JP2008199067A - 半導体装置 - Google Patents
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- JP2008199067A JP2008199067A JP2008131097A JP2008131097A JP2008199067A JP 2008199067 A JP2008199067 A JP 2008199067A JP 2008131097 A JP2008131097 A JP 2008131097A JP 2008131097 A JP2008131097 A JP 2008131097A JP 2008199067 A JP2008199067 A JP 2008199067A
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Abstract
【解決手段】放熱性を有する支持板(5)上に順次積層されて固着された第1の半導体素子(1)及び第2の半導体素子(2)を有する第1の半導体素子積層体(7)と、支持板(5)上に順次積層されて固着された第3の半導体素子(3)及び第4の半導体素子(4)を有する第2の半導体素子積層体(8)と、第1〜第4の半導体素子(1〜4)を制御する制御回路(13)とを備え、第1の半導体素子積層体(7)と第2の半導体素子積層体(8)との間に制御回路(13)を配置する。支持板(5)の占有面積を減少しつつ集積度を向上することができると共に、半導体装置の発生熱量を抑制することができる。
【選択図】図1
Description
H型ブリッジ回路(10)を作動する際に、第1のトランジスタ(1)及び第4のトランジスタ(4)と、第2のトランジスタ(2)及び第3のトランジスタ(3)とを交互にオン・オフ動作させて、スイッチング作動させることにより、接続点(A1)と(A2)との間に交互に逆方向の電流を流して、負荷(6)を作動させることができる。このように、第1のトランジスタ(1)から第4のトランジスタ(4)までのスイッチング動作を行ない、直流電圧源を使用し、接続点(A1)と(A2)との間に接続された冷陰極蛍光放電管等を点灯させることができる。
そこで、本発明の目的は、複数の半導体素子を小さい面積に積層し且つ良好な放熱特性で作動できる半導体装置を提供することにある。
本発明の第1の実施の形態による半導体装置は、放熱性を有する支持板(5)と、支持板(5)上に順次積層されて固着され且つ交互にスイッチング動作される第1の半導体素子(1)及び第2の半導体素子(2)とを備えている。第1の半導体素子(1)と第2の半導体素子(2)とを交互にスイッチング動作させるので、一方がオンのとき他方がオフとなり、第1の半導体素子(1)と第2の半導体素子(2)の発生熱量を抑制することができる。
<1> ハイサイド側の第1のトランジスタ(1)と第3のトランジスタ(3)との上に、ローサイド側の第2のトランジスタ(2)と第4のトランジスタ(4)が固着されて第1及び第2の半導体素子積層体(7,8)が構成され、第1の半導体素子積層体(7)と第2の半導体素子積層体(8)の間に設けられる制御回路(13)とが単一の支持板(5)上に固着される。
<2> 第1のトランジスタ(1)と第2のトランジスタ(2)との間及び第3のトランジスタ(3)及び第4のトランジスタ(4)との間に金属製の第1及び第2の放熱層(11,12)が固着される。
<3> 第1のトランジスタ(1)及び第4のトランジスタ(4)と、第2のトランジスタ(2)及び第3のトランジスタ(3)とが交互にスイッチング動作される。
<4> 第1のトランジスタ(1)と第2のトランジスタ(2)との間及び第3のトランジスタ(3)と第4のトランジスタ(4)との間は、金属製の第1及び第2の放熱層(11,12)を介して電気的に接続される。
[1] 第1のトランジスタ(1)の上に第2のトランジスタ(2)を固着し又は第3のトランジスタ(3)の上に第4のトランジスタ(4)を固着することにより、支持板(5)の占有面積を減少しつつ集積度を向上することができると共に、第1のトランジスタ(1)と第2のトランジスタ(2)又は第3のトランジスタ(3)と第4のトランジスタ(4)とを交互にスイッチング動作させるので、第1のトランジスタ(1)から第4のトランジスタ(4)までの各々から発生する熱を十分に放出して、第1の半導体素子積層体(7)又は第2の半導体素子積層体(8)の過度の温度上昇を防止することができる。
[2] 第1のトランジスタ(1)及び第4のトランジスタ(4)並びに第2のトランジスタ(2)及び第3のトランジスタ(3)のスイッチング素子(6)を交互にスイッチング動作させることにより、直流電源に接続されたH型ブリッジ回路(10)の負荷(6)を交流電流で駆動することができる。
[3] 大電流が流れる第1のトランジスタ(1)及び第2のトランジスタ(2)から多量の発熱が生じても、第1のトランジスタ(1)と第2のトランジスタ(2)との間に固着された第1の放熱層(11)を通じて十分な量の熱を放出できるので、第1のトランジスタ(1)と第2のトランジスタ(2)の電気的特性は劣化しない。
[4] 単一の支持板(5)上に第1のパワー半導体素子積層体(7)と第2のパワー半導体素子積層体(8)とを固着しても、第1のトランジスタ(1)と第2のトランジスタ(2)との間に固着される第1の放熱層(11)及び第3のトランジスタ(3)と第4のトランジスタ(4)との間に固着される第2の放熱層(12)を通じて十分な量の熱を放出できるので、第1のトランジスタ(1)から第4のトランジスタ(4)までの電気的特性は劣化しない。
[5] 第1のトランジスタ(1)と第2のトランジスタ(2)及び第3のトランジスタ(3)と第4のトランジスタ(4)とを第1及び第2の放熱層(11,12)を介して電気的に互いに接続するので、別途ワイヤボンディング等を行なう必要がなく、第1のパワー半導体素子積層体(7)と第2のパワー半導体素子積層体(8)とに流れる電流の結線経路を短縮して、ワイヤ結線等を簡素化し、電流の結線経路の延長によるノイズ発生及び電力損失を抑制することができる。
Claims (4)
- 放熱性を有する支持板と、該支持板上に順次積層されて固着された第1の半導体素子及び第2の半導体素子を有する第1の半導体素子積層体と、前記支持板上に順次積層されて固着された第3の半導体素子及び第4の半導体素子を有する第2の半導体素子積層体と、前記第1の半導体素子、第2の半導体素子、第3の半導体素子及び第4の半導体素子を制御する制御回路とを備え、
前記第1の半導体素子積層体と前記第2の半導体素子積層体との間に前記制御回路を配置したことを特徴とする半導体装置。 - 前記第1の半導体素子と前記第3の半導体素子との間は、前記第1の半導体素子の大きさ以上に離間する請求項1に記載の半導体装置。
- 前記第1の半導体素子積層体は、前記支持板の一方の側面側に配置され、
前記第2の半導体素子積層体は、前記支持板の他方の側面側に配置される請求項1又は2に記載の半導体装置。 - 前記支持板上に固着した前記制御回路により、前記第1の半導体素子、第2の半導体素子、第3の半導体素子及び第4の半導体素子のスイッチング動作を制御する請求項1〜3の何れか1項に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2008131097A JP4853493B2 (ja) | 2003-08-18 | 2008-05-19 | 半導体装置 |
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JP2003294208 | 2003-08-18 | ||
JP2003294208 | 2003-08-18 | ||
JP2008131097A JP4853493B2 (ja) | 2003-08-18 | 2008-05-19 | 半導体装置 |
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JP2005513139A Division JPWO2005018001A1 (ja) | 2003-08-18 | 2004-05-27 | 半導体装置 |
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JP2008199067A true JP2008199067A (ja) | 2008-08-28 |
JP4853493B2 JP4853493B2 (ja) | 2012-01-11 |
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JP2005513139A Pending JPWO2005018001A1 (ja) | 2003-08-18 | 2004-05-27 | 半導体装置 |
JP2008131097A Expired - Lifetime JP4853493B2 (ja) | 2003-08-18 | 2008-05-19 | 半導体装置 |
JP2008131096A Expired - Lifetime JP4844591B2 (ja) | 2003-08-18 | 2008-05-19 | 半導体装置 |
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JP2005513139A Pending JPWO2005018001A1 (ja) | 2003-08-18 | 2004-05-27 | 半導体装置 |
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JP2008131096A Expired - Lifetime JP4844591B2 (ja) | 2003-08-18 | 2008-05-19 | 半導体装置 |
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US (1) | US7608918B2 (ja) |
EP (1) | EP1657750B1 (ja) |
JP (3) | JPWO2005018001A1 (ja) |
CN (1) | CN100546028C (ja) |
WO (1) | WO2005018001A1 (ja) |
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JP2007019215A (ja) * | 2005-07-07 | 2007-01-25 | Sanken Electric Co Ltd | 半導体装置及びその製法 |
JP2007027432A (ja) * | 2005-07-15 | 2007-02-01 | Sanken Electric Co Ltd | 半導体装置 |
JP5481104B2 (ja) | 2009-06-11 | 2014-04-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
DE102013008193A1 (de) | 2013-05-14 | 2014-11-20 | Audi Ag | Vorrichtung und elektrische Baugruppe zum Wandeln einer Gleichspannung in eine Wechselspannung |
CN103824832B (zh) * | 2014-03-13 | 2016-08-24 | 杭州明果教育咨询有限公司 | 一种多mosfet集成六桥臂封装模块 |
