JP5789264B2 - 回路装置 - Google Patents
回路装置 Download PDFInfo
- Publication number
- JP5789264B2 JP5789264B2 JP2012534923A JP2012534923A JP5789264B2 JP 5789264 B2 JP5789264 B2 JP 5789264B2 JP 2012534923 A JP2012534923 A JP 2012534923A JP 2012534923 A JP2012534923 A JP 2012534923A JP 5789264 B2 JP5789264 B2 JP 5789264B2
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- Prior art keywords
- lead
- circuit board
- circuit
- ceramic substrate
- leads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 104
- 239000000919 ceramic Substances 0.000 claims description 73
- 239000000463 material Substances 0.000 claims description 51
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 229920005989 resin Polymers 0.000 claims description 24
- 239000011347 resin Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 24
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 229910000679 solder Inorganic materials 0.000 description 20
- 229910001111 Fine metal Inorganic materials 0.000 description 18
- 238000007789 sealing Methods 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010248 power generation Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910003480 inorganic solid Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
Images
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
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- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
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Description
12 回路基板
14 ケース材
16 封止樹脂
18、18A、18B、18C、18D、18E、18F、18G アイランド
20 金属膜
22、22A、22B.22C、22D、22E、22F、22G セラミック基板
24 導電パターン
26 金属細線
28 リード
29 リード
30 リード
31、31A、31B、31C リード
34 トランジスタ
36 ダイオード
38 固着材
40 配線リード
42 基板
44 信号リード
46 酸化膜
48 酸化膜
50 絶縁層
70 太陽電池
72 太陽電池開閉部
74 昇圧チョッパ
76 インバータ
78 リレー
80 リレー
82 電力系統
84 自立運転用負荷
86 コンバータ
Q1、Q2、Q3、Q4、Q5、Q31、Q32 トランジスタ
D1、D2、D3、D31、D32、D32、D34 ダイオード
Claims (8)
- 回路基板と、
前記回路基板の上面に配置された半導体素子と、
前記回路基板の上面にて前記半導体素子に電気的に接続される第1リードと、
前記半導体素子と電気的に接続されると共に、少なくとも一部が前記第1リードと重畳する第2リードと、
前記半導体素子と電気的に接続されると共に、少なくとも一部が前記第1リードおよび前記第2リードと重畳する複数の第3リードと、を備え、
前記第1リード、前記第2リードおよび前記第3リードの一部は、前記回路基板の中央部付近の重畳領域で重畳し、
前記第3リードは、前記重畳領域で前記第1リードおよび前記第2リードと重畳する第1部分と、前記重畳領域から外部まで伸びる第2部分とを有し、L字状を呈し、
前記第2リードの両端部は、前記回路基板の周縁部よりも内側に配置され、
前記第1リードおよび前記第3リードの端部は、前記回路基板の周縁部よりも外側に配置されて外部に導出されることを特徴とする回路装置。 - 前記回路基板の上面に組み込まれる額縁形状のケース材を更に備え、
前記第1リード、前記第2リードおよび前記第3リードは、前記ケース材に組み込まれた状態で、前記回路基板の上面に配置されることを特徴とする請求項1に記載の回路装置。 - 前記第1リード、前記第2リードおよび前記第3リードは、前記ケース材を構成する樹脂材料により互いに絶縁されることを特徴とする請求項2に記載の回路装置。
- 前記第1リードと前記回路基板とは、前記ケース材を構成する樹脂材料により互いに絶縁されることを特徴とする請求項2または請求項3に記載の回路装置。
- 前記回路基板の上面にはインバータ回路が組み込まれ、
前記第1リードおよび前記第2リードは、直流電力が外部から供給されるリードであり、
前記第3リードは、前記インバータ回路により変換された交流電力が外部に出力されるリードであることを特徴とする請求項1から請求項4の何れかに記載の回路装置。 - 前記回路基板は金属からなる基板であり、
前記半導体素子は、前記回路基板の上面に固着されたセラミック基板の上面に実装されることを特徴とする請求項1から請求項5の何れかに記載の回路装置。 - 前記第3リードの前記第1部分は、前記第1リードおよび前記第2リードの上方で、実質的に直線状に延在することを特徴とする請求項1から請求項6の何れかに記載の回路装置。
- 前記回路基板の上面には導電パターンが形成されないことを特徴とする請求項1から請求項7の何れかに記載の回路装置。
Priority Applications (1)
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JP2012534923A JP5789264B2 (ja) | 2010-09-24 | 2011-09-15 | 回路装置 |
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JP2010213695 | 2010-09-24 | ||
JP2010213695 | 2010-09-24 | ||
PCT/JP2011/005209 WO2012039114A1 (ja) | 2010-09-24 | 2011-09-15 | 回路装置 |
JP2012534923A JP5789264B2 (ja) | 2010-09-24 | 2011-09-15 | 回路装置 |
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JPWO2012039114A1 JPWO2012039114A1 (ja) | 2014-02-03 |
JP5789264B2 true JP5789264B2 (ja) | 2015-10-07 |
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JP (1) | JP5789264B2 (ja) |
WO (1) | WO2012039114A1 (ja) |
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DE102011122371A1 (de) * | 2011-12-22 | 2013-06-27 | Kathrein-Werke Kg | Elektrische Anschlusseinrichtung zur Herstellung einer Lötverbindung |
JP5660076B2 (ja) * | 2012-04-26 | 2015-01-28 | 三菱電機株式会社 | 半導体装置とその製造方法 |
WO2013171996A1 (ja) * | 2012-05-16 | 2013-11-21 | パナソニック株式会社 | 電力用半導体モジュール |
WO2013189756A1 (en) * | 2012-06-19 | 2013-12-27 | Abb Technology Ag | Substrate for mounting multiple power transistors thereon and power semiconductor module |
US11574889B2 (en) * | 2013-06-04 | 2023-02-07 | Infineon Technologies Ag | Power module comprising two substrates and method of manufacturing the same |
WO2016002385A1 (ja) | 2014-07-03 | 2016-01-07 | 日産自動車株式会社 | ハーフブリッジパワー半導体モジュール及びその製造方法 |
US10257937B2 (en) * | 2014-07-07 | 2019-04-09 | Infineon Technologies Austria Ag | Device for electrically coupling a plurality of semiconductor device layers by a common conductive layer |
EP2996449B1 (de) * | 2014-09-11 | 2017-11-29 | Siemens Aktiengesellschaft | Stromrichteranordnung mit einem mehrphasigen Stromrichter |
EP3226294B1 (en) * | 2014-11-28 | 2021-04-07 | Nissan Motor Co., Ltd. | Half-bridge power semiconductor module and method for manufacturing same |
US20190287943A1 (en) * | 2015-08-31 | 2019-09-19 | Delta Electronics (Shanghai) Co., Ltd | Power package module of multiple power chips and method of manufacturing power chip unit |
CN106486458B (zh) * | 2015-08-31 | 2019-03-15 | 台达电子企业管理(上海)有限公司 | 多功率芯片的功率封装模块及功率芯片单元的制造方法 |
CN110050339B (zh) * | 2016-12-16 | 2023-12-22 | 日立能源有限公司 | 具有低栅极通路电感的功率半导体模块 |
US11251161B2 (en) * | 2017-09-28 | 2022-02-15 | Mitsubishi Electric Corporation | 2-in-1 type chopper module |
JP6819540B2 (ja) * | 2017-10-23 | 2021-01-27 | 三菱電機株式会社 | 半導体装置 |
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US9363894B2 (en) | 2016-06-07 |
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US20130286618A1 (en) | 2013-10-31 |
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