JP4939528B2 - メモリラインドライバのノンバイナリグループ用のデコーディング回路 - Google Patents
メモリラインドライバのノンバイナリグループ用のデコーディング回路 Download PDFInfo
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- JP4939528B2 JP4939528B2 JP2008504039A JP2008504039A JP4939528B2 JP 4939528 B2 JP4939528 B2 JP 4939528B2 JP 2008504039 A JP2008504039 A JP 2008504039A JP 2008504039 A JP2008504039 A JP 2008504039A JP 4939528 B2 JP4939528 B2 JP 4939528B2
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- array
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- decoder
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
Description
ITIMJT 不揮発性磁気抵抗ラム」に説明されており、前記両文献を参考文献としてここに援用する。或る受動素子メモリセルには、ダイオードに似た特性伝導性を有する少なくとも1つの層と、電界を掛けると伝導性が変化する少なくとも1つの有機材とを含んでいる有機材の層が組み込まれている。Gedensen他への米国特許第6,055,180号は有機受動素子アレイについて述べており、同特許を参考文献として援用する。相変化材や非晶質固体の様な材料を備えているメモリセルも用いることができる。Wolstenholme他への米国特許第5,751,012号及びOvshinsky他への米国特許第4,646,266号を参照頂きたく、両特許を参考文献として援用する。
Claims (12)
- 集積回路であって、
複数のアレイラインを備えているメモリアレイと、
前記複数のアレイラインに連結されているノンバイナリな数のアレイラインドライバ回路と、
前記ノンバイナリな数のアレイラインドライバ回路に連結されているデコーダ回路と、を備え、
前記デコーダ回路は、
バイナリデコーダと、
ノンバイナリ演算を実行する回路と、を含み、
前記ノンバイナリ演算の結果は前記バイナリデコーダへ入力として提供される、集積回路。 - 前記数は6である、請求項1に記載の集積回路。
- 前記ノンバイナリ演算は、モジュロ3剰余演算を含んでいる、請求項1に記載の集積回路。
- 前記複数のアレイラインはワードラインを備えており、前記複数のアレイラインドライバ回路はワードラインドライバ回路を備えている、請求項1に記載の集積回路。
- 前記ワードラインのグループを選択する第2のバイナリデコーダと、
ノンバイナリ演算を実行する第2の回路であって、前記ノンバイナリ演算の結果は前記第2のバイナリデコーダへ入力として提供される、第2の回路と、を更に備えている請求項4に記載の集積回路。 - 前記第2の回路によって実行される前記ノンバイナリ演算は、3で除する演算を含んでいる、請求項5に記載の集積回路。
- 前記メモリアレイは、互いに上下に、半導体基板の上に形成された2つ以上のメモリ平面を組み込んでいるモノリシック半導体集積回路を含んでいる三次元メモリアレイを備えており、前記複数のアレイラインドライバ回路と前記デコーダ回路は、前記三次元メモリアレイの下の前記半導体基板の中に配置されている、請求項1に記載の集積回路。
- 集積回路において、
メモリアレイの複数のアレイラインに連結されているノンバイナリな数のアレイラインドライバ回路の内の1つを選択するバイナリデコーダと、
ノンバイナリ演算を実行する回路であって、前記ノンバイナリ演算の結果は前記バイナリデコーダへ入力として提供される、回路と、を備えている集積回路。 - 前記ノンバイナリ演算は、モジュロ3剰余演算を含んでいる、請求項8に記載の集積回路。
- 集積回路において、
複数のアレイラインを備えているメモリアレイと、
前記複数のアレイラインに連結されている複数のグループのアレイラインドライバ回路と、
前記複数のグループのアレイラインドライバ回路の内の少なくとも1つの中にある、或る数のアレイラインドライバ回路であって、前記数は2の整数乗以外である、アレイラインドライバ回路と、
前記アレイラインドライバ回路の内の1つを選択するように構成されている制御回路と、を備え、
前記制御回路は、
バイナリデコーダと、
ノンバイナリ演算を実行する回路と、を含み、
前記ノンバイナリ演算の結果は前記バイナリデコーダへ入力として提供される、集積回路。 - 前記複数のグループの内の少なくとも1つの中にある前記アレイラインドライバ回路は、前記制御回路によって提供される制御入力信号を共有している、請求項10に記載の集積回路。
- 前記メモリアレイは複数のサブアレイを備えており、前記複数のグループのアレイラインドライバ回路の内の少なくとも1つは、1つ或いは2つのメモリセルのサブアレイをサポートしている、請求項10に記載の集積回路。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/095,905 US7054219B1 (en) | 2005-03-31 | 2005-03-31 | Transistor layout configuration for tight-pitched memory array lines |
US11/095,905 | 2005-03-31 | ||
US11/146,952 US7272052B2 (en) | 2005-03-31 | 2005-06-07 | Decoding circuit for non-binary groups of memory line drivers |
US11/146,952 | 2005-06-07 | ||
PCT/US2006/005067 WO2006107409A2 (en) | 2005-03-31 | 2006-02-14 | Decoding circuit for non-binary groups of memory line drivers |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008535137A JP2008535137A (ja) | 2008-08-28 |
JP2008535137A5 JP2008535137A5 (ja) | 2009-04-02 |
JP4939528B2 true JP4939528B2 (ja) | 2012-05-30 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008504039A Expired - Fee Related JP4939528B2 (ja) | 2005-03-31 | 2006-02-14 | メモリラインドライバのノンバイナリグループ用のデコーディング回路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7272052B2 (ja) |
EP (1) | EP1869679A4 (ja) |
JP (1) | JP4939528B2 (ja) |
KR (1) | KR101204021B1 (ja) |
WO (1) | WO2006107409A2 (ja) |
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- 2005-06-07 US US11/146,952 patent/US7272052B2/en not_active Expired - Fee Related
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2006
- 2006-02-14 KR KR1020077021573A patent/KR101204021B1/ko active IP Right Grant
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US20060221702A1 (en) | 2006-10-05 |
WO2006107409A2 (en) | 2006-10-12 |
EP1869679A2 (en) | 2007-12-26 |
EP1869679A4 (en) | 2009-03-18 |
WO2006107409A3 (en) | 2007-04-19 |
KR20070122201A (ko) | 2007-12-28 |
KR101204021B1 (ko) | 2012-11-23 |
JP2008535137A (ja) | 2008-08-28 |
US7272052B2 (en) | 2007-09-18 |
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