MY143492A - A stretchable form of single crystal silicon for high performance electronics on rubber substrates - Google Patents
A stretchable form of single crystal silicon for high performance electronics on rubber substratesInfo
- Publication number
- MY143492A MY143492A MYPI20062672A MYPI20062672A MY143492A MY 143492 A MY143492 A MY 143492A MY PI20062672 A MYPI20062672 A MY PI20062672A MY PI20062672 A MYPI20062672 A MY PI20062672A MY 143492 A MY143492 A MY 143492A
- Authority
- MY
- Malaysia
- Prior art keywords
- stretchable
- crystal silicon
- semiconductors
- present
- electronic circuits
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A SIRETCHABLE FORM OF SIWLE CRYSTAL SILICON FOR HIGH PERFURMANCE ELEMONICS ON RUBBER SUBSTRATES [0149] THE PRESENT INVENTION PROVIDES STRETCHABLE, AND OPTIONALLY PRINTABLE, SEMICONDUCTORS AND ELECTRONIC CIRCUITS CAPABLE OF PROVIDING GOOD PERFORMANCE WHEN STRETCHED, COMPRESSED, FLEXED OR OTHERWISE DEFORMED. STRETCHABLE SEMICONDUCTORS 5 AND ELECTRONIC CIRCUITS OF THE PRESENT INVENTION PREFERRED FOR SOME APPLICATIONS ARE FLEXIBLE, IN ADDITION TO BEING STRETCHABLE, AND THUS ARE CAPABLE OF SIGNIFICANT ELONGATION, FLEXING, BENDING OR OTHER DEFORMATION ALONG ONE OR MORE AXES. FURTHER, STRETCHABLE SEMICONDUCTORS AND ELECTRONIC CIRCUITS OF THE PRESENT INVENTION MAY BE ADAPTED TO A WIDE RANGE OF DEVICE CONFIGURATIONS TO PROVIDE FULLY FLEXIBLE ELECTRONIC 10 AND OPTOELECTRONIC DEVICES. 2COPO-/@ C) @ /O @TO@
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US79010406P | 2006-04-07 | 2006-04-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
MY143492A true MY143492A (en) | 2011-05-31 |
Family
ID=38682516
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI20062537 MY151572A (en) | 2005-06-02 | 2006-06-01 | Printable semiconductor structures and related methods of making and assembling |
MYPI20113695 MY152238A (en) | 2005-06-02 | 2006-06-01 | Printable semiconductor structures and related methods of making and assembling |
MYPI20094997A MY163588A (en) | 2006-04-07 | 2006-06-08 | A stretchable form of single crystal silicon for high performance electronics on rubber substrates |
MYPI20062672A MY143492A (en) | 2006-04-07 | 2006-06-08 | A stretchable form of single crystal silicon for high performance electronics on rubber substrates |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI20062537 MY151572A (en) | 2005-06-02 | 2006-06-01 | Printable semiconductor structures and related methods of making and assembling |
MYPI20113695 MY152238A (en) | 2005-06-02 | 2006-06-01 | Printable semiconductor structures and related methods of making and assembling |
MYPI20094997A MY163588A (en) | 2006-04-07 | 2006-06-08 | A stretchable form of single crystal silicon for high performance electronics on rubber substrates |
Country Status (4)
Country | Link |
---|---|
JP (6) | JP2007281406A (en) |
KR (5) | KR20070100617A (en) |
MY (4) | MY151572A (en) |
TW (7) | TWI427802B (en) |
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TWI427802B (en) * | 2005-06-02 | 2014-02-21 | Univ Illinois | Printable semiconductor structures and related methods of making and assembling |
TWI587527B (en) * | 2006-09-06 | 2017-06-11 | 美國伊利諾大學理事會 | Two-dimensional device array |
WO2008143635A1 (en) * | 2007-01-17 | 2008-11-27 | The Board Of Trustees Of The University Of Illinois | Optical systems fabricated by printing-based assembly |
EP2963675A1 (en) * | 2008-03-05 | 2016-01-06 | The Board of Trustees of The University of Illinois | Stretchable and foldable electronic devices |
US8134163B2 (en) * | 2008-08-11 | 2012-03-13 | Taiwan Semiconductor Manfacturing Co., Ltd. | Light-emitting diodes on concave texture substrate |
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US8886334B2 (en) | 2008-10-07 | 2014-11-11 | Mc10, Inc. | Systems, methods, and devices using stretchable or flexible electronics for medical applications |
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US8992807B2 (en) | 2010-01-14 | 2015-03-31 | Samsung Techwin Co., Ltd. | Method of manufacturing deformation-capable graphene sheet, deformation-capable graphene sheet, and device using the same |
WO2012091498A1 (en) * | 2010-12-31 | 2012-07-05 | 성균관대학교산학협력단 | Flexible/stretchable semiconductor device comprising a graphene electrode, method for reducing contact resistance between a semiconductor layer and a graphene electrode, and graphene interconnector |
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TWI524825B (en) | 2012-10-29 | 2016-03-01 | 財團法人工業技術研究院 | Method of transferring carbon conductive film |
FR2997554B1 (en) * | 2012-10-31 | 2016-04-08 | Soitec Silicon On Insulator | METHOD OF MODIFYING AN INITIAL STRAIN STATUS FROM AN ACTIVE LAYER TO A FINAL STRAIN STATUS |
KR102229373B1 (en) * | 2013-10-08 | 2021-03-17 | 한양대학교 산학협력단 | Method for manufacturing flexible device, flexible device manufactured thereby, and junction device |
KR101447238B1 (en) * | 2014-06-20 | 2014-10-08 | 한국기계연구원 | Ethod for forming quantum dot thin film |
KR102255198B1 (en) * | 2014-08-12 | 2021-05-25 | 삼성디스플레이 주식회사 | Stretchable substrate and organic light emitting display comprising the same |
KR102416112B1 (en) * | 2014-10-02 | 2022-07-04 | 삼성전자주식회사 | Stretchable/foldable optoelectronic device, method of manufacturing the same and apparatus including the optoelectronic device |
WO2016084345A1 (en) | 2014-11-27 | 2016-06-02 | Panasonic Intellectual Property Management Co., Ltd. | Sheet-shaped stretchable structure, and resin composition for stretchable resin sheet and stretchable resin sheet used for the structure |
JP6369788B2 (en) | 2014-11-27 | 2018-08-08 | パナソニックIpマネジメント株式会社 | Electronics structure |
KR101630817B1 (en) | 2014-12-10 | 2016-06-15 | 한국과학기술연구원 | Wavy metal nanowire network, flexible transparent electrode comprising the same, and the preparation method thereof |
US10297575B2 (en) * | 2016-05-06 | 2019-05-21 | Amkor Technology, Inc. | Semiconductor device utilizing an adhesive to attach an upper package to a lower die |
KR102250527B1 (en) * | 2016-12-08 | 2021-05-10 | 고려대학교 산학협력단 | Variable Color Filter Film And Strain Measuring Apparatus |
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JP6567795B1 (en) * | 2017-10-12 | 2019-08-28 | 大日本印刷株式会社 | Wiring board and method of manufacturing wiring board |
WO2019074115A1 (en) | 2017-10-12 | 2019-04-18 | 大日本印刷株式会社 | Wiring board and method for producing wiring board |
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KR102027115B1 (en) * | 2017-11-28 | 2019-10-01 | 고려대학교 세종산학협력단 | Organic photoelectric device and manufacturing method thereof |
KR102100550B1 (en) * | 2018-01-29 | 2020-04-13 | 충북대학교 산학협력단 | Method and system for manufacturing copper electrode |
KR102119009B1 (en) * | 2018-03-08 | 2020-06-04 | 포항공과대학교 산학협력단 | Method of preparing the stretchable substrate and method of preparing the flexible electronic device comprising the same |
KR102119023B1 (en) * | 2018-04-23 | 2020-06-04 | 포항공과대학교 산학협력단 | Method of preparing the stretchable substrate using 2 or more species oligomer, and method of preparing the flexible electronic device comprising the same |
KR102554461B1 (en) * | 2018-07-26 | 2023-07-10 | 엘지디스플레이 주식회사 | Stretchable display device |
KR102172349B1 (en) * | 2018-09-14 | 2020-10-30 | 포항공과대학교 산학협력단 | Method of manufacturing stretchable substrate, and method of fabricating stretchable electronic device comprising the same |
EP3876682A4 (en) | 2018-10-31 | 2022-12-07 | Dai Nippon Printing Co., Ltd. | Wiring board and method for manufacturing wiring board |
JP6729840B1 (en) | 2018-10-31 | 2020-07-22 | 大日本印刷株式会社 | Wiring board and method for manufacturing wiring board |
EP3883352A4 (en) | 2018-11-16 | 2022-08-31 | Dai Nippon Printing Co., Ltd. | Wiring substrate, and method for manufacturing wiring substrate |
JP6696634B1 (en) | 2018-11-16 | 2020-05-20 | 大日本印刷株式会社 | Wiring board and method for manufacturing wiring board |
JP7249512B2 (en) * | 2018-11-30 | 2023-03-31 | 大日本印刷株式会社 | Wiring board and method for manufacturing wiring board |
JP6826786B1 (en) * | 2019-03-20 | 2021-02-10 | 大日本印刷株式会社 | Wiring board and manufacturing method of wiring board |
CN111554638B (en) * | 2020-04-16 | 2023-09-08 | 上海交通大学 | Substrate for stretchable electronic device and method of making the same |
US11699677B2 (en) * | 2020-06-30 | 2023-07-11 | Openlight Photonics, Inc. | Die-to-wafer bonding utilizing micro-transfer printing |
CN111952322B (en) * | 2020-08-14 | 2022-06-03 | 电子科技大学 | Flexible semiconductor film with periodically adjustable buckling structure and preparation method thereof |
CN112366250B (en) * | 2020-11-17 | 2022-11-15 | 佛山市国星半导体技术有限公司 | GaN-based ultraviolet detector and manufacturing method thereof |
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KR100616479B1 (en) * | 1996-10-17 | 2006-08-28 | 세이코 엡슨 가부시키가이샤 | Semiconductor device, method for manufacturing the same, circuit board, and flexible substrate |
US6787052B1 (en) * | 2000-06-19 | 2004-09-07 | Vladimir Vaganov | Method for fabricating microstructures with deep anisotropic etching of thick silicon wafers |
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US7491892B2 (en) * | 2003-03-28 | 2009-02-17 | Princeton University | Stretchable and elastic interconnects |
JP2007523468A (en) * | 2003-12-01 | 2007-08-16 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | Method and apparatus for forming a three-dimensional nanoscale structure |
US7566640B2 (en) * | 2003-12-15 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device |
JP5110766B2 (en) * | 2003-12-15 | 2012-12-26 | 株式会社半導体エネルギー研究所 | Method for manufacturing thin film integrated circuit device and method for manufacturing non-contact type thin film integrated circuit device |
JP4841807B2 (en) * | 2004-02-27 | 2011-12-21 | 株式会社半導体エネルギー研究所 | Thin film integrated circuit and thin semiconductor device |
EP1742893B1 (en) * | 2004-04-27 | 2012-10-10 | The Board Of Trustees Of The University Of Illinois | Composite patterning devices for soft lithography |
CN103633099B (en) * | 2004-06-04 | 2016-09-28 | 伊利诺伊大学评议会 | Stretchable semiconductor element, stretchable circuit and manufacture method thereof |
TWI427802B (en) * | 2005-06-02 | 2014-02-21 | Univ Illinois | Printable semiconductor structures and related methods of making and assembling |
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2006
- 2006-06-01 TW TW095119520A patent/TWI427802B/en active
- 2006-06-01 MY MYPI20062537 patent/MY151572A/en unknown
- 2006-06-01 MY MYPI20113695 patent/MY152238A/en unknown
- 2006-06-01 TW TW102142517A patent/TWI533459B/en active
- 2006-06-08 MY MYPI20094997A patent/MY163588A/en unknown
- 2006-06-08 MY MYPI20062672A patent/MY143492A/en unknown
- 2006-06-14 TW TW099127004A patent/TWI489523B/en active
- 2006-06-14 TW TW104103340A patent/TWI570776B/en active
- 2006-06-14 TW TW100139527A patent/TWI466488B/en active
- 2006-06-14 TW TW095121212A patent/TWI336491B/en active
- 2006-06-14 JP JP2006165159A patent/JP2007281406A/en active Pending
- 2006-06-14 KR KR1020060053675A patent/KR20070100617A/en not_active Application Discontinuation
- 2006-06-14 TW TW105135576A patent/TW201717261A/en unknown
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2013
- 2013-08-16 JP JP2013169101A patent/JP5851457B2/en active Active
- 2013-10-31 KR KR1020130131753A patent/KR20130133733A/en active Search and Examination
-
2014
- 2014-07-29 KR KR1020140096828A patent/KR20140107158A/en not_active Application Discontinuation
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2015
- 2015-03-02 JP JP2015040251A patent/JP6140207B2/en active Active
- 2015-03-24 KR KR20150040631A patent/KR20150044865A/en active Search and Examination
-
2016
- 2016-09-08 JP JP2016175541A patent/JP6377689B2/en active Active
- 2016-11-28 JP JP2016230221A patent/JP6574157B2/en active Active
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2017
- 2017-06-26 KR KR1020170080342A patent/KR20170077097A/en not_active Application Discontinuation
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2018
- 2018-07-09 JP JP2018130156A patent/JP2019004151A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20130133733A (en) | 2013-12-09 |
TW201717261A (en) | 2017-05-16 |
KR20170077097A (en) | 2017-07-05 |
JP2015133510A (en) | 2015-07-23 |
TW200739681A (en) | 2007-10-16 |
KR20070100617A (en) | 2007-10-11 |
TWI489523B (en) | 2015-06-21 |
KR20150044865A (en) | 2015-04-27 |
TW201216641A (en) | 2012-04-16 |
MY163588A (en) | 2017-09-29 |
MY151572A (en) | 2014-06-13 |
JP2019004151A (en) | 2019-01-10 |
TWI466488B (en) | 2014-12-21 |
TWI336491B (en) | 2011-01-21 |
JP5851457B2 (en) | 2016-02-03 |
JP2007281406A (en) | 2007-10-25 |
TW201519287A (en) | 2015-05-16 |
KR20140107158A (en) | 2014-09-04 |
JP2017103459A (en) | 2017-06-08 |
TWI533459B (en) | 2016-05-11 |
TW201428984A (en) | 2014-07-16 |
TW200721517A (en) | 2007-06-01 |
JP2014017495A (en) | 2014-01-30 |
JP2017038064A (en) | 2017-02-16 |
TWI427802B (en) | 2014-02-21 |
TW201042951A (en) | 2010-12-01 |
JP6140207B2 (en) | 2017-05-31 |
JP6377689B2 (en) | 2018-08-22 |
JP6574157B2 (en) | 2019-09-11 |
TWI570776B (en) | 2017-02-11 |
MY152238A (en) | 2014-09-15 |
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