JP5318211B2 - 区分データ線を有するメモリシステム - Google Patents
区分データ線を有するメモリシステム Download PDFInfo
- Publication number
- JP5318211B2 JP5318211B2 JP2011525038A JP2011525038A JP5318211B2 JP 5318211 B2 JP5318211 B2 JP 5318211B2 JP 2011525038 A JP2011525038 A JP 2011525038A JP 2011525038 A JP2011525038 A JP 2011525038A JP 5318211 B2 JP5318211 B2 JP 5318211B2
- Authority
- JP
- Japan
- Prior art keywords
- data storage
- lines
- data lines
- local data
- storage elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 238000013500 data storage Methods 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 19
- 238000003491 array Methods 0.000 claims description 6
- 230000008878 coupling Effects 0.000 abstract description 4
- 238000010168 coupling process Methods 0.000 abstract description 4
- 238000005859 coupling reaction Methods 0.000 abstract description 4
- 101000739577 Homo sapiens Selenocysteine-specific elongation factor Proteins 0.000 description 28
- 102100037498 Selenocysteine-specific elongation factor Human genes 0.000 description 28
- 238000010586 diagram Methods 0.000 description 17
- 230000002441 reversible effect Effects 0.000 description 16
- 239000000463 material Substances 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0028—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
Landscapes
- Semiconductor Memories (AREA)
- Dram (AREA)
Description
本明細書の目的に対しては、接続は、直接接続であっても非直接接続(例えば他の部分を介した接続)であってもよい。行制御回路108は、システム制御論理回路130から1つ又はそれ以上の様々な制御信号とM本の行アドレス信号で構成される一つグループの信号を受信し、典型的には、読み出しとプログラミング動作の両者(例えば、設定(SET)とリセット(RESET))のためのブロック選択回路126と、アレイターミナルドライバ124と、行デコーダ122などの回路群を含んでいる。
Claims (11)
- 複数のデータ記憶素子と、
複数のデータ記憶素子の内側に配置されており、複数のデータ記憶素子と通信する複数の信号線と、
複数のデータ記憶素子の外側に配置されている複数のローカルデータ線であり、前記ローカルデータ線の異なるサブセットが、前記信号線を介して、前記データ記憶素子の異なるサブセットと選択的に通信する複数のローカルデータ線と、
複数のデータ記憶素子の外側に配置されており、ローカルデータ線の複数のサブセットと選択的に通信する複数のグローバルデータ線と、
グローバルデータ線に接続されている制御回路と、
を備えており、
複数のデータ記憶素子は、基板の表面の上方であって制御回路の上方に位置しており、
ローカルデータ線は、複数のデータ記憶素子と基板の表面との間に配置されており、
グローバルデータ線は、複数のデータ記憶素子の上方に位置している、データ記憶システム。 - ローカルデータ線は、複数のデータ記憶素子の下方に位置する少なくとも一つの金属層内に配置されており、
グローバルデータ線は、複数のデータ記憶素子の上方に位置する少なくとも一つの金属層内に配置されている、
ことを特徴とする請求項1のデータ記憶システム。 - 信号線はビット線であり、
複数のデータ記憶素子は、モノリシック3次元メモリアレイである、
ことを特徴とする請求項1又は2に記載のデータ記憶システム。 - 信号線とローカルデータ線とに接続されており、信号線をローカルデータ線に選択的に電気的に接続する選択回路第1グループを、さらに備える請求項1から3のいずれか1項に記載のデータ記憶システム。
- ローカルデータ線の複数のサブセットとグローバルデータ線とに接続されており、ローカルデータ線の複数のサブセットをグローバルデータ線に選択的に電気的に接続する選択回路第2グループを、さらに備える請求項4のデータ記憶システム。
- 複数のデータ記憶素子は複数のベイに分けられて配置されており、
各ベイは複数のブロックを含んでおり、
各ブロックは複数のデータ記憶素子を含んでおり、
各ブロックは、関連付けられた選択回路第1グループのサブセットと関連付けられた信号線のサブセットを介して、ローカルデータ線の異なるサブセットに接続されている、
ことを特徴とする請求項4又は5に記載のデータ記憶システム。 - 複数のデータ記憶素子は複数のベイの中に配置されており、
各ベイは複数のブロックを含んでおり、
各ブロックは複数のデータ記憶素子を含んでおり、
複数のブロックは、各グループが1個以上のブロックを含むようにグループ化されており、
複数のブロックの各グループは、関連付けられた選択回路第1グループのサブセットと関連付けられた信号線のサブセットを介して、ローカルデータ線の異なるサブセットに接続されている、
ことを特徴とする請求項4又は5に記載のデータ記憶システム。 - 複数のデータ記憶素子は複数のベイの中に配置されており、
各ベイは複数のブロックを含んでおり、
各ブロックは複数のデータ記憶素子を含んでおり、
各ブロックは、関連付けられた選択回路第1グループのサブセットと関連付けられた信号線のサブセットを介して、ローカルデータ線の異なる第1サブセットに接続されており、
各ブロックは、関連付けられた選択回路第1グループのサブセットと関連付けられた信号線のサブセットを介して、ローカルデータ線の異なる第2サブセットに接続されており、
ローカルデータ線の第1サブセットはプログラミングに用いられ、ローカルデータ線の第2サブセットは読み出しに用いられるものである、
ことを特徴とする請求項4又は5に記載のデータ記憶システム。 - データ記憶システムの動作方法であり、
信号線がローカルデータ線の一セットと通信するように、信号線の一セットをローカルデータ線の一セットに電気的に接続するステップ;ここで、信号線は複数のデータ記憶素子の第1サブセットと通信し、ローカルデータ線の一セットは複数のデータ記憶素子の外側に配置されており、
ローカルデータ線の前記サブセットは、グローバルデータ線の前記セットと通信するように、ローカルデータ線のサブセットを選択し、グローバルデータ線のセットと電気的に接続するステップ;ここで、グローバルデータ線は、複数のデータ記憶素子の外側に配置されており、制御回路に接続されており、他のローカルデータ線にも接続されており、
制御回路を用いて、データ記憶素子の第1サブセットの少なくとも一部に対してメモリ動作を実行するステップ;
を含んでおり、
複数のデータ記憶素子は、基板の表面の上方であって制御回路の上方に位置しており、
ローカルデータ線は、複数のデータ記憶素子と基板の表面との間に配置されており、
グローバルデータ線は、複数のデータ記憶素子の上方に位置している、
データ記憶システムの動作方法。 - 複数のデータ記憶素子は、モノリシック3次元メモリアレイであり、
ローカルデータ線のセットは、モノリシック3次元メモリアレイの下方に位置する少なくとも一つの金属層内に配置されており、
グローバルデータ線は、モノリシック3次元メモリアレイの上方に位置する少なくとも一つの金属層内に配置されている、
ことを特徴とする請求項9に記載の方法。 - 信号線のセットをローカルデータ線のセットに電気的に接続する前記ステップは、ローカルデータ線のセットと信号線のセットに接続されている選択回路に選択信号を送信するステップを含み、
ローカルデータ線のサブセットを選択してグローバルデータ線のセットに電気的に接続する前記ステップは、グローバルデータ線のセットとローカルデータ線のセットに接続されているマルチプレクサ回路に選択信号を送信するステップを含む、
ことを特徴とする請求項9に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9172008P | 2008-08-25 | 2008-08-25 | |
US61/091,720 | 2008-08-25 | ||
US12/410,648 US8130528B2 (en) | 2008-08-25 | 2009-03-25 | Memory system with sectional data lines |
US12/410,648 | 2009-03-25 | ||
PCT/US2009/050970 WO2010024982A1 (en) | 2008-08-25 | 2009-07-17 | Memory system with sectional data lines |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012501038A JP2012501038A (ja) | 2012-01-12 |
JP5318211B2 true JP5318211B2 (ja) | 2013-10-16 |
Family
ID=41696239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011525038A Active JP5318211B2 (ja) | 2008-08-25 | 2009-07-17 | 区分データ線を有するメモリシステム |
Country Status (8)
Country | Link |
---|---|
US (4) | US8130528B2 (ja) |
EP (1) | EP2321826B1 (ja) |
JP (1) | JP5318211B2 (ja) |
KR (1) | KR101573509B1 (ja) |
CN (1) | CN102132352B (ja) |
AT (1) | ATE545134T1 (ja) |
TW (1) | TWI427642B (ja) |
WO (1) | WO2010024982A1 (ja) |
Families Citing this family (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8130528B2 (en) | 2008-08-25 | 2012-03-06 | Sandisk 3D Llc | Memory system with sectional data lines |
US8027209B2 (en) | 2008-10-06 | 2011-09-27 | Sandisk 3D, Llc | Continuous programming of non-volatile memory |
US20100157647A1 (en) * | 2008-12-19 | 2010-06-24 | Unity Semiconductor Corporation | Memory access circuits and layout of the same for cross-point memory arrays |
US8279650B2 (en) | 2009-04-20 | 2012-10-02 | Sandisk 3D Llc | Memory system with data line switching scheme |
JP2013501293A (ja) * | 2009-08-04 | 2013-01-10 | アクサナ・(イスラエル)・リミテッド | 遠隔データミラーリングシステムにおけるデータギャップ管理 |
JP5289353B2 (ja) * | 2010-02-05 | 2013-09-11 | 株式会社東芝 | 半導体記憶装置 |
US9054975B2 (en) * | 2010-08-30 | 2015-06-09 | Deutsche Telekom Ag | Virtualization and replay-based system for network debugging |
CN104040633B (zh) | 2010-12-14 | 2017-06-13 | 桑迪士克科技有限责任公司 | 用于具有垂直位线的三维非易失性存储器的架构 |
US8553476B2 (en) | 2011-03-03 | 2013-10-08 | Sandisk 3D Llc | Three dimensional memory system with page of data across word lines |
US8374051B2 (en) * | 2011-03-03 | 2013-02-12 | Sandisk 3D Llc | Three dimensional memory system with column pipeline |
US9053766B2 (en) * | 2011-03-03 | 2015-06-09 | Sandisk 3D, Llc | Three dimensional memory system with intelligent select circuit |
US8699293B2 (en) * | 2011-04-27 | 2014-04-15 | Sandisk 3D Llc | Non-volatile storage system with dual block programming |
US8860117B2 (en) | 2011-04-28 | 2014-10-14 | Micron Technology, Inc. | Semiconductor apparatus with multiple tiers of memory cells with peripheral transistors, and methods |
US8526264B2 (en) * | 2011-06-29 | 2013-09-03 | Stmicroelectronics International N.V. | Partial write on a low power memory architecture |
CN102332287B (zh) * | 2011-07-15 | 2013-09-18 | 北京兆易创新科技股份有限公司 | 存储器电路及应用所述存储器电路进行数据读取的方法 |
CN102332288B (zh) * | 2011-07-15 | 2014-01-15 | 北京兆易创新科技股份有限公司 | 存储器电路及应用所述存储器电路读取数据的方法 |
CN102332295B (zh) * | 2011-07-15 | 2013-06-26 | 北京兆易创新科技股份有限公司 | 存储器电路及应用所述存储器电路读取数据的方法 |
CN102332296B (zh) * | 2011-07-15 | 2013-06-26 | 北京兆易创新科技股份有限公司 | 一种存储器电路的数据读取及数据写入方法 |
US9836340B2 (en) * | 2011-10-03 | 2017-12-05 | International Business Machines Corporation | Safe management of data storage using a volume manager |
US9817733B2 (en) * | 2011-10-05 | 2017-11-14 | International Business Machines Corporation | Resource recovery for checkpoint-based high-availability in a virtualized environment |
KR101916718B1 (ko) | 2012-02-28 | 2018-11-09 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 메모리 관리 방법 |
US9171584B2 (en) | 2012-05-15 | 2015-10-27 | Sandisk 3D Llc | Three dimensional non-volatile storage with interleaved vertical select devices above and below vertical bit lines |
CN104508646A (zh) * | 2012-06-08 | 2015-04-08 | 惠普发展公司,有限责任合伙企业 | 访问存储器 |
US8964474B2 (en) | 2012-06-15 | 2015-02-24 | Micron Technology, Inc. | Architecture for 3-D NAND memory |
US10037271B1 (en) * | 2012-06-27 | 2018-07-31 | Teradata Us, Inc. | Data-temperature-based control of buffer cache memory in a database system |
JP6465806B2 (ja) * | 2012-11-20 | 2019-02-06 | アイ. ペドル,チャールズ | ソリッドステートドライブアーキテクチャ |
US11037625B2 (en) | 2012-11-20 | 2021-06-15 | Thstyme Bermuda Limited | Solid state drive architectures |
WO2014105013A1 (en) * | 2012-12-27 | 2014-07-03 | Intel Corporation | Sram bit-line and write assist apparatus and method for lowering dynamic power and peak current, and a dual input level-shifter |
WO2014138124A1 (en) | 2013-03-04 | 2014-09-12 | Sandisk 3D Llc | Vertical bit line non-volatile memory systems and methods of fabrication |
US9165933B2 (en) | 2013-03-07 | 2015-10-20 | Sandisk 3D Llc | Vertical bit line TFT decoder for high voltage operation |
US9778884B2 (en) * | 2013-03-13 | 2017-10-03 | Hewlett Packard Enterprise Development Lp | Virtual storage pool |
US8947944B2 (en) | 2013-03-15 | 2015-02-03 | Sandisk 3D Llc | Program cycle skip evaluation before write operations in non-volatile memory |
US8947972B2 (en) | 2013-03-15 | 2015-02-03 | Sandisk 3D Llc | Dynamic address grouping for parallel programming in non-volatile memory |
US9201662B2 (en) * | 2013-03-29 | 2015-12-01 | Dell Products, Lp | System and method for pre-operating system memory map management to minimize operating system failures |
US20140297953A1 (en) * | 2013-03-31 | 2014-10-02 | Microsoft Corporation | Removable Storage Device Identity and Configuration Information |
US9836413B2 (en) * | 2013-04-03 | 2017-12-05 | International Business Machines Corporation | Maintaining cache consistency in a cache for cache eviction policies supporting dependencies |
US9202533B2 (en) | 2013-10-09 | 2015-12-01 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device changing the number of selected bits and/or the number of selected bays at data write operation |
US9711225B2 (en) | 2013-10-16 | 2017-07-18 | Sandisk Technologies Llc | Regrouping and skipping cycles in non-volatile memory |
US9824020B2 (en) * | 2013-12-30 | 2017-11-21 | Unisys Corporation | Systems and methods for memory management in a dynamic translation computer system |
US11073986B2 (en) * | 2014-01-30 | 2021-07-27 | Hewlett Packard Enterprise Development Lp | Memory data versioning |
WO2015116077A1 (en) * | 2014-01-30 | 2015-08-06 | Hewlett-Packard Development Company, L.P. | Access controlled memory region |
US9362338B2 (en) | 2014-03-03 | 2016-06-07 | Sandisk Technologies Inc. | Vertical thin film transistors in non-volatile storage systems |
US9379246B2 (en) | 2014-03-05 | 2016-06-28 | Sandisk Technologies Inc. | Vertical thin film transistor selection devices and methods of fabrication |
US9627009B2 (en) | 2014-07-25 | 2017-04-18 | Sandisk Technologies Llc | Interleaved grouped word lines for three dimensional non-volatile storage |
TWI552162B (zh) * | 2014-07-31 | 2016-10-01 | Zhi-Cheng Xiao | Low power memory |
US9767024B2 (en) * | 2014-12-18 | 2017-09-19 | Intel Corporation | Cache closure and persistent snapshot in dynamic code generating system software |
US9824026B2 (en) * | 2014-12-23 | 2017-11-21 | Intel Corporation | Apparatus and method for managing a virtual graphics processor unit (VGPU) |
US9564215B2 (en) | 2015-02-11 | 2017-02-07 | Sandisk Technologies Llc | Independent sense amplifier addressing and quota sharing in non-volatile memory |
US9450023B1 (en) | 2015-04-08 | 2016-09-20 | Sandisk Technologies Llc | Vertical bit line non-volatile memory with recessed word lines |
US9875037B2 (en) * | 2015-06-18 | 2018-01-23 | International Business Machines Corporation | Implementing multiple raid level configurations in a data storage device |
US10403338B2 (en) | 2015-08-30 | 2019-09-03 | Chih-Cheng Hsiao | Low power memory device with column and row line switches for specific memory cells |
US20160189755A1 (en) | 2015-08-30 | 2016-06-30 | Chih-Cheng Hsiao | Low power memory device |
US9946512B2 (en) * | 2015-09-25 | 2018-04-17 | International Business Machines Corporation | Adaptive radix external in-place radix sort |
US9760290B2 (en) * | 2015-09-25 | 2017-09-12 | International Business Machines Corporation | Smart volume manager for storage space usage optimization |
US9542980B1 (en) * | 2016-03-29 | 2017-01-10 | Nanya Technology Corp. | Sense amplifier with mini-gap architecture and parallel interconnect |
US9921757B1 (en) * | 2016-03-31 | 2018-03-20 | EMC IP Holding Company LLC | Using an FPGA for integration with low-latency, non-volatile memory |
US9679650B1 (en) | 2016-05-06 | 2017-06-13 | Micron Technology, Inc. | 3D NAND memory Z-decoder |
US10126896B2 (en) * | 2016-06-28 | 2018-11-13 | Synaptics Incorporated | Selective receiver electrode scanning |
US10296460B2 (en) * | 2016-06-29 | 2019-05-21 | Oracle International Corporation | Prefetch bandwidth throttling by dynamically adjusting miss buffer prefetch-dropping thresholds |
KR102188490B1 (ko) | 2016-08-31 | 2020-12-09 | 마이크론 테크놀로지, 인크. | 강유전체 메모리를 포함하며 강유전체 메모리에 액세스하기 위한 장치 및 방법 |
CN206471121U (zh) * | 2016-10-07 | 2017-09-05 | 芝奇国际实业股份有限公司 | 存储器装置 |
KR20190051653A (ko) * | 2017-11-07 | 2019-05-15 | 삼성전자주식회사 | 반도체 메모리 장치 그것의 데이터 경로 설정 방법 |
US10923161B2 (en) * | 2018-01-18 | 2021-02-16 | Arm Limited | Bitcell wordline strapping circuitry |
US11450381B2 (en) | 2019-08-21 | 2022-09-20 | Micron Technology, Inc. | Multi-deck memory device including buffer circuitry under array |
US11043500B1 (en) * | 2020-03-19 | 2021-06-22 | Micron Technology, Inc. | Integrated assemblies comprising twisted digit line configurations |
US20240161828A1 (en) * | 2022-11-14 | 2024-05-16 | Sandisk Technologies Llc | Non-volatile memory with sub-blocks |
Family Cites Families (122)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1461245A (en) * | 1973-01-28 | 1977-01-13 | Hawker Siddeley Dynamics Ltd | Reliability of random access memory systems |
US5111071A (en) | 1989-10-19 | 1992-05-05 | Texas Instruments Incorporated | Threshold detection circuit |
US5159572A (en) * | 1990-12-24 | 1992-10-27 | Motorola, Inc. | DRAM architecture having distributed address decoding and timing control |
US5315541A (en) * | 1992-07-24 | 1994-05-24 | Sundisk Corporation | Segmented column memory array |
EP0580923B1 (en) | 1992-07-30 | 1997-10-15 | STMicroelectronics S.r.l. | Device comprising an error amplifier, a control portion and a circuit for detecting voltage variations in relation to a set value |
US5369614A (en) | 1992-10-12 | 1994-11-29 | Ricoh Company, Ltd. | Detecting amplifier with current mirror structure |
US5623436A (en) | 1993-06-17 | 1997-04-22 | Information Storage Devices | Method and apparatus for adjustment and control of an iterative method of recording analog signals with on-chip trimming techniques |
JP3205658B2 (ja) | 1993-12-28 | 2001-09-04 | 新日本製鐵株式会社 | 半導体記憶装置の読み出し方法 |
US5742787A (en) | 1995-04-10 | 1998-04-21 | Intel Corporation | Hardware reset of a write state machine for flash memory |
KR100253868B1 (ko) | 1995-11-13 | 2000-05-01 | 니시무로 타이죠 | 불휘발성 반도체기억장치 |
US5969985A (en) | 1996-03-18 | 1999-10-19 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
US5712815A (en) | 1996-04-22 | 1998-01-27 | Advanced Micro Devices, Inc. | Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells |
US5675537A (en) | 1996-08-22 | 1997-10-07 | Advanced Micro Devices, Inc. | Erase method for page mode multiple bits-per-cell flash EEPROM |
TW338165B (en) | 1996-09-09 | 1998-08-11 | Sony Co Ltd | Semiconductor nand type flash memory with incremental step pulse programming |
US5835396A (en) * | 1996-10-17 | 1998-11-10 | Zhang; Guobiao | Three-dimensional read-only memory |
US5847998A (en) | 1996-12-20 | 1998-12-08 | Advanced Micro Devices, Inc. | Non-volatile memory array that enables simultaneous read and write operations |
US6809462B2 (en) | 2000-04-05 | 2004-10-26 | Sri International | Electroactive polymer sensors |
US5841696A (en) | 1997-03-05 | 1998-11-24 | Advanced Micro Devices, Inc. | Non-volatile memory enabling simultaneous reading and writing by time multiplexing a decode path |
US5915167A (en) * | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
JP3481817B2 (ja) | 1997-04-07 | 2003-12-22 | 株式会社東芝 | 半導体記憶装置 |
US5959892A (en) | 1997-08-26 | 1999-09-28 | Macronix International Co., Ltd. | Apparatus and method for programming virtual ground EPROM array cell without disturbing adjacent cells |
US5963465A (en) * | 1997-12-12 | 1999-10-05 | Saifun Semiconductors, Ltd. | Symmetric segmented memory array architecture |
US5894437A (en) | 1998-01-23 | 1999-04-13 | Hyundai Elecronics America, Inc. | Concurrent read/write architecture for a flash memory |
JP3344313B2 (ja) | 1998-03-25 | 2002-11-11 | 日本電気株式会社 | 不揮発性半導体メモリ装置 |
US5912839A (en) | 1998-06-23 | 1999-06-15 | Energy Conversion Devices, Inc. | Universal memory element and method of programming same |
US6141241A (en) | 1998-06-23 | 2000-10-31 | Energy Conversion Devices, Inc. | Universal memory element with systems employing same and apparatus and method for reading, writing and programming same |
JP3999900B2 (ja) | 1998-09-10 | 2007-10-31 | 株式会社東芝 | 不揮発性半導体メモリ |
US6034882A (en) * | 1998-11-16 | 2000-03-07 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
US6214666B1 (en) | 1998-12-18 | 2001-04-10 | Vantis Corporation | Method of forming a non-volatile memory device |
JP2000243086A (ja) | 1998-12-24 | 2000-09-08 | Mitsubishi Electric Corp | 半導体記憶装置 |
US6157560A (en) * | 1999-01-25 | 2000-12-05 | Winbond Electronics Corporation | Memory array datapath architecture |
KR100331847B1 (ko) | 1999-06-29 | 2002-04-09 | 박종섭 | 레퍼런스 메모리셀의 문턱전압 설정회로 및 그를 이용한 문턱전압 설정방법 |
JP2001015352A (ja) | 1999-06-30 | 2001-01-19 | Mitsubishi Electric Corp | 変圧器 |
US6091633A (en) | 1999-08-09 | 2000-07-18 | Sandisk Corporation | Memory array architecture utilizing global bit lines shared by multiple cells |
JP2001067884A (ja) | 1999-08-31 | 2001-03-16 | Hitachi Ltd | 不揮発性半導体記憶装置 |
US6292048B1 (en) | 1999-11-11 | 2001-09-18 | Intel Corporation | Gate enhancement charge pump for low voltage power supply |
TW587252B (en) * | 2000-01-18 | 2004-05-11 | Hitachi Ltd | Semiconductor memory device and data processing device |
US6426893B1 (en) | 2000-02-17 | 2002-07-30 | Sandisk Corporation | Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks |
JP3983969B2 (ja) | 2000-03-08 | 2007-09-26 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US6301161B1 (en) | 2000-04-25 | 2001-10-09 | Winbond Electronics Corporation | Programming flash memory analog storage using coarse-and-fine sequence |
US6420215B1 (en) * | 2000-04-28 | 2002-07-16 | Matrix Semiconductor, Inc. | Three-dimensional memory array and method of fabrication |
US6567287B2 (en) * | 2001-03-21 | 2003-05-20 | Matrix Semiconductor, Inc. | Memory device with row and column decoder circuits arranged in a checkerboard pattern under a plurality of memory arrays |
US6856572B2 (en) * | 2000-04-28 | 2005-02-15 | Matrix Semiconductor, Inc. | Multi-headed decoder structure utilizing memory array line driver with dual purpose driver device |
US6331943B1 (en) | 2000-08-28 | 2001-12-18 | Motorola, Inc. | MTJ MRAM series-parallel architecture |
US6529410B1 (en) | 2000-09-20 | 2003-03-04 | Advanced Micro Devices, Inc. | NAND array structure and method with buried layer |
JP3922516B2 (ja) | 2000-09-28 | 2007-05-30 | 株式会社ルネサステクノロジ | 不揮発性メモリと不揮発性メモリの書き込み方法 |
US6587370B2 (en) | 2000-11-01 | 2003-07-01 | Canon Kabushiki Kaisha | Magnetic memory and information recording and reproducing method therefor |
KR100385230B1 (ko) | 2000-12-28 | 2003-05-27 | 삼성전자주식회사 | 불휘발성 반도체 메모리 장치의 프로그램 방법 |
US6574145B2 (en) | 2001-03-21 | 2003-06-03 | Matrix Semiconductor, Inc. | Memory device and method for sensing while programming a non-volatile memory cell |
US6473332B1 (en) | 2001-04-04 | 2002-10-29 | The University Of Houston System | Electrically variable multi-state resistance computing |
JP4907011B2 (ja) | 2001-04-27 | 2012-03-28 | 株式会社半導体エネルギー研究所 | 不揮発性メモリとその駆動方法、及び半導体装置 |
US6532172B2 (en) * | 2001-05-31 | 2003-03-11 | Sandisk Corporation | Steering gate and bit line segmentation in non-volatile memories |
US6552935B2 (en) | 2001-08-02 | 2003-04-22 | Stmicroelectronics, Inc. | Dual bank flash memory device and method |
US6525953B1 (en) * | 2001-08-13 | 2003-02-25 | Matrix Semiconductor, Inc. | Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication |
US6529409B1 (en) | 2001-09-10 | 2003-03-04 | Silicon Storage Technology, Inc. | Integrated circuit for concurrent flash memory with uneven array architecture |
US6552932B1 (en) * | 2001-09-21 | 2003-04-22 | Sandisk Corporation | Segmented metal bitlines |
US6879525B2 (en) | 2001-10-31 | 2005-04-12 | Hewlett-Packard Development Company, L.P. | Feedback write method for programmable memory |
US6873538B2 (en) | 2001-12-20 | 2005-03-29 | Micron Technology, Inc. | Programmable conductor random access memory and a method for writing thereto |
US6871257B2 (en) | 2002-02-22 | 2005-03-22 | Sandisk Corporation | Pipelined parallel programming operation in a non-volatile memory system |
US6563369B1 (en) | 2002-03-26 | 2003-05-13 | Intel Corporation | Active current mirror circuit |
US6940748B2 (en) | 2002-05-16 | 2005-09-06 | Micron Technology, Inc. | Stacked 1T-nMTJ MRAM structure |
US6952043B2 (en) * | 2002-06-27 | 2005-10-04 | Matrix Semiconductor, Inc. | Electrically isolated pillars in active devices |
US7081377B2 (en) * | 2002-06-27 | 2006-07-25 | Sandisk 3D Llc | Three-dimensional memory |
US6657889B1 (en) | 2002-06-28 | 2003-12-02 | Motorola, Inc. | Memory having write current ramp rate control |
US6859382B2 (en) | 2002-08-02 | 2005-02-22 | Unity Semiconductor Corporation | Memory array of a non-volatile ram |
US20040036103A1 (en) | 2002-08-20 | 2004-02-26 | Macronix International Co., Ltd. | Memory device and method of manufacturing the same |
US6940744B2 (en) | 2002-10-31 | 2005-09-06 | Unity Semiconductor Corporation | Adaptive programming technique for a re-writable conductive memory device |
JP4249992B2 (ja) | 2002-12-04 | 2009-04-08 | シャープ株式会社 | 半導体記憶装置及びメモリセルの書き込み並びに消去方法 |
US7767499B2 (en) * | 2002-12-19 | 2010-08-03 | Sandisk 3D Llc | Method to form upward pointing p-i-n diodes having large and uniform current |
AU2003296988A1 (en) * | 2002-12-19 | 2004-07-29 | Matrix Semiconductor, Inc | An improved method for making high-density nonvolatile memory |
US7005350B2 (en) | 2002-12-31 | 2006-02-28 | Matrix Semiconductor, Inc. | Method for fabricating programmable memory array structures incorporating series-connected transistor strings |
DE10310163A1 (de) | 2003-03-08 | 2004-09-16 | Braun Gmbh | Schiebeschalter |
US7706167B2 (en) | 2003-03-18 | 2010-04-27 | Kabushiki Kaisha Toshiba | Resistance change memory device |
US7233024B2 (en) * | 2003-03-31 | 2007-06-19 | Sandisk 3D Llc | Three-dimensional memory device incorporating segmented bit line memory array |
US6879505B2 (en) * | 2003-03-31 | 2005-04-12 | Matrix Semiconductor, Inc. | Word line arrangement having multi-layer word line segments for three-dimensional memory array |
US7335906B2 (en) | 2003-04-03 | 2008-02-26 | Kabushiki Kaisha Toshiba | Phase change memory device |
US7093062B2 (en) | 2003-04-10 | 2006-08-15 | Micron Technology, Inc. | Flash memory data bus for synchronous burst read page |
FR2859041A1 (fr) | 2003-08-18 | 2005-02-25 | St Microelectronics Sa | Circuit memoire a memoire non volatile d'identification et procede associe |
US7369428B2 (en) | 2003-09-29 | 2008-05-06 | Samsung Electronics Co., Ltd. | Methods of operating a magnetic random access memory device and related devices and structures |
US6951780B1 (en) * | 2003-12-18 | 2005-10-04 | Matrix Semiconductor, Inc. | Selective oxidation of silicon in diode, TFT, and monolithic three dimensional memory arrays |
US7068539B2 (en) | 2004-01-27 | 2006-06-27 | Sandisk Corporation | Charge packet metering for coarse/fine programming of non-volatile memory |
US7307884B2 (en) | 2004-06-15 | 2007-12-11 | Sandisk Corporation | Concurrent programming of non-volatile memory |
US7042765B2 (en) * | 2004-08-06 | 2006-05-09 | Freescale Semiconductor, Inc. | Memory bit line segment isolation |
DE102004040750B4 (de) | 2004-08-23 | 2008-03-27 | Qimonda Ag | Speicherzellenanordnung mit Speicherzellen vom CBRAM-Typ und Verfahren zum Programmieren derselben |
CN101057300A (zh) | 2004-09-30 | 2007-10-17 | 斯班逊有限公司 | 半导体装置及其数据写入方法 |
KR100669342B1 (ko) | 2004-12-21 | 2007-01-16 | 삼성전자주식회사 | 낸드 플래시 메모리 장치의 프로그램 방법 |
US7177191B2 (en) * | 2004-12-30 | 2007-02-13 | Sandisk 3D Llc | Integrated circuit including memory array incorporating multiple types of NAND string structures |
US7286439B2 (en) * | 2004-12-30 | 2007-10-23 | Sandisk 3D Llc | Apparatus and method for hierarchical decoding of dense memory arrays using multiple levels of multiple-headed decoders |
US7307268B2 (en) | 2005-01-19 | 2007-12-11 | Sandisk Corporation | Structure and method for biasing phase change memory array for reliable writing |
JP4890016B2 (ja) | 2005-03-16 | 2012-03-07 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
US7359279B2 (en) * | 2005-03-31 | 2008-04-15 | Sandisk 3D Llc | Integrated circuit memory array configuration including decoding compatibility with partial implementation of multiple memory layers |
US7187585B2 (en) | 2005-04-05 | 2007-03-06 | Sandisk Corporation | Read operation for non-volatile storage that includes compensation for coupling |
US7812404B2 (en) | 2005-05-09 | 2010-10-12 | Sandisk 3D Llc | Nonvolatile memory cell comprising a diode and a resistance-switching material |
US20060250836A1 (en) * | 2005-05-09 | 2006-11-09 | Matrix Semiconductor, Inc. | Rewriteable memory cell comprising a diode and a resistance-switching material |
JP4282636B2 (ja) | 2005-06-22 | 2009-06-24 | 株式会社東芝 | 不揮発性半導体記憶装置とそのデータ書き込み方法 |
US7304888B2 (en) | 2005-07-01 | 2007-12-04 | Sandisk 3D Llc | Reverse-bias method for writing memory cells in a memory array |
US7362604B2 (en) | 2005-07-11 | 2008-04-22 | Sandisk 3D Llc | Apparatus and method for programming an array of nonvolatile memory cells including switchable resistor memory elements |
US7426128B2 (en) | 2005-07-11 | 2008-09-16 | Sandisk 3D Llc | Switchable resistive memory with opposite polarity write pulses |
US7652922B2 (en) | 2005-09-30 | 2010-01-26 | Mosaid Technologies Incorporated | Multiple independent serial link memory |
JP2007133927A (ja) * | 2005-11-08 | 2007-05-31 | Toshiba Corp | 半導体記憶装置及びその制御方法 |
US7463546B2 (en) | 2006-07-31 | 2008-12-09 | Sandisk 3D Llc | Method for using a passive element memory array incorporating reversible polarity word line and bit line decoders |
US7499355B2 (en) | 2006-07-31 | 2009-03-03 | Sandisk 3D Llc | High bandwidth one time field-programmable memory |
KR100755409B1 (ko) | 2006-08-28 | 2007-09-04 | 삼성전자주식회사 | 저항 메모리 소자의 프로그래밍 방법 |
US7443712B2 (en) | 2006-09-07 | 2008-10-28 | Spansion Llc | Memory erase management system |
JP4958244B2 (ja) | 2006-09-15 | 2012-06-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7391638B2 (en) | 2006-10-24 | 2008-06-24 | Sandisk 3D Llc | Memory device for protecting memory cells during programming |
US7589989B2 (en) | 2006-10-24 | 2009-09-15 | Sandisk 3D Llc | Method for protecting memory cells during programming |
US7420850B2 (en) | 2006-10-24 | 2008-09-02 | Sandisk 3D Llc | Method for controlling current during programming of memory cells |
US7539062B2 (en) | 2006-12-20 | 2009-05-26 | Micron Technology, Inc. | Interleaved memory program and verify method, device and system |
KR100809339B1 (ko) | 2006-12-20 | 2008-03-05 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치 및 그 구동 방법 |
KR101348173B1 (ko) * | 2007-05-25 | 2014-01-08 | 삼성전자주식회사 | 플래시 메모리 장치, 그것의 소거 및 프로그램 방법들,그리고 그것을 포함한 메모리 시스템 |
US7920408B2 (en) | 2007-06-22 | 2011-04-05 | Panasonic Corporation | Resistance change nonvolatile memory device |
US7778064B2 (en) | 2007-11-07 | 2010-08-17 | Ovonyx, Inc. | Accessing a phase change memory |
JP2009199695A (ja) * | 2008-02-25 | 2009-09-03 | Toshiba Corp | 抵抗変化メモリ装置 |
US7907468B2 (en) * | 2008-05-28 | 2011-03-15 | Micron Technology, Inc. | Memory device having data paths permitting array/port consolidation and swapping |
US7978507B2 (en) | 2008-06-27 | 2011-07-12 | Sandisk 3D, Llc | Pulse reset for non-volatile storage |
US7869258B2 (en) | 2008-06-27 | 2011-01-11 | Sandisk 3D, Llc | Reverse set with current limit for non-volatile storage |
US8111539B2 (en) | 2008-06-27 | 2012-02-07 | Sandisk 3D Llc | Smart detection circuit for writing to non-volatile storage |
US8059447B2 (en) | 2008-06-27 | 2011-11-15 | Sandisk 3D Llc | Capacitive discharge method for writing to non-volatile memory |
US8130528B2 (en) * | 2008-08-25 | 2012-03-06 | Sandisk 3D Llc | Memory system with sectional data lines |
US8027209B2 (en) | 2008-10-06 | 2011-09-27 | Sandisk 3D, Llc | Continuous programming of non-volatile memory |
US8279650B2 (en) | 2009-04-20 | 2012-10-02 | Sandisk 3D Llc | Memory system with data line switching scheme |
-
2009
- 2009-03-25 US US12/410,648 patent/US8130528B2/en active Active
- 2009-07-17 KR KR1020117007003A patent/KR101573509B1/ko active IP Right Grant
- 2009-07-17 CN CN200980133212.4A patent/CN102132352B/zh active Active
- 2009-07-17 EP EP09790573A patent/EP2321826B1/en active Active
- 2009-07-17 JP JP2011525038A patent/JP5318211B2/ja active Active
- 2009-07-17 WO PCT/US2009/050970 patent/WO2010024982A1/en active Application Filing
- 2009-07-17 AT AT09790573T patent/ATE545134T1/de active
- 2009-08-04 TW TW098126194A patent/TWI427642B/zh not_active IP Right Cessation
-
2011
- 2011-04-04 US US13/079,613 patent/US8358528B2/en active Active
-
2012
- 2012-01-31 US US13/362,311 patent/US8913413B2/en active Active
- 2012-01-31 US US13/362,320 patent/US8982597B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2321826B1 (en) | 2012-02-08 |
US8982597B2 (en) | 2015-03-17 |
US20110182105A1 (en) | 2011-07-28 |
CN102132352B (zh) | 2015-07-01 |
US20120170347A1 (en) | 2012-07-05 |
KR101573509B1 (ko) | 2015-12-01 |
US8913413B2 (en) | 2014-12-16 |
WO2010024982A1 (en) | 2010-03-04 |
KR20110069030A (ko) | 2011-06-22 |
US20120170346A1 (en) | 2012-07-05 |
TW201017683A (en) | 2010-05-01 |
ATE545134T1 (de) | 2012-02-15 |
US8358528B2 (en) | 2013-01-22 |
EP2321826A1 (en) | 2011-05-18 |
JP2012501038A (ja) | 2012-01-12 |
TWI427642B (zh) | 2014-02-21 |
CN102132352A (zh) | 2011-07-20 |
US20100046267A1 (en) | 2010-02-25 |
US8130528B2 (en) | 2012-03-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5318211B2 (ja) | 区分データ線を有するメモリシステム | |
EP2606488B1 (en) | Single device driver circuit to control three-dimensional memory element array | |
US7177169B2 (en) | Word line arrangement having multi-layer word line segments for three-dimensional memory array | |
JP5032336B2 (ja) | 複数ヘッドデコーダの複数のレベルを使用した高密度メモリアレイの階層復号化のための機器および方法 | |
US8243493B2 (en) | Resistance change memory device | |
CN101506898A (zh) | 用于并入有可逆极性字线和位线解码器的无源元件存储器阵列的方法和设备 | |
KR20140048115A (ko) | 듀얼 블록 프로그래밍을 이용하는 비-휘발성 스토리지 시스템 | |
US7885100B2 (en) | Phase change random access memory and layout method of the same | |
KR101478193B1 (ko) | 가역 극성 워드 라인과 비트 라인 디코더를 결합한 패시브 엘리먼트 메모리 어레이용 방법과 장치 | |
KR20090057374A (ko) | 메모리 어레이 블록 선택을 위하여 두 개의 데이터 버스를 통합한 메모리 어레이용 방법과 장치 | |
KR20090057373A (ko) | 메모리 어레이에 판독/기입 회로를 결합하기 위한 듀얼 데이터 종속 버스 | |
TW200826114A (en) | Method and apparatus for hierarchical bit line BIAS bus for block selectable memory array |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120227 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130226 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130521 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130618 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130709 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5318211 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |