JP5032336B2 - 複数ヘッドデコーダの複数のレベルを使用した高密度メモリアレイの階層復号化のための機器および方法 - Google Patents
複数ヘッドデコーダの複数のレベルを使用した高密度メモリアレイの階層復号化のための機器および方法 Download PDFInfo
- Publication number
- JP5032336B2 JP5032336B2 JP2007549434A JP2007549434A JP5032336B2 JP 5032336 B2 JP5032336 B2 JP 5032336B2 JP 2007549434 A JP2007549434 A JP 2007549434A JP 2007549434 A JP2007549434 A JP 2007549434A JP 5032336 B2 JP5032336 B2 JP 5032336B2
- Authority
- JP
- Japan
- Prior art keywords
- level
- bias
- circuit
- circuits
- decoder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 38
- 238000003491 array Methods 0.000 title claims description 32
- 230000008878 coupling Effects 0.000 claims description 17
- 238000010168 coupling process Methods 0.000 claims description 17
- 238000005859 coupling reaction Methods 0.000 claims description 17
- 238000007667 floating Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims 3
- 230000010354 integration Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000011295 pitch Substances 0.000 description 13
- 230000000295 complement effect Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 101100409457 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CDC40 gene Proteins 0.000 description 3
- 101100156959 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) XRS2 gene Proteins 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000008520 organization Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 101100429092 Coffea arabica XMT1 gene Proteins 0.000 description 1
- 230000003542 behavioural effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- PWPJGUXAGUPAHP-UHFFFAOYSA-N lufenuron Chemical compound C1=C(Cl)C(OC(F)(F)C(C(F)(F)F)F)=CC(Cl)=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F PWPJGUXAGUPAHP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/026,470 | 2004-12-30 | ||
| US11/026,470 US7286439B2 (en) | 2004-12-30 | 2004-12-30 | Apparatus and method for hierarchical decoding of dense memory arrays using multiple levels of multiple-headed decoders |
| PCT/US2005/045564 WO2006073735A1 (en) | 2004-12-30 | 2005-12-16 | Apparatus and method for hierarchical decoding of dense memory arrays using multiple levels of multiple-headed decoders |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008527585A JP2008527585A (ja) | 2008-07-24 |
| JP2008527585A5 JP2008527585A5 (enExample) | 2009-02-12 |
| JP5032336B2 true JP5032336B2 (ja) | 2012-09-26 |
Family
ID=36640233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007549434A Expired - Fee Related JP5032336B2 (ja) | 2004-12-30 | 2005-12-16 | 複数ヘッドデコーダの複数のレベルを使用した高密度メモリアレイの階層復号化のための機器および方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7286439B2 (enExample) |
| EP (2) | EP2450902B1 (enExample) |
| JP (1) | JP5032336B2 (enExample) |
| KR (1) | KR101194353B1 (enExample) |
| CN (2) | CN101138047B (enExample) |
| WO (1) | WO2006073735A1 (enExample) |
Families Citing this family (69)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7177191B2 (en) * | 2004-12-30 | 2007-02-13 | Sandisk 3D Llc | Integrated circuit including memory array incorporating multiple types of NAND string structures |
| US7298665B2 (en) * | 2004-12-30 | 2007-11-20 | Sandisk 3D Llc | Dual-mode decoder circuit, integrated circuit memory array incorporating same, and related methods of operation |
| US7286439B2 (en) * | 2004-12-30 | 2007-10-23 | Sandisk 3D Llc | Apparatus and method for hierarchical decoding of dense memory arrays using multiple levels of multiple-headed decoders |
| US7272052B2 (en) * | 2005-03-31 | 2007-09-18 | Sandisk 3D Llc | Decoding circuit for non-binary groups of memory line drivers |
| US7345907B2 (en) * | 2005-07-11 | 2008-03-18 | Sandisk 3D Llc | Apparatus and method for reading an array of nonvolatile memory cells including switchable resistor memory elements |
