CN100538532C - 用于x-架构布局设计的图样识别及度量结构 - Google Patents
用于x-架构布局设计的图样识别及度量结构 Download PDFInfo
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- CN100538532C CN100538532C CNB2004800252149A CN200480025214A CN100538532C CN 100538532 C CN100538532 C CN 100538532C CN B2004800252149 A CNB2004800252149 A CN B2004800252149A CN 200480025214 A CN200480025214 A CN 200480025214A CN 100538532 C CN100538532 C CN 100538532C
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/975—Substrate or mask aligning feature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/653,309 US7001830B2 (en) | 2003-09-02 | 2003-09-02 | System and method of pattern recognition and metrology structure for an X-initiative layout design |
US10/653,309 | 2003-09-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1879064A CN1879064A (zh) | 2006-12-13 |
CN100538532C true CN100538532C (zh) | 2009-09-09 |
Family
ID=34217862
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800252149A Active CN100538532C (zh) | 2003-09-02 | 2004-08-30 | 用于x-架构布局设计的图样识别及度量结构 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7001830B2 (zh) |
EP (1) | EP1660948A2 (zh) |
JP (1) | JP2007504664A (zh) |
KR (1) | KR101138449B1 (zh) |
CN (1) | CN100538532C (zh) |
TW (1) | TWI348728B (zh) |
WO (1) | WO2005022269A2 (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7084413B2 (en) * | 2002-08-08 | 2006-08-01 | Micron Technology, Inc. | Photolithographic techniques for producing angled lines |
KR100578916B1 (ko) * | 2003-12-19 | 2006-05-11 | 삼성에스디아이 주식회사 | 옵셋공정의 얼라인 마크 형성방법 및 그 장치 |
US7363601B2 (en) * | 2004-10-15 | 2008-04-22 | International Business Machines Corporation | Integrated circuit selective scaling |
US20100015534A1 (en) * | 2008-07-17 | 2010-01-21 | Chien-Min Wu | Method for monitoring photolithography process and monitor mark |
US8143731B2 (en) * | 2009-07-14 | 2012-03-27 | Nanya Technology Corp. | Integrated alignment and overlay mark |
US9117775B2 (en) * | 2011-05-25 | 2015-08-25 | Texas Instruments Incorporated | Alignment to multiple layers |
US8781211B2 (en) * | 2011-12-22 | 2014-07-15 | Kla-Tencor Corporation | Rotational multi-layer overlay marks, apparatus, and methods |
US9134628B2 (en) * | 2012-01-13 | 2015-09-15 | Nanya Technology Corporation | Overlay mark and application thereof |
CN103063185B (zh) * | 2012-12-31 | 2017-04-19 | 中国电子科技集团公司第四十五研究所 | 单点确定晶圆测试范围的方法 |
US9136223B2 (en) * | 2013-07-26 | 2015-09-15 | Globalfoundries Inc. | Forming alignment mark and resulting mark |
CN104416461A (zh) * | 2013-09-02 | 2015-03-18 | 无锡华润上华科技有限公司 | Cmp研磨速率的精确量测方法 |
US9518932B2 (en) * | 2013-11-06 | 2016-12-13 | Kla-Tencor Corp. | Metrology optimized inspection |
KR20230110835A (ko) | 2015-04-21 | 2023-07-25 | 케이엘에이 코포레이션 | 기울어진 디바이스 설계를 위한 계측 타겟 설계 |
CN105204299B (zh) * | 2015-10-14 | 2018-06-26 | 上海华力微电子有限公司 | 对准精度测量的图形结构 |
US10692227B2 (en) * | 2017-01-05 | 2020-06-23 | Kla-Tencor Corporation | Determination of sampling maps for alignment measurements based on reduction of out of specification points |
CN110191568B (zh) * | 2018-02-22 | 2022-05-13 | 奥特斯奥地利科技与系统技术有限公司 | 使用物理对准标记和虚拟对准标记进行对准 |
US10446367B2 (en) | 2018-03-07 | 2019-10-15 | Kla-Tencor Corporation | Scan strategies to minimize charging effects and radiation damage of charged particle beam metrology system |
KR102625260B1 (ko) * | 2018-09-20 | 2024-01-16 | 삼성디스플레이 주식회사 | 마스크 기판 검사 시스템 |
CN111413847A (zh) * | 2019-01-08 | 2020-07-14 | 长鑫存储技术有限公司 | 光掩膜以及光刻光学式叠对标记测量方法 |
US11302030B2 (en) * | 2020-05-14 | 2022-04-12 | Kla Corporation | System, method, and target for wafer alignment |
US11959961B2 (en) | 2022-04-08 | 2024-04-16 | Orbotech Ltd. | Method of determining an X and Y location of a surface particle |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3861798A (en) | 1972-05-22 | 1975-01-21 | Hitachi Ltd | Mask for aligning patterns |
JPH0616476B2 (ja) * | 1984-05-11 | 1994-03-02 | 株式会社ニコン | パターン露光方法 |
JPS62126634A (ja) * | 1985-11-28 | 1987-06-08 | Canon Inc | 半導体ウエハの位置合せマ−ク |
JPS62173716A (ja) * | 1986-01-27 | 1987-07-30 | Matsushita Electric Works Ltd | マスク合わせ方法 |
JPS62286224A (ja) * | 1986-06-04 | 1987-12-12 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
JPS63311798A (ja) * | 1987-06-15 | 1988-12-20 | Hitachi Ltd | 位置合せマ−ク |
JPH02119116A (ja) * | 1988-10-28 | 1990-05-07 | Hitachi Ltd | 半導体集積回路装置の製造方法及びそれに使用する露光装置 |
JP2587292B2 (ja) * | 1989-04-14 | 1997-03-05 | キヤノン株式会社 | 投影露光装置 |
US5049925A (en) | 1990-04-20 | 1991-09-17 | Micron Technology, Inc. | Method and apparatus for focusing a wafer stepper |
JPH0513306A (ja) * | 1991-07-03 | 1993-01-22 | Fujitsu Ltd | マスク位置測定装置 |
JP2773708B2 (ja) * | 1995-10-31 | 1998-07-09 | 日本電気株式会社 | 露光用マスク |
JP2870461B2 (ja) * | 1995-12-18 | 1999-03-17 | 日本電気株式会社 | フォトマスクの目合わせマーク及び半導体装置 |
AU3538599A (en) * | 1998-04-28 | 1999-11-16 | Nikon Corporation | Exposure system and method of manufacturing micro device |
US6728008B1 (en) * | 1998-09-04 | 2004-04-27 | Kabushiki Kaisha Toshiba | Method for diagnosing optical devices installed in image reading apparatus and image forming apparatus |
US6269322B1 (en) | 1999-03-11 | 2001-07-31 | Advanced Micro Devices, Inc. | System and method for wafer alignment which mitigates effects of reticle rotation and magnification on overlay |
US6084679A (en) | 1999-04-02 | 2000-07-04 | Advanced Micro Devices, Inc. | Universal alignment marks for semiconductor defect capture and analysis |
WO2001009927A1 (en) | 1999-07-28 | 2001-02-08 | Infineon Technologies North America Corp. | Semiconductor structures and manufacturing methods |
JP2001051402A (ja) * | 1999-08-06 | 2001-02-23 | Hitachi Denshi Ltd | フォトマスクの位置合わせ用バーニアおよびその構成方法 |
US6342735B1 (en) | 1999-09-01 | 2002-01-29 | International Business Machines Corporation | Dual use alignment aid |
TW563178B (en) * | 2001-05-07 | 2003-11-21 | Nikon Corp | Optical properties measurement method, exposure method, and device manufacturing method |
-
2003
- 2003-09-02 US US10/653,309 patent/US7001830B2/en not_active Expired - Fee Related
-
2004
- 2004-08-30 KR KR1020067004386A patent/KR101138449B1/ko not_active IP Right Cessation
- 2004-08-30 CN CNB2004800252149A patent/CN100538532C/zh active Active
- 2004-08-30 EP EP04782631A patent/EP1660948A2/en not_active Withdrawn
- 2004-08-30 WO PCT/US2004/028194 patent/WO2005022269A2/en active Application Filing
- 2004-08-30 JP JP2006525382A patent/JP2007504664A/ja active Pending
- 2004-09-01 TW TW093126314A patent/TWI348728B/zh not_active IP Right Cessation
-
2005
- 2005-03-08 US US11/074,602 patent/US7221060B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TWI348728B (en) | 2011-09-11 |
WO2005022269A3 (en) | 2005-04-21 |
CN1879064A (zh) | 2006-12-13 |
KR20060118428A (ko) | 2006-11-23 |
KR101138449B1 (ko) | 2012-04-26 |
US7001830B2 (en) | 2006-02-21 |
WO2005022269A2 (en) | 2005-03-10 |
US20050048741A1 (en) | 2005-03-03 |
US7221060B1 (en) | 2007-05-22 |
JP2007504664A (ja) | 2007-03-01 |
EP1660948A2 (en) | 2006-05-31 |
TW200518177A (en) | 2005-06-01 |
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C14 | Grant of patent or utility model | ||
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Owner name: GLOBALFOUNDRIES INC. Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC. Effective date: 20100730 |
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Effective date of registration: 20100730 Address after: Grand Cayman, Cayman Islands Patentee after: Globalfoundries Semiconductor Inc. Address before: American California Patentee before: Advanced Micro Devices Inc. |
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TR01 | Transfer of patent right |
Effective date of registration: 20210302 Address after: California, USA Patentee after: Lattice chip (USA) integrated circuit technology Co.,Ltd. Address before: Greater Cayman Islands, British Cayman Islands Patentee before: GLOBALFOUNDRIES Inc. |
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