporated Molecular beam epitaxial process
US5373171A (en) 1987-03-12 1994-12-13 Sumitomo Electric Industries, Ltd. Thin film single crystal substrate
US4931132A (en) 1988-10-07 1990-06-05 Bell Communications Research, Inc. Optical control of deposition of crystal monolayers
US5006914A (en) 1988-12-02 1991-04-09 Advanced Technology Materials, Inc. Single crystal semiconductor substrate articles and semiconductor devices comprising same
US4985742A (en) 1989-07-07 1991-01-15 University Of Colorado Foundation, Inc. High temperature semiconductor devices having at least one gallium nitride layer
US5334277A (en) 1990-10-25 1994-08-02 Nichia Kagaky Kogyo K.K. Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same
US5433169A (en) 1990-10-25 1995-07-18 Nichia Chemical Industries, Ltd. Method of depositing a gallium nitride-based III-V group compound semiconductor crystal layer
US5146465A (en) 1991-02-01 1992-09-08 Apa Optics, Inc. Aluminum gallium nitride laser
WO1992016966A1 (en) 1991-03-18 1992-10-01 Boston University A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films
DE69221806T2 (de) * 1991-10-10 1998-03-26 Coherent Inc Vorrichtung zum Abgeben eines defokussierten Laserstrahls mit scharfkantigem Querschnitt
JP3352712B2 (ja) 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
JPH07267796A (ja) * 1994-03-31 1995-10-17 Mitsubishi Cable Ind Ltd ＧａＮ単結晶の製造方法
US5846844A (en) 1993-11-29 1998-12-08 Toyoda Gosei Co., Ltd. Method for producing group III nitride compound semiconductor substrates using ZnO release layers
JPH07202265A (ja) * 1993-12-27 1995-08-04 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体の製造方法
US6958093B2 (en) * 1994-01-27 2005-10-25 Cree, Inc. Free-standing (Al, Ga, In)N and parting method for forming same
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6440823B1 (en) * 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
US5954874A (en) 1996-10-17 1999-09-21 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride from a melt
US6146457A (en) * 1997-07-03 2000-11-14 Cbl Technologies, Inc. Thermal mismatch compensation to produce free standing substrates by epitaxial deposition
US6071795A (en) 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
US6331208B1 (en) * 1998-05-15 2001-12-18 Canon Kabushiki Kaisha Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor
TW417315B (en) * 1998-06-18 2001-01-01 Sumitomo Electric Industries GaN single crystal substrate and its manufacture method of the same
JP3525061B2 (ja) * 1998-09-25 2004-05-10 株式会社東芝 半導体発光素子の製造方法
US6280523B1 (en) * 1999-02-05 2001-08-28 Lumileds Lighting, U.S., Llc Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting
JP2000228539A (ja) * 1999-02-08 2000-08-15 Sharp Corp 窒素化合物半導体の製造方法
US6176925B1 (en) * 1999-05-07 2001-01-23 Cbl Technologies, Inc. Detached and inverted epitaxial regrowth & methods
KR20010029199A (ko) * 1999-09-30 2001-04-06 홍세경 질화물 단결정 기판 제조 장치 및 방법
JP3518455B2 (ja) * 1999-12-15 2004-04-12 日亜化学工業株式会社 窒化物半導体基板の作製方法
US6380108B1 (en) * 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
JP3568112B2 (ja) * 1999-12-27 2004-09-22 豊田合成株式会社 半導体基板の製造方法
KR20010058673A (ko) * 1999-12-30 2001-07-06 이형도 하이드라이드 기상 에피택시 성장법에 의한 크랙없는갈륨나이트라이드 후막 제조 방법
US6596079B1 (en) * 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
US6447604B1 (en) * 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
US6652648B2 (en) * 2000-04-27 2003-11-25 Samsung Corning Co., Ltd. Method for fabricating GaN single crystal substrate
JP3803606B2 (ja) * 2001-04-13 2006-08-02 松下電器産業株式会社 Ｉｉｉ族窒化物半導体基板の製造方法

Similar Documents

Publication Publication Date Title
JP2008273825A5 (enExample)
JP2005502193A5 (enExample)
JP4401168B2 (ja) 独立（Ａｌ、Ｇａ、Ｉｎ）Ｎ物品を形成する方法
JP4288792B2 (ja) 単結晶製造方法及び単結晶製造装置
EP2455515B1 (en) Process for producing sic single crystal
EP2657378A1 (en) METHOD AND DEVICE FOR MANUFACTURING SELF-SUPPORTING GALLIUM NITRIDE (GaN) SUBSTRATE
KR100331447B1 (ko) ＧａＮ 후막 제조 방법
JP5339239B2 (ja) ＳｉＣ基板の作製方法
JP4054197B2 (ja) 炭化珪素単結晶育成用種結晶及びその製造方法並びに炭化珪素単結晶インゴットの製造方法
KR100450781B1 (ko) Gan단결정제조방법
JP4772271B2 (ja) 正極性にドープされた広い禁止帯を有する酸化亜鉛（ＺｎＯ）半導体の製法
JP2015209355A (ja) 結晶成長装置
JPH02208925A (ja) 半導体膜の形成方法
CN105002561B (zh) 在(100)GaAs衬底上制备ZnTe外延厚膜的方法
JP3260568B2 (ja) 化合物半導体製造用るつぼ
KR100732858B1 (ko) 다결정질 박막의 현장 성장방법
EP2484804B1 (en) Catalytic cvd device, method for formation of film, process for production of solar cell, and substrate holder
JPH0259489A (ja) 化合物半導体単結晶の製造方法
JPH0645257A (ja) 半導体薄膜形成方法
JP2013040058A (ja) 自己組織化方法及びそれを使用したエピタキシャル成長方法
JPH0491428A (ja) 化学気相成長装置および該装置による半導体成長方法
KR101267424B1 (ko) 기판 표면처리 공정을 이용한 자립형 실리콘 필름의 제조방법
KR101169018B1 (ko) 단결정 실리콘 박막 및 이의 제조 방법
JP2013016562A (ja) 気相成長方法
JP7135718B2 (ja) 基板保持機構、成膜装置および多結晶膜の成膜方法