CN100546028C - 半导体装置 - Google Patents
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Abstract
在半导体装置中设置具有散热性的支撑板(5)以及在支撑板(5)上依次被层叠、固定且交替地进行开关工作的第1半导体元件(1)和第2半导体元件(2)。如果在支撑板(5)上依次层叠、固定第1半导体元件(1)和第2半导体元件(2),则既可减少支撑板(5)的占有面积,又可提高集成度,使第1半导体元件(1)和第2半导体元件(2)交替地进行开关工作,可抑制第1半导体元件(1)和第2半导体元件(2)的发生热量。在小的面积上层叠半导体装置的多个半导体元件,可使半导体装置以良好的散热特性工作。
Description
技术领域
本发明涉及半导体装置,详细地说,涉及在单一的支撑板上安装多个功率半导体元件并能以小型化的方式来制造的半导体装置。
背景技术
在用单一的半导体装置构成图3中示出的H型桥式电路10的情况下,H型桥式电路10具备高压侧的第1晶体管1和第3晶体管3以及低压侧的第2晶体管2和第4晶体管4。在第1晶体管1的发射极与第2晶体管2的集电极的连接点A1与第3晶体管3的发射极与第4晶体管4的集电极的连接点A2之间连接利用交流电流进行驱动的例如作为冷阴极荧光放电管的负载6。
在使H型桥式电路10工作时,使第1晶体管1和第4晶体管4以及第2晶体管2和第3晶体管3交替地进行导通、关断工作,通过使其进行开关工作,在连接点A1与A2之间交替地流过反方向的电流,可使负载6工作。这样来进行第1晶体管1至第4晶体管4的开关工作,使用直流电压源可使在连接点A1与A2之间被连接的冷阴极荧光放电管等点亮。
专利文献1:特开昭55-111151号公报
在将图3中示出的H型桥式电路10构筑为单一的半导体装置时,由于安装4个第1晶体管1至第4晶体管4及其控制用IC的支撑板(未图示)的平面面积变大,故存在半导体装置的尺寸增大的缺点。因此,应用例如在专利文献1中被公开的2个半导体元件的层叠技术可缩小半导体装置的平面面积。专利文献1示出经非导电性粘接剂层叠了2个半导体元件的电子部件。但是,在层叠功率半导体元件的H型桥式电路中,如果只是层叠半导体元件,则在工作时半导体元件的发热集中,不能得到良好的散热特性,存在半导体元件的电特性恶化的危险。
因此,本发明的目的在于提供在小的面积上层叠多个半导体元件且能以良好的散热特性工作的半导体装置。
发明内容
本发明的第一方面的半导体装置具备具有散热性的支撑板5以及在支撑板5上依次被层叠、固定且交替地进行开关工作的第1半导体元件1和第2半导体元件2。如果在支撑板5上依次层叠、固定第1半导体元件1和第2半导体元件2,则既可减少支撑板5的占有面积,又可提高集成度。此外,由于使第1半导体元件1和第2半导体元件2交替地进行开关工作,故一方在导通时,另一方为关断,可抑制第1半导体元件1和第2半导体元件2的发生热量。
本发明的第二方面的半导体装置具备:具有散热性的支撑板5;第1半导体元件层叠体7,具有在支撑板5上依次被层叠、固定的第1半导体元件1和第2半导体元件2;以及第2半导体元件层叠体8,具有在支撑板5上依次被层叠、固定的第3半导体元件3和第4半导体元件4,第1半导体元件层叠体7的第1半导体元件1和第2半导体元件2以及第2半导体元件层叠体8的第3半导体元件3和第4半导体元件4构成H型桥式电路10。第1半导体元件1至第4半导体元件4分别具有开关元件,第1半导体元件1和第4半导体元件4以及第2半导体元件2和第3半导体元件3交替地进行开关工作。通过使第1半导体元件1和第4半导体元件4以及第2半导体元件2和第3半导体元件3交替地进行开关工作,能以交流电流驱动连接到直流电源上的H型桥式电路10的负载6。
本发明的第三方面的半导体装置具备具有散热性的支撑板5以及由在支撑板5上依次被层叠、固定的功率半导体元件分别构成的第1半导体元件1和第2半导体元件2。第1半导体元件1和第2半导体元件2分别具有开关元件。在第1半导体元件1与第2半导体元件2之间固定了散热层11,经散热层11互相电连接第1半导体元件1与第2半导体元件2。由于即使从流过大电流的第1半导体元件1和第2半导体元件2发生较多的热量,也可通过在第1半导体元件1与第2半导体元件2之间被固定了散热层11放出充分的量的热,故第1半导体元件1和第2半导体元件2的电特性不会恶化。
本发明的第四方面的半导体装置具备:具有散热性的支撑板5;第1功率半导体元件层叠体7,具有由在支撑板5上依次被层叠、固定的功率半导体元件分别构成的第1半导体元件1和第2半导体元件2;以及第2功率半导体元件层叠体8,具有由在支撑板5上依次被层叠、固定的功率半导体元件分别构成的第3半导体元件3和第4半导体元件4。第1半导体元件1、第2半导体元件2、第3半导体元件3和第4半导体元件4分别具有开关元件。在第1半导体元件1与第2半导体元件2之间固定第1散热层11,在第3半导体元件3与第4半导体元件4之间固定第2散热层12。经第1散热层11互相电连接第1半导体元件1与第2半导体元件2,经第2散热层12互相电连接第3半导体元件3与第4半导体元件4。即使在单一的支撑板5上固定第1功率半导体元件层叠体7和第2功率半导体元件层叠体8,由于能通过在第1半导体元件1与第2半导体元件2之间以及第3半导体元件3与第4半导体元件4之间被固定的第1和第2散热层11、12放出充分的量的热,故第1半导体元件1至第4半导体元件4的电特性不会恶化。再者,由于经第1和第2散热层11、12互相电连接第1半导体元件1与第2半导体元件2以及第3半导体元件3与第4半导体元件4,故缩短流过第1功率半导体元件层叠体7和第2功率半导体元件层叠体8的电流的连线路径,可抑制因电流的连线路径的延长导致的噪声发生和功率损耗。
在本发明的半导体装置中,可得到下述的半导体装置:即使在多个半导体元件中流过大的电流,也不发生过度的发热,抑制了电特性的恶化,延长了寿命,具有良好的可靠性。
附图说明
图1是示出利用树脂封装体覆盖前的状态的本发明的半导体装置的侧面图。
图2是示出利用树脂封装体覆盖的状态的本发明的半导体装置的平面图。
图3是示出以前的H型桥式电路的电路图。
具体实施方式
以下,利用图1和图2,说明构成图3中示出的H型桥式电路的本发明的半导体装置的实施形态。在图1和图2中,对与图3中示出的部分为同一部位附以同一符号。
本发明的第一方面的半导体装置具备:具有散热性的铜或铝等的金属制的支撑板5;在支撑板5上被固定的第1半导体元件层叠体(第1功率半导体元件层叠体)7;在支撑板5上被固定的第2半导体元件层叠体(第2功率半导体元件层叠体)8;以及在第1半导体元件层叠体7与第2半导体元件层叠体8之间由在支撑板5上被固定的半导体集成电路构成的控制电路13。第1半导体元件层叠体7具有在支撑板5上依次被层叠、固定的第1晶体管(第1半导体元件,第1功率半导体元件或第1开关元件)1和第2晶体管(第2半导体元件,第2功率半导体元件或第2开关元件)2,第2半导体元件层叠体8具有在支撑板5上依次被层叠、固定的第3晶体管(第3半导体元件,第3功率半导体元件或第3开关元件)3和第4晶体管(第4半导体元件,第4功率半导体元件或第4开关元件)4。第1晶体管1至第4晶体管4是构成图3中示出的H型桥式电路10的4个功率晶体管的例如绝缘栅型双极型晶体管(IGBT)。
虽然未图示,但第1晶体管1至第4晶体管4具有半导体衬底、在半导体衬底的上面被电连接的基极和发射极以及在半导体衬底的下面被电连接的集电极。利用在发射极与基极之间设置的层间绝缘膜9电分离发射极与基极。第1晶体管1的集电极经焊料(焊锡)14被固定在支撑板5上,第1晶体管1的发射极经焊料(焊锡)15被固定在第1散热层11上。第2晶体管2的集电极经焊料16被固定在第1散热层11上,第2晶体管2的发射极被配置在最上部。同样,第3晶体管3的集电极经焊料(焊锡)17被固定在支撑板5上,第3晶体管3的发射极经焊料(焊锡)18被固定在第2散热层12上。第4晶体管4的集电极经焊料19被固定在第2散热层12上,第4晶体管4的发射极被配置在最上部。在图示的实施形态中,第1和第2散热层11、12使用由铜或铝等的金属形成的散热板,也称为主要使从第2晶体管2和第4晶体管4发生的热放出到外部的散热器。也可利用厚度较薄的焊锡层形成散热层11、12来代替利用散热板来形成。如图2中所示,将第1晶体管1至第4晶体管4的各发射极、集电极和基极连接成图3中示出的电路结构,同时连接与第1半导体元件层叠体7、第2半导体元件层叠体8和控制电路13的电极连接的多条外部引线20,利用树脂封装体21覆盖半导体装置整体,但将外部引线20从树脂封装体21导出到外部。
在工作时,将支撑板5连接到未图示的直流电源的正侧端子上,将第2晶体管2和第4晶体管4的各发射极连接到直流电源的负侧端子上。将第1晶体管1至第4晶体管4的各基极连接到由半导体集成电路构成的控制电路13上,从控制电路13接受控制信号。在第1晶体管1和第4晶体管4导通时,第2晶体管2和第3晶体管3成为关断状态,在负载6中流过一个方向的电流I1,其后,在第1晶体管1和第4晶体管4被转换为关断状态,第2晶体管2和第3晶体管3被转换为导通状态时,在负载6中流过另一方向的电流I2,利用交流电流使负载6工作。
本实施形态的半导体装置在下述的方面与以前的半导体装置不同。
<1>在高压侧的第1晶体管1和第3晶体管3上固定低压侧的第2晶体管2和第4晶体管4,构成第1和第2半导体元件层叠体7、8,在单一的支撑板5上固定在第1半导体元件层叠体7与第2半导体元件层叠体8之间设置的控制电路13。
<2>在第1晶体管1与第2晶体管2之间以及第3晶体管3与第4晶体管4之间固定金属制的第1和第2散热层11、12。
<3>第1晶体管1和第4晶体管4以及第2晶体管2和第3晶体管3交替地进行开关工作。
<4>在第1晶体管1与第2晶体管2之间以及第3晶体管3与第4晶体管4之间经金属制的第1和第2散热层11、12被电连接。
本实施形态的半导体装置具有下述的作用和效果。
[1]由于通过在第1晶体管1上固定第2晶体管2或在第3晶体管3上固定第4晶体管4,既可减少支撑板5的占有面积,又可提高集成度,同时使第1晶体管1和第2晶体管2或第3晶体管3和第4晶体管4交替地进行开关工作,可充分地放出从第1晶体管1至第4晶体管4分别发生的热,可防止第1半导体元件层叠体7或第2半导体元件层叠体8的过度的温度上升。
[2]通过使第1晶体管1和第4晶体管4以及第2晶体管2和第3晶体管3交替地进行开关工作,能以交流电流驱动连接到直流电源上的H型桥式电路10的负载6。
[3]由于即使从流过大电流的第1晶体管1和第2晶体管2发生较多的热量,也可通过在第1晶体管1与第2晶体管2之间被固定的第1散热层11放出充分的量的热,故第1晶体管1和第2晶体管2的电特性不会恶化。
[4]即使在单一的支撑板5上固定第1功率半导体元件层叠体7和第2功率半导体元件层叠体8,也能通过在第1晶体管1与第2晶体管2之间被固定的第1散热层11以及在第3晶体管3与第4晶体管4之间被固定的第2散热层12放出充分的量的热,故第1晶体管1至第4晶体管4的电特性不会恶化。
[5]经第1和第2散热层11、12互相电连接第1晶体管1与第2晶体管2以及第3晶体管3与第4晶体管4,故没有必要另外进行引线键合等,缩短了流过第1功率半导体元件层叠体7和第2功率半导体元件层叠体8的电流的连线路径,简化引线连线,可抑制因电流的连线路径的延长导致的噪声发生和功率损耗。
