JP2008131039A - 電子素子内蔵型印刷回路基板の製造方法 - Google Patents

電子素子内蔵型印刷回路基板の製造方法 Download PDF

Info

Publication number
JP2008131039A
JP2008131039A JP2007283566A JP2007283566A JP2008131039A JP 2008131039 A JP2008131039 A JP 2008131039A JP 2007283566 A JP2007283566 A JP 2007283566A JP 2007283566 A JP2007283566 A JP 2007283566A JP 2008131039 A JP2008131039 A JP 2008131039A
Authority
JP
Japan
Prior art keywords
electronic element
circuit board
printed circuit
tape
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007283566A
Other languages
English (en)
Inventor
Seung-Gu Kim
キム スン−グ
Je-Gwang Yoo
ヨー ジェ−グワン
Doo-Hwan Lee
リー ドゥ−ファン
Moon-Il Kim
キム ムーン−イル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electro Mechanics Co Ltd
Original Assignee
Samsung Electro Mechanics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mechanics Co Ltd filed Critical Samsung Electro Mechanics Co Ltd
Publication of JP2008131039A publication Critical patent/JP2008131039A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/182Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68309Auxiliary support including alignment aids
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241Disposition
    • H01L2224/24151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/24227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/921Connecting a surface with connectors of different types
    • H01L2224/9212Sequential connecting processes
    • H01L2224/92142Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92144Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3511Warping
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01Tools for processing; Objects used during processing
    • H05K2203/0147Carriers and holders
    • H05K2203/0156Temporary polymeric carrier or foil, e.g. for processing or transferring
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4602Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4652Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49126Assembling bases
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49128Assembling formed circuit to base
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155Manufacturing circuit on or in base
    • Y10T29/49165Manufacturing circuit on or in base by forming conductive walled aperture in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

【課題】異種材料を最小限に使用して電子素子を内蔵することにより、印刷回路基板の反りを防止できる電子素子内蔵型印刷回路基板の製造方法を提供する。
【解決手段】本発明のよる電子素子内蔵型印刷回路基板の製造方法は、(a)表面に回路パターンが形成されたコア基板に貫通ホールを穿孔する段階と、(b)コア基板の一側にテープを付着し、電子素子を、貫通ホールのテープが露出された部分に付着する段階と、(c)貫通ホールと電子素子との間の空隙の一部に接着剤を充填して電子素子を固定する段階と、(d)テープを除去する段階と、及び(e)コア基板の両側に絶縁剤を一括に積層して貫通ホールと電子素子との間の空隙のその他の部分を絶縁剤の一部で充填する段階とを含むことを特徴とする。
【選択図】図2

Description

本発明は、電子素子内蔵型印刷回路基板の製造方法に関する。
携帯用電子機器の小型化により電子部品の実装面積が減少している。従来集積回路(Integrated Circuit:IC )パッケージでは、高密度化のために受動素子と能動素子とを上に積み上げる3Dパッケージの形態であった。このような集積回路パッケージは、実装面積の減少にある程度効果的であった。
しかし、表面実装では小型化に限界があり、能動型や受動型の電子素子を基板内に内蔵することにより、さらに効果のある小型高密度化を具現することができる。電子素子内蔵型基板を製造する代表的な方法を説明すると、次の通りである。
先ず、銅箔積層板の電子素子が内蔵される位置に貫通ホールを穿孔する。以後、貫通ホールの一面にテープを付着し、貫通ホールの内部の露出されたテープの接着面に電子素子を付着する。次に、貫通ホールのその他の部分を充填材で充填し、充填材が硬化されたらテープを除去する。テープが除去された面には、電子素子の電気接点が露出されるが、このような露出された電気接点と回路パターンとを連結するために無電解メッキ及び電解メッキの過程を経る。無電解メッキは、充填材が非伝導性であるため追加される工程である。メッキ工程が終わると、回路パターン形成工程が行われる。
しかし、上記工程において、貫通ホールに電子素子を挿入した後に充填材で貫通ホールを充填する方法は、異種の物質が互いに境界面に接しているので、物理的環境の変化に応じて基板が反るなどの副作用が発生する。
本発明は、異種材料を最小限に使用することにより電子素子を内蔵しても、基板の反り現象が最小化される電子素子内蔵型印刷回路基板の製造方法を提供する。
本発明の一実施形態によれば、(a)表面に回路パターンの形成されたコア基板に貫通ホールを穿孔する段階と、(b)コア基板の一側にテープを付着して電子素子を、貫通ホールの内部のテープが露出された部分に付着する段階と、(c)貫通ホールと電子素子との間の空隙の一部に接着剤を充填して電子素子を固定する段階と、(d)テープを除去する段階と、及び(e)コア基板の両側に絶縁剤を一括積層して、貫通ホールと電子素子との間の空隙のその他の部分を絶縁剤の一部で充填する段階とを含む電子素子内蔵型印刷回路基板の製造方法が提供される。
上記段階(e)の後に、絶縁剤の表面に回路パターンを形成する段階をさらに含むことができる。
本発明によれば、電子素子を印刷回路基板に内蔵する時、最小限の接着剤を用いて固定するので、異種材料を用いて電子素子を内蔵する場合に発生する基板の反り現象を防止することができる。
以下、本発明による電子素子内蔵型印刷回路基板の製造方法の好ましい実施例を添付図面を参照して詳しく説明する。添付図面を参照して説明することにおいて、図面符号にかかわらず同一である構成要素は同一の参照符号を付与し、これに対する重複される説明は略する。
図1は、本発明の好ましい一実施例による電子素子内蔵型印刷回路基板の製造方法に対するフローチャートであり、図2は、本発明の好ましい一実施例による電子素子内蔵型印刷回路基板の製造方法に対する工程図である。図2を参照すると、コア基板20、絶縁層21a、回路パターン21及び29、貫通ホール22、テープ23、電子素子24、パッド24a、接着剤25、絶縁剤26、印刷回路基板200が示されている。
図1の段階S11は、表面に回路パターン21が形成されたコア基板20に貫通ホール22を穿孔する段階であり、図2の(a)が、これに対応する工程である。コア基板20は、絶縁層21aの表面に回路パターン21が形成された形態である。回路パターン21は、サブトラクティブ(subtractive)、セミアディティブ(semi−additive)などのような一般的な工法で形成される。貫通ホール22は、コア基板20に電子素子24が実装される位置を選別して穿孔する。穿孔方法としては、機械的なドリルを用いることがよい。
図1の段階S12は、コア基板20の一側にテープを付着して電子素子24を、貫通ホール22の内のテープ23が露出された部分に付着する段階であり、図2の(b)と(c)が、これに対応する工程である。テープ23は、貫通ホール22の一側を遮断して、電子素子24が接着剤25により固定される前に臨時的に固定させるための材料である。電子素子24は貫通ホール22に挿入されるが、この時、パッド24aがテープ23と接触されるように挿入することがよい。
図1の段階S13は、貫通ホール22と電子素子24との間の空隙27の一部に接着剤25を充填して上記電子素子24を固定する段階であり、S14は、テープ23を除去する段階であり、図2の(d)と(e)は、これに対応する工程である。接着剤25は、絶縁層21aの材質とは異なって、異種材料は熱膨脹係数が異なるため、外部の熱に露出される場合基板が反る原因となる。これは、製品の信頼性にかなり悪影響を及ぼす。従って、このような異種材料間の接触を最小化することが重要である。本工程の接着剤25は、電子素子24を一定時間だけ貫通ホール22に固定させる役目をすればよい。よって、電子素子24と貫通ホール22との間の空隙をすべて接着剤25で充填する必要はなく、電子素子24が臨時的に固定される程度で用いればいい。よって、空隙27の一部だけに接着剤25が充填されることになる。本実施例にように電子素子24を固定する場合、接着剤25の使用量が少ないので、異種材料の間で発生し得る問題は減少する。図3及び図4は、それぞれ空隙27の二つの地点と四つの地点に接着剤25を充填して電子素子24を固定する形態を示す。
接着剤25が充分に硬化されたら、テープ23を除去する。テープ23は、穿孔ホール22に電子素子24を固定するために用いられる一時的な材料であり、以後の工程のために除去することがよい。
図1の段階S15は、コア基板20の両側に絶縁剤26を一括積層して貫通ホール22と電子素子24との間の空隙27のその他の部分を絶縁剤26で充填する段階であり、図2の(f)と(g)は、これに対応する工程である。また、絶縁剤26としては、比較的に流れのよいレジンの含量が高いものがよい。この段階で熱を加えて圧着する場合、絶縁剤26の一部であるレジンが空隙27のその他の部分に流れ込んで充填されるようになる。以後、温度を低めると絶縁剤26は硬化され、空隙27に流れ込んだレジンも硬化されて電子素子24は安定的に固定される。
以後、図2の(h)のように、絶縁剤26の表面に追加的に回路パターン29を形成することができる。この場合に回路パターン29の一部は、パッド24aと電気的に接続することが好ましい。さらに、回路パターン29の一部が、回路パターン21と電気的に接続してもよいし、パッド24aと回路パターン21との間を電気的に接続してもよい。
本発明の技術思想が上述した実施例により具体的に記述されたが、上述した実施例はその説明のためのものであり、その制限のためのものではないし、本発明の技術分野において通常の専門家であれば、本発明の技術思想の範囲内で多様な実施例が可能であることを理解できるだろう。
本発明の好ましい一実施例による電子素子内蔵型印刷回路基板の製造方法のフローチャートである。 本発明の好ましい一実施例による電子素子内蔵型印刷回路基板の製造方法の工程図である。 本発明の好ましい一実施例による電子素子内蔵型印刷回路基板の平面図である。 本発明の好ましい一実施例による電子素子内蔵型印刷回路基板の平面図である。
符号の説明
20 コア基板
21a 絶縁層
21 回路パターン
22 貫通ホール
23 テープ
24 電子素子
24a パッド
25 接着剤
26 絶縁剤

Claims (2)

  1. (a)表面に回路パターンが形成されたコア基板に貫通ホールを穿孔する段階と、
    (b)前記コア基板の一側にテープを付着し、電子素子を前記貫通ホールの内の前記テープが露出された部分に付着する段階と、
    (c)前記貫通ホールと前記電子素子との間の空隙の一部に接着剤を充填し、前記電子素子を固定する段階と、
    (d)前記テープを除去する段階と、及び
    (e)前記コア基板の両側に絶縁剤を一括積層し、前記貫通ホールと前記電子素子との間の空隙のその他の部分を前記絶縁剤で充填する段階と
    を含む電子素子内蔵型印刷回路基板の製造方法。
  2. 前記段階(e)の後に、前記絶縁剤の表面に回路パターンを形成する段階をさらに含む請求項1記載の電子素子内蔵型印刷回路基板の製造方法。
JP2007283566A 2006-11-21 2007-10-31 電子素子内蔵型印刷回路基板の製造方法 Pending JP2008131039A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060115399A KR100788213B1 (ko) 2006-11-21 2006-11-21 전자소자 내장형 인쇄회로기판의 제조방법

Publications (1)

Publication Number Publication Date
JP2008131039A true JP2008131039A (ja) 2008-06-05

Family

ID=39147865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007283566A Pending JP2008131039A (ja) 2006-11-21 2007-10-31 電子素子内蔵型印刷回路基板の製造方法

Country Status (4)

Country Link
US (1) US20080115349A1 (ja)
JP (1) JP2008131039A (ja)
KR (1) KR100788213B1 (ja)
CN (1) CN101188915B (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010038489A1 (ja) * 2008-09-30 2010-04-08 イビデン株式会社 電子部品内蔵配線板及びその製造方法
KR100969438B1 (ko) 2008-07-03 2010-07-14 삼성전기주식회사 전자소자 내장 인쇄회로기판의 제조방법
JP2012015484A (ja) * 2010-07-01 2012-01-19 Samsung Electro-Mechanics Co Ltd エンベデッド基板の製造方法
JP5093353B2 (ja) * 2008-08-12 2012-12-12 株式会社村田製作所 部品内蔵モジュールの製造方法及び部品内蔵モジュール
KR101283821B1 (ko) * 2011-05-03 2013-07-08 엘지이노텍 주식회사 인쇄회로기판의 제조 방법
KR101356353B1 (ko) 2011-10-11 2014-01-27 이비덴 가부시키가이샤 프린트 배선판
JP2016111359A (ja) * 2014-12-05 2016-06-20 サムソン エレクトロ−メカニックス カンパニーリミテッド. 電子部品内蔵印刷回路基板及びその製造方法
CN110461090A (zh) * 2019-08-05 2019-11-15 华为技术有限公司 电路组件以及电子设备

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101055471B1 (ko) * 2008-09-29 2011-08-08 삼성전기주식회사 전자소자 내장형 인쇄회로기판 및 그 제조방법
KR100992664B1 (ko) 2009-03-03 2010-11-05 주식회사 코리아써키트 회로기판 제조방법
JP5001395B2 (ja) 2010-03-31 2012-08-15 イビデン株式会社 配線板及び配線板の製造方法
KR101075645B1 (ko) 2010-08-18 2011-10-21 삼성전기주식회사 임베디드 회로기판의 제조 방법
KR101084776B1 (ko) 2010-08-30 2011-11-21 삼성전기주식회사 전자소자 내장 기판 및 그 제조방법
JP2013074178A (ja) * 2011-09-28 2013-04-22 Ngk Spark Plug Co Ltd 部品内蔵配線基板の製造方法
US9281260B2 (en) * 2012-03-08 2016-03-08 Infineon Technologies Ag Semiconductor packages and methods of forming the same
CN103635028B (zh) * 2012-08-22 2017-02-08 健鼎(无锡)电子有限公司 埋入式元件电路板与其制作方法
KR102042033B1 (ko) * 2012-10-30 2019-11-08 엘지이노텍 주식회사 칩 실장형 인쇄회로기판 및 그 제조방법
KR101440327B1 (ko) * 2013-02-19 2014-09-15 주식회사 심텍 칩 내장형 임베디드 인쇄회로기판 및 그 제조방법
JP2015015350A (ja) * 2013-07-04 2015-01-22 株式会社ジェイテクト 半導体装置
CN103491719B (zh) * 2013-09-22 2017-01-18 Tcl通讯(宁波)有限公司 一种pcb板及pcb板埋入被动元件的方法
KR102619466B1 (ko) 2016-06-13 2024-01-02 삼성전자주식회사 팬 아웃 패널 레벨 패키지의 제조 방법 및 그에 사용되는 캐리어 테이프 필름
CN112201652A (zh) * 2019-07-07 2021-01-08 深南电路股份有限公司 线路板及其制作方法
CN111330799B (zh) * 2020-03-03 2021-06-29 深圳市华成泰科技有限公司 一种智能柔性片式电感印刷生产线

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0236037U (ja) * 1988-08-31 1990-03-08
JP2002329803A (ja) * 2001-04-27 2002-11-15 Mitsubishi Electric Corp 電子回路モジュールおよびその製造方法
JP2003309243A (ja) * 2002-04-15 2003-10-31 Ngk Spark Plug Co Ltd 配線基板の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5094969A (en) * 1989-09-14 1992-03-10 Litton Systems, Inc. Method for making a stackable multilayer substrate for mounting integrated circuits
US5306670A (en) * 1993-02-09 1994-04-26 Texas Instruments Incorporated Multi-chip integrated circuit module and method for fabrication thereof
JP2001251056A (ja) * 2000-03-03 2001-09-14 Sony Corp プリント配線基板の製造方法
US7855342B2 (en) * 2000-09-25 2010-12-21 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US20050155957A1 (en) * 2001-02-26 2005-07-21 John Gregory Method of forming an opening or cavity in a substrate for receiving an electronic component
JP2002324958A (ja) 2001-04-25 2002-11-08 Sony Corp プリント配線板と、その製造方法
FI115285B (fi) * 2002-01-31 2005-03-31 Imbera Electronics Oy Menetelmä komponentin upottamiseksi alustaan ja kontaktin muodostamiseksi
KR100498975B1 (ko) 2002-12-30 2005-07-01 삼성전기주식회사 인쇄회로기판 제조 공정 중에 비아홀 내에 emc가침입하지 않는 패키지 및 그 제조 방법
KR100643935B1 (ko) * 2005-06-30 2006-11-10 삼성전기주식회사 병렬 칩 내장 인쇄회로기판 및 그 제조방법
KR100648971B1 (ko) 2005-10-05 2006-11-27 삼성전기주식회사 임베디드 인쇄회로기판의 제조방법
KR100643334B1 (ko) 2005-11-09 2006-11-10 삼성전기주식회사 소자 내장 인쇄회로기판 및 그 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0236037U (ja) * 1988-08-31 1990-03-08
JP2002329803A (ja) * 2001-04-27 2002-11-15 Mitsubishi Electric Corp 電子回路モジュールおよびその製造方法
JP2003309243A (ja) * 2002-04-15 2003-10-31 Ngk Spark Plug Co Ltd 配線基板の製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100969438B1 (ko) 2008-07-03 2010-07-14 삼성전기주식회사 전자소자 내장 인쇄회로기판의 제조방법
JP5093353B2 (ja) * 2008-08-12 2012-12-12 株式会社村田製作所 部品内蔵モジュールの製造方法及び部品内蔵モジュール
WO2010038489A1 (ja) * 2008-09-30 2010-04-08 イビデン株式会社 電子部品内蔵配線板及びその製造方法
JPWO2010038489A1 (ja) * 2008-09-30 2012-03-01 イビデン株式会社 電子部品内蔵配線板及びその製造方法
US8466372B2 (en) 2008-09-30 2013-06-18 Ibiden Co., Ltd. Wiring board with built-in electronic component and method for manufacturing the same
JP2012015484A (ja) * 2010-07-01 2012-01-19 Samsung Electro-Mechanics Co Ltd エンベデッド基板の製造方法
KR101283821B1 (ko) * 2011-05-03 2013-07-08 엘지이노텍 주식회사 인쇄회로기판의 제조 방법
US10349519B2 (en) 2011-05-03 2019-07-09 Lg Innotek Co., Ltd. Printed circuit board and method for manufacturing the same
KR101356353B1 (ko) 2011-10-11 2014-01-27 이비덴 가부시키가이샤 프린트 배선판
JP2016111359A (ja) * 2014-12-05 2016-06-20 サムソン エレクトロ−メカニックス カンパニーリミテッド. 電子部品内蔵印刷回路基板及びその製造方法
CN110461090A (zh) * 2019-08-05 2019-11-15 华为技术有限公司 电路组件以及电子设备
CN110461090B (zh) * 2019-08-05 2021-07-16 华为技术有限公司 电路组件以及电子设备

Also Published As

Publication number Publication date
CN101188915A (zh) 2008-05-28
CN101188915B (zh) 2012-03-28
US20080115349A1 (en) 2008-05-22
KR100788213B1 (ko) 2007-12-26

Similar Documents

Publication Publication Date Title
JP2008131039A (ja) 電子素子内蔵型印刷回路基板の製造方法
JP5101542B2 (ja) チップ内蔵印刷回路基板及びその製造方法
JP6504665B2 (ja) 印刷回路基板、その製造方法、及び電子部品モジュール
KR101601815B1 (ko) 임베디드 기판, 인쇄회로기판 및 그 제조 방법
JP2007005768A (ja) 電子部品内蔵の印刷回路基板及びその製作方法
JPWO2010038489A1 (ja) 電子部品内蔵配線板及びその製造方法
KR101516072B1 (ko) 반도체 패키지 및 그 제조 방법
JP6795137B2 (ja) 電子素子内蔵型印刷回路基板の製造方法
KR101506794B1 (ko) 인쇄회로기판 및 그 제조방법
KR100820633B1 (ko) 전자소자 내장 인쇄회로기판 및 그 제조방법
TWI405511B (zh) 具有電子部件的印刷電路板以及其製造方法
KR101874992B1 (ko) 부품 내장형 인쇄회로기판 및 이의 제조방법
KR20160090637A (ko) 인쇄회로기판 및 그 제조방법
KR20090096809A (ko) 반도체 부품 내장형 인쇄회로기판 제조 방법
KR20110100981A (ko) 전자소자 내장형 인쇄회로기판 및 그 제조방법
KR100728748B1 (ko) 임베디드 인쇄회로기판 제조방법
JP2019067858A (ja) プリント配線板及びその製造方法
KR100905642B1 (ko) 칩 내장형 인쇄회로기판 및 그 제조방법
KR100972431B1 (ko) 임베디드 인쇄회로기판 및 그 제조방법
KR100704911B1 (ko) 전자소자 내장형 인쇄회로기판 및 그 제조방법
KR20150059086A (ko) 칩 내장 기판 및 그 제조 방법
KR100762758B1 (ko) 전자소자 내장형 인쇄회로기판 및 그 제조 방법
KR101609268B1 (ko) 임베디드 기판 및 임베디드 기판의 제조 방법
JP2007150111A (ja) 配線基板
JP6523039B2 (ja) プリント配線板及びその製造方法

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091104

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100203

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100413