JP2007513455A5 - - Google Patents
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- JP2007513455A5 JP2007513455A5 JP2006542728A JP2006542728A JP2007513455A5 JP 2007513455 A5 JP2007513455 A5 JP 2007513455A5 JP 2006542728 A JP2006542728 A JP 2006542728A JP 2006542728 A JP2006542728 A JP 2006542728A JP 2007513455 A5 JP2007513455 A5 JP 2007513455A5
- Authority
- JP
- Japan
- Prior art keywords
- nand string
- integrated circuit
- memory
- bit line
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000001629 suppression Effects 0.000 claims 8
- 238000000034 method Methods 0.000 claims 6
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- 230000010354 integration Effects 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/729,865 US20050128807A1 (en) | 2003-12-05 | 2003-12-05 | Nand memory array incorporating multiple series selection devices and method for operation of same |
| PCT/US2004/040283 WO2005057586A2 (en) | 2003-12-05 | 2004-12-02 | Nand memory array incorporating multiple series selection devices and method for operation of same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007513455A JP2007513455A (ja) | 2007-05-24 |
| JP2007513455A5 true JP2007513455A5 (enExample) | 2008-01-31 |
Family
ID=34652706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006542728A Withdrawn JP2007513455A (ja) | 2003-12-05 | 2004-12-02 | 複数の直列選択デバイスを組込んだnandメモリアレイおよびその動作方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20050128807A1 (enExample) |
| EP (1) | EP1695356A2 (enExample) |
| JP (1) | JP2007513455A (enExample) |
| KR (1) | KR20070003818A (enExample) |
| CN (1) | CN1906700A (enExample) |
| WO (1) | WO2005057586A2 (enExample) |
Families Citing this family (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7233522B2 (en) | 2002-12-31 | 2007-06-19 | Sandisk 3D Llc | NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same |
| US7221588B2 (en) * | 2003-12-05 | 2007-05-22 | Sandisk 3D Llc | Memory array incorporating memory cells arranged in NAND strings |
| US20060067127A1 (en) * | 2004-09-30 | 2006-03-30 | Matrix Semiconductor, Inc. | Method of programming a monolithic three-dimensional memory |
| KR100645055B1 (ko) * | 2004-10-28 | 2006-11-10 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 프로그램 방법 |
| US7298665B2 (en) * | 2004-12-30 | 2007-11-20 | Sandisk 3D Llc | Dual-mode decoder circuit, integrated circuit memory array incorporating same, and related methods of operation |
| US7177191B2 (en) * | 2004-12-30 | 2007-02-13 | Sandisk 3D Llc | Integrated circuit including memory array incorporating multiple types of NAND string structures |
| US7286439B2 (en) * | 2004-12-30 | 2007-10-23 | Sandisk 3D Llc | Apparatus and method for hierarchical decoding of dense memory arrays using multiple levels of multiple-headed decoders |
| US7054219B1 (en) | 2005-03-31 | 2006-05-30 | Matrix Semiconductor, Inc. | Transistor layout configuration for tight-pitched memory array lines |
| US7272052B2 (en) * | 2005-03-31 | 2007-09-18 | Sandisk 3D Llc | Decoding circuit for non-binary groups of memory line drivers |
| US7359279B2 (en) * | 2005-03-31 | 2008-04-15 | Sandisk 3D Llc | Integrated circuit memory array configuration including decoding compatibility with partial implementation of multiple memory layers |
| US7142471B2 (en) * | 2005-03-31 | 2006-11-28 | Sandisk 3D Llc | Method and apparatus for incorporating block redundancy in a memory array |
| US7170783B2 (en) * | 2005-04-01 | 2007-01-30 | Micron Technology, Inc. | Layout for NAND flash memory array having reduced word line impedance |
| EP1750273B1 (en) * | 2005-08-05 | 2011-12-07 | Infineon Technologies AG | Memory cell with increased access reliability |
| US7684781B2 (en) * | 2005-11-25 | 2010-03-23 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device |
| US7912439B2 (en) * | 2005-11-25 | 2011-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and operating method thereof |
| US20080237694A1 (en) * | 2007-03-27 | 2008-10-02 | Michael Specht | Integrated circuit, cell, cell arrangement, method for manufacturing an integrated circuit, method for manufacturing a cell, memory module |
| US7638836B2 (en) * | 2007-05-15 | 2009-12-29 | Schiltron Corporation | Nonvolatile memory with backplate |
| KR100909968B1 (ko) * | 2007-06-12 | 2009-07-29 | 삼성전자주식회사 | 구동방식을 개선한 입체 구조의 플래시 메모리 장치 및 그구동방법 |
| KR100953046B1 (ko) * | 2007-12-27 | 2010-04-14 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자의 동작 방법 |
| KR101422702B1 (ko) | 2007-12-28 | 2014-07-25 | 삼성전자주식회사 | 3차원 메모리 장치 및 그것의 프로그램 방법 |
| US7916544B2 (en) * | 2008-01-25 | 2011-03-29 | Micron Technology, Inc. | Random telegraph signal noise reduction scheme for semiconductor memories |
| US8458114B2 (en) * | 2009-03-02 | 2013-06-04 | Analog Devices, Inc. | Analog computation using numerical representations with uncertainty |
| US8179731B2 (en) * | 2009-03-27 | 2012-05-15 | Analog Devices, Inc. | Storage devices with soft processing |
| US8199576B2 (en) * | 2009-04-08 | 2012-06-12 | Sandisk 3D Llc | Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture |
| US7983065B2 (en) * | 2009-04-08 | 2011-07-19 | Sandisk 3D Llc | Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines |
| US8351236B2 (en) * | 2009-04-08 | 2013-01-08 | Sandisk 3D Llc | Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture |
| JP2011040706A (ja) * | 2009-07-15 | 2011-02-24 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP2011076678A (ja) * | 2009-09-30 | 2011-04-14 | Toshiba Corp | 不揮発性半導体記憶装置 |
| CN107293322B (zh) * | 2010-02-07 | 2021-09-21 | 芝诺半导体有限公司 | 含导通浮体晶体管、并具有永久性和非永久性功能的半导体存储元件及操作方法 |
| US9378831B2 (en) | 2010-02-09 | 2016-06-28 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
| KR101658479B1 (ko) | 2010-02-09 | 2016-09-21 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
| KR101691088B1 (ko) | 2010-02-17 | 2016-12-29 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
| KR101691092B1 (ko) | 2010-08-26 | 2016-12-30 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
| US9324440B2 (en) | 2010-02-09 | 2016-04-26 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
| US8923060B2 (en) | 2010-02-17 | 2014-12-30 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices and operating methods thereof |
| US8908431B2 (en) | 2010-02-17 | 2014-12-09 | Samsung Electronics Co., Ltd. | Control method of nonvolatile memory device |
| JP5788183B2 (ja) | 2010-02-17 | 2015-09-30 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 不揮発性メモリ装置、それの動作方法、そしてそれを含むメモリシステム |
| JP2011170956A (ja) | 2010-02-18 | 2011-09-01 | Samsung Electronics Co Ltd | 不揮発性メモリ装置およびそのプログラム方法と、それを含むメモリシステム |
| US8553466B2 (en) | 2010-03-04 | 2013-10-08 | Samsung Electronics Co., Ltd. | Non-volatile memory device, erasing method thereof, and memory system including the same |
| US8526237B2 (en) | 2010-06-08 | 2013-09-03 | Sandisk 3D Llc | Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof |
| US8547720B2 (en) | 2010-06-08 | 2013-10-01 | Sandisk 3D Llc | Non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word lines |
| US20120327714A1 (en) * | 2011-06-23 | 2012-12-27 | Macronix International Co., Ltd. | Memory Architecture of 3D Array With Diode in Memory String |
| US8797806B2 (en) * | 2011-08-15 | 2014-08-05 | Micron Technology, Inc. | Apparatus and methods including source gates |
| CN104067348B (zh) * | 2012-01-24 | 2017-04-05 | 苹果公司 | 用于模拟存储器单元的编程及擦除方案 |
| US10541029B2 (en) | 2012-08-01 | 2020-01-21 | Micron Technology, Inc. | Partial block memory operations |
| US8921891B2 (en) | 2012-08-22 | 2014-12-30 | Micron Technology, Inc. | Vertical memory cell string with dielectric in a portion of the body |
| US9589644B2 (en) * | 2012-10-08 | 2017-03-07 | Micron Technology, Inc. | Reducing programming disturbance in memory devices |
| KR102242022B1 (ko) | 2013-09-16 | 2021-04-21 | 삼성전자주식회사 | 불휘발성 메모리 및 그것의 프로그램 방법 |
| KR20150049908A (ko) * | 2013-10-31 | 2015-05-08 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그것의 소거 방법 |
| US9379163B1 (en) | 2015-03-06 | 2016-06-28 | Kabushiki Kaisha Toshiba | Variable resistance memory device |
| US10157680B2 (en) * | 2015-12-22 | 2018-12-18 | Sandisk Technologies Llp | Sub-block mode for non-volatile memory |
| US10438025B2 (en) * | 2016-10-04 | 2019-10-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self-destruct SRAM-based authentication circuit |
| KR102620813B1 (ko) * | 2017-01-03 | 2024-01-04 | 에스케이하이닉스 주식회사 | 반도체 장치, 그 동작 방법 및 메모리 시스템 |
| CN110473579B (zh) * | 2019-07-11 | 2021-07-13 | 中国科学院微电子研究所 | 三维阻变存储阵列、译码电路以及存储系统 |
| EP3832721A1 (en) | 2019-12-06 | 2021-06-09 | Imec VZW | A method for fabricating a 3d ferroelectric memory |
| CN111312312B (zh) * | 2020-02-19 | 2021-10-15 | 无锡中微亿芯有限公司 | 一种用于p_flash型可编程逻辑器件的配置控制电路 |
| CN113196402B (zh) | 2020-03-23 | 2022-11-04 | 长江存储科技有限责任公司 | 存储器件及其编程操作 |
| CN111527544B (zh) * | 2020-03-23 | 2021-04-16 | 长江存储科技有限责任公司 | 3d nand闪存的操作方法和3d nand闪存 |
| US11177280B1 (en) | 2020-05-18 | 2021-11-16 | Sandisk Technologies Llc | Three-dimensional memory device including wrap around word lines and methods of forming the same |
| US11393832B2 (en) * | 2020-07-15 | 2022-07-19 | Ferroelectric Memory Gmbh | Memory cell arrangement |
| WO2022153366A1 (ja) * | 2021-01-12 | 2022-07-21 | Tdk株式会社 | 磁気アレイ、磁気アレイの制御方法及び磁気アレイの制御プログラム |
| CN113223596B (zh) * | 2021-05-25 | 2022-06-17 | 长江存储科技有限责任公司 | 一种三维非易失性存储器及其数据擦除验证方法 |
| KR102903150B1 (ko) * | 2022-07-21 | 2025-12-29 | 경북대학교 산학협력단 | 공핍모드 및 다중 문턱전압을 갖는 mosfet을 사용하는 3진 논리 회로 설계 방법 및 이를 수행하기 위한 장치 및 기록 매체 |
Family Cites Families (89)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4142176A (en) * | 1976-09-27 | 1979-02-27 | Mostek Corporation | Series read only memory structure |
| US4543594A (en) * | 1982-09-07 | 1985-09-24 | Intel Corporation | Fusible link employing capacitor structure |
| US4602354A (en) * | 1983-01-10 | 1986-07-22 | Ncr Corporation | X-and-OR memory array |
| US4646266A (en) * | 1984-09-28 | 1987-02-24 | Energy Conversion Devices, Inc. | Programmable semiconductor structures and methods for using the same |
| US4868616A (en) * | 1986-12-11 | 1989-09-19 | Energy Conversion Devices, Inc. | Amorphous electronic matrix array for liquid crystal display |
| USRE35838E (en) * | 1987-12-28 | 1998-07-07 | Kabushiki Kaisha Toshiba | Electrically erasable programmable read-only memory with NAND cell structure |
| JP2718716B2 (ja) * | 1988-09-30 | 1998-02-25 | 株式会社東芝 | 不揮発性半導体メモリ装置およびそのデータ書替え方法 |
| JP2586187B2 (ja) * | 1990-07-16 | 1997-02-26 | 日本電気株式会社 | 半導体記憶装置 |
| US5197027A (en) * | 1991-01-24 | 1993-03-23 | Nexcom Technology, Inc. | Single transistor eeprom architecture |
| JP3109537B2 (ja) * | 1991-07-12 | 2000-11-20 | 日本電気株式会社 | 読み出し専用半導体記憶装置 |
| KR940008204B1 (ko) * | 1991-08-14 | 1994-09-08 | 삼성전자 주식회사 | 낸드형 플래쉬 메모리의 과도소거 방지장치 및 방법 |
| US5412493A (en) * | 1992-09-25 | 1995-05-02 | Sony Corporation | Liquid crystal display device having LDD structure type thin film transistors connected in series |
| US5644533A (en) * | 1992-11-02 | 1997-07-01 | Nvx Corporation | Flash memory system, and methods of constructing and utilizing same |
| KR960000616B1 (ko) * | 1993-01-13 | 1996-01-10 | 삼성전자주식회사 | 불휘발성 반도체 메모리 장치 |
| JP3207592B2 (ja) * | 1993-03-19 | 2001-09-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| US5555204A (en) * | 1993-06-29 | 1996-09-10 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device |
| JP3192861B2 (ja) * | 1994-03-14 | 2001-07-30 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| DE19523775C2 (de) * | 1994-06-29 | 2001-12-06 | Toshiba Kawasaki Kk | Nichtflüchtige Halbleiterspeichervorrichtung |
| GB9424598D0 (en) * | 1994-12-06 | 1995-01-25 | Philips Electronics Uk Ltd | Semiconductor memory with non-volatile memory transistor |
| US5703382A (en) * | 1995-11-20 | 1997-12-30 | Xerox Corporation | Array having multiple channel structures with continuously doped interchannel regions |
| US5514907A (en) * | 1995-03-21 | 1996-05-07 | Simple Technology Incorporated | Apparatus for stacking semiconductor chips |
| US5751012A (en) * | 1995-06-07 | 1998-05-12 | Micron Technology, Inc. | Polysilicon pillar diode for use in a non-volatile memory cell |
| AU7475196A (en) * | 1995-10-25 | 1997-05-15 | Nvx Corporation | Semiconductor non-volatile memory device having a nand cell structure |
| KR100253868B1 (ko) * | 1995-11-13 | 2000-05-01 | 니시무로 타이죠 | 불휘발성 반도체기억장치 |
| US5814853A (en) * | 1996-01-22 | 1998-09-29 | Advanced Micro Devices, Inc. | Sourceless floating gate memory device and method of storing data |
| WO1997047041A2 (en) * | 1996-06-05 | 1997-12-11 | Philips Electronics N.V. | Programmable, non-volatile memory device, and method of manufacturing such a device |
| KR100210846B1 (ko) * | 1996-06-07 | 1999-07-15 | 구본준 | 낸드셀 어레이 |
| US5912489A (en) * | 1996-06-18 | 1999-06-15 | Advanced Micro Devices, Inc. | Dual source side polysilicon select gate structure utilizing single tunnel oxide for NAND array flash memory |
| US5715194A (en) * | 1996-07-24 | 1998-02-03 | Advanced Micro Devices, Inc. | Bias scheme of program inhibit for random programming in a nand flash memory |
| TW338165B (en) * | 1996-09-09 | 1998-08-11 | Sony Co Ltd | Semiconductor nand type flash memory with incremental step pulse programming |
| KR100206709B1 (ko) * | 1996-09-21 | 1999-07-01 | 윤종용 | 멀티비트 불휘발성 반도체 메모리의 셀 어레이의 구조 및 그의 구동방법 |
| US5835396A (en) * | 1996-10-17 | 1998-11-10 | Zhang; Guobiao | Three-dimensional read-only memory |
| JPH10223866A (ja) * | 1997-02-03 | 1998-08-21 | Toshiba Corp | 半導体記憶装置 |
| KR100272037B1 (ko) * | 1997-02-27 | 2000-12-01 | 니시무로 타이죠 | 불휘발성 반도체 기억 장치 |
| JP3489958B2 (ja) * | 1997-03-19 | 2004-01-26 | 富士通株式会社 | 不揮発性半導体記憶装置 |
| NO972803D0 (no) * | 1997-06-17 | 1997-06-17 | Opticom As | Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte |
| KR19990029775A (ko) * | 1997-09-11 | 1999-04-26 | 오카모토 세이시 | 불휘발성 반도체 기억 장치 |
| US6005270A (en) * | 1997-11-10 | 1999-12-21 | Sony Corporation | Semiconductor nonvolatile memory device and method of production of same |
| JP3959165B2 (ja) * | 1997-11-27 | 2007-08-15 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| KR100297602B1 (ko) * | 1997-12-31 | 2001-08-07 | 윤종용 | 비휘발성메모리장치의프로그램방법 |
| JP3999900B2 (ja) * | 1998-09-10 | 2007-10-31 | 株式会社東芝 | 不揮発性半導体メモリ |
| US5991202A (en) * | 1998-09-24 | 1999-11-23 | Advanced Micro Devices, Inc. | Method for reducing program disturb during self-boosting in a NAND flash memory |
| US6034882A (en) * | 1998-11-16 | 2000-03-07 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
| JP3866460B2 (ja) * | 1998-11-26 | 2007-01-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| US6411548B1 (en) * | 1999-07-13 | 2002-06-25 | Kabushiki Kaisha Toshiba | Semiconductor memory having transistors connected in series |
| JP2001028427A (ja) * | 1999-07-14 | 2001-01-30 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
| JP3863330B2 (ja) * | 1999-09-28 | 2006-12-27 | 株式会社東芝 | 不揮発性半導体メモリ |
| JP4899241B2 (ja) * | 1999-12-06 | 2012-03-21 | ソニー株式会社 | 不揮発性半導体記憶装置およびその動作方法 |
| US6888750B2 (en) * | 2000-04-28 | 2005-05-03 | Matrix Semiconductor, Inc. | Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication |
| US6856572B2 (en) * | 2000-04-28 | 2005-02-15 | Matrix Semiconductor, Inc. | Multi-headed decoder structure utilizing memory array line driver with dual purpose driver device |
| US6567287B2 (en) * | 2001-03-21 | 2003-05-20 | Matrix Semiconductor, Inc. | Memory device with row and column decoder circuits arranged in a checkerboard pattern under a plurality of memory arrays |
| US6420215B1 (en) * | 2000-04-28 | 2002-07-16 | Matrix Semiconductor, Inc. | Three-dimensional memory array and method of fabrication |
| JP4002712B2 (ja) * | 2000-05-15 | 2007-11-07 | スパンション エルエルシー | 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ保持方法 |
| JP3810985B2 (ja) * | 2000-05-22 | 2006-08-16 | 株式会社東芝 | 不揮発性半導体メモリ |
| JP4477199B2 (ja) * | 2000-06-16 | 2010-06-09 | 株式会社ルネサステクノロジ | 磁気ランダムアクセスメモリ、磁気ランダムアクセスメモリへのアクセス方法および磁気ランダムアクセスメモリの製造方法 |
| JP3672803B2 (ja) * | 2000-07-28 | 2005-07-20 | Necエレクトロニクス株式会社 | 不揮発性記憶装置 |
| JP5792918B2 (ja) * | 2000-08-14 | 2015-10-14 | サンディスク・スリー・ディ・リミテッド・ライアビリティ・カンパニーSandisk 3D Llc | 高集積メモリデバイス |
| US6515888B2 (en) * | 2000-08-14 | 2003-02-04 | Matrix Semiconductor, Inc. | Low cost three-dimensional memory array |
| US6335890B1 (en) * | 2000-11-01 | 2002-01-01 | International Business Machines Corporation | Segmented write line architecture for writing magnetic random access memories |
| JP3730508B2 (ja) * | 2000-11-13 | 2006-01-05 | 株式会社東芝 | 半導体記憶装置およびその動作方法 |
| KR100385226B1 (ko) * | 2000-11-22 | 2003-05-27 | 삼성전자주식회사 | 프로그램 디스터브를 방지할 수 있는 플래시 메모리 장치및 그것을 프로그램하는 방법 |
| US6326269B1 (en) * | 2000-12-08 | 2001-12-04 | Macronix International Co., Ltd. | Method of fabricating self-aligned multilevel mask ROM |
| KR100385230B1 (ko) * | 2000-12-28 | 2003-05-27 | 삼성전자주식회사 | 불휘발성 반도체 메모리 장치의 프로그램 방법 |
| US6611453B2 (en) * | 2001-01-24 | 2003-08-26 | Infineon Technologies Ag | Self-aligned cross-point MRAM device with aluminum metallization layers |
| US6490194B2 (en) * | 2001-01-24 | 2002-12-03 | Infineon Technologies Ag | Serial MRAM device |
| US6512694B2 (en) * | 2001-03-16 | 2003-01-28 | Simtek Corporation | NAND stack EEPROM with random programming capability |
| US6545898B1 (en) * | 2001-03-21 | 2003-04-08 | Silicon Valley Bank | Method and apparatus for writing memory arrays using external source of high programming voltage |
| JP3829088B2 (ja) * | 2001-03-29 | 2006-10-04 | 株式会社東芝 | 半導体記憶装置 |
| JP4796238B2 (ja) * | 2001-04-27 | 2011-10-19 | Okiセミコンダクタ株式会社 | ワード線駆動回路 |
| US6671204B2 (en) * | 2001-07-23 | 2003-12-30 | Samsung Electronics Co., Ltd. | Nonvolatile memory device with page buffer having dual registers and methods of using the same |
| US6597609B2 (en) * | 2001-08-30 | 2003-07-22 | Micron Technology, Inc. | Non-volatile memory with test rows for disturb detection |
| US6473328B1 (en) * | 2001-08-30 | 2002-10-29 | Micron Technology, Inc. | Three-dimensional magnetic memory array with a minimal number of access conductors therein |
| US6456528B1 (en) * | 2001-09-17 | 2002-09-24 | Sandisk Corporation | Selective operation of a multi-state non-volatile memory system in a binary mode |
| US6925007B2 (en) * | 2001-10-31 | 2005-08-02 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
| US6542407B1 (en) * | 2002-01-18 | 2003-04-01 | Sandisk Corporation | Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells |
| US6498747B1 (en) * | 2002-02-08 | 2002-12-24 | Infineon Technologies Ag | Magnetoresistive random access memory (MRAM) cross-point array with reduced parasitic effects |
| US20030155582A1 (en) * | 2002-02-19 | 2003-08-21 | Maitreyee Mahajani | Gate dielectric structures for integrated circuits and methods for making and using such gate dielectric structures |
| US6853587B2 (en) * | 2002-06-21 | 2005-02-08 | Micron Technology, Inc. | Vertical NROM having a storage density of 1 bit per 1F2 |
| US6859410B2 (en) * | 2002-11-27 | 2005-02-22 | Matrix Semiconductor, Inc. | Tree decoder structure particularly well-suited to interfacing array lines having extremely small layout pitch |
| JP3863485B2 (ja) * | 2002-11-29 | 2006-12-27 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| US6849905B2 (en) * | 2002-12-23 | 2005-02-01 | Matrix Semiconductor, Inc. | Semiconductor device with localized charge storage dielectric and method of making same |
| US7505321B2 (en) * | 2002-12-31 | 2009-03-17 | Sandisk 3D Llc | Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same |
| US7233522B2 (en) * | 2002-12-31 | 2007-06-19 | Sandisk 3D Llc | NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same |
| US6960794B2 (en) * | 2002-12-31 | 2005-11-01 | Matrix Semiconductor, Inc. | Formation of thin channels for TFT devices to ensure low variability of threshold voltages |
| US7005350B2 (en) * | 2002-12-31 | 2006-02-28 | Matrix Semiconductor, Inc. | Method for fabricating programmable memory array structures incorporating series-connected transistor strings |
| JP2004241558A (ja) * | 2003-02-05 | 2004-08-26 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法、半導体集積回路及び不揮発性半導体記憶装置システム |
| US6822903B2 (en) * | 2003-03-31 | 2004-11-23 | Matrix Semiconductor, Inc. | Apparatus and method for disturb-free programming of passive element memory cells |
| US6977842B2 (en) * | 2003-09-16 | 2005-12-20 | Micron Technology, Inc. | Boosted substrate/tub programming for flash memories |
| US7423304B2 (en) * | 2003-12-05 | 2008-09-09 | Sandisck 3D Llc | Optimization of critical dimensions and pitch of patterned features in and above a substrate |
-
2003
- 2003-12-05 US US10/729,865 patent/US20050128807A1/en not_active Abandoned
-
2004
- 2004-12-02 KR KR1020067013554A patent/KR20070003818A/ko not_active Withdrawn
- 2004-12-02 WO PCT/US2004/040283 patent/WO2005057586A2/en not_active Ceased
- 2004-12-02 EP EP04812730A patent/EP1695356A2/en not_active Withdrawn
- 2004-12-02 CN CNA2004800408960A patent/CN1906700A/zh active Pending
- 2004-12-02 JP JP2006542728A patent/JP2007513455A/ja not_active Withdrawn
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