JP2007281406A - ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン - Google Patents

ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン Download PDF

Info

Publication number
JP2007281406A
JP2007281406A JP2006165159A JP2006165159A JP2007281406A JP 2007281406 A JP2007281406 A JP 2007281406A JP 2006165159 A JP2006165159 A JP 2006165159A JP 2006165159 A JP2006165159 A JP 2006165159A JP 2007281406 A JP2007281406 A JP 2007281406A
Authority
JP
Japan
Prior art keywords
stretchable
electronic circuit
semiconductor
curved
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006165159A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007281406A5 (enExample
Inventor
John A Rogers
エー． ロジャーズ ジョン
Dahl-Young Khang
カン ダル−ヤン
Yugang Sun
サン ユガン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Illinois at Urbana Champaign
University of Illinois System
Original Assignee
University of Illinois at Urbana Champaign
University of Illinois System
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Illinois at Urbana Champaign, University of Illinois System filed Critical University of Illinois at Urbana Champaign
Publication of JP2007281406A publication Critical patent/JP2007281406A/ja
Publication of JP2007281406A5 publication Critical patent/JP2007281406A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Engineering & Computer Science (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2006165159A 2006-04-07 2006-06-14 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン Pending JP2007281406A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79010406P 2006-04-07 2006-04-07

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013169101A Division JP5851457B2 (ja) 2006-04-07 2013-08-16 伸縮性半導体素子、伸縮性半導体素子を製造する方法、伸縮性電子回路及び伸縮性電子回路を製造する方法

Publications (2)

Publication Number Publication Date
JP2007281406A true JP2007281406A (ja) 2007-10-25
JP2007281406A5 JP2007281406A5 (enExample) 2012-12-06

Family

ID=38682516

Family Applications (6)

Application Number Title Priority Date Filing Date
JP2006165159A Pending JP2007281406A (ja) 2006-04-07 2006-06-14 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
JP2013169101A Active JP5851457B2 (ja) 2006-04-07 2013-08-16 伸縮性半導体素子、伸縮性半導体素子を製造する方法、伸縮性電子回路及び伸縮性電子回路を製造する方法
JP2015040251A Active JP6140207B2 (ja) 2006-04-07 2015-03-02 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
JP2016175541A Active JP6377689B2 (ja) 2006-04-07 2016-09-08 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
JP2016230221A Active JP6574157B2 (ja) 2006-04-07 2016-11-28 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
JP2018130156A Pending JP2019004151A (ja) 2006-04-07 2018-07-09 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン

Family Applications After (5)

Application Number Title Priority Date Filing Date
JP2013169101A Active JP5851457B2 (ja) 2006-04-07 2013-08-16 伸縮性半導体素子、伸縮性半導体素子を製造する方法、伸縮性電子回路及び伸縮性電子回路を製造する方法
JP2015040251A Active JP6140207B2 (ja) 2006-04-07 2015-03-02 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
JP2016175541A Active JP6377689B2 (ja) 2006-04-07 2016-09-08 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
JP2016230221A Active JP6574157B2 (ja) 2006-04-07 2016-11-28 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
JP2018130156A Pending JP2019004151A (ja) 2006-04-07 2018-07-09 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン

Country Status (4)

Country Link
JP (6) JP2007281406A (enExample)
KR (5) KR20070100617A (enExample)
MY (4) MY151572A (enExample)
TW (7) TWI427802B (enExample)

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010517265A (ja) * 2007-01-17 2010-05-20 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ 印刷ベースの組立により製作される光学システム
WO2012091498A1 (ko) * 2010-12-31 2012-07-05 성균관대학교산학협력단 그래핀 전극을 포함하는 플렉시블/스트레처블 반도체 소자, 반도체층과 그래핀 전극 사이의 접촉저항 감소 방법, 및 그래핀 인터커넥터
JP2012515436A (ja) * 2009-01-12 2012-07-05 エムシー１０ インコーポレイテッド 非平面撮像アレイの方法及び応用
US8384080B2 (en) 2009-12-28 2013-02-26 Sony Corporation Thin film transistor, display device, and electronic device
JP2013239716A (ja) * 2006-09-06 2013-11-28 Board Of Trustees Of The Univ Of Illinois ２次元デバイスアレイ
JP2016500922A (ja) * 2012-10-31 2016-01-14 ソイテックＳｏｉｔｅｃ 活性層の初期歪み状態を最終歪み状態へと修正するプロセス
JP2016076484A (ja) * 2014-10-02 2016-05-12 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． ストレッチャブル／フォールダブル光電子素子及びその製造方法、並びに該光電子素子を含む装置
JP2017511969A (ja) * 2014-06-20 2017-04-27 コリア インスティテュート オブ マシーナリィ アンド マテリアルズ 量子ドット薄膜形成方法
JP2017103459A (ja) * 2006-04-07 2017-06-08 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
WO2019074105A1 (ja) 2017-10-12 2019-04-18 大日本印刷株式会社 配線基板及び配線基板の製造方法
WO2019074115A1 (ja) 2017-10-12 2019-04-18 大日本印刷株式会社 配線基板及び配線基板の製造方法
WO2019074111A1 (ja) 2017-10-12 2019-04-18 大日本印刷株式会社 配線基板及び配線基板の製造方法
JP6512389B1 (ja) * 2017-11-07 2019-05-15 大日本印刷株式会社 伸縮性回路基板および物品
US10374072B2 (en) 2004-06-04 2019-08-06 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
WO2020091010A1 (ja) 2018-10-31 2020-05-07 大日本印刷株式会社 配線基板及び配線基板の製造方法
WO2020091012A1 (ja) 2018-10-31 2020-05-07 大日本印刷株式会社 配線基板及び配線基板の製造方法
WO2020100625A1 (ja) 2018-11-16 2020-05-22 大日本印刷株式会社 配線基板及び配線基板の製造方法
JP2020088337A (ja) * 2018-11-30 2020-06-04 大日本印刷株式会社 配線基板及び配線基板の製造方法
CN111554638A (zh) * 2020-04-16 2020-08-18 上海交通大学 用于可拉伸电子装置的基底及其制备方法
WO2020189790A1 (ja) 2019-03-20 2020-09-24 大日本印刷株式会社 配線基板及び配線基板の製造方法
CN111952322A (zh) * 2020-08-14 2020-11-17 电子科技大学 一种具有周期可调屈曲结构的柔性半导体薄膜及制备方法
CN114258185A (zh) * 2020-09-24 2022-03-29 北京梦之墨科技有限公司 一种电子器件及其制备方法
US11395404B2 (en) 2018-11-16 2022-07-19 Dai Nippon Printing Co., Ltd. Wiring board and method for manufacturing the wiring board
WO2025187670A1 (ja) * 2024-03-04 2025-09-12 国立大学法人大阪大学 薄膜デバイスおよび薄膜デバイスの製造方法

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103872002B (zh) 2008-03-05 2017-03-01 伊利诺伊大学评议会 可拉伸和可折叠的电子器件
US8134163B2 (en) * 2008-08-11 2012-03-13 Taiwan Semiconductor Manfacturing Co., Ltd. Light-emitting diodes on concave texture substrate
US8519379B2 (en) * 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
KR101048356B1 (ko) * 2009-06-08 2011-07-14 서울대학교산학협력단 잡아 늘일 수 있는 전자소자들의 금속 연결 구조 및 그 제조방법
US9723122B2 (en) 2009-10-01 2017-08-01 Mc10, Inc. Protective cases with integrated electronics
US8992807B2 (en) 2010-01-14 2015-03-31 Samsung Techwin Co., Ltd. Method of manufacturing deformation-capable graphene sheet, deformation-capable graphene sheet, and device using the same
US9159635B2 (en) 2011-05-27 2015-10-13 Mc10, Inc. Flexible electronic structure
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
TWI524825B (zh) 2012-10-29 2016-03-01 財團法人工業技術研究院 碳材導電膜的轉印方法
KR102229373B1 (ko) * 2013-10-08 2021-03-17 한양대학교 산학협력단 유연소자의 제조방법, 그에 의하여 제조된 유연소자 및 접합소자
KR102255198B1 (ko) * 2014-08-12 2021-05-25 삼성디스플레이 주식회사 스트레처블 기판 및 이를 구비한 유기 발광 표시 장치
JP6369788B2 (ja) 2014-11-27 2018-08-08 パナソニックＩｐマネジメント株式会社 エレクトロニクス用構造体
WO2016084345A1 (en) 2014-11-27 2016-06-02 Panasonic Intellectual Property Management Co., Ltd. Sheet-shaped stretchable structure, and resin composition for stretchable resin sheet and stretchable resin sheet used for the structure
KR101630817B1 (ko) 2014-12-10 2016-06-15 한국과학기술연구원 굴곡진 금속 나노와이어 네트워크, 이를 포함하는 신축성 투명전극 및 이의 제조방법
US10297575B2 (en) * 2016-05-06 2019-05-21 Amkor Technology, Inc. Semiconductor device utilizing an adhesive to attach an upper package to a lower die
KR102250527B1 (ko) * 2016-12-08 2021-05-10 고려대학교 산학협력단 가변 칼라 필터 필름 및 변형률 측정 장치
KR102027115B1 (ko) * 2017-11-28 2019-10-01 고려대학교 세종산학협력단 유기광전소자 및 이의 제조방법
KR102100550B1 (ko) * 2018-01-29 2020-04-13 충북대학교 산학협력단 구리 전극 제작 방법 및 구리 전극 제작 시스템
KR102119009B1 (ko) * 2018-03-08 2020-06-04 포항공과대학교 산학협력단 신축성 기판의 제조방법 및 그를 포함하는 신축성 전자기기의 제조방법
KR102119023B1 (ko) * 2018-04-23 2020-06-04 포항공과대학교 산학협력단 2종 이상의 올리고머를 이용한 신축성 기판의 제조방법 및 그를 포함하는 신축성 전자기기의 제조방법
KR102554461B1 (ko) * 2018-07-26 2023-07-10 엘지디스플레이 주식회사 스트레쳐블 표시 장치
KR102172349B1 (ko) * 2018-09-14 2020-10-30 포항공과대학교 산학협력단 신축성 기판의 제조방법 및 그를 포함하는 신축성 전자기기의 제조방법
US11699677B2 (en) * 2020-06-30 2023-07-11 Openlight Photonics, Inc. Die-to-wafer bonding utilizing micro-transfer printing
CN112366250B (zh) * 2020-11-17 2022-11-15 佛山市国星半导体技术有限公司 一种GaN基紫外探测器及其制作方法
KR102412729B1 (ko) 2021-01-18 2022-06-23 연세대학교 산학협력단 신축성 디스플레이 장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005122285A2 (en) * 2004-06-04 2005-12-22 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482673B2 (en) * 1996-10-17 2002-11-19 Seiko Epson Corporation Semiconductor device, method of making the same, circuit board, flexible substrate, and method of making substrate
US6787052B1 (en) * 2000-06-19 2004-09-07 Vladimir Vaganov Method for fabricating microstructures with deep anisotropic etching of thick silicon wafers
US6566273B2 (en) * 2001-06-27 2003-05-20 Infineon Technologies Ag Etch selectivity inversion for etching along crystallographic directions in silicon
EP1506568B1 (en) * 2002-04-29 2016-06-01 Samsung Electronics Co., Ltd. Direct-connect signaling system
JP2004071874A (ja) * 2002-08-07 2004-03-04 Sharp Corp 半導体装置製造方法および半導体装置
US7491892B2 (en) * 2003-03-28 2009-02-17 Princeton University Stretchable and elastic interconnects
US7704684B2 (en) * 2003-12-01 2010-04-27 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating three-dimensional nanoscale structures
JP5110766B2 (ja) * 2003-12-15 2012-12-26 株式会社半導体エネルギー研究所 薄膜集積回路装置の作製方法及び非接触型薄膜集積回路装置の作製方法
KR101207442B1 (ko) * 2003-12-15 2012-12-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 집적회로장치의 제조방법, 비접촉형 박막 집적회로장치 및 그 제조 방법, 비접촉형 박막 집적회로 장치를 가지는 아이디 태그 및 동전
JP4841807B2 (ja) * 2004-02-27 2011-12-21 株式会社半導体エネルギー研究所 薄膜集積回路及び薄型半導体装置
KR101185613B1 (ko) * 2004-04-27 2012-09-24 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 소프트 리소그래피용 복합 패터닝 장치
TWI427802B (zh) * 2005-06-02 2014-02-21 美國伊利諾大學理事會 可印刷半導體結構及製造和組合之相關方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005122285A2 (en) * 2004-06-04 2005-12-22 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements

Cited By (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11088268B2 (en) 2004-06-04 2021-08-10 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US10374072B2 (en) 2004-06-04 2019-08-06 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US12074213B2 (en) 2004-06-04 2024-08-27 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
JP2017103459A (ja) * 2006-04-07 2017-06-08 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
JP2013239716A (ja) * 2006-09-06 2013-11-28 Board Of Trustees Of The Univ Of Illinois ２次元デバイスアレイ
JP2014132681A (ja) * 2007-01-17 2014-07-17 Board Of Trustees Of The Univ Of Illinois 印刷ベースの組立により製作される光学システム
JP2010517265A (ja) * 2007-01-17 2010-05-20 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ 印刷ベースの組立により製作される光学システム
JP2012515436A (ja) * 2009-01-12 2012-07-05 エムシー１０ インコーポレイテッド 非平面撮像アレイの方法及び応用
US8384080B2 (en) 2009-12-28 2013-02-26 Sony Corporation Thin film transistor, display device, and electronic device
WO2012091498A1 (ko) * 2010-12-31 2012-07-05 성균관대학교산학협력단 그래핀 전극을 포함하는 플렉시블/스트레처블 반도체 소자, 반도체층과 그래핀 전극 사이의 접촉저항 감소 방법, 및 그래핀 인터커넥터
JP2016500922A (ja) * 2012-10-31 2016-01-14 ソイテックＳｏｉｔｅｃ 活性層の初期歪み状態を最終歪み状態へと修正するプロセス
JP2017511969A (ja) * 2014-06-20 2017-04-27 コリア インスティテュート オブ マシーナリィ アンド マテリアルズ 量子ドット薄膜形成方法
JP2016076484A (ja) * 2014-10-02 2016-05-12 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． ストレッチャブル／フォールダブル光電子素子及びその製造方法、並びに該光電子素子を含む装置
US11778737B2 (en) 2017-10-12 2023-10-03 Dai Nippon Printing Co., Ltd. Wiring board and method for manufacturing wiring board
JP7100852B2 (ja) 2017-10-12 2022-07-14 大日本印刷株式会社 配線基板及び配線基板の製造方法
US11109479B2 (en) 2017-10-12 2021-08-31 Dai Nippon Printing Co., Ltd. Wiring board and method for manufacturing wiring board
JP6567795B1 (ja) * 2017-10-12 2019-08-28 大日本印刷株式会社 配線基板及び配線基板の製造方法
JPWO2019074111A1 (ja) * 2017-10-12 2019-11-14 大日本印刷株式会社 配線基板及び配線基板の製造方法
JP2019220711A (ja) * 2017-10-12 2019-12-26 大日本印刷株式会社 配線基板及び配線基板の製造方法
US11612054B2 (en) 2017-10-12 2023-03-21 Dai Nippon Printing Co., Ltd. Wiring board and method for manufacturing wiring board
US11968777B2 (en) 2017-10-12 2024-04-23 Dai Nippon Printing Co., Ltd. Method for manufacturing wiring board with a meandering shape section
WO2019074111A1 (ja) 2017-10-12 2019-04-18 大日本印刷株式会社 配線基板及び配線基板の製造方法
US11284507B2 (en) 2017-10-12 2022-03-22 Dai Nippon Printing Co., Ltd. Wiring board and method for manufacturing wiring board
WO2019074105A1 (ja) 2017-10-12 2019-04-18 大日本印刷株式会社 配線基板及び配線基板の製造方法
WO2019074115A1 (ja) 2017-10-12 2019-04-18 大日本印刷株式会社 配線基板及び配線基板の製造方法
US11172570B2 (en) 2017-11-07 2021-11-09 Dai Nippon Printing Co., Ltd. Stretchable circuit substrate and article
WO2019093069A1 (ja) 2017-11-07 2019-05-16 大日本印刷株式会社 伸縮性回路基板および物品
US10959326B2 (en) 2017-11-07 2021-03-23 Dai Nippon Printing Co., Ltd. Stretchable circuit substrate and article
JP6512389B1 (ja) * 2017-11-07 2019-05-15 大日本印刷株式会社 伸縮性回路基板および物品
WO2020091012A1 (ja) 2018-10-31 2020-05-07 大日本印刷株式会社 配線基板及び配線基板の製造方法
KR20210087479A (ko) 2018-10-31 2021-07-12 다이니폰 인사츠 가부시키가이샤 배선 기판 및 배선 기판의 제조 방법
KR20210087476A (ko) 2018-10-31 2021-07-12 다이니폰 인사츠 가부시키가이샤 배선 기판 및 배선 기판의 제조 방법
US12144108B2 (en) 2018-10-31 2024-11-12 Dai Nippon Printing Co., Ltd. Wiring board and method for manufacturing wiring board
US11744011B2 (en) 2018-10-31 2023-08-29 Dai Nippon Printing Co., Ltd. Wiring board and method for manufacturing wiring board
WO2020091010A1 (ja) 2018-10-31 2020-05-07 大日本印刷株式会社 配線基板及び配線基板の製造方法
KR20210091241A (ko) 2018-11-16 2021-07-21 다이니폰 인사츠 가부시키가이샤 배선 기판 및 배선 기판의 제조 방법
WO2020100625A1 (ja) 2018-11-16 2020-05-22 大日本印刷株式会社 配線基板及び配線基板の製造方法
US11395404B2 (en) 2018-11-16 2022-07-19 Dai Nippon Printing Co., Ltd. Wiring board and method for manufacturing the wiring board
JP2020088337A (ja) * 2018-11-30 2020-06-04 大日本印刷株式会社 配線基板及び配線基板の製造方法
JP7249512B2 (ja) 2018-11-30 2023-03-31 大日本印刷株式会社 配線基板及び配線基板の製造方法
WO2020189790A1 (ja) 2019-03-20 2020-09-24 大日本印刷株式会社 配線基板及び配線基板の製造方法
US11653444B2 (en) 2019-03-20 2023-05-16 Dai Nippon Printing Co., Ltd. Wiring board and method for manufacturing wiring board
JP6826786B1 (ja) * 2019-03-20 2021-02-10 大日本印刷株式会社 配線基板及び配線基板の製造方法
CN111554638B (zh) * 2020-04-16 2023-09-08 上海交通大学 用于可拉伸电子装置的基底及其制备方法
CN111554638A (zh) * 2020-04-16 2020-08-18 上海交通大学 用于可拉伸电子装置的基底及其制备方法
CN111952322B (zh) * 2020-08-14 2022-06-03 电子科技大学 一种具有周期可调屈曲结构的柔性半导体薄膜及制备方法
CN111952322A (zh) * 2020-08-14 2020-11-17 电子科技大学 一种具有周期可调屈曲结构的柔性半导体薄膜及制备方法
CN114258185A (zh) * 2020-09-24 2022-03-29 北京梦之墨科技有限公司 一种电子器件及其制备方法
WO2025187670A1 (ja) * 2024-03-04 2025-09-12 国立大学法人大阪大学 薄膜デバイスおよび薄膜デバイスの製造方法

Also Published As

Publication number Publication date
JP6377689B2 (ja) 2018-08-22
JP5851457B2 (ja) 2016-02-03
JP6140207B2 (ja) 2017-05-31
TWI427802B (zh) 2014-02-21
KR20070100617A (ko) 2007-10-11
TWI533459B (zh) 2016-05-11
TWI466488B (zh) 2014-12-21
TW201428984A (zh) 2014-07-16
JP2017103459A (ja) 2017-06-08
MY152238A (en) 2014-09-15
JP2019004151A (ja) 2019-01-10
JP6574157B2 (ja) 2019-09-11
TW200739681A (en) 2007-10-16
TWI570776B (zh) 2017-02-11
TWI336491B (en) 2011-01-21
JP2014017495A (ja) 2014-01-30
TW201042951A (en) 2010-12-01
TWI489523B (zh) 2015-06-21
JP2017038064A (ja) 2017-02-16
JP2015133510A (ja) 2015-07-23
KR20130133733A (ko) 2013-12-09
KR20170077097A (ko) 2017-07-05
TW201216641A (en) 2012-04-16
MY143492A (en) 2011-05-31
TW200721517A (en) 2007-06-01
KR20150044865A (ko) 2015-04-27
TW201519287A (zh) 2015-05-16
MY163588A (en) 2017-09-29
KR20140107158A (ko) 2014-09-04
TW201717261A (zh) 2017-05-16
MY151572A (en) 2014-06-13

Similar Documents

Publication Publication Date Title
JP6574157B2 (ja) ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
US11456258B2 (en) Stretchable form of single crystal silicon for high performance electronics on rubber substrates
KR101453419B1 (ko) 2차원 인장 가능하고 구부릴 수 있는 장치

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090611

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090611

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101001

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20101001

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111228

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120412

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120424

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120625

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120628

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20121024

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130416

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130816