TWI533459B - Printable semiconductor structures and related methods of making and assembling - Google Patents

Printable semiconductor structures and related methods of making and assembling

Info

Publication number
TWI533459B
TWI533459B TW102142517A TW102142517A TWI533459B TW I533459 B TWI533459 B TW I533459B TW 102142517 A TW102142517 A TW 102142517A TW 102142517 A TW102142517 A TW 102142517A TW I533459 B TWI533459 B TW I533459B
Authority
TW
Taiwan
Prior art keywords
assembling
making
related methods
semiconductor structures
printable semiconductor
Prior art date
Application number
TW102142517A
Other versions
TW201428984A (en
Inventor
Ralph G Nuzzo
John A Rogers
Etienne Menard
Keon Jae Lee
Dahl-Young Khang
Yugang Sun
Matthew Meitl
Zhengtao Zhu
Heung Cho Ko
Shawn Mack
Original Assignee
Univ Illinois
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to PCT/US2005/019354 priority Critical patent/WO2005122285A2/en
Priority to US11/145,542 priority patent/US7557367B2/en
Priority to US11/145,574 priority patent/US7622367B1/en
Priority to US79010406P priority
Application filed by Univ Illinois filed Critical Univ Illinois
Publication of TW201428984A publication Critical patent/TW201428984A/en
Application granted granted Critical
Publication of TWI533459B publication Critical patent/TWI533459B/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1606Graphene
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/778Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7781Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01049Indium [In]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01051Antimony [Sb]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
TW102142517A 2004-06-04 2006-06-01 Printable semiconductor structures and related methods of making and assembling TWI533459B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/US2005/019354 WO2005122285A2 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
US11/145,542 US7557367B2 (en) 2004-06-04 2005-06-02 Stretchable semiconductor elements and stretchable electrical circuits
US11/145,574 US7622367B1 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
US79010406P true 2006-04-07 2006-04-07

Publications (2)

Publication Number Publication Date
TW201428984A TW201428984A (en) 2014-07-16
TWI533459B true TWI533459B (en) 2016-05-11

Family

ID=38682516

Family Applications (7)

Application Number Title Priority Date Filing Date
TW95119520A TWI427802B (en) 2004-06-04 2006-06-01 Printable semiconductor structures and related methods of making and assembling
TW102142517A TWI533459B (en) 2004-06-04 2006-06-01 Printable semiconductor structures and related methods of making and assembling
TW099127004A TWI489523B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW104103340A TWI570776B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW105135576A TW201717261A (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW100139527A TWI466488B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW95121212A TWI336491B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW95119520A TWI427802B (en) 2004-06-04 2006-06-01 Printable semiconductor structures and related methods of making and assembling

Family Applications After (5)

Application Number Title Priority Date Filing Date
TW099127004A TWI489523B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW104103340A TWI570776B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW105135576A TW201717261A (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW100139527A TWI466488B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW95121212A TWI336491B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates

Country Status (4)

Country Link
JP (6) JP2007281406A (en)
KR (5) KR20070100617A (en)
MY (4) MY152238A (en)
TW (7) TWI427802B (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI427802B (en) * 2005-06-02 2014-02-21 Univ Illinois Printable semiconductor structures and related methods of making and assembling
WO2008030960A2 (en) * 2006-09-06 2008-03-13 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
KR101610885B1 (en) * 2007-01-17 2016-04-08 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 Optical systems fabricated by printing-based assembly
WO2009111641A1 (en) 2008-03-05 2009-09-11 The Board Of Trustees Of The University Of Illinois Stretchable and foldable electronic devices
US8134163B2 (en) * 2008-08-11 2012-03-13 Taiwan Semiconductor Manfacturing Co., Ltd. Light-emitting diodes on concave texture substrate
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
JP2012515436A (en) * 2009-01-12 2012-07-05 エムシー10 インコーポレイテッドMc10,Inc. Methods and applications of non-planar imaging array
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
KR101048356B1 (en) * 2009-06-08 2011-07-14 서울대학교산학협력단 Metal connection of electronic devices tensile structure and a method of manufacturing the same
WO2011041727A1 (en) 2009-10-01 2011-04-07 Mc10, Inc. Protective cases with integrated electronics
US8519379B2 (en) * 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
JP2011138934A (en) 2009-12-28 2011-07-14 Sony Corp Thin film transistor, display device, and electronic equipment
US8992807B2 (en) 2010-01-14 2015-03-31 Samsung Techwin Co., Ltd. Method of manufacturing deformation-capable graphene sheet, deformation-capable graphene sheet, and device using the same
WO2012091498A1 (en) * 2010-12-31 2012-07-05 성균관대학교산학협력단 Flexible/stretchable semiconductor device comprising a graphene electrode, method for reducing contact resistance between a semiconductor layer and a graphene electrode, and graphene interconnector
JP2014523633A (en) 2011-05-27 2014-09-11 エムシー10 インコーポレイテッドMc10,Inc. Electronic, optical, and / or mechanical devices and systems and methods for producing these devices and systems
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
TWI524825B (en) 2012-10-29 2016-03-01 Ind Tech Res Inst Method of transferring carbon conductive film
FR2997554B1 (en) * 2012-10-31 2016-04-08 Soitec Silicon On Insulator Method for modifying an initial stress state of an active layer to a final stress state
KR101447238B1 (en) * 2014-06-20 2014-10-08 한국기계연구원 Ethod for forming quantum dot thin film
JP6369788B2 (en) 2014-11-27 2018-08-08 パナソニックIpマネジメント株式会社 Electronics for structure
JP2017537467A (en) 2014-11-27 2017-12-14 パナソニックIpマネジメント株式会社 Sheet-like elastic structure and elastic resin sheet for a resin composition used therefor, stretchable resin sheet
KR101630817B1 (en) 2014-12-10 2016-06-15 한국과학기술연구원 Wavy metal nanowire network, flexible transparent electrode comprising the same, and the preparation method thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100616479B1 (en) * 1996-10-17 2006-08-28 세이코 엡슨 가부시키가이샤 Semiconductor device, method for manufacturing the same, circuit board, and flexible substrate
US6787052B1 (en) * 2000-06-19 2004-09-07 Vladimir Vaganov Method for fabricating microstructures with deep anisotropic etching of thick silicon wafers
US6566273B2 (en) * 2001-06-27 2003-05-20 Infineon Technologies Ag Etch selectivity inversion for etching along crystallographic directions in silicon
AU2003223783A1 (en) * 2002-04-29 2003-11-17 Silicon Pipe, Inc. Direct-connect signaling system
JP2004071874A (en) * 2002-08-07 2004-03-04 Sharp Corp Semiconductor device manufacturing method and semiconductor device
US7491892B2 (en) * 2003-03-28 2009-02-17 Princeton University Stretchable and elastic interconnects
KR100845565B1 (en) * 2003-12-01 2008-07-10 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 Methods and devices for fabricating three-dimensional nanoscale structures
JP5110766B2 (en) * 2003-12-15 2012-12-26 株式会社半導体エネルギー研究所 The method for manufacturing a manufacturing method and a non-contact type thin film integrated circuit device of the thin film integrated circuit device
US7566640B2 (en) * 2003-12-15 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device
JP4841807B2 (en) * 2004-02-27 2011-12-21 株式会社半導体エネルギー研究所 Thin film integrated circuit and a thin semiconductor device
JP2008507114A (en) * 2004-04-27 2008-03-06 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ Soft composite patterning device for a lithographic
KR101504579B1 (en) * 2004-06-04 2015-03-23 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 Methods and devices for fabricating and assembling printable semiconductor elements
TWI427802B (en) * 2005-06-02 2014-02-21 Univ Illinois Printable semiconductor structures and related methods of making and assembling

Also Published As

Publication number Publication date
JP2015133510A (en) 2015-07-23
KR20170077097A (en) 2017-07-05
TWI489523B (en) 2015-06-21
TW200739681A (en) 2007-10-16
JP2017038064A (en) 2017-02-16
JP2007281406A (en) 2007-10-25
TWI336491B (en) 2011-01-21
TW200721517A (en) 2007-06-01
MY152238A (en) 2014-09-15
TW201428984A (en) 2014-07-16
TW201717261A (en) 2017-05-16
MY151572A (en) 2014-06-13
KR20070100617A (en) 2007-10-11
JP2019004151A (en) 2019-01-10
JP6377689B2 (en) 2018-08-22
TWI427802B (en) 2014-02-21
JP6140207B2 (en) 2017-05-31
MY143492A (en) 2011-05-31
TW201519287A (en) 2015-05-16
JP2017103459A (en) 2017-06-08
TWI466488B (en) 2014-12-21
TW201216641A (en) 2012-04-16
JP5851457B2 (en) 2016-02-03
MY163588A (en) 2017-09-29
JP2014017495A (en) 2014-01-30
KR20130133733A (en) 2013-12-09
KR20140107158A (en) 2014-09-04
TW201042951A (en) 2010-12-01
KR20150044865A (en) 2015-04-27
TWI570776B (en) 2017-02-11

Similar Documents

Publication Publication Date Title
TWI395295B (en) Integrated circuit and method for its manufacture
TWI334663B (en) Magnetoresistive element and method of manufacturing the same
TWI448253B (en) Method of manufacturing fluid-filled element
TWI398903B (en) Circuit structure and fabrication method thereof
IL184659D0 (en) Antibody variants and uses thereof
ZA200709043B (en) Benzodioxane and benzodioxalane derivatives and uses thereof
IL185280D0 (en) Tetrahydroindolone and tetrahydroindazolone derivatives
EP1802588A4 (en) Substituted amino-pyrimidones and uses thereof
TWI389252B (en) Interconnect structure and method of fabrication of same
TWI300258B (en) Methods of forming devices associated with semiconductor constructions
TWI295550B (en) Structure of circuit board and method for fabricating the same
GB0718972D0 (en) Compounds and methods of making the compounds
TWM256895U (en) Improved structure of padlock
ZA200709626B (en) Multicyclic compounds and methods of their use
EP1883389A4 (en) Low-irritation compositions and methods of making the same
ZA200802828B (en) Microcapsule and method of producing same
EP1857427A4 (en) Honeycomb structure and method of manufacturing the same
TWI424840B (en) Use of β-hydroxy-β-methylbutyrate
TWI392082B (en) Efuse and methods of manufacturing the same
HK1211742A1 (en) Methods and devices for fabricating and assembling printable semiconductor elements
EP1895838A4 (en) Compositions and methods
EP1963531A4 (en) Nanoreporters and methods of manufacturing and use thereof
IL177131D0 (en) Simulation of invasive procedures
EP1856085A4 (en) Flavonoid compounds and uses thereof
EP1889195A4 (en) Manufacturing aware design and design aware manufacturing