本发明的上述实施形态可变更。例如,可使用MOSFET或一般的双极型晶体管来代替绝缘栅型双极型晶体管。此外,在此虽将第1半导体元件1至第4半导体元件4作为晶体管来示出,但也可以是包含晶体管等的开关元件与其它的半导体元件的复合元件。
产业上利用的可能性
可应用于在冷阴极荧光放电管等的驱动装置中使用的半导体装置。
Claims (9)
1.一种半导体装置,其特征在于,具备:
具有散热性的支撑板(5);
固定在上述支撑板(5)上、且具有集电极或漏极、发射极或源极、和基极或栅极的第1开关元件(1);
固定在上述第1开关元件(1)上、且具有集电极或漏极、发射极或源极、和基极或栅极的第2开关元件(2);以及
控制电路(13),
其中,上述第1开关元件(1)的集电极或漏极与上述支撑板(5)电连接;
上述第1开关元件(1)的发射极或源极与上述第2开关元件(2)的集电极或漏极电连接;
上述控制电路(13)对上述第1开关元件(1)的基极或栅极和上述第2开关元件(2)的基极或栅极施加控制信号,使上述第1开关元件(1)和上述第2开关元件(2)交替开关动作;当上述第1开关元件(1)和上述第2开关元件(2)中的一方导通时,上述第1开关元件(1)和上述第2开关元件(2)中的另一方关断。
2.如权利要求1中所述的半导体装置,其特征在于:
在上述第1开关元件(1)与上述第2开关元件(2)之间配置有散热层(11),
上述第1开关元件(1)的发射极或源极与上述第2开关元件(2)的集电极或漏极经由上述散热层电连接。
3.一种半导体装置,其特征在于:
具备:
具有散热性的支撑板(5);
固定在上述支撑板(5)上的第1半导体元件层叠体(7);
固定在上述支撑板(5)上的第2半导体元件层叠体(8);以及
控制电路(13),
其中,上述第1半导体元件层叠体(7)具有固定在该支撑板(5)上且具有集电极或漏极、发射极或源极、和基极或栅极的第1开关元件(1)和固定在该第1开关元件(1)上且具有集电极或漏极、发射极或源极、和基极或栅极的第2开关元件(2);
上述第2半导体元件层叠体(8)具有固定在上述支撑板(5)上且具有集电极或漏极、发射极或源极、和基极或栅极的第3开关元件(3)和固定在第3开关元件上且具有集电极或漏极、发射极或源极、和基极或栅极的第4开关元件(4),
上述第1开关元件(1)的集电极或漏极与上述支撑板(5)电连接;
上述第1开关元件(1)的发射极或源极与上述第2开关元件(2)的集电极或漏极电连接;
上述第3开关元件(3)的集电极或漏极与上述支撑板(5)电连接;
上述第3开关元件(1)的发射极或源极与上述第4开关元件(4)的集电极或漏极电连接;
上述控制电路(13)对上述第1开关元件(1)、上述第2开关元件(2)、上述第3开关元件(3)、以及上述第4开关元件(4)各自的基极或栅极施加控制信号,使上述第1开关元件(1)与上述第4开关元件(4)同时开关动作,并使上述第2开关元件(2)与上述第3开关元件(3)同时开关动作;并且,使上述第1开关元件(1)和上述第4开关元件(4)与上述第2开关元件(2)和上述第3开关元件(3)交替开关动作,当上述第1开关元件(1)和上述第4开关元件(4)与上述第2开关元件(2)和上述第3开关元件(3)中的一方导通时,上述第1开关元件(1)和上述第4开关元件(4)与上述第2开关元件(2)和上述第3开关元件(3)中的另一方关断。
4.如权利要求3中所述的半导体装置,其特征在于:
在上述第1开关元件(1)与上述第2开关元件(2)之间配置有第1散热层(11),
上述第1开关元件(1)的发射极或源极与上述第2开关元件(2)的集电极或漏极经由上述第1散热层(11)电连接;
在上述第3开关元件(3)与上述第4开关元件(4)之间配置有第2散热层(12),
上述第3开关元件(3)的发射极或源极与上述第4开关元件(4)的集电极或漏极经由上述第2散热层(12)电连接。
5.如权利要求3中所述的半导体装置,其特征在于:
在上述第1半导体元件层叠体(7)与上述第2半导体元件层叠体(8)之间,上述控制电路(13)固定在上述支撑板(5)上。
6.如权利要求3中所述的半导体装置,其特征在于:
上述第1开关元件(1)的宽度大于上述第2开关元件(2)的宽度,
上述第3开关元件(3)的宽度大于上述第4开关元件(4)的宽度。
7.如权利要求3中所述的半导体装置,其特征在于:
上述第1开关元件(1)的集电极或漏极通过焊料(14)与金属制的上述支撑板(5)电连接;
上述第3开关元件(3)的集电极或漏极通过焊料(17)与金属制的上述支撑板(5)电连接。
8.如权利要求3中所述的半导体装置,其特征在于:
上述第1半导体元件层叠体(7)的第1开关元件(1)和第2开关元件(2)、与上述第2半导体元件层叠体(8)的第3开关元件(3)和第4开关元件(4)构成H型桥式电路(10);
上述H型桥式电路(10)的正侧端子与上述支撑板(5)形成为一体且从上述支撑板(5)引出;
上述H型桥式电路(10)的负侧端子从上述支撑板(5)离开地形成;
上述第2开关元件(2)的发射极或源极和上述第4开关元件(4)的发射极或源极分别通过导线与上述H型桥式电路(10)的负侧端子电连接。
9.如权利要求1或3中所述的半导体装置,其特征在于:
发射极或源极形成在构成上述开关元件的半导体衬底的上面;上述集电极或漏极形成在上述半导体衬底的下面。
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JP2007019215A (ja) * | 2005-07-07 | 2007-01-25 | Sanken Electric Co Ltd | 半導体装置及びその製法 |
JP2007027432A (ja) * | 2005-07-15 | 2007-02-01 | Sanken Electric Co Ltd | 半導体装置 |
JP5481104B2 (ja) | 2009-06-11 | 2014-04-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
DE102013008193A1 (de) | 2013-05-14 | 2014-11-20 | Audi Ag | Vorrichtung und elektrische Baugruppe zum Wandeln einer Gleichspannung in eine Wechselspannung |
CN103824832B (zh) * | 2014-03-13 | 2016-08-24 | 杭州明果教育咨询有限公司 | 一种多mosfet集成六桥臂封装模块 |
JP2018503250A (ja) * | 2014-12-10 | 2018-02-01 | 日本テキサス・インスツルメンツ株式会社 | パワー電界効果トランジスタ(fet)、プリドライバ、コントローラ、及び感知レジスタの統合 |
US10204847B2 (en) | 2016-10-06 | 2019-02-12 | Infineon Technologies Americas Corp. | Multi-phase common contact package |
JP6770452B2 (ja) * | 2017-01-27 | 2020-10-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2022136455A (ja) * | 2021-03-08 | 2022-09-21 | 株式会社デンソー | 回路基板内に半導体素子を内蔵する半導体モジュール |
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