CN102332288B - 存储器电路及应用所述存储器电路读取数据的方法 - Google Patents
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CN113793628B (zh) * | 2012-12-27 | 2024-06-07 | 英特尔公司 | 电平移位器 |
CN106201902A (zh) * | 2016-06-24 | 2016-12-07 | 中电海康集团有限公司 | 一种sram位元与非易失性存储位元组成的复合阵列模块及其读写控制方法 |
CN107515729A (zh) * | 2016-06-24 | 2017-12-26 | 中电海康集团有限公司 | 一种sram位元与非易失性存储位元组成的复合阵列模块及工作方法 |
CN107643955B (zh) * | 2016-07-27 | 2020-11-06 | 中电海康集团有限公司 | 一种基于纠错回写技术提升非易失存储器性能的方法及非易失存储器结构 |
US10547326B2 (en) * | 2017-01-12 | 2020-01-28 | Proton World International N.V. | Error correction in a flash memory |
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CN1220469A (zh) * | 1997-12-15 | 1999-06-23 | 日本电气株式会社 | 具有芯片错误恢复电路的可编程只读存储器 |
CN100590736C (zh) * | 2002-10-29 | 2010-02-17 | 海力士半导体有限公司 | 数据存取时间降低的半导体存储装置 |
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US8130528B2 (en) * | 2008-08-25 | 2012-03-06 | Sandisk 3D Llc | Memory system with sectional data lines |
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CN1220469A (zh) * | 1997-12-15 | 1999-06-23 | 日本电气株式会社 | 具有芯片错误恢复电路的可编程只读存储器 |
CN100590736C (zh) * | 2002-10-29 | 2010-02-17 | 海力士半导体有限公司 | 数据存取时间降低的半导体存储装置 |
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