| US7362604B2 (en) * | 2005-07-11 | 2008-04-22 | Sandisk 3D Llc | Apparatus and method for programming an array of nonvolatile memory cells including switchable resistor memory elements |
| KR100855861B1 (ko) * | 2005-12-30 | 2008-09-01 | 주식회사 하이닉스반도체 | 비휘발성 반도체 메모리 장치 |
| JP2007213732A (ja) * | 2006-02-13 | 2007-08-23 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
| EP2062262B1 (en) * | 2006-07-31 | 2014-05-07 | Sandisk 3D LLC | Method and apparatus for passive element memory array incorporating reversible polarity word line and bit line decoders |
| US7463546B2 (en) * | 2006-07-31 | 2008-12-09 | Sandisk 3D Llc | Method for using a passive element memory array incorporating reversible polarity word line and bit line decoders |
| US8279704B2 (en) | 2006-07-31 | 2012-10-02 | Sandisk 3D Llc | Decoder circuitry providing forward and reverse modes of memory array operation and method for biasing same |
| US7570523B2 (en) * | 2006-07-31 | 2009-08-04 | Sandisk 3D Llc | Method for using two data busses for memory array block selection |
| US7554832B2 (en) * | 2006-07-31 | 2009-06-30 | Sandisk 3D Llc | Passive element memory array incorporating reversible polarity word line and bit line decoders |
| US7542338B2 (en) * | 2006-07-31 | 2009-06-02 | Sandisk 3D Llc | Method for reading a multi-level passive element memory cell array |
| US7499366B2 (en) * | 2006-07-31 | 2009-03-03 | Sandisk 3D Llc | Method for using dual data-dependent busses for coupling read/write circuits to a memory array |
| US7542337B2 (en) * | 2006-07-31 | 2009-06-02 | Sandisk 3D Llc | Apparatus for reading a multi-level passive element memory cell array |
| US7463536B2 (en) * | 2006-07-31 | 2008-12-09 | Sandisk 3D Llc | Memory array incorporating two data busses for memory array block selection |
| ATE556411T1 (de) * | 2006-07-31 | 2012-05-15 | Sandisk 3D Llc | Verfahren und vorrichtung für duale datenabhängige bussysteme zur kopplung von lese/schreib-schaltungen an einen speicher |
| US7486587B2 (en) * | 2006-07-31 | 2009-02-03 | Sandisk 3D Llc | Dual data-dependent busses for coupling read/write circuits to a memory array |
| US7633828B2 (en) * | 2006-07-31 | 2009-12-15 | Sandisk 3D Llc | Hierarchical bit line bias bus for block selectable memory array |
| US7596050B2 (en) * | 2006-07-31 | 2009-09-29 | Sandisk 3D Llc | Method for using a hierarchical bit line bias bus for block selectable memory array |
| US7447071B2 (en) * | 2006-11-08 | 2008-11-04 | Atmel Corporation | Low voltage column decoder sharing a memory array p-well |
| US7525869B2 (en) * | 2006-12-31 | 2009-04-28 | Sandisk 3D Llc | Method for using a reversible polarity decoder circuit |
| US7542370B2 (en) * | 2006-12-31 | 2009-06-02 | Sandisk 3D Llc | Reversible polarity decoder circuit |
| US7719919B2 (en) * | 2007-03-20 | 2010-05-18 | Kabushiki Kaisha Toshiba | Semiconductor memory device in which word lines are driven from either side of memory cell array |
| US7468916B2 (en) * | 2007-03-20 | 2008-12-23 | Ememory Technology Inc. | Non-volatile memory having a row driving circuit with shared level shift circuits |
| US7558140B2 (en) * | 2007-03-31 | 2009-07-07 | Sandisk 3D Llc | Method for using a spatially distributed amplifier circuit |
| US7554406B2 (en) | 2007-03-31 | 2009-06-30 | Sandisk 3D Llc | Spatially distributed amplifier circuit |
| US7869246B2 (en) * | 2007-05-25 | 2011-01-11 | Marvell World Trade Ltd. | Bit line decoder architecture for NOR-type memory array |
| KR100898667B1 (ko) * | 2007-08-06 | 2009-05-22 | 주식회사 하이닉스반도체 | 반도체 메모리 소자 |
| KR101526317B1 (ko) * | 2008-05-09 | 2015-06-11 | 삼성전자주식회사 | 계층적 디코딩 장치 |
| US8130528B2 (en) | 2008-08-25 | 2012-03-06 | Sandisk 3D Llc | Memory system with sectional data lines |
| US8027209B2 (en) | 2008-10-06 | 2011-09-27 | Sandisk 3D, Llc | Continuous programming of non-volatile memory |
| US8279650B2 (en) | 2009-04-20 | 2012-10-02 | Sandisk 3D Llc | Memory system with data line switching scheme |
| US8050109B2 (en) | 2009-08-10 | 2011-11-01 | Sandisk 3D Llc | Semiconductor memory with improved memory block switching |
| US8233309B2 (en) * | 2009-10-26 | 2012-07-31 | Sandisk 3D Llc | Non-volatile memory array architecture incorporating 1T-1R near 4F2 memory cell |
| US8223525B2 (en) | 2009-12-15 | 2012-07-17 | Sandisk 3D Llc | Page register outside array and sense amplifier interface |
| US8213243B2 (en) | 2009-12-15 | 2012-07-03 | Sandisk 3D Llc | Program cycle skip |
| US8284608B2 (en) * | 2010-10-05 | 2012-10-09 | Nxp B.V. | Combined EEPROM/flash non-volatile memory circuit |
| US9053766B2 (en) | 2011-03-03 | 2015-06-09 | Sandisk 3D, Llc | Three dimensional memory system with intelligent select circuit |
| US8374051B2 (en) | 2011-03-03 | 2013-02-12 | Sandisk 3D Llc | Three dimensional memory system with column pipeline |
| US8553476B2 (en) | 2011-03-03 | 2013-10-08 | Sandisk 3D Llc | Three dimensional memory system with page of data across word lines |
| US8730754B2 (en) * | 2011-04-12 | 2014-05-20 | Micron Technology, Inc. | Memory apparatus and system with shared wordline decoder |
| US8699293B2 (en) * | 2011-04-27 | 2014-04-15 | Sandisk 3D Llc | Non-volatile storage system with dual block programming |
| US8913443B2 (en) | 2011-09-19 | 2014-12-16 | Conversant Intellectual Property Management Inc. | Voltage regulation for 3D packages and method of manufacturing same |
| US8891305B2 (en) | 2012-08-21 | 2014-11-18 | Micron Technology, Inc. | Apparatuses and methods involving accessing distributed sub-blocks of memory cells |
| US8902670B2 (en) | 2012-08-31 | 2014-12-02 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
| US9025391B2 (en) * | 2012-11-27 | 2015-05-05 | Infineon Technologies Ag | Circuit arrangement and method for operating a circuit arrangement |
| US9001584B2 (en) | 2013-02-28 | 2015-04-07 | Micron Technology, Inc. | Sub-block decoding in 3D memory |
| US8947944B2 (en) | 2013-03-15 | 2015-02-03 | Sandisk 3D Llc | Program cycle skip evaluation before write operations in non-volatile memory |
| US8947972B2 (en) | 2013-03-15 | 2015-02-03 | Sandisk 3D Llc | Dynamic address grouping for parallel programming in non-volatile memory |
| US9711225B2 (en) | 2013-10-16 | 2017-07-18 | Sandisk Technologies Llc | Regrouping and skipping cycles in non-volatile memory |
| US9564215B2 (en) | 2015-02-11 | 2017-02-07 | Sandisk Technologies Llc | Independent sense amplifier addressing and quota sharing in non-volatile memory |
| US9542979B1 (en) * | 2015-08-25 | 2017-01-10 | Macronix International Co., Ltd. | Memory structure |
| ITUB20153728A1 (it) * | 2015-09-18 | 2017-03-18 | St Microelectronics Srl | Decodificatore di riga per un dispositivo di memoria non volatile, avente ridotta occupazione di area |
| US9721663B1 (en) * | 2016-02-18 | 2017-08-01 | Sandisk Technologies Llc | Word line decoder circuitry under a three-dimensional memory array |
| JP2018045750A (ja) | 2016-09-16 | 2018-03-22 | 東芝メモリ株式会社 | 半導体記憶装置 |
| KR102398205B1 (ko) | 2017-06-12 | 2022-05-16 | 삼성전자주식회사 | 오티피 메모리 셀을 포함하는 메모리 장치 및 그것의 프로그램 방법 |
| CN108962309B (zh) * | 2018-06-29 | 2021-12-28 | 西安交通大学 | 一种高能量利用率低功耗的堆叠sram阵列结构 |
| US10755768B2 (en) * | 2018-07-16 | 2020-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device including distributed write driving arrangement and method of operating same |
| US10861551B2 (en) | 2018-12-28 | 2020-12-08 | Micron Technology, Inc. | Memory cells configured to generate weighted inputs for neural networks |
| JP7453212B2 (ja) * | 2019-03-26 | 2024-03-19 | パナソニック インテレクチュアル プロパティ コーポレーション オブ アメリカ | 三次元データ符号化方法、三次元データ復号方法、三次元データ符号化装置、及び三次元データ復号装置 |
| US11423979B2 (en) * | 2019-04-29 | 2022-08-23 | Silicon Storage Technology, Inc. | Decoding system and physical layout for analog neural memory in deep learning artificial neural network |
| US10818731B1 (en) * | 2019-06-19 | 2020-10-27 | Avalanche Technology, Inc. | Three-dimensional nonvolatile memory |
| KR102676269B1 (ko) * | 2019-09-26 | 2024-06-19 | 에스케이하이닉스 주식회사 | 반도체 장치 |
| US11139023B1 (en) | 2020-03-19 | 2021-10-05 | Micron Technologhy, Inc. | Memory operation with double-sided asymmetric decoders |
| CN113270130B (zh) * | 2020-05-29 | 2024-08-09 | 台湾积体电路制造股份有限公司 | 存储器设备 |
| CN113411103B (zh) * | 2021-05-26 | 2022-04-22 | 盛销邦(广州)物联科技有限公司 | 一种基于rf电子标签的密集读写解码器 |
| KR20250083401A (ko) * | 2023-11-28 | 2025-06-10 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 메모리 디바이스, 메모리 시스템, 및 디코딩 회로 |
Family Cites Families (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2649204A (en) | 1950-11-27 | 1953-08-18 | Jr James M Brier | Combination sediment cup and drain plug for internal-combustion engines |
| US2649304A (en) | 1951-02-10 | 1953-08-18 | Paddock Pool Equipment Co | Aluminum springboard |
| US3154636A (en) * | 1962-03-23 | 1964-10-27 | Xerox Corp | Three dimensional display device |
| US4646266A (en) | 1984-09-28 | 1987-02-24 | Energy Conversion Devices, Inc. | Programmable semiconductor structures and methods for using the same |
| US5250859A (en) * | 1991-09-27 | 1993-10-05 | Kaplinsky Cecil H | Low power multifunction logic array |
| US5285118A (en) * | 1992-07-16 | 1994-02-08 | International Business Machines Corporation | Complementary current tree decoder |
| US5655113A (en) * | 1994-07-05 | 1997-08-05 | Monolithic System Technology, Inc. | Resynchronization circuit for a memory system and method of operating same |
| US5751012A (en) | 1995-06-07 | 1998-05-12 | Micron Technology, Inc. | Polysilicon pillar diode for use in a non-volatile memory cell |
| US5835396A (en) | 1996-10-17 | 1998-11-10 | Zhang; Guobiao | Three-dimensional read-only memory |
| JPH10241400A (ja) | 1997-02-26 | 1998-09-11 | Toshiba Corp | 半導体記憶装置 |
| US6256224B1 (en) | 2000-05-03 | 2001-07-03 | Hewlett-Packard Co | Write circuit for large MRAM arrays |
| NO972803D0 (no) | 1997-06-17 | 1997-06-17 | Opticom As | Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte |
| JP3571497B2 (ja) * | 1997-06-20 | 2004-09-29 | 富士通株式会社 | 半導体記憶装置 |
| US6191999B1 (en) * | 1997-06-20 | 2001-02-20 | Fujitsu Limited | Semiconductor memory device with reduced power consumption |
| US6185121B1 (en) | 1998-02-26 | 2001-02-06 | Lucent Technologies Inc. | Access structure for high density read only memory |
| US6034882A (en) | 1998-11-16 | 2000-03-07 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
| US6762951B2 (en) * | 2001-11-13 | 2004-07-13 | Hitachi, Ltd. | Semiconductor integrated circuit device |
| US6901006B1 (en) * | 1999-07-14 | 2005-05-31 | Hitachi, Ltd. | Semiconductor integrated circuit device including first, second and third gates |
| TW587252B (en) * | 2000-01-18 | 2004-05-11 | Hitachi Ltd | Semiconductor memory device and data processing device |
| US6856572B2 (en) | 2000-04-28 | 2005-02-15 | Matrix Semiconductor, Inc. | Multi-headed decoder structure utilizing memory array line driver with dual purpose driver device |
| US6420215B1 (en) | 2000-04-28 | 2002-07-16 | Matrix Semiconductor, Inc. | Three-dimensional memory array and method of fabrication |
| US6888750B2 (en) | 2000-04-28 | 2005-05-03 | Matrix Semiconductor, Inc. | Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication |
| US6567287B2 (en) | 2001-03-21 | 2003-05-20 | Matrix Semiconductor, Inc. | Memory device with row and column decoder circuits arranged in a checkerboard pattern under a plurality of memory arrays |
| US6631085B2 (en) | 2000-04-28 | 2003-10-07 | Matrix Semiconductor, Inc. | Three-dimensional memory array incorporating serial chain diode stack |
