MY143492A - A stretchable form of single crystal silicon for high performance electronics on rubber substrates - Google Patents

A stretchable form of single crystal silicon for high performance electronics on rubber substrates

Info

Publication number
MY143492A
MY143492A MYPI20062672A MYPI20062672A MY143492A MY 143492 A MY143492 A MY 143492A MY PI20062672 A MYPI20062672 A MY PI20062672A MY PI20062672 A MYPI20062672 A MY PI20062672A MY 143492 A MY143492 A MY 143492A
Authority
MY
Malaysia
Prior art keywords
stretchable
crystal silicon
semiconductors
present
electronic circuits
Prior art date
Application number
MYPI20062672A
Inventor
John A Rogers
Dahl-Young Khang
Yugang Sun
Etienne Menard
Original Assignee
Univ Illinois
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Illinois filed Critical Univ Illinois
Publication of MY143492A publication Critical patent/MY143492A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A SIRETCHABLE FORM OF SIWLE CRYSTAL SILICON FOR HIGH PERFURMANCE ELEMONICS ON RUBBER SUBSTRATES [0149] THE PRESENT INVENTION PROVIDES STRETCHABLE, AND OPTIONALLY PRINTABLE, SEMICONDUCTORS AND ELECTRONIC CIRCUITS CAPABLE OF PROVIDING GOOD PERFORMANCE WHEN STRETCHED, COMPRESSED, FLEXED OR OTHERWISE DEFORMED. STRETCHABLE SEMICONDUCTORS 5 AND ELECTRONIC CIRCUITS OF THE PRESENT INVENTION PREFERRED FOR SOME APPLICATIONS ARE FLEXIBLE, IN ADDITION TO BEING STRETCHABLE, AND THUS ARE CAPABLE OF SIGNIFICANT ELONGATION, FLEXING, BENDING OR OTHER DEFORMATION ALONG ONE OR MORE AXES. FURTHER, STRETCHABLE SEMICONDUCTORS AND ELECTRONIC CIRCUITS OF THE PRESENT INVENTION MAY BE ADAPTED TO A WIDE RANGE OF DEVICE CONFIGURATIONS TO PROVIDE FULLY FLEXIBLE ELECTRONIC 10 AND OPTOELECTRONIC DEVICES. 2COPO-/@ C) @ /O @TO@
MYPI20062672A 2006-04-07 2006-06-08 A stretchable form of single crystal silicon for high performance electronics on rubber substrates MY143492A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79010406P 2006-04-07 2006-04-07

Publications (1)

Publication Number Publication Date
MY143492A true MY143492A (en) 2011-05-31

Family

ID=38682516

Family Applications (4)

Application Number Title Priority Date Filing Date
MYPI20062537 MY151572A (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
MYPI20113695 MY152238A (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
MYPI20094997A MY163588A (en) 2006-04-07 2006-06-08 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
MYPI20062672A MY143492A (en) 2006-04-07 2006-06-08 A stretchable form of single crystal silicon for high performance electronics on rubber substrates

Family Applications Before (3)

Application Number Title Priority Date Filing Date
MYPI20062537 MY151572A (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
MYPI20113695 MY152238A (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
MYPI20094997A MY163588A (en) 2006-04-07 2006-06-08 A stretchable form of single crystal silicon for high performance electronics on rubber substrates

Country Status (4)

Country Link
JP (6) JP2007281406A (en)
KR (5) KR20070100617A (en)
MY (4) MY151572A (en)
TW (7) TWI427802B (en)

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Also Published As

Publication number Publication date
KR20130133733A (en) 2013-12-09
TW201717261A (en) 2017-05-16
KR20170077097A (en) 2017-07-05
JP2015133510A (en) 2015-07-23
TW200739681A (en) 2007-10-16
KR20070100617A (en) 2007-10-11
TWI489523B (en) 2015-06-21
KR20150044865A (en) 2015-04-27
TW201216641A (en) 2012-04-16
MY163588A (en) 2017-09-29
MY151572A (en) 2014-06-13
JP2019004151A (en) 2019-01-10
TWI466488B (en) 2014-12-21
TWI336491B (en) 2011-01-21
JP5851457B2 (en) 2016-02-03
JP2007281406A (en) 2007-10-25
TW201519287A (en) 2015-05-16
KR20140107158A (en) 2014-09-04
JP2017103459A (en) 2017-06-08
TWI533459B (en) 2016-05-11
TW201428984A (en) 2014-07-16
TW200721517A (en) 2007-06-01
JP2014017495A (en) 2014-01-30
JP2017038064A (en) 2017-02-16
TWI427802B (en) 2014-02-21
TW201042951A (en) 2010-12-01
JP6140207B2 (en) 2017-05-31
JP6377689B2 (en) 2018-08-22
JP6574157B2 (en) 2019-09-11
TWI570776B (en) 2017-02-11
MY152238A (en) 2014-09-15

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