WO2016094718A1 (en) * | 2014-12-10 | 2016-06-16 | Texas Instruments Incorporated | Power field-effect transistor (fet), pre-driver, controller, and sense resistor integration |
US10204847B2 (en) | 2016-10-06 | 2019-02-12 | Infineon Technologies Americas Corp. | Multi-phase common contact package |
JP6770452B2 (ja) * | 2017-01-27 | 2020-10-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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JP2005519578A (ja) * | 2002-03-04 | 2005-06-30 | インターナショナル レクティフィアー コーポレイション | 単一リードフレームを含むhブリッジ |
JP2005519576A (ja) * | 2002-03-04 | 2005-06-30 | インターナショナル レクティフィアー コーポレイション | 単一リードフレームのhブリッジ |
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US5371654A (en) * | 1992-10-19 | 1994-12-06 | International Business Machines Corporation | Three dimensional high performance interconnection package |
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JP4014652B2 (ja) * | 1997-07-19 | 2007-11-28 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体デバイスアセンブリ及び回路 |
JP2000164800A (ja) * | 1998-11-30 | 2000-06-16 | Mitsubishi Electric Corp | 半導体モジュール |
US6259615B1 (en) * | 1999-07-22 | 2001-07-10 | O2 Micro International Limited | High-efficiency adaptive DC/AC converter |
JP2001043985A (ja) * | 1999-07-30 | 2001-02-16 | Denso Corp | 放電灯装置 |
JP2002026251A (ja) * | 2000-07-11 | 2002-01-25 | Toshiba Corp | 半導体装置 |
DE10102750B4 (de) * | 2001-01-22 | 2006-04-20 | Siemens Ag | Schaltungsanordnung |
EP1475836B1 (en) * | 2003-05-08 | 2006-05-03 | Infineon Technologies AG | Circuit module having interleaved groups of circuit chips |
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JPH09213877A (ja) * | 1996-02-02 | 1997-08-15 | Toshiba Corp | マルチチップモジュール半導体装置 |
JP2005519578A (ja) * | 2002-03-04 | 2005-06-30 | インターナショナル レクティフィアー コーポレイション | 単一リードフレームを含むhブリッジ |
JP2005519576A (ja) * | 2002-03-04 | 2005-06-30 | インターナショナル レクティフィアー コーポレイション | 単一リードフレームのhブリッジ |
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Publication number | Publication date |
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CN100546028C (zh) | 2009-09-30 |
JP4853493B2 (ja) | 2012-01-11 |
JPWO2005018001A1 (ja) | 2007-10-04 |
EP1657750A4 (en) | 2009-09-02 |
WO2005018001A1 (ja) | 2005-02-24 |
JP2008199066A (ja) | 2008-08-28 |
US7608918B2 (en) | 2009-10-27 |
EP1657750A1 (en) | 2006-05-17 |
EP1657750B1 (en) | 2018-12-05 |
CN1795557A (zh) | 2006-06-28 |
JP4844591B2 (ja) | 2011-12-28 |
US20060202228A1 (en) | 2006-09-14 |
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