JP2007504664A5 - - Google Patents

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Publication number
JP2007504664A5
JP2007504664A5 JP2006525382A JP2006525382A JP2007504664A5 JP 2007504664 A5 JP2007504664 A5 JP 2007504664A5 JP 2006525382 A JP2006525382 A JP 2006525382A JP 2006525382 A JP2006525382 A JP 2006525382A JP 2007504664 A5 JP2007504664 A5 JP 2007504664A5
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JP
Japan
Prior art keywords
degrees
alignment
alignment mark
diagonal line
reticle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006525382A
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English (en)
Japanese (ja)
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JP2007504664A (ja
Filing date
Publication date
Priority claimed from US10/653,309 external-priority patent/US7001830B2/en
Application filed filed Critical
Publication of JP2007504664A publication Critical patent/JP2007504664A/ja
Publication of JP2007504664A5 publication Critical patent/JP2007504664A5/ja
Pending legal-status Critical Current

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JP2006525382A 2003-09-02 2004-08-30 Ｘイニシアティブレイアウト設計のためのパターン認識および方法のための構造 Pending JP2007504664A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/653,309 US7001830B2 (en) 2003-09-02 2003-09-02 System and method of pattern recognition and metrology structure for an X-initiative layout design
PCT/US2004/028194 WO2005022269A2 (en) 2003-09-02 2004-08-30 Pattern recognition and metrology structure for an x-initiative layout design

Publications (2)

Publication Number Publication Date
JP2007504664A JP2007504664A (ja) 2007-03-01
JP2007504664A5 true JP2007504664A5 (enExample) 2007-10-18

Family

ID=34217862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006525382A Pending JP2007504664A (ja) 2003-09-02 2004-08-30 Ｘイニシアティブレイアウト設計のためのパターン認識および方法のための構造

Country Status (7)

Country Link
US (2) US7001830B2 (enExample)
EP (1) EP1660948A2 (enExample)
JP (1) JP2007504664A (enExample)
KR (1) KR101138449B1 (enExample)
CN (1) CN100538532C (enExample)
TW (1) TWI348728B (enExample)
WO (1) WO2005022269A2 (enExample)

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US7084413B2 (en) * 2002-08-08 2006-08-01 Micron Technology, Inc. Photolithographic techniques for producing angled lines
KR100578916B1 (ko) * 2003-12-19 2006-05-11 삼성에스디아이 주식회사 옵셋공정의 얼라인 마크 형성방법 및 그 장치
US7363601B2 (en) * 2004-10-15 2008-04-22 International Business Machines Corporation Integrated circuit selective scaling
US20100015534A1 (en) * 2008-07-17 2010-01-21 Chien-Min Wu Method for monitoring photolithography process and monitor mark
US8143731B2 (en) * 2009-07-14 2012-03-27 Nanya Technology Corp. Integrated alignment and overlay mark
US9117775B2 (en) * 2011-05-25 2015-08-25 Texas Instruments Incorporated Alignment to multiple layers
US8781211B2 (en) 2011-12-22 2014-07-15 Kla-Tencor Corporation Rotational multi-layer overlay marks, apparatus, and methods
US9134628B2 (en) * 2012-01-13 2015-09-15 Nanya Technology Corporation Overlay mark and application thereof
CN103063185B (zh) * 2012-12-31 2017-04-19 中国电子科技集团公司第四十五研究所 单点确定晶圆测试范围的方法
US9136223B2 (en) * 2013-07-26 2015-09-15 Globalfoundries Inc. Forming alignment mark and resulting mark
CN104416461A (zh) * 2013-09-02 2015-03-18 无锡华润上华科技有限公司 Cmp研磨速率的精确量测方法
US9518932B2 (en) * 2013-11-06 2016-12-13 Kla-Tencor Corp. Metrology optimized inspection
CN112485971B (zh) 2015-04-21 2024-12-03 科磊股份有限公司 用于倾斜装置设计的计量目标设计
CN105204299B (zh) * 2015-10-14 2018-06-26 上海华力微电子有限公司 对准精度测量的图形结构
US10692227B2 (en) * 2017-01-05 2020-06-23 Kla-Tencor Corporation Determination of sampling maps for alignment measurements based on reduction of out of specification points
CN110191568B (zh) * 2018-02-22 2022-05-13 奥特斯奥地利科技与系统技术有限公司 使用物理对准标记和虚拟对准标记进行对准
US10446367B2 (en) * 2018-03-07 2019-10-15 Kla-Tencor Corporation Scan strategies to minimize charging effects and radiation damage of charged particle beam metrology system
KR102625260B1 (ko) * 2018-09-20 2024-01-16 삼성디스플레이 주식회사 마스크 기판 검사 시스템
CN111413847A (zh) * 2019-01-08 2020-07-14 长鑫存储技术有限公司 光掩膜以及光刻光学式叠对标记测量方法
US11302030B2 (en) * 2020-05-14 2022-04-12 Kla Corporation System, method, and target for wafer alignment
US11959961B2 (en) 2022-04-08 2024-04-16 Orbotech Ltd. Method of determining an X and Y location of a surface particle
CN116753837B (zh) * 2023-06-25 2025-09-23 天津大学 一种用于波导器件测试的芯片空间映射定位方法
TWI885805B (zh) * 2024-03-15 2025-06-01 利易達半導體設備股份有限公司 用於半導體微影製程的對位系統及對位方法

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US3861798A (en) 1972-05-22 1975-01-21 Hitachi Ltd Mask for aligning patterns
JPH0616476B2 (ja) * 1984-05-11 1994-03-02 株式会社ニコン パターン露光方法
JPS62126634A (ja) * 1985-11-28 1987-06-08 Canon Inc 半導体ウエハの位置合せマ−ク
JPS62173716A (ja) * 1986-01-27 1987-07-30 Matsushita Electric Works Ltd マスク合わせ方法
JPS62286224A (ja) * 1986-06-04 1987-12-12 Fuji Electric Co Ltd 半導体装置の製造方法
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JP2773708B2 (ja) * 1995-10-31 1998-07-09 日本電気株式会社 露光用マスク
JP2870461B2 (ja) * 1995-12-18 1999-03-17 日本電気株式会社 フォトマスクの目合わせマーク及び半導体装置
WO1999056308A1 (en) * 1998-04-28 1999-11-04 Nikon Corporation Exposure system and method of manufacturing micro device
US6728008B1 (en) * 1998-09-04 2004-04-27 Kabushiki Kaisha Toshiba Method for diagnosing optical devices installed in image reading apparatus and image forming apparatus
US6269322B1 (en) 1999-03-11 2001-07-31 Advanced Micro Devices, Inc. System and method for wafer alignment which mitigates effects of reticle rotation and magnification on overlay
US6084679A (en) 1999-04-02 2000-07-04 Advanced Micro Devices, Inc. Universal alignment marks for semiconductor defect capture and analysis
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JP2001051402A (ja) * 1999-08-06 2001-02-23 Hitachi Denshi Ltd フォトマスクの位置合わせ用バーニアおよびその構成方法
US6342735B1 (en) 1999-09-01 2002-01-29 International Business Machines Corporation Dual use alignment aid
TW563178B (en) * 2001-05-07 2003-11-21 Nikon Corp Optical properties measurement method, exposure method, and device manufacturing method

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