JP2008527585A5 - - Google Patents
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- JP2008527585A5 JP2008527585A5 JP2007549434A JP2007549434A JP2008527585A5 JP 2008527585 A5 JP2008527585 A5 JP 2008527585A5 JP 2007549434 A JP2007549434 A JP 2007549434A JP 2007549434 A JP2007549434 A JP 2007549434A JP 2008527585 A5 JP2008527585 A5 JP 2008527585A5
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- circuit
- integrated circuit
- bias
- coupled
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- 230000008878 coupling Effects 0.000 claims 9
- 238000010168 coupling process Methods 0.000 claims 9
- 238000005859 coupling reaction Methods 0.000 claims 9
- 238000003491 array Methods 0.000 claims 1
- 230000010354 integration Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/026,470 | 2004-12-30 | ||
| US11/026,470 US7286439B2 (en) | 2004-12-30 | 2004-12-30 | Apparatus and method for hierarchical decoding of dense memory arrays using multiple levels of multiple-headed decoders |
| PCT/US2005/045564 WO2006073735A1 (en) | 2004-12-30 | 2005-12-16 | Apparatus and method for hierarchical decoding of dense memory arrays using multiple levels of multiple-headed decoders |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008527585A JP2008527585A (ja) | 2008-07-24 |
| JP2008527585A5 true JP2008527585A5 (enExample) | 2009-02-12 |
| JP5032336B2 JP5032336B2 (ja) | 2012-09-26 |
Family
ID=36640233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007549434A Expired - Fee Related JP5032336B2 (ja) | 2004-12-30 | 2005-12-16 | 複数ヘッドデコーダの複数のレベルを使用した高密度メモリアレイの階層復号化のための機器および方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7286439B2 (enExample) |
| EP (2) | EP2450902B1 (enExample) |
| JP (1) | JP5032336B2 (enExample) |
| KR (1) | KR101194353B1 (enExample) |
| CN (2) | CN101138047B (enExample) |
| WO (1) | WO2006073735A1 (enExample) |
Families Citing this family (69)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7177191B2 (en) * | 2004-12-30 | 2007-02-13 | Sandisk 3D Llc | Integrated circuit including memory array incorporating multiple types of NAND string structures |
| US7298665B2 (en) * | 2004-12-30 | 2007-11-20 | Sandisk 3D Llc | Dual-mode decoder circuit, integrated circuit memory array incorporating same, and related methods of operation |
| US7286439B2 (en) * | 2004-12-30 | 2007-10-23 | Sandisk 3D Llc | Apparatus and method for hierarchical decoding of dense memory arrays using multiple levels of multiple-headed decoders |
| US7272052B2 (en) * | 2005-03-31 | 2007-09-18 | Sandisk 3D Llc | Decoding circuit for non-binary groups of memory line drivers |
| US7345907B2 (en) * | 2005-07-11 | 2008-03-18 | Sandisk 3D Llc | Apparatus and method for reading an array of nonvolatile memory cells including switchable resistor memory elements |
| US7362604B2 (en) * | 2005-07-11 | 2008-04-22 | Sandisk 3D Llc | Apparatus and method for programming an array of nonvolatile memory cells including switchable resistor memory elements |
| KR100855861B1 (ko) * | 2005-12-30 | 2008-09-01 | 주식회사 하이닉스반도체 | 비휘발성 반도체 메모리 장치 |
| JP2007213732A (ja) * | 2006-02-13 | 2007-08-23 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
| EP2062262B1 (en) * | 2006-07-31 | 2014-05-07 | Sandisk 3D LLC | Method and apparatus for passive element memory array incorporating reversible polarity word line and bit line decoders |
| US7463546B2 (en) * | 2006-07-31 | 2008-12-09 | Sandisk 3D Llc | Method for using a passive element memory array incorporating reversible polarity word line and bit line decoders |
| US8279704B2 (en) | 2006-07-31 | 2012-10-02 | Sandisk 3D Llc | Decoder circuitry providing forward and reverse modes of memory array operation and method for biasing same |
| US7570523B2 (en) * | 2006-07-31 | 2009-08-04 | Sandisk 3D Llc | Method for using two data busses for memory array block selection |
| US7554832B2 (en) * | 2006-07-31 | 2009-06-30 | Sandisk 3D Llc | Passive element memory array incorporating reversible polarity word line and bit line decoders |
| US7542338B2 (en) * | 2006-07-31 | 2009-06-02 | Sandisk 3D Llc | Method for reading a multi-level passive element memory cell array |
| US7499366B2 (en) * | 2006-07-31 | 2009-03-03 | Sandisk 3D Llc | Method for using dual data-dependent busses for coupling read/write circuits to a memory array |
| US7542337B2 (en) * | 2006-07-31 | 2009-06-02 | Sandisk 3D Llc | Apparatus for reading a multi-level passive element memory cell array |
| US7463536B2 (en) * | 2006-07-31 | 2008-12-09 | Sandisk 3D Llc | Memory array incorporating two data busses for memory array block selection |
| ATE556411T1 (de) * | 2006-07-31 | 2012-05-15 | Sandisk 3D Llc | Verfahren und vorrichtung für duale datenabhängige bussysteme zur kopplung von lese/schreib-schaltungen an einen speicher |
| US7486587B2 (en) * | 2006-07-31 | 2009-02-03 | Sandisk 3D Llc | Dual data-dependent busses for coupling read/write circuits to a memory array |
| US7633828B2 (en) * | 2006-07-31 | 2009-12-15 | Sandisk 3D Llc | Hierarchical bit line bias bus for block selectable memory array |
| US7596050B2 (en) * | 2006-07-31 | 2009-09-29 | Sandisk 3D Llc | Method for using a hierarchical bit line bias bus for block selectable memory array |
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| US7542370B2 (en) * | 2006-12-31 | 2009-06-02 | Sandisk 3D Llc | Reversible polarity decoder circuit |
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| US7558140B2 (en) * | 2007-03-31 | 2009-07-07 | Sandisk 3D Llc | Method for using a spatially distributed amplifier circuit |
| US7554406B2 (en) | 2007-03-31 | 2009-06-30 | Sandisk 3D Llc | Spatially distributed amplifier circuit |
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| KR101526317B1 (ko) * | 2008-05-09 | 2015-06-11 | 삼성전자주식회사 | 계층적 디코딩 장치 |
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| US8233309B2 (en) * | 2009-10-26 | 2012-07-31 | Sandisk 3D Llc | Non-volatile memory array architecture incorporating 1T-1R near 4F2 memory cell |
| US8223525B2 (en) | 2009-12-15 | 2012-07-17 | Sandisk 3D Llc | Page register outside array and sense amplifier interface |
| US8213243B2 (en) | 2009-12-15 | 2012-07-03 | Sandisk 3D Llc | Program cycle skip |
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| US9053766B2 (en) | 2011-03-03 | 2015-06-09 | Sandisk 3D, Llc | Three dimensional memory system with intelligent select circuit |
| US8374051B2 (en) | 2011-03-03 | 2013-02-12 | Sandisk 3D Llc | Three dimensional memory system with column pipeline |
| US8553476B2 (en) | 2011-03-03 | 2013-10-08 | Sandisk 3D Llc | Three dimensional memory system with page of data across word lines |
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| US8891305B2 (en) | 2012-08-21 | 2014-11-18 | Micron Technology, Inc. | Apparatuses and methods involving accessing distributed sub-blocks of memory cells |
| US8902670B2 (en) | 2012-08-31 | 2014-12-02 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
| US9025391B2 (en) * | 2012-11-27 | 2015-05-05 | Infineon Technologies Ag | Circuit arrangement and method for operating a circuit arrangement |
| US9001584B2 (en) | 2013-02-28 | 2015-04-07 | Micron Technology, Inc. | Sub-block decoding in 3D memory |
| US8947944B2 (en) | 2013-03-15 | 2015-02-03 | Sandisk 3D Llc | Program cycle skip evaluation before write operations in non-volatile memory |
| US8947972B2 (en) | 2013-03-15 | 2015-02-03 | Sandisk 3D Llc | Dynamic address grouping for parallel programming in non-volatile memory |
| US9711225B2 (en) | 2013-10-16 | 2017-07-18 | Sandisk Technologies Llc | Regrouping and skipping cycles in non-volatile memory |
| US9564215B2 (en) | 2015-02-11 | 2017-02-07 | Sandisk Technologies Llc | Independent sense amplifier addressing and quota sharing in non-volatile memory |
| US9542979B1 (en) * | 2015-08-25 | 2017-01-10 | Macronix International Co., Ltd. | Memory structure |
| ITUB20153728A1 (it) * | 2015-09-18 | 2017-03-18 | St Microelectronics Srl | Decodificatore di riga per un dispositivo di memoria non volatile, avente ridotta occupazione di area |
| US9721663B1 (en) * | 2016-02-18 | 2017-08-01 | Sandisk Technologies Llc | Word line decoder circuitry under a three-dimensional memory array |
| JP2018045750A (ja) | 2016-09-16 | 2018-03-22 | 東芝メモリ株式会社 | 半導体記憶装置 |
| KR102398205B1 (ko) | 2017-06-12 | 2022-05-16 | 삼성전자주식회사 | 오티피 메모리 셀을 포함하는 메모리 장치 및 그것의 프로그램 방법 |
| CN108962309B (zh) * | 2018-06-29 | 2021-12-28 | 西安交通大学 | 一种高能量利用率低功耗的堆叠sram阵列结构 |
| US10755768B2 (en) * | 2018-07-16 | 2020-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device including distributed write driving arrangement and method of operating same |
| US10861551B2 (en) | 2018-12-28 | 2020-12-08 | Micron Technology, Inc. | Memory cells configured to generate weighted inputs for neural networks |
| JP7453212B2 (ja) * | 2019-03-26 | 2024-03-19 | パナソニック インテレクチュアル プロパティ コーポレーション オブ アメリカ | 三次元データ符号化方法、三次元データ復号方法、三次元データ符号化装置、及び三次元データ復号装置 |
| US11423979B2 (en) * | 2019-04-29 | 2022-08-23 | Silicon Storage Technology, Inc. | Decoding system and physical layout for analog neural memory in deep learning artificial neural network |
| US10818731B1 (en) * | 2019-06-19 | 2020-10-27 | Avalanche Technology, Inc. | Three-dimensional nonvolatile memory |
| KR102676269B1 (ko) * | 2019-09-26 | 2024-06-19 | 에스케이하이닉스 주식회사 | 반도체 장치 |
| US11139023B1 (en) | 2020-03-19 | 2021-10-05 | Micron Technologhy, Inc. | Memory operation with double-sided asymmetric decoders |
| CN113270130B (zh) * | 2020-05-29 | 2024-08-09 | 台湾积体电路制造股份有限公司 | 存储器设备 |
| CN113411103B (zh) * | 2021-05-26 | 2022-04-22 | 盛销邦(广州)物联科技有限公司 | 一种基于rf电子标签的密集读写解码器 |
| KR20250083401A (ko) * | 2023-11-28 | 2025-06-10 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 메모리 디바이스, 메모리 시스템, 및 디코딩 회로 |
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-
2004
- 2004-12-30 US US11/026,470 patent/US7286439B2/en not_active Expired - Fee Related
-
2005
- 2005-12-16 EP EP11184470.0A patent/EP2450902B1/en not_active Expired - Lifetime
- 2005-12-16 CN CN2005800451715A patent/CN101138047B/zh not_active Expired - Fee Related
- 2005-12-16 JP JP2007549434A patent/JP5032336B2/ja not_active Expired - Fee Related
- 2005-12-16 EP EP05854312.5A patent/EP1831891B1/en not_active Expired - Lifetime
- 2005-12-16 KR KR1020077016213A patent/KR101194353B1/ko not_active Expired - Fee Related
- 2005-12-16 CN CN2011100734317A patent/CN102201254B/zh not_active Expired - Fee Related
- 2005-12-16 WO PCT/US2005/045564 patent/WO2006073735A1/en not_active Ceased
-
2007
- 2007-10-22 US US11/876,563 patent/US7633829B2/en not_active Expired - Lifetime
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