| KR100821456B1 (ko) | 2000-08-14 | 2008-04-11 | 샌디스크 쓰리디 엘엘씨 | 밀집한 어레이 및 전하 저장 장치와, 그 제조 방법 |
| US6591394B2 (en) | 2000-12-22 | 2003-07-08 | Matrix Semiconductor, Inc. | Three-dimensional memory array and method for storing data bits and ECC bits therein |
| US6407953B1 (en) | 2001-02-02 | 2002-06-18 | Matrix Semiconductor, Inc. | Memory array organization and related test method particularly well suited for integrated circuits having write-once memory arrays |
| US6618295B2 (en) | 2001-03-21 | 2003-09-09 | Matrix Semiconductor, Inc. | Method and apparatus for biasing selected and unselected array lines when writing a memory array |
| US7177181B1 (en) | 2001-03-21 | 2007-02-13 | Sandisk 3D Llc | Current sensing method and apparatus particularly useful for a memory array of cells having diode-like characteristics |
| US6545898B1 (en) | 2001-03-21 | 2003-04-08 | Silicon Valley Bank | Method and apparatus for writing memory arrays using external source of high programming voltage |
| US6522594B1 (en) | 2001-03-21 | 2003-02-18 | Matrix Semiconductor, Inc. | Memory array incorporating noise detection line |
| JP4808856B2 (ja) * | 2001-04-06 | 2011-11-02 | 富士通セミコンダクター株式会社 | 半導体記憶装置 |
| US6584034B1 (en) * | 2001-04-23 | 2003-06-24 | Aplus Flash Technology Inc. | Flash memory array structure suitable for multiple simultaneous operations |
| KR100387527B1 (ko) * | 2001-05-23 | 2003-06-27 | 삼성전자주식회사 | 레이아웃 사이즈가 감소된 로우 디코더를 갖는 불휘발성반도체 메모리장치 |
| US6480424B1 (en) * | 2001-07-12 | 2002-11-12 | Broadcom Corporation | Compact analog-multiplexed global sense amplifier for RAMS |
| US6525953B1 (en) | 2001-08-13 | 2003-02-25 | Matrix Semiconductor, Inc. | Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication |
| US6768685B1 (en) | 2001-11-16 | 2004-07-27 | Mtrix Semiconductor, Inc. | Integrated circuit memory array with fast test mode utilizing multiple word line selection and method therefor |
| US7081377B2 (en) | 2002-06-27 | 2006-07-25 | Sandisk 3D Llc | Three-dimensional memory |
| US6859410B2 (en) | 2002-11-27 | 2005-02-22 | Matrix Semiconductor, Inc. | Tree decoder structure particularly well-suited to interfacing array lines having extremely small layout pitch |
| US6954394B2 (en) | 2002-11-27 | 2005-10-11 | Matrix Semiconductor, Inc. | Integrated circuit and method for selecting a set of memory-cell-layer-dependent or temperature-dependent operating conditions |
| US7005350B2 (en) | 2002-12-31 | 2006-02-28 | Matrix Semiconductor, Inc. | Method for fabricating programmable memory array structures incorporating series-connected transistor strings |
| US7505321B2 (en) | 2002-12-31 | 2009-03-17 | Sandisk 3D Llc | Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same |
| US7233522B2 (en) | 2002-12-31 | 2007-06-19 | Sandisk 3D Llc | NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same |
| US6879505B2 (en) * | 2003-03-31 | 2005-04-12 | Matrix Semiconductor, Inc. | Word line arrangement having multi-layer word line segments for three-dimensional memory array |
| US7177183B2 (en) * | 2003-09-30 | 2007-02-13 | Sandisk 3D Llc | Multiple twin cell non-volatile memory array and logic block structure and method therefor |
| US7023739B2 (en) | 2003-12-05 | 2006-04-04 | Matrix Semiconductor, Inc. | NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same |
| US7221588B2 (en) | 2003-12-05 | 2007-05-22 | Sandisk 3D Llc | Memory array incorporating memory cells arranged in NAND strings |
| US20050128807A1 (en) | 2003-12-05 | 2005-06-16 | En-Hsing Chen | Nand memory array incorporating multiple series selection devices and method for operation of same |
| KR100536613B1 (ko) * | 2004-04-09 | 2005-12-14 | 삼성전자주식회사 | 프로그램 시간을 단축할 수 있는 노어형 플래시 메모리장치 및 그것의 프로그램 방법 |
| US7203123B2 (en) | 2004-12-08 | 2007-04-10 | Infineon Technologies Ag | Integrated DRAM memory device |
| US7286439B2 (en) * | 2004-12-30 | 2007-10-23 | Sandisk 3D Llc | Apparatus and method for hierarchical decoding of dense memory arrays using multiple levels of multiple-headed decoders |
| US7298665B2 (en) * | 2004-12-30 | 2007-11-20 | Sandisk 3D Llc | Dual-mode decoder circuit, integrated circuit memory array incorporating same, and related methods of operation |
| US7307268B2 (en) * | 2005-01-19 | 2007-12-11 | Sandisk Corporation | Structure and method for biasing phase change memory array for reliable writing |
-
2004
- 2004-12-30 US US11/026,470 patent/US7286439B2/en not_active Expired - Fee Related
-
2005
- 2005-12-16 EP EP11184470.0A patent/EP2450902B1/en not_active Expired - Lifetime
- 2005-12-16 CN CN2005800451715A patent/CN101138047B/zh not_active Expired - Fee Related
- 2005-12-16 JP JP2007549434A patent/JP5032336B2/ja not_active Expired - Fee Related
- 2005-12-16 EP EP05854312.5A patent/EP1831891B1/en not_active Expired - Lifetime
- 2005-12-16 KR KR1020077016213A patent/KR101194353B1/ko not_active Expired - Fee Related
- 2005-12-16 CN CN2011100734317A patent/CN102201254B/zh not_active Expired - Fee Related
- 2005-12-16 WO PCT/US2005/045564 patent/WO2006073735A1/en not_active Ceased
-
2007
- 2007-10-22 US US11/876,563 patent/US7633829B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1831891A4 (en) | 2008-11-12 |
| US20080101149A1 (en) | 2008-05-01 |
| EP2450902B1 (en) | 2014-03-19 |
| CN101138047B (zh) | 2011-05-18 |
| CN102201254A (zh) | 2011-09-28 |
| US7633829B2 (en) | 2009-12-15 |
| CN101138047A (zh) | 2008-03-05 |
| EP1831891B1 (en) | 2015-07-08 |
| EP2450902A2 (en) | 2012-05-09 |
| EP1831891A1 (en) | 2007-09-12 |
| US7286439B2 (en) | 2007-10-23 |
| US20060146639A1 (en) | 2006-07-06 |
| CN102201254B (zh) | 2012-11-14 |
| KR101194353B1 (ko) | 2012-10-25 |
| KR20070110835A (ko) | 2007-11-20 |
| EP2450902A3 (en) | 2012-09-05 |
| JP2008527585A (ja) | 2008-07-24 |
| WO2006073735A1 (en) | 2006-07-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5032336B2 (ja) | 複数ヘッドデコーダの複数のレベルを使用した高密度メモリアレイの階層復号化のための機器および方法 | |
| US7106652B2 (en) | Word line arrangement having multi-layer word line segments for three-dimensional memory array | |
| US6856572B2 (en) | Multi-headed decoder structure utilizing memory array line driver with dual purpose driver device | |
| US6859410B2 (en) | Tree decoder structure particularly well-suited to interfacing array lines having extremely small layout pitch | |
| US7177183B2 (en) | Multiple twin cell non-volatile memory array and logic block structure and method therefor | |
| US8637870B2 (en) | Three-dimensional memory device incorporating segmented array line memory array | |
| KR101573509B1 (ko) | 섹션 데이터 라인들을 갖는 메모리 시스템 | |
| JP4939528B2 (ja) | メモリラインドライバのノンバイナリグループ用のデコーディング回路 | |
| US8400816B2 (en) | Resistance change memory device | |
| KR20090057231A (ko) | 가역 극성 워드 라인과 비트 라인 디코더를 결합한 패시브 엘리먼트 메모리 어레이용 방법과 장치 | |
| KR20090057373A (ko) | 메모리 어레이에 판독/기입 회로를 결합하기 위한 듀얼 데이터 종속 버스 | |
| KR20090057374A (ko) | 메모리 어레이 블록 선택을 위하여 두 개의 데이터 버스를 통합한 메모리 어레이용 방법과 장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081211 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20081211 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110622 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110802 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20111101 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20111109 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111202 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120619 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120628 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5032336 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150706 Year of fee payment: 3 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |