CN100538532C - 用于x-架构布局设计的图样识别及度量结构 - Google Patents

用于x-架构布局设计的图样识别及度量结构 Download PDF

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Publication number
CN100538532C
CN100538532C CNB2004800252149A CN200480025214A CN100538532C CN 100538532 C CN100538532 C CN 100538532C CN B2004800252149 A CNB2004800252149 A CN B2004800252149A CN 200480025214 A CN200480025214 A CN 200480025214A CN 100538532 C CN100538532 C CN 100538532C
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CN
China
Prior art keywords
wafer
alignment mark
alignment
diagonal line
line
Prior art date
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Expired - Lifetime
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CNB2004800252149A
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English (en)
Chinese (zh)
Other versions
CN1879064A (zh
Inventor
K·A·潘
B·兰加拉赞
B·辛格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries US Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of CN1879064A publication Critical patent/CN1879064A/zh
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Publication of CN100538532C publication Critical patent/CN100538532C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/975—Substrate or mask aligning feature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNB2004800252149A 2003-09-02 2004-08-30 用于x-架构布局设计的图样识别及度量结构 Expired - Lifetime CN100538532C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/653,309 2003-09-02
US10/653,309 US7001830B2 (en) 2003-09-02 2003-09-02 System and method of pattern recognition and metrology structure for an X-initiative layout design

Publications (2)

Publication Number Publication Date
CN1879064A CN1879064A (zh) 2006-12-13
CN100538532C true CN100538532C (zh) 2009-09-09

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CNB2004800252149A Expired - Lifetime CN100538532C (zh) 2003-09-02 2004-08-30 用于x-架构布局设计的图样识别及度量结构

Country Status (7)

Country Link
US (2) US7001830B2 (enExample)
EP (1) EP1660948A2 (enExample)
JP (1) JP2007504664A (enExample)
KR (1) KR101138449B1 (enExample)
CN (1) CN100538532C (enExample)
TW (1) TWI348728B (enExample)
WO (1) WO2005022269A2 (enExample)

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US7084413B2 (en) * 2002-08-08 2006-08-01 Micron Technology, Inc. Photolithographic techniques for producing angled lines
KR100578916B1 (ko) * 2003-12-19 2006-05-11 삼성에스디아이 주식회사 옵셋공정의 얼라인 마크 형성방법 및 그 장치
US7363601B2 (en) * 2004-10-15 2008-04-22 International Business Machines Corporation Integrated circuit selective scaling
US20100015534A1 (en) * 2008-07-17 2010-01-21 Chien-Min Wu Method for monitoring photolithography process and monitor mark
US8143731B2 (en) * 2009-07-14 2012-03-27 Nanya Technology Corp. Integrated alignment and overlay mark
US9117775B2 (en) * 2011-05-25 2015-08-25 Texas Instruments Incorporated Alignment to multiple layers
US8781211B2 (en) 2011-12-22 2014-07-15 Kla-Tencor Corporation Rotational multi-layer overlay marks, apparatus, and methods
US9134628B2 (en) * 2012-01-13 2015-09-15 Nanya Technology Corporation Overlay mark and application thereof
CN103063185B (zh) * 2012-12-31 2017-04-19 中国电子科技集团公司第四十五研究所 单点确定晶圆测试范围的方法
US9136223B2 (en) * 2013-07-26 2015-09-15 Globalfoundries Inc. Forming alignment mark and resulting mark
CN104416461A (zh) * 2013-09-02 2015-03-18 无锡华润上华科技有限公司 Cmp研磨速率的精确量测方法
US9518932B2 (en) * 2013-11-06 2016-12-13 Kla-Tencor Corp. Metrology optimized inspection
CN112485971B (zh) 2015-04-21 2024-12-03 科磊股份有限公司 用于倾斜装置设计的计量目标设计
CN105204299B (zh) * 2015-10-14 2018-06-26 上海华力微电子有限公司 对准精度测量的图形结构
US10692227B2 (en) * 2017-01-05 2020-06-23 Kla-Tencor Corporation Determination of sampling maps for alignment measurements based on reduction of out of specification points
CN110191568B (zh) * 2018-02-22 2022-05-13 奥特斯奥地利科技与系统技术有限公司 使用物理对准标记和虚拟对准标记进行对准
US10446367B2 (en) * 2018-03-07 2019-10-15 Kla-Tencor Corporation Scan strategies to minimize charging effects and radiation damage of charged particle beam metrology system
KR102625260B1 (ko) * 2018-09-20 2024-01-16 삼성디스플레이 주식회사 마스크 기판 검사 시스템
CN111413847A (zh) * 2019-01-08 2020-07-14 长鑫存储技术有限公司 光掩膜以及光刻光学式叠对标记测量方法
US11302030B2 (en) * 2020-05-14 2022-04-12 Kla Corporation System, method, and target for wafer alignment
US11959961B2 (en) 2022-04-08 2024-04-16 Orbotech Ltd. Method of determining an X and Y location of a surface particle
CN116753837B (zh) * 2023-06-25 2025-09-23 天津大学 一种用于波导器件测试的芯片空间映射定位方法
TWI885805B (zh) * 2024-03-15 2025-06-01 利易達半導體設備股份有限公司 用於半導體微影製程的對位系統及對位方法

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US5049925A (en) * 1990-04-20 1991-09-17 Micron Technology, Inc. Method and apparatus for focusing a wafer stepper
US6342735B1 (en) * 1999-09-01 2002-01-29 International Business Machines Corporation Dual use alignment aid

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JPS62126634A (ja) * 1985-11-28 1987-06-08 Canon Inc 半導体ウエハの位置合せマ−ク
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JPH02119116A (ja) * 1988-10-28 1990-05-07 Hitachi Ltd 半導体集積回路装置の製造方法及びそれに使用する露光装置
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JP2870461B2 (ja) * 1995-12-18 1999-03-17 日本電気株式会社 フォトマスクの目合わせマーク及び半導体装置
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US6342735B1 (en) * 1999-09-01 2002-01-29 International Business Machines Corporation Dual use alignment aid

Also Published As

Publication number Publication date
US7221060B1 (en) 2007-05-22
KR101138449B1 (ko) 2012-04-26
CN1879064A (zh) 2006-12-13
TW200518177A (en) 2005-06-01
US7001830B2 (en) 2006-02-21
KR20060118428A (ko) 2006-11-23
JP2007504664A (ja) 2007-03-01
EP1660948A2 (en) 2006-05-31
WO2005022269A3 (en) 2005-04-21
US20050048741A1 (en) 2005-03-03
TWI348728B (en) 2011-09-11
WO2005022269A2 (en) 2005-03-10

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Owner name: GLOBALFOUNDRIES INC.

Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC.

Effective date: 20100730

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Patentee after: GLOBALFOUNDRIES Inc.

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Patentee before: ADVANCED MICRO DEVICES, Inc.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210302

Address after: California, USA

Patentee after: Lattice chip (USA) integrated circuit technology Co.,Ltd.

Address before: Greater Cayman Islands, British Cayman Islands

Patentee before: GLOBALFOUNDRIES Inc.

CX01 Expiry of patent term

Granted publication date: 20090909

CX01 Expiry of patent term