CN1906700A - 包含多个串联选择装置的nand存储阵列及其操作方法 - Google Patents

包含多个串联选择装置的nand存储阵列及其操作方法 Download PDF

Info

Publication number
CN1906700A
CN1906700A CNA2004800408960A CN200480040896A CN1906700A CN 1906700 A CN1906700 A CN 1906700A CN A2004800408960 A CNA2004800408960 A CN A2004800408960A CN 200480040896 A CN200480040896 A CN 200480040896A CN 1906700 A CN1906700 A CN 1906700A
Authority
CN
China
Prior art keywords
voltage
integrated circuit
string
nand string
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2004800408960A
Other languages
English (en)
Chinese (zh)
Inventor
陈恩星
安德鲁·J·沃克
罗伊·E·朔伊尔莱因
苏切塔·纳拉姆莫图
阿尔佩尔·伊尔克巴哈尔
卢卡·G·法索利
詹姆斯·M·克里夫斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk 3D LLC
Original Assignee
SanDisk 3D LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk 3D LLC filed Critical SanDisk 3D LLC
Publication of CN1906700A publication Critical patent/CN1906700A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
CNA2004800408960A 2003-12-05 2004-12-02 包含多个串联选择装置的nand存储阵列及其操作方法 Pending CN1906700A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/729,865 US20050128807A1 (en) 2003-12-05 2003-12-05 Nand memory array incorporating multiple series selection devices and method for operation of same
US10/729,865 2003-12-05

Publications (1)

Publication Number Publication Date
CN1906700A true CN1906700A (zh) 2007-01-31

Family

ID=34652706

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2004800408960A Pending CN1906700A (zh) 2003-12-05 2004-12-02 包含多个串联选择装置的nand存储阵列及其操作方法

Country Status (6)

Country Link
US (1) US20050128807A1 (enExample)
EP (1) EP1695356A2 (enExample)
JP (1) JP2007513455A (enExample)
KR (1) KR20070003818A (enExample)
CN (1) CN1906700A (enExample)
WO (1) WO2005057586A2 (enExample)

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102163457A (zh) * 2010-02-18 2011-08-24 三星电子株式会社 非易失性存储器件、其编程方法以及包括其的存储系统
CN101471137B (zh) * 2007-12-27 2012-07-18 海力士半导体有限公司 操作非易失性存储器件的方法
CN101419835B (zh) * 2007-06-12 2013-01-23 三星电子株式会社 具有三维堆叠结构的闪速存储器设备以及驱动其的方法
CN104067348A (zh) * 2012-01-24 2014-09-24 苹果公司 用于模拟存储器单元的编程及擦除方案
US8848456B2 (en) 2010-03-04 2014-09-30 Samsung Electronics Co., Ltd. Nonvolatile memory device, erasing method thereof, and memory system including the same
US8908431B2 (en) 2010-02-17 2014-12-09 Samsung Electronics Co., Ltd. Control method of nonvolatile memory device
US8917558B2 (en) 2010-02-09 2014-12-23 Samsung Electronics Co., Ltd. Nonvolatile memory devices, operating methods thereof and memory systems including the same
US8923060B2 (en) 2010-02-17 2014-12-30 Samsung Electronics Co., Ltd. Nonvolatile memory devices and operating methods thereof
US8923053B2 (en) 2010-02-17 2014-12-30 Samsung Electronics Co., Ltd. Nonvolatile memory device, operating method thereof, and memory system including the same
US8964476B2 (en) 2010-02-17 2015-02-24 Samsung Electronics Co., Ltd. Non-volatile memory devices, operating methods thereof and memory systems including the same
US9324440B2 (en) 2010-02-09 2016-04-26 Samsung Electronics Co., Ltd. Nonvolatile memory devices, operating methods thereof and memory systems including the same
US9378831B2 (en) 2010-02-09 2016-06-28 Samsung Electronics Co., Ltd. Nonvolatile memory devices, operating methods thereof and memory systems including the same
CN102163457B (zh) * 2010-02-18 2016-12-14 三星电子株式会社 非易失性存储器件、其编程方法以及包括其的存储系统
US9741438B2 (en) 2013-09-16 2017-08-22 Samsung Electronics Co., Ltd. Nonvolatile memory device and program method thereof
CN107293322A (zh) * 2010-02-07 2017-10-24 芝诺半导体有限公司 含导通浮体晶体管、并具有永久性和非永久性功能的半导体存储元件及操作方法
US9881685B2 (en) 2010-08-26 2018-01-30 Samsung Electronics Co., Ltd. Nonvolatile memory device, operating method thereof and memory system including the same
CN108292519A (zh) * 2015-12-22 2018-07-17 桑迪士克科技有限责任公司 用于非易失性存储器的子块模式
CN109584921A (zh) * 2013-10-31 2019-04-05 爱思开海力士有限公司 半导体存储器件及其擦除方法
CN110473579A (zh) * 2019-07-11 2019-11-19 中国科学院微电子研究所 三维阻变存储阵列、译码电路以及存储系统
CN111312312A (zh) * 2020-02-19 2020-06-19 无锡中微亿芯有限公司 一种用于p_flash型可编程逻辑器件的配置控制电路
CN111527544A (zh) * 2020-03-23 2020-08-11 长江存储科技有限责任公司 3d nand闪存的操作方法和3d nand闪存
CN113223596A (zh) * 2021-05-25 2021-08-06 长江存储科技有限责任公司 一种三维非易失性存储器及其数据擦除验证方法
CN113948115A (zh) * 2020-07-15 2022-01-18 铁电存储器股份有限公司 存储器单元布置
US11508441B2 (en) 2020-03-23 2022-11-22 Yangtze Memory Technologies Co., Ltd. Memory device and program operation thereof

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7233522B2 (en) 2002-12-31 2007-06-19 Sandisk 3D Llc NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same
US7221588B2 (en) * 2003-12-05 2007-05-22 Sandisk 3D Llc Memory array incorporating memory cells arranged in NAND strings
US20060067127A1 (en) * 2004-09-30 2006-03-30 Matrix Semiconductor, Inc. Method of programming a monolithic three-dimensional memory
KR100645055B1 (ko) * 2004-10-28 2006-11-10 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법
US7298665B2 (en) * 2004-12-30 2007-11-20 Sandisk 3D Llc Dual-mode decoder circuit, integrated circuit memory array incorporating same, and related methods of operation
US7177191B2 (en) * 2004-12-30 2007-02-13 Sandisk 3D Llc Integrated circuit including memory array incorporating multiple types of NAND string structures
US7286439B2 (en) * 2004-12-30 2007-10-23 Sandisk 3D Llc Apparatus and method for hierarchical decoding of dense memory arrays using multiple levels of multiple-headed decoders
US7054219B1 (en) 2005-03-31 2006-05-30 Matrix Semiconductor, Inc. Transistor layout configuration for tight-pitched memory array lines
US7272052B2 (en) * 2005-03-31 2007-09-18 Sandisk 3D Llc Decoding circuit for non-binary groups of memory line drivers
US7359279B2 (en) * 2005-03-31 2008-04-15 Sandisk 3D Llc Integrated circuit memory array configuration including decoding compatibility with partial implementation of multiple memory layers
US7142471B2 (en) * 2005-03-31 2006-11-28 Sandisk 3D Llc Method and apparatus for incorporating block redundancy in a memory array
US7170783B2 (en) * 2005-04-01 2007-01-30 Micron Technology, Inc. Layout for NAND flash memory array having reduced word line impedance
EP1750273B1 (en) * 2005-08-05 2011-12-07 Infineon Technologies AG Memory cell with increased access reliability
US7684781B2 (en) * 2005-11-25 2010-03-23 Semiconductor Energy Laboratory Co., Ltd Semiconductor device
US7912439B2 (en) * 2005-11-25 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method thereof
US20080237694A1 (en) * 2007-03-27 2008-10-02 Michael Specht Integrated circuit, cell, cell arrangement, method for manufacturing an integrated circuit, method for manufacturing a cell, memory module
US7638836B2 (en) * 2007-05-15 2009-12-29 Schiltron Corporation Nonvolatile memory with backplate
KR101422702B1 (ko) 2007-12-28 2014-07-25 삼성전자주식회사 3차원 메모리 장치 및 그것의 프로그램 방법
US7916544B2 (en) * 2008-01-25 2011-03-29 Micron Technology, Inc. Random telegraph signal noise reduction scheme for semiconductor memories
US8458114B2 (en) * 2009-03-02 2013-06-04 Analog Devices, Inc. Analog computation using numerical representations with uncertainty
US8179731B2 (en) * 2009-03-27 2012-05-15 Analog Devices, Inc. Storage devices with soft processing
US8199576B2 (en) * 2009-04-08 2012-06-12 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
US7983065B2 (en) * 2009-04-08 2011-07-19 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
US8351236B2 (en) * 2009-04-08 2013-01-08 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
JP2011040706A (ja) * 2009-07-15 2011-02-24 Toshiba Corp 不揮発性半導体記憶装置
JP2011076678A (ja) * 2009-09-30 2011-04-14 Toshiba Corp 不揮発性半導体記憶装置
US8526237B2 (en) 2010-06-08 2013-09-03 Sandisk 3D Llc Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof
US8547720B2 (en) 2010-06-08 2013-10-01 Sandisk 3D Llc Non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word lines
US20120327714A1 (en) * 2011-06-23 2012-12-27 Macronix International Co., Ltd. Memory Architecture of 3D Array With Diode in Memory String
US8797806B2 (en) * 2011-08-15 2014-08-05 Micron Technology, Inc. Apparatus and methods including source gates
US10541029B2 (en) 2012-08-01 2020-01-21 Micron Technology, Inc. Partial block memory operations
US8921891B2 (en) 2012-08-22 2014-12-30 Micron Technology, Inc. Vertical memory cell string with dielectric in a portion of the body
US9589644B2 (en) * 2012-10-08 2017-03-07 Micron Technology, Inc. Reducing programming disturbance in memory devices
US9379163B1 (en) 2015-03-06 2016-06-28 Kabushiki Kaisha Toshiba Variable resistance memory device
US10438025B2 (en) * 2016-10-04 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Self-destruct SRAM-based authentication circuit
KR102620813B1 (ko) * 2017-01-03 2024-01-04 에스케이하이닉스 주식회사 반도체 장치, 그 동작 방법 및 메모리 시스템
EP3832721A1 (en) 2019-12-06 2021-06-09 Imec VZW A method for fabricating a 3d ferroelectric memory
US11177280B1 (en) 2020-05-18 2021-11-16 Sandisk Technologies Llc Three-dimensional memory device including wrap around word lines and methods of forming the same
WO2022153366A1 (ja) * 2021-01-12 2022-07-21 Tdk株式会社 磁気アレイ、磁気アレイの制御方法及び磁気アレイの制御プログラム
KR102903150B1 (ko) * 2022-07-21 2025-12-29 경북대학교 산학협력단 공핍모드 및 다중 문턱전압을 갖는 mosfet을 사용하는 3진 논리 회로 설계 방법 및 이를 수행하기 위한 장치 및 기록 매체

Family Cites Families (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142176A (en) * 1976-09-27 1979-02-27 Mostek Corporation Series read only memory structure
US4543594A (en) * 1982-09-07 1985-09-24 Intel Corporation Fusible link employing capacitor structure
US4602354A (en) * 1983-01-10 1986-07-22 Ncr Corporation X-and-OR memory array
US4646266A (en) * 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
US4868616A (en) * 1986-12-11 1989-09-19 Energy Conversion Devices, Inc. Amorphous electronic matrix array for liquid crystal display
USRE35838E (en) * 1987-12-28 1998-07-07 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND cell structure
JP2718716B2 (ja) * 1988-09-30 1998-02-25 株式会社東芝 不揮発性半導体メモリ装置およびそのデータ書替え方法
JP2586187B2 (ja) * 1990-07-16 1997-02-26 日本電気株式会社 半導体記憶装置
US5197027A (en) * 1991-01-24 1993-03-23 Nexcom Technology, Inc. Single transistor eeprom architecture
JP3109537B2 (ja) * 1991-07-12 2000-11-20 日本電気株式会社 読み出し専用半導体記憶装置
KR940008204B1 (ko) * 1991-08-14 1994-09-08 삼성전자 주식회사 낸드형 플래쉬 메모리의 과도소거 방지장치 및 방법
US5412493A (en) * 1992-09-25 1995-05-02 Sony Corporation Liquid crystal display device having LDD structure type thin film transistors connected in series
US5644533A (en) * 1992-11-02 1997-07-01 Nvx Corporation Flash memory system, and methods of constructing and utilizing same
KR960000616B1 (ko) * 1993-01-13 1996-01-10 삼성전자주식회사 불휘발성 반도체 메모리 장치
JP3207592B2 (ja) * 1993-03-19 2001-09-10 株式会社東芝 不揮発性半導体記憶装置
US5555204A (en) * 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
JP3192861B2 (ja) * 1994-03-14 2001-07-30 株式会社東芝 不揮発性半導体記憶装置
DE19523775C2 (de) * 1994-06-29 2001-12-06 Toshiba Kawasaki Kk Nichtflüchtige Halbleiterspeichervorrichtung
GB9424598D0 (en) * 1994-12-06 1995-01-25 Philips Electronics Uk Ltd Semiconductor memory with non-volatile memory transistor
US5703382A (en) * 1995-11-20 1997-12-30 Xerox Corporation Array having multiple channel structures with continuously doped interchannel regions
US5514907A (en) * 1995-03-21 1996-05-07 Simple Technology Incorporated Apparatus for stacking semiconductor chips
US5751012A (en) * 1995-06-07 1998-05-12 Micron Technology, Inc. Polysilicon pillar diode for use in a non-volatile memory cell
AU7475196A (en) * 1995-10-25 1997-05-15 Nvx Corporation Semiconductor non-volatile memory device having a nand cell structure
KR100253868B1 (ko) * 1995-11-13 2000-05-01 니시무로 타이죠 불휘발성 반도체기억장치
US5814853A (en) * 1996-01-22 1998-09-29 Advanced Micro Devices, Inc. Sourceless floating gate memory device and method of storing data
WO1997047041A2 (en) * 1996-06-05 1997-12-11 Philips Electronics N.V. Programmable, non-volatile memory device, and method of manufacturing such a device
KR100210846B1 (ko) * 1996-06-07 1999-07-15 구본준 낸드셀 어레이
US5912489A (en) * 1996-06-18 1999-06-15 Advanced Micro Devices, Inc. Dual source side polysilicon select gate structure utilizing single tunnel oxide for NAND array flash memory
US5715194A (en) * 1996-07-24 1998-02-03 Advanced Micro Devices, Inc. Bias scheme of program inhibit for random programming in a nand flash memory
TW338165B (en) * 1996-09-09 1998-08-11 Sony Co Ltd Semiconductor nand type flash memory with incremental step pulse programming
KR100206709B1 (ko) * 1996-09-21 1999-07-01 윤종용 멀티비트 불휘발성 반도체 메모리의 셀 어레이의 구조 및 그의 구동방법
US5835396A (en) * 1996-10-17 1998-11-10 Zhang; Guobiao Three-dimensional read-only memory
JPH10223866A (ja) * 1997-02-03 1998-08-21 Toshiba Corp 半導体記憶装置
KR100272037B1 (ko) * 1997-02-27 2000-12-01 니시무로 타이죠 불휘발성 반도체 기억 장치
JP3489958B2 (ja) * 1997-03-19 2004-01-26 富士通株式会社 不揮発性半導体記憶装置
NO972803D0 (no) * 1997-06-17 1997-06-17 Opticom As Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte
KR19990029775A (ko) * 1997-09-11 1999-04-26 오카모토 세이시 불휘발성 반도체 기억 장치
US6005270A (en) * 1997-11-10 1999-12-21 Sony Corporation Semiconductor nonvolatile memory device and method of production of same
JP3959165B2 (ja) * 1997-11-27 2007-08-15 株式会社東芝 不揮発性半導体記憶装置
KR100297602B1 (ko) * 1997-12-31 2001-08-07 윤종용 비휘발성메모리장치의프로그램방법
JP3999900B2 (ja) * 1998-09-10 2007-10-31 株式会社東芝 不揮発性半導体メモリ
US5991202A (en) * 1998-09-24 1999-11-23 Advanced Micro Devices, Inc. Method for reducing program disturb during self-boosting in a NAND flash memory
US6034882A (en) * 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
JP3866460B2 (ja) * 1998-11-26 2007-01-10 株式会社東芝 不揮発性半導体記憶装置
US6411548B1 (en) * 1999-07-13 2002-06-25 Kabushiki Kaisha Toshiba Semiconductor memory having transistors connected in series
JP2001028427A (ja) * 1999-07-14 2001-01-30 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP3863330B2 (ja) * 1999-09-28 2006-12-27 株式会社東芝 不揮発性半導体メモリ
JP4899241B2 (ja) * 1999-12-06 2012-03-21 ソニー株式会社 不揮発性半導体記憶装置およびその動作方法
US6888750B2 (en) * 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
US6856572B2 (en) * 2000-04-28 2005-02-15 Matrix Semiconductor, Inc. Multi-headed decoder structure utilizing memory array line driver with dual purpose driver device
US6567287B2 (en) * 2001-03-21 2003-05-20 Matrix Semiconductor, Inc. Memory device with row and column decoder circuits arranged in a checkerboard pattern under a plurality of memory arrays
US6420215B1 (en) * 2000-04-28 2002-07-16 Matrix Semiconductor, Inc. Three-dimensional memory array and method of fabrication
JP4002712B2 (ja) * 2000-05-15 2007-11-07 スパンション エルエルシー 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ保持方法
JP3810985B2 (ja) * 2000-05-22 2006-08-16 株式会社東芝 不揮発性半導体メモリ
JP4477199B2 (ja) * 2000-06-16 2010-06-09 株式会社ルネサステクノロジ 磁気ランダムアクセスメモリ、磁気ランダムアクセスメモリへのアクセス方法および磁気ランダムアクセスメモリの製造方法
JP3672803B2 (ja) * 2000-07-28 2005-07-20 Ｎｅｃエレクトロニクス株式会社 不揮発性記憶装置
JP5792918B2 (ja) * 2000-08-14 2015-10-14 サンディスク・スリー・ディ・リミテッド・ライアビリティ・カンパニーＳａｎｄｉｓｋ ３Ｄ Ｌｌｃ 高集積メモリデバイス
US6515888B2 (en) * 2000-08-14 2003-02-04 Matrix Semiconductor, Inc. Low cost three-dimensional memory array
US6335890B1 (en) * 2000-11-01 2002-01-01 International Business Machines Corporation Segmented write line architecture for writing magnetic random access memories
JP3730508B2 (ja) * 2000-11-13 2006-01-05 株式会社東芝 半導体記憶装置およびその動作方法
KR100385226B1 (ko) * 2000-11-22 2003-05-27 삼성전자주식회사 프로그램 디스터브를 방지할 수 있는 플래시 메모리 장치및 그것을 프로그램하는 방법
US6326269B1 (en) * 2000-12-08 2001-12-04 Macronix International Co., Ltd. Method of fabricating self-aligned multilevel mask ROM
KR100385230B1 (ko) * 2000-12-28 2003-05-27 삼성전자주식회사 불휘발성 반도체 메모리 장치의 프로그램 방법
US6611453B2 (en) * 2001-01-24 2003-08-26 Infineon Technologies Ag Self-aligned cross-point MRAM device with aluminum metallization layers
US6490194B2 (en) * 2001-01-24 2002-12-03 Infineon Technologies Ag Serial MRAM device
US6512694B2 (en) * 2001-03-16 2003-01-28 Simtek Corporation NAND stack EEPROM with random programming capability
US6545898B1 (en) * 2001-03-21 2003-04-08 Silicon Valley Bank Method and apparatus for writing memory arrays using external source of high programming voltage
JP3829088B2 (ja) * 2001-03-29 2006-10-04 株式会社東芝 半導体記憶装置
JP4796238B2 (ja) * 2001-04-27 2011-10-19 Ｏｋｉセミコンダクタ株式会社 ワード線駆動回路
US6671204B2 (en) * 2001-07-23 2003-12-30 Samsung Electronics Co., Ltd. Nonvolatile memory device with page buffer having dual registers and methods of using the same
US6597609B2 (en) * 2001-08-30 2003-07-22 Micron Technology, Inc. Non-volatile memory with test rows for disturb detection
US6473328B1 (en) * 2001-08-30 2002-10-29 Micron Technology, Inc. Three-dimensional magnetic memory array with a minimal number of access conductors therein
US6456528B1 (en) * 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6925007B2 (en) * 2001-10-31 2005-08-02 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US6542407B1 (en) * 2002-01-18 2003-04-01 Sandisk Corporation Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
US6498747B1 (en) * 2002-02-08 2002-12-24 Infineon Technologies Ag Magnetoresistive random access memory (MRAM) cross-point array with reduced parasitic effects
US20030155582A1 (en) * 2002-02-19 2003-08-21 Maitreyee Mahajani Gate dielectric structures for integrated circuits and methods for making and using such gate dielectric structures
US6853587B2 (en) * 2002-06-21 2005-02-08 Micron Technology, Inc. Vertical NROM having a storage density of 1 bit per 1F2
US6859410B2 (en) * 2002-11-27 2005-02-22 Matrix Semiconductor, Inc. Tree decoder structure particularly well-suited to interfacing array lines having extremely small layout pitch
JP3863485B2 (ja) * 2002-11-29 2006-12-27 株式会社東芝 不揮発性半導体記憶装置
US6849905B2 (en) * 2002-12-23 2005-02-01 Matrix Semiconductor, Inc. Semiconductor device with localized charge storage dielectric and method of making same
US7505321B2 (en) * 2002-12-31 2009-03-17 Sandisk 3D Llc Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same
US7233522B2 (en) * 2002-12-31 2007-06-19 Sandisk 3D Llc NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same
US6960794B2 (en) * 2002-12-31 2005-11-01 Matrix Semiconductor, Inc. Formation of thin channels for TFT devices to ensure low variability of threshold voltages
US7005350B2 (en) * 2002-12-31 2006-02-28 Matrix Semiconductor, Inc. Method for fabricating programmable memory array structures incorporating series-connected transistor strings
JP2004241558A (ja) * 2003-02-05 2004-08-26 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法、半導体集積回路及び不揮発性半導体記憶装置システム
US6822903B2 (en) * 2003-03-31 2004-11-23 Matrix Semiconductor, Inc. Apparatus and method for disturb-free programming of passive element memory cells
US6977842B2 (en) * 2003-09-16 2005-12-20 Micron Technology, Inc. Boosted substrate/tub programming for flash memories
US7423304B2 (en) * 2003-12-05 2008-09-09 Sandisck 3D Llc Optimization of critical dimensions and pitch of patterned features in and above a substrate

Cited By (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101419835B (zh) * 2007-06-12 2013-01-23 三星电子株式会社 具有三维堆叠结构的闪速存储器设备以及驱动其的方法
CN101471137B (zh) * 2007-12-27 2012-07-18 海力士半导体有限公司 操作非易失性存储器件的方法
CN107293322B (zh) * 2010-02-07 2021-09-21 芝诺半导体有限公司 含导通浮体晶体管、并具有永久性和非永久性功能的半导体存储元件及操作方法
CN107293322A (zh) * 2010-02-07 2017-10-24 芝诺半导体有限公司 含导通浮体晶体管、并具有永久性和非永久性功能的半导体存储元件及操作方法
US9324440B2 (en) 2010-02-09 2016-04-26 Samsung Electronics Co., Ltd. Nonvolatile memory devices, operating methods thereof and memory systems including the same
US10217516B2 (en) 2010-02-09 2019-02-26 Samsung Electronics Co., Ltd. Nonvolatile memory devices, operating methods thereof and memory systems including the same
US8917558B2 (en) 2010-02-09 2014-12-23 Samsung Electronics Co., Ltd. Nonvolatile memory devices, operating methods thereof and memory systems including the same
US9378833B2 (en) 2010-02-09 2016-06-28 Samsung Electronics Co., Ltd. Nonvolatile memory devices, operating methods thereof and memory systems including the same
US9378831B2 (en) 2010-02-09 2016-06-28 Samsung Electronics Co., Ltd. Nonvolatile memory devices, operating methods thereof and memory systems including the same
US9330769B2 (en) 2010-02-09 2016-05-03 Samsung Electronics Co., Ltd. Nonvolatile memory devices, operating methods thereof and memory systems including the same
US9147492B2 (en) 2010-02-17 2015-09-29 Samsung Electronics Co., Ltd. Control method of nonvolatile memory device
US11715537B2 (en) 2010-02-17 2023-08-01 Samsung Electronics Co., Ltd. Non-volatile memory devices, operating methods thereof and memory systems including the same
US8964476B2 (en) 2010-02-17 2015-02-24 Samsung Electronics Co., Ltd. Non-volatile memory devices, operating methods thereof and memory systems including the same
US11062784B2 (en) 2010-02-17 2021-07-13 Samsung Electronics Co., Ltd. Non-volatile memory devices, operating methods thereof and memory systems including the same
US9330770B2 (en) 2010-02-17 2016-05-03 Samsung Electronics Co., Ltd. Non-volatile memory devices, operating methods thereof and memory systems including the same
US8923053B2 (en) 2010-02-17 2014-12-30 Samsung Electronics Co., Ltd. Nonvolatile memory device, operating method thereof, and memory system including the same
US8923060B2 (en) 2010-02-17 2014-12-30 Samsung Electronics Co., Ltd. Nonvolatile memory devices and operating methods thereof
US9390803B2 (en) 2010-02-17 2016-07-12 Samsung Electronics Co., Ltd. Non-volatile memory devices, operating methods thereof and memory systems including the same
US10199116B2 (en) 2010-02-17 2019-02-05 Samsung Electronics Co., Ltd. Non-volatile memory devices, operating methods thereof and memory systems including the same
US10650903B2 (en) 2010-02-17 2020-05-12 Samsung Electronics Co., Ltd. Non-volatile memory devices, operating methods thereof and memory systems including the same
US12322457B2 (en) 2010-02-17 2025-06-03 Samsung Electronics Co., Ltd. Nonvolatile memory devices, operating methods thereof and memory systems including the same
US9747995B2 (en) 2010-02-17 2017-08-29 Samsung Electronics Co., Ltd. Nonvolatile memory devices, operating methods thereof and memory systems including the same
US8908431B2 (en) 2010-02-17 2014-12-09 Samsung Electronics Co., Ltd. Control method of nonvolatile memory device
CN102163457A (zh) * 2010-02-18 2011-08-24 三星电子株式会社 非易失性存储器件、其编程方法以及包括其的存储系统
CN102163457B (zh) * 2010-02-18 2016-12-14 三星电子株式会社 非易失性存储器件、其编程方法以及包括其的存储系统
US8929145B2 (en) 2010-02-18 2015-01-06 Samsung Electronics Co., Ltd. Nonvolatile memory device, programming method thereof and memory system including the same
US8848456B2 (en) 2010-03-04 2014-09-30 Samsung Electronics Co., Ltd. Nonvolatile memory device, erasing method thereof, and memory system including the same
US9947416B2 (en) 2010-08-26 2018-04-17 Samsung Electronics Co., Ltd. Nonvolatile memory device, operating method thereof and memory system including the same
US9881685B2 (en) 2010-08-26 2018-01-30 Samsung Electronics Co., Ltd. Nonvolatile memory device, operating method thereof and memory system including the same
CN104067348B (zh) * 2012-01-24 2017-04-05 苹果公司 用于模拟存储器单元的编程及擦除方案
CN104067348A (zh) * 2012-01-24 2014-09-24 苹果公司 用于模拟存储器单元的编程及擦除方案
US9741438B2 (en) 2013-09-16 2017-08-22 Samsung Electronics Co., Ltd. Nonvolatile memory device and program method thereof
CN109584921A (zh) * 2013-10-31 2019-04-05 爱思开海力士有限公司 半导体存储器件及其擦除方法
CN109584921B (zh) * 2013-10-31 2023-08-22 爱思开海力士有限公司 半导体存储器件及其擦除方法
CN108292519A (zh) * 2015-12-22 2018-07-17 桑迪士克科技有限责任公司 用于非易失性存储器的子块模式
CN108292519B (zh) * 2015-12-22 2021-10-22 桑迪士克科技有限责任公司 用于非易失性存储器的子块模式
CN110473579A (zh) * 2019-07-11 2019-11-19 中国科学院微电子研究所 三维阻变存储阵列、译码电路以及存储系统
CN111312312A (zh) * 2020-02-19 2020-06-19 无锡中微亿芯有限公司 一种用于p_flash型可编程逻辑器件的配置控制电路
CN111312312B (zh) * 2020-02-19 2021-10-15 无锡中微亿芯有限公司 一种用于p_flash型可编程逻辑器件的配置控制电路
US11158383B2 (en) 2020-03-23 2021-10-26 Yangtze Memory Technologies Co., Ltd. Operation method for 3D NAND flash and 3D NAND flash
US11508441B2 (en) 2020-03-23 2022-11-22 Yangtze Memory Technologies Co., Ltd. Memory device and program operation thereof
US12211554B2 (en) 2020-03-23 2025-01-28 Yangtze Memory Technologies Co., Ltd. Memory device and program operation thereof
CN111527544A (zh) * 2020-03-23 2020-08-11 长江存储科技有限责任公司 3d nand闪存的操作方法和3d nand闪存
CN113948115B (zh) * 2020-07-15 2023-07-21 铁电存储器股份有限公司 存储器单元布置
CN113948115A (zh) * 2020-07-15 2022-01-18 铁电存储器股份有限公司 存储器单元布置
CN113223596A (zh) * 2021-05-25 2021-08-06 长江存储科技有限责任公司 一种三维非易失性存储器及其数据擦除验证方法

Also Published As

Publication number Publication date
US20050128807A1 (en) 2005-06-16
WO2005057586A3 (en) 2005-09-09
KR20070003818A (ko) 2007-01-05
EP1695356A2 (en) 2006-08-30
JP2007513455A (ja) 2007-05-24
WO2005057586A2 (en) 2005-06-23

Similar Documents

Publication Publication Date Title
CN1906700A (zh) 包含多个串联选择装置的nand存储阵列及其操作方法
US7023739B2 (en) NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same
US7221588B2 (en) Memory array incorporating memory cells arranged in NAND strings
US7233522B2 (en) NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same
US7149124B2 (en) Boosted substrate/tub programming for flash memories
US7457156B2 (en) NAND flash depletion cell structure
US7292476B2 (en) Programming method for NAND EEPROM
US9595336B2 (en) Vertical gate stacked NAND and row decoder for erase operation
CN105374395B (zh) 存储器元件及其操作方法
CN101627436B (zh) 用于最小化闪存存储器nand串中编程干扰的方法
CN112634966B (zh) 对存储器件进行编程的方法及相关存储器件
US10090056B2 (en) Semiconductor memory device
CN103915117A (zh) 一种具有三维与非门阵列的快闪存储装置及其操作方法
CN1930633A (zh) 用于非易失性存储器的粗略/精细编程的电荷包计量
CN1875429A (zh) 具有依赖邻近工作模式位线补偿的非易失性存储器及方法
CN1391231A (zh) 非易失性半导体存储装置的编程方法
CN110853692A (zh) 存储器装置在编程期间的操作
CN104217758A (zh) 非易失性存储器件
WO2004061861A2 (en) Nand memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication