JP2007502025A - シリコン薄膜の焼鈍方法およびそれから調製される多結晶シリコン薄膜 - Google Patents
シリコン薄膜の焼鈍方法およびそれから調製される多結晶シリコン薄膜 Download PDFInfo
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Abstract
【選択図】図6
Description
2cm×2cm×0.7mm(長さ×幅×厚さ)のガラス基板上に、厚さ3000ÅのSiO2絶縁層をPECVDにより形成した。厚さ500Åのa−Si薄膜を、再度、PECVDによって絶縁層の上に形成して、試験片を調製した。上記のように形成されたa−Si薄膜を、管状炉中、窒素雰囲気下に約650℃で約30分間予備加熱した。予備加熱工程の後で、電界を印加する前のa−Si薄膜は、既に固体結晶化を経て、部分的に多結晶相を含んでいた。薄膜の表面抵抗は、約35kΩであった。そのような予備加熱によってシリコン薄膜の抵抗を十分に低下させた後、電流250mAが0.07秒間流れるようにDC電界1,500V/cmを印加し、次いで約2.5秒間隔で電界を再度印加して、シリコン薄膜内に選択的なジュール加熱を引き起こした。このような方法で、電界を約70回印加した。
比較例1は、電界を印加することなく650℃で1時間a−Si薄膜を固体結晶化したことを除いて、実施例1と同じように行った。上記のように得られたポリ−Si薄膜のTEM写真を、図9に示す。図9に示されるように、SPCによって調製された多結晶シリコンは、木の枝の形状である樹枝状の構造を有し、結晶粒中に双晶などの多くの結晶格子欠陥を含むことが認められた。これは、実施例1の多結晶シリコンに対する実質的な相違を示す。
各々先行技術に従うMILCおよびELCによって、実施例1と同じ試験片を用いて結晶化を行った。それぞれの結果を図10および11に示す。図10に示されるように、MILCによって調製された多結晶シリコンは、横方向成長による微細構造を示す。また図11に示されるように、ELCによって調製された多結晶シリコンは、六方形状の微細構造を示す。これは実質的に欠陥がなく、結晶粒のサイズは約2,000〜4,000Åである。しかし、図19のTEM写真に示されるように、ELCによって調製された多結晶シリコンでは、結晶粒が互いに衝突する三重接合点(triple junction)において、表面突起物が認められた。図20は、AFMの結果を示す。ELCによって調製された多結晶シリコンの表面粗さは、約224Åであった。
2cm×1cm×0.7mm(長さ×幅×厚さ)のガラス基板上に、厚さ3000ÅのSiO2絶縁層をPECVDにより形成した。厚さ500Åのa−Si薄膜を、再度、PECVDによって絶縁層の上に形成して、試験片を調製した。上記のように形成されたa−Si薄膜をレーザー結晶化方法によって結晶化し、ポリ−Si薄膜とした。次いで、PH3/H2混合ガスを用いることによるイオンシャワーによって、ポリ−Si薄膜をドーピングする。イオンを注入した試験片の低温ドーパント活性化のため、250℃、約20分間の予備加熱の後、DC電界1,000V/cmを印加する。それを除いて、実験を、実施例1と同じように行った。上記のように処理された試験片のガラス基板は、歪みなしに、その元の平坦性を保持する。電界を印加し、次いでイオンを注入したポリ−Si薄膜の表面抵抗は、1kΩ/sq未満であった。それは、ドーパントの活性化のための熱処理が低温で生じたことを意味する。
20 絶縁層
30 a−Si薄膜
32 シリコン薄膜
40 電極
50 ドープa−Si薄膜
52 シリコン薄膜
60 ポリ−Si薄膜
70 ドープポリ−Si薄膜
72 シリコン薄膜
Claims (14)
- 後に絶縁層およびシリコン薄膜が形成される基板中のシリコン薄膜を焼鈍する方法であって、
基板が処理中に変態しない温度範囲内でシリコン薄膜を加熱または予備加熱して、そこに内因性キャリヤを生成させることにより、抵抗をジュール加熱が可能な値に低下する工程;および
予備加熱されたシリコン薄膜に電界を印加して、ジュール加熱をキャリヤの移動によって引き起こすことにより、結晶化を行い、結晶欠陥を排除し、結晶成長を確実にする工程
を含むことを特徴とするシリコン薄膜の焼鈍方法。 - 前記基板は、ガラス基板またはプラスチック基板であることを特徴とする請求項1に記載のシリコン薄膜の焼鈍方法。
- 前記シリコン薄膜は、予備加熱によって、非晶質状態、非晶質/多結晶混合状態または多結晶状態で存在することを特徴とする請求項1に記載のシリコン薄膜の焼鈍方法。
- 前記基板は、ガラス基板であり、前記予備加熱工程は、200〜800℃で行われることを特徴とする請求項1に記載のシリコン薄膜の焼鈍方法。
- 前記予備加熱工程は、シリコン薄膜の固相結晶化が開始される閾値時間を超えて行われることを特徴とする請求項1に記載のシリコン薄膜の焼鈍方法。
- 焼鈍によって非晶質シリコン薄膜、非晶質/多結晶シリコン薄膜または多結晶シリコン薄膜を結晶化することを特徴とする請求項1に記載のシリコン薄膜の焼鈍方法。
- 焼鈍によってドープ非晶質シリコン薄膜、ドープ非晶質/多結晶シリコン薄膜またはドープ多結晶シリコン薄膜を結晶化し、且つドーパントを活性化することを特徴とする請求項1に記載のシリコン薄膜の焼鈍方法。
- 前記シリコン薄膜の抵抗は、予備加熱によって10MΩ/sq未満に低下されることを特徴とする請求項1に記載のシリコン薄膜の焼鈍方法。
- 前記抵抗は、1MΩ/sq未満に低下されることを特徴とする請求項8に記載のシリコン薄膜の焼鈍方法。
- 前記シリコン薄膜に印加される電界は、強度10V/cm以上を有することを特徴とする請求項1に記載のシリコン薄膜の焼鈍方法。
- 前記電界強度は、10V/cm超であることを特徴とする請求項10に記載のシリコン薄膜の焼鈍方法。
- 前記電界の印加時間は、10−6〜103秒の範囲にあることを特徴とする請求項1に記載のシリコン薄膜の焼鈍方法。
- 電界を印加するとき、シリコン薄膜の上部表面の一部に金属電極を置くことによって、DCまたはAC電界を印加する、シリコン薄膜の上部表面に、金属電極を置くことなしに直接DCまたはAC電界を印加する、またはシリコン薄膜に電界と共に磁界を印加することを特徴とする請求項1に記載のシリコン薄膜の焼鈍方法。
- 請求項1〜13のいずれかに定義される方法によって製造され、大結晶粒サイズを有し、実質的に表面突出部または結晶欠陥を有しないことを特徴とする多結晶シリコン薄膜。
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