CN103824832B - 一种多mosfet集成六桥臂封装模块 - Google Patents

一种多mosfet集成六桥臂封装模块 Download PDF

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CN103824832B
CN103824832B CN201410091960.3A CN201410091960A CN103824832B CN 103824832 B CN103824832 B CN 103824832B CN 201410091960 A CN201410091960 A CN 201410091960A CN 103824832 B CN103824832 B CN 103824832B
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周华丰
张文华
马关金
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HUACHEN XINRI NEW ENERGY AUTOMOBILE Co.,Ltd.
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Abstract

一种多MOSFET集成六桥臂封装模块，属于半导体封装技术领域。其特征在于多MOSFET晶片在敷铜基板上封装成六个桥臂，集成为三相全桥电机驱动模块，一组MOSFET的源极与另一组MOSFET的漏极连接时共用一块敷铜，相同输出引线的两个MOSFET共用一片敷铜。上述一种多MOSFET集成六桥臂封装模块，通过合理排布MOSFET管芯在敷铜基板上的布局，大大减小敷铜基板的使用面积，使得整个开关元件体积大大缩小，降低成本；通过设计新型封装方法减少了热量的中间传导层，使得散热效率有了很大提高，进而提高控制器的可靠性。

Description

一种多MOSFET集成六桥臂封装模块
技术领域
本发明属于半导体封装技术领域，具体为一种多MOSFET集成六桥臂封装模块。
背景技术
多MOSFET集成封装模块最主要是在直接敷铜基板(DBC)上布局MOSFET芯片、二极管芯片、功率端子。在对这种模块中的整体结构进行设计时，要考虑热设计、结构应力设计、EMC 设计和电路结构设计，此还同时要考虑设计产品的生产成本。现有的多MOSFET集成封装模块设计中存在的主要问题是产品的可靠性低、生产工艺复杂，生产成本高。
发明内容
针对现有技术中存在的上述问题，本发明的目的在于设计提供一种多MOSFET集成六桥臂封装模块的技术方案，结合MOSFET晶元的三相、正负、空间结构、电流强度、散热等方面综合考虑，其合理布线，减少铝键合线的使用，增强并联晶元的开断一致性，缩小整个功率器件体积。
所述的一种多MOSFET集成六桥臂封装模块, 其特征在于多MOSFET晶片在敷铜基板上封装成六个桥臂，集成为三相全桥电机驱动模块，一组MOSFET的源极与另一组MOSFET的漏极连接时共用一块敷铜，相同输出引线的两个MOSFET共用一片敷铜。
所述的一种多MOSFET集成六桥臂封装模块，其特征在于每组MOSFET的栅极引出敷铜线设置成衣架形状，且在栅极引出敷铜线中间设置焊接点。
所述的一种多MOSFET集成六桥臂封装模块，其特征在于敷铜基板上设置一组测温组件。
所述的一种多MOSFET集成六桥臂封装模块，其特征在于每组MOSFET中设置一组并联的电阻。
上述一种多MOSFET集成六桥臂封装模块，通过合理排布MOSFET管芯在敷铜基板上的布局，大大减小敷铜基板的使用面积，使得整个开关元件体积大大缩小，降低成本；通过设计新型封装方法减少了热量的中间传导层，使得散热效率有了很大提高，进而提高控制器的可靠性。
附图说明
图1 为本发明的结构示意图；
图2为本发明的电路原理图；
图中：1-MOSFET的漏极、2-MOSFET的栅极、3-焊接点、4-敷铜基板、5-电阻、6-MOSFET的源极、7-测温组件。
具体实施方式
以下结合说明书附图对本发明作进一步说明。
如图1所示，多MOSFET晶片在敷铜基板4上封装成六个桥臂，集成为三相全桥电机驱动模块。本发明在敷铜基板4进行刻蚀时，根据电机驱动的使用场合进行设计，一组MOSFET的源极6与另一组MOSFET的漏极1连接时共用一块敷铜，相同输出引线的两个MOSFET共用一片敷铜，减小敷铜使用面积，缩小体积，降低成本。每组MOSFET的栅极2引出敷铜线设置成衣架形状，且在栅极引出敷铜线中间设置焊接点3，减小布线的电感影响，使得每组内MOSFET的开通关断时刻尽量一致，减小MOSFET的发热量，进而提高控制器的可靠性。敷铜基板4上根据发热区域合理布局了多个测温组件7。每组MOSFET中设置一组并联的电阻5。
如图2所示，MOSFET Q1、MOSFET Q2、MOSFET Q3、MOSFET Q4、MOSFET Q5的2脚连接在一起，并且与电源正极相连，MOSFET Q1、MOSFET Q2、MOSFET Q3、MOSFET Q4、MOSFET Q5的3脚连接在一起，并与电机U相相连，MOSFET Q1的1脚与电阻R1相连，MOSFET Q2的1脚与电阻R2相连，MOSFET Q3的1脚与电阻R3相连，MOSFET Q4的1脚与电阻R4相连，MOSFET Q5的1脚与电阻R5相连，电阻R1，R2，R3，R4，R5的另一端连接在一起，并与U相上臂驱动相连。MOSFET Q16、MOSFET Q17、MOSFET Q18、MOSFET Q19、MOSFET Q20的2脚连接在一起，并且与电机U相相连，MOSFET Q16、MOSFET Q17、MOSFET Q18、MOSFET Q19、MOSFET Q20的3脚连接在一起，并与电源负极相连，MOSFET Q16的1脚与电阻R16相连，MOSFET Q17的1脚与电阻R17相连，MOSFET Q18的1脚与电阻R18相连，MOSFET Q19的1脚与电阻R19相连，MOSFET Q20的1脚与电阻R20相连，电阻R16，R17，R18，R19，R20的另一端连接在一起，并与U相下臂驱动相连。
MOSFET Q6、MOSFET Q7、MOSFET Q8、MOSFET Q9、MOSFET Q10的2脚连接在一起，并且与电源正极相连，MOSFET Q6、MOSFET Q7、MOSFET Q8、MOSFET Q9、MOSFET Q10的3脚连接在一起，并与电机V相相连，MOSFET Q6的1脚与电阻R6相连，MOSFET Q7的1脚与电阻R7相连，MOSFET Q8的1脚与电阻R8相连，MOSFET Q9的1脚与电阻R9相连，MOSFET Q10的1脚与电阻R10相连，电阻R6，R7，R8，R9，R10的另一端连接在一起，并与V相上臂驱动相连。
MOSFET Q21、MOSFET Q22、MOSFET Q23、MOSFET Q24、MOSFET Q25的2脚连接在一起，并且与电机V相相连，MOSFET Q21、MOSFET Q22、MOSFET Q23、MOSFET Q24、MOSFET Q25的3脚连接在一起，并与电源负极相连，MOSFET Q21的1脚与电阻R21相连，MOSFET Q22的1脚与电阻R22相连，MOSFET Q23的1脚与电阻R23相连，MOSFET Q24的1脚与电阻R24相连，MOSFET Q25的1脚与电阻R25相连，电阻R21，R22，R23，R24，R25的另一端连接在一起，并与V相下臂驱动相连。
MOSFET Q11、MOSFET Q12、MOSFET Q13、MOSFET Q14、MOSFET Q15的2脚连接在一起，并且与电源正极相连，MOSFET Q11、MOSFET Q12、MOSFET Q13、MOSFET Q14、MOSFET Q15的3脚连接在一起，并与电机W相相连，MOSFET Q11的1脚与电阻R11相连，MOSFET Q12的1脚与电阻R12相连，MOSFET Q13的1脚与电阻R13相连，MOSFET Q14的1脚与电阻R14相连，MOSFET Q15的1脚与电阻R15相连，电阻R11，R12，R13，R14，R15的另一端连接在一起，并与W相上臂驱动相连。
MOSFET Q26、MOSFET Q27、MOSFET Q28、MOSFET Q29、MOSFET Q30的2脚连接在一起，并且与电机W相相连，MOSFET Q26、MOSFET Q27、MOSFET Q28、MOSFET Q29、MOSFET Q30的3脚连接在一起，并与电源负极相连，MOSFET Q26的1脚与电阻R26相连，MOSFET Q27的1脚与电阻R27相连，MOSFET Q28的1脚与电阻R28相连，MOSFET Q29的1脚与电阻R29相连，MOSFET Q30的1脚与电阻R30相连，电阻R26，R27，R28，R29，R30的另一端连接在一起，并与W相下臂驱动相连。

Claims (1)

1.一种多MOSFET集成六桥臂封装模块, 其特征在于多MOSFET晶片在敷铜基板（4）上封装成六个桥臂，集成为三相全桥电机驱动模块，一组MOSFET的源极（6）与另一组MOSFET的漏极（1）连接时共用一块敷铜，相同输出引线的两个MOSFET共用一片敷铜，每组MOSFET的栅极（2）引出敷铜线设置成衣架形状，且在栅极引出敷铜线中间设置焊接点（3），敷铜基板（4）上设置一组测温组件（7），每组MOSFET中设置一组并联的电阻（5）；
MOSFET Q1、MOSFET Q2、MOSFET Q3、MOSFET Q4、MOSFET Q5的2脚连接在一起，并且与电源正极相连，MOSFET Q1、MOSFET Q2、MOSFET Q3、MOSFET Q4、MOSFET Q5的3脚连接在一起，并与电机U相相连，MOSFET Q1的1脚与电阻R1相连，MOSFET Q2的1脚与电阻R2相连，MOSFET Q3的1脚与电阻R3相连，MOSFET Q4的1脚与电阻R4相连，MOSFET Q5的1脚与电阻R5相连，电阻R1，R2，R3，R4，R5的另一端连接在一起，并与U相上臂驱动相连;MOSFET Q16、MOSFET Q17、MOSFET Q18、MOSFET Q19、MOSFET Q20的2脚连接在一起，并且与电机U相相连，MOSFET Q16、MOSFET Q17、MOSFET Q18、MOSFET Q19、MOSFET Q20的3脚连接在一起，并与电源负极相连，MOSFET Q16的1脚与电阻R16相连，MOSFET Q17的1脚与电阻R17相连，MOSFET Q18的1脚与电阻R18相连，MOSFET Q19的1脚与电阻R19相连，MOSFET Q20的1脚与电阻R20相连，电阻R16，R17，R18，R19，R20的另一端连接在一起，并与U相下臂驱动相连；
MOSFET Q6、MOSFET Q7、MOSFET Q8、MOSFET Q9、MOSFET Q10的2脚连接在一起，并且与电源正极相连，MOSFET Q6、MOSFET Q7、MOSFET Q8、MOSFET Q9、MOSFET Q10的3脚连接在一起，并与电机V相相连，MOSFET Q6的1脚与电阻R6相连，MOSFET Q7的1脚与电阻R7相连，MOSFET Q8的1脚与电阻R8相连，MOSFET Q9的1脚与电阻R9相连，MOSFET Q10的1脚与电阻R10相连，电阻R6，R7，R8，R9，R10的另一端连接在一起，并与V相上臂驱动相连；
MOSFET Q21、MOSFET Q22、MOSFET Q23、MOSFET Q24、MOSFET Q25的2脚连接在一起，并且与电机V相相连，MOSFET Q21、MOSFET Q22、MOSFET Q23、MOSFET Q24、MOSFET Q25的3脚连接在一起，并与电源负极相连，MOSFET Q21的1脚与电阻R21相连，MOSFET Q22的1脚与电阻R22相连，MOSFET Q23的1脚与电阻R23相连，MOSFET Q24的1脚与电阻R24相连，MOSFET Q25的1脚与电阻R25相连，电阻R21，R22，R23，R24，R25的另一端连接在一起，并与V相下臂驱动相连；
MOSFET Q11、MOSFET Q12、MOSFET Q13、MOSFET Q14、MOSFET Q15的2脚连接在一起，并且与电源正极相连，MOSFET Q11、MOSFET Q12、MOSFET Q13、MOSFET Q14、MOSFET Q15的3脚连接在一起，并与电机W相相连，MOSFET Q11的1脚与电阻R11相连，MOSFET Q12的1脚与电阻R12相连，MOSFET Q13的1脚与电阻R13相连，MOSFET Q14的1脚与电阻R14相连，MOSFET Q15的1脚与电阻R15相连，电阻R11，R12，R13，R14，R15的另一端连接在一起，并与W相上臂驱动相连；
MOSFET Q26、MOSFET Q27、MOSFET Q28、MOSFET Q29、MOSFET Q30的2脚连接在一起，并且与电机W相相连，MOSFET Q26、MOSFET Q27、MOSFET Q28、MOSFET Q29、MOSFET Q30的3脚连接在一起，并与电源负极相连，MOSFET Q26的1脚与电阻R26相连，MOSFET Q27的1脚与电阻R27相连，MOSFET Q28的1脚与电阻R28相连，MOSFET Q29的1脚与电阻R29相连，MOSFET Q30的1脚与电阻R30相连，电阻R26，R27，R28，R29，R30的另一端连接在一起，并与W相下臂驱动相连。
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CN203774296U (zh) * 2014-03-13 2014-08-13 杭州明果教育咨询有限公司 一种多mosfet集成六桥臂封装模块

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