JP2007503115A5 - - Google Patents

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Publication number
JP2007503115A5
JP2007503115A5 JP2006523855A JP2006523855A JP2007503115A5 JP 2007503115 A5 JP2007503115 A5 JP 2007503115A5 JP 2006523855 A JP2006523855 A JP 2006523855A JP 2006523855 A JP2006523855 A JP 2006523855A JP 2007503115 A5 JP2007503115 A5 JP 2007503115A5
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JP
Japan
Prior art keywords
aqueous composition
hydroxide
ammonium
composition
pyrrolidinone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006523855A
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English (en)
Japanese (ja)
Other versions
JP2007503115A (ja
JP4522408B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2004/024153 external-priority patent/WO2005019939A1/en
Publication of JP2007503115A publication Critical patent/JP2007503115A/ja
Publication of JP2007503115A5 publication Critical patent/JP2007503115A5/ja
Application granted granted Critical
Publication of JP4522408B2 publication Critical patent/JP4522408B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006523855A 2003-08-19 2004-07-26 マイクロエレクトロニクス用のストリッピングおよび洗浄組成物 Expired - Fee Related JP4522408B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US49611003P 2003-08-19 2003-08-19
US54897604P 2004-03-01 2004-03-01
PCT/US2004/024153 WO2005019939A1 (en) 2003-08-19 2004-07-26 Stripping and cleaning compositions for microelectronics

Publications (3)

Publication Number Publication Date
JP2007503115A JP2007503115A (ja) 2007-02-15
JP2007503115A5 true JP2007503115A5 (OSRAM) 2007-09-13
JP4522408B2 JP4522408B2 (ja) 2010-08-11

Family

ID=34221393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006523855A Expired - Fee Related JP4522408B2 (ja) 2003-08-19 2004-07-26 マイクロエレクトロニクス用のストリッピングおよび洗浄組成物

Country Status (16)

Country Link
US (1) US7928046B2 (OSRAM)
EP (1) EP1664935B1 (OSRAM)
JP (1) JP4522408B2 (OSRAM)
KR (1) KR101056544B1 (OSRAM)
CN (1) CN1839355B (OSRAM)
AT (1) ATE376201T1 (OSRAM)
BR (1) BRPI0413657A (OSRAM)
CA (1) CA2536159A1 (OSRAM)
DE (1) DE602004009595T2 (OSRAM)
DK (1) DK1664935T3 (OSRAM)
ES (1) ES2293340T3 (OSRAM)
IL (1) IL173664A (OSRAM)
NO (1) NO20061247L (OSRAM)
PL (1) PL1664935T3 (OSRAM)
PT (1) PT1664935E (OSRAM)
WO (1) WO2005019939A1 (OSRAM)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
DE602004009595T2 (de) * 2003-08-19 2008-07-24 Mallinckrodt Baker, Inc. Ablös- und reinigungszusammensetzungen für die mikroelektronik
US7498295B2 (en) * 2004-02-12 2009-03-03 Air Liquide Electronics U.S. Lp Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide
US7923424B2 (en) * 2005-02-14 2011-04-12 Advanced Process Technologies, Llc Semiconductor cleaning using superacids
US8044009B2 (en) * 2005-04-04 2011-10-25 Avantor Performance Materials, Inc. Compositions for cleaning ion implanted photoresist in front end of line applications
US8772214B2 (en) * 2005-10-14 2014-07-08 Air Products And Chemicals, Inc. Aqueous cleaning composition for removing residues and method using same
US8367312B2 (en) * 2006-01-11 2013-02-05 Tokyo Ohka Kogyo Co., Ltd. Detergent for lithography and method of forming resist pattern with the same
US20080070820A1 (en) * 2006-09-19 2008-03-20 Wescor, Inc. Stain removing cleaning solutions
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
US8026201B2 (en) * 2007-01-03 2011-09-27 Az Electronic Materials Usa Corp. Stripper for coating layer
JP5407121B2 (ja) * 2007-07-24 2014-02-05 ナガセケムテックス株式会社 洗浄剤組成物
JP2010535422A (ja) * 2007-08-02 2010-11-18 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド マイクロ電子デバイスから残渣を除去するための非フッ化物含有組成物
US8153019B2 (en) * 2007-08-06 2012-04-10 Micron Technology, Inc. Methods for substantially equalizing rates at which material is removed over an area of a structure or film that includes recesses or crevices
KR101392629B1 (ko) * 2007-10-11 2014-05-07 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의박리방법
US9691622B2 (en) 2008-09-07 2017-06-27 Lam Research Corporation Pre-fill wafer cleaning formulation
WO2010098899A1 (en) * 2009-02-25 2010-09-02 Mallinckrodt Baker, Inc. Multipurpose acidic, organic solvent based microelectronic cleaning composition
JP5720572B2 (ja) * 2009-10-02 2015-05-20 三菱瓦斯化学株式会社 金属微細構造体のパターン倒壊抑制用処理液及びこれを用いた金属微細構造体の製造方法
WO2011078982A1 (en) * 2009-12-23 2011-06-30 Lam Research Corporation Post deposition wafer cleaning formulation
US8058221B2 (en) * 2010-04-06 2011-11-15 Samsung Electronics Co., Ltd. Composition for removing a photoresist and method of manufacturing semiconductor device using the composition
EP2580303B1 (en) 2010-06-09 2018-08-29 Basf Se Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates
CN102289159A (zh) * 2010-06-18 2011-12-21 拉姆科技有限公司 用于除去光致抗蚀剂的组合物及利用其形成半导体图案的方法
KR20120005374A (ko) * 2010-07-08 2012-01-16 동우 화인켐 주식회사 폴리이미드 제거용 세정제 조성물
TWI548738B (zh) 2010-07-16 2016-09-11 安堤格里斯公司 用於移除蝕刻後殘餘物之水性清潔劑
DE102011050136A1 (de) 2010-09-03 2012-03-08 Schott Solar Ag Verfahren zum nasschemischen Ätzen einer Siliziumschicht
JP5519728B2 (ja) * 2011-05-17 2014-06-11 富士フイルム株式会社 エッチング方法及びこれに用いられるエッチング液、これを用いた半導体素子の製造方法
ES2541222T3 (es) 2011-08-09 2015-07-16 Basf Se Composiciones alcalinas acuosas y procedimiento de tratamiento de la superficie de sustratos de silicio
CN104145324B (zh) 2011-12-28 2017-12-22 恩特格里斯公司 用于选择性蚀刻氮化钛的组合物和方法
CN103076725A (zh) * 2013-01-31 2013-05-01 北京七星华创电子股份有限公司 一种去除光刻胶的溶液及其应用
US20150104952A1 (en) * 2013-10-11 2015-04-16 Ekc Technology, Inc. Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper
US9472420B2 (en) 2013-12-20 2016-10-18 Air Products And Chemicals, Inc. Composition for titanium nitride hard mask and etch residue removal
US11978622B2 (en) * 2014-06-30 2024-05-07 Entegris, Inc. Aqueous and semi-aqueous cleaners for the removal of post-etch residues with tungsten and cobalt compatibility
JP6501492B2 (ja) 2014-10-31 2019-04-17 関東化學株式会社 フォトレジスト残渣および／またはポリマー残渣を除去するための組成物
US9976111B2 (en) 2015-05-01 2018-05-22 Versum Materials Us, Llc TiN hard mask and etch residual removal
KR102545804B1 (ko) 2015-12-04 2023-06-20 솔브레인 주식회사 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법
WO2017169834A1 (ja) * 2016-03-31 2017-10-05 富士フイルム株式会社 半導体製造用処理液、及び、パターン形成方法
CN110023477A (zh) * 2016-11-25 2019-07-16 恩特格里斯公司 用于去除蚀刻后残留物的清洁组合物
US10761423B2 (en) 2017-08-30 2020-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical composition for tri-layer removal
DE102017124654B4 (de) * 2017-08-30 2024-02-22 Taiwan Semiconductor Manufacturing Company, Ltd. Chemische zusammensetzung für dreifachschicht-entfernung und verfahren
US11390829B2 (en) * 2018-01-16 2022-07-19 Tokuyama Corporation Treatment liquid for semiconductor wafers, which contains hypochlorite ions
CN110908254A (zh) * 2019-12-26 2020-03-24 苏州珮凯科技有限公司 8寸晶圆制造光刻机核心零部件cup的固化光阻去除液及其去除固化光阻的方法
KR20220012521A (ko) * 2020-07-23 2022-02-04 주식회사 케이씨텍 세정액 조성물 및 이를 이용한 세정 방법

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2962394A (en) * 1957-06-20 1960-11-29 Motorola Inc Process for plating a silicon base semiconductive unit with nickel
US3415679A (en) * 1965-07-09 1968-12-10 Western Electric Co Metallization of selected regions of surfaces and products so formed
US3476658A (en) * 1965-11-16 1969-11-04 United Aircraft Corp Method of making microcircuit pattern masks
FR1548401A (OSRAM) * 1967-08-16 1968-12-06
US3666529A (en) * 1969-04-02 1972-05-30 Atomic Energy Commission Method of conditioning aluminous surfaces for the reception of electroless nickel plating
US3632436A (en) * 1969-07-11 1972-01-04 Rca Corp Contact system for semiconductor devices
FR2206583B1 (OSRAM) * 1972-11-13 1976-10-29 Radiotechnique Compelec
DD210592A3 (de) * 1981-09-02 1984-06-13 Diana N Kovaldova Loesung zur aktivierung der oberflaeche von dielektrika vor der chemischen metallisierung
US4786429A (en) * 1986-06-20 1988-11-22 Mitsubishi Petrochemical Co., Ltd. Electrolyte for aluminum electrolytic capacitor
US5181988A (en) * 1988-07-08 1993-01-26 Asahi Denka Kogyo Kabushiki Kaisha Method for preventing the discoloration of paper and paper treated to prevent discoloring
SU1706815A1 (ru) * 1989-07-31 1992-01-23 Производственное Объединение "Завод Им.Малышева" Состав дл обработки деталей после пайки
JPH0445280A (ja) * 1990-06-13 1992-02-14 Fuji Kiko Denshi Kk セラミックスの無電解めっきにおける前処理用組成物とセラミックスのめっき方法
US5232744A (en) * 1991-02-21 1993-08-03 C. Uyemura & Co., Ltd. Electroless composite plating bath and method
US5266103A (en) * 1991-07-04 1993-11-30 C. Uyemura & Co., Ltd. Bath and method for the electroless plating of tin and tin-lead alloy
JP2518118B2 (ja) * 1991-08-09 1996-07-24 上村工業株式会社 無電解錫又は錫・鉛合金めっき液及び無電解錫又は錫・鉛合金めっき方法
DE69214618T2 (de) * 1991-12-31 1997-02-20 Stepan Europ Quaternär-Ammonium Tenside, Verfahren zu ihrer Herstellung, Basen und ihre ableitenden Weichmacher
US5259888A (en) * 1992-02-03 1993-11-09 Sachem, Inc. Process for cleaning quartz and silicon surfaces
US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
EP0937483B1 (en) * 1998-02-10 2003-09-24 Miyoshi Yushi Kabushiki Kaisha Treatment method of solid waste
KR100610387B1 (ko) * 1998-05-18 2006-08-09 말린크로트 베이커, 인코포레이티드 초소형 전자 기판 세정용 실리케이트 함유 알칼리성 조성물
JP3973323B2 (ja) * 1998-08-13 2007-09-12 日本ペイント株式会社 硫黄含有化合物とリン含有化合物によるノンクロム処理剤
JP2000208467A (ja) * 1999-01-14 2000-07-28 Mitsubishi Gas Chem Co Inc 半導体基板洗浄液およびそれを用いた半導体基板の洗浄方法
JP4856802B2 (ja) * 1999-03-31 2012-01-18 日本表面化学株式会社 金属表面処理方法
JP2000311879A (ja) * 1999-04-28 2000-11-07 Mitsubishi Electric Corp 洗浄液およびこれを用いた半導体装置の製造方法
JP4224659B2 (ja) * 1999-06-23 2009-02-18 Ｊｓｒ株式会社 半導体部品用洗浄剤
JP4247587B2 (ja) * 1999-06-23 2009-04-02 Ｊｓｒ株式会社 半導体部品用洗浄剤、半導体部品の洗浄方法、研磨用組成物、および研磨方法
JP4134458B2 (ja) * 1999-06-23 2008-08-20 Ｊｓｒ株式会社 半導体部品用洗浄剤、半導体部品の洗浄方法
JP3365980B2 (ja) * 1999-08-03 2003-01-14 花王株式会社 洗浄剤組成物
JP2001107089A (ja) * 1999-10-07 2001-04-17 Jsr Corp 半導体部品用洗浄剤、半導体部品の洗浄方法、研磨用組成物、および研磨方法
JP2001338927A (ja) * 2000-05-29 2001-12-07 Sony Corp 半導体装置の製造方法
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
US6680286B1 (en) * 2000-11-14 2004-01-20 Sanyo Chemical Industries, Ltd. Detergent composition comprising a quaternary ammonium salt of a carboxyl containing polymer
EP1211563B1 (en) * 2000-11-30 2011-12-21 Tosoh Corporation Resist stripper composition
BR0116674A (pt) * 2000-12-15 2003-11-04 Unilever Nv Composição oral para limpeza de dentes, uso de composição oral para limpeza de dentes e embalagem comercial
US6579439B1 (en) * 2001-01-12 2003-06-17 Southern Industrial Chemicals, Inc. Electrolytic aluminum polishing processes
MY139607A (en) * 2001-07-09 2009-10-30 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
JP3516446B2 (ja) * 2002-04-26 2004-04-05 東京応化工業株式会社 ホトレジスト剥離方法
US6800121B2 (en) * 2002-06-18 2004-10-05 Atotech Deutschland Gmbh Electroless nickel plating solutions
SG129274A1 (en) * 2003-02-19 2007-02-26 Mitsubishi Gas Chemical Co Cleaaning solution and cleaning process using the solution
DE602004009595T2 (de) * 2003-08-19 2008-07-24 Mallinckrodt Baker, Inc. Ablös- und reinigungszusammensetzungen für die mikroelektronik
US7671001B2 (en) * 2003-10-29 2010-03-02 Mallinckrodt Baker, Inc. Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors
WO2005083523A1 (en) * 2004-02-11 2005-09-09 Mallinckrodt Baker Inc. Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof
CN1690120A (zh) * 2004-03-01 2005-11-02 三菱瓦斯化学株式会社 具有高减震能力的树脂组合物
JP4440689B2 (ja) * 2004-03-31 2010-03-24 東友ファインケム株式会社 レジスト剥離剤組